搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

基于二次谐波产生光谱与显微成像的CdS纳米线空间取向研究

任立庆 杨强 姬超燃 池娇 胡云 魏迎春 许金友

任立庆, 杨强, 姬超燃, 池娇, 胡云, 魏迎春, 许金友. 基于二次谐波产生光谱与显微成像的CdS纳米线空间取向研究. 物理学报, 2024, 73(16): 164207. doi: 10.7498/aps.73.20240753
引用本文: 任立庆, 杨强, 姬超燃, 池娇, 胡云, 魏迎春, 许金友. 基于二次谐波产生光谱与显微成像的CdS纳米线空间取向研究. 物理学报, 2024, 73(16): 164207. doi: 10.7498/aps.73.20240753
Ren Li-Qing, Yang Qiang, Ji Chao-Ran, Chi Jiao, Hu Yun, Wei Ying-Chun, Xu Jin-You. Spatial orientation of CdS nanowires based on second harmonic generation spectroscopy and microscopic imaging. Acta Phys. Sin., 2024, 73(16): 164207. doi: 10.7498/aps.73.20240753
Citation: Ren Li-Qing, Yang Qiang, Ji Chao-Ran, Chi Jiao, Hu Yun, Wei Ying-Chun, Xu Jin-You. Spatial orientation of CdS nanowires based on second harmonic generation spectroscopy and microscopic imaging. Acta Phys. Sin., 2024, 73(16): 164207. doi: 10.7498/aps.73.20240753

基于二次谐波产生光谱与显微成像的CdS纳米线空间取向研究

任立庆, 杨强, 姬超燃, 池娇, 胡云, 魏迎春, 许金友

Spatial orientation of CdS nanowires based on second harmonic generation spectroscopy and microscopic imaging

Ren Li-Qing, Yang Qiang, Ji Chao-Ran, Chi Jiao, Hu Yun, Wei Ying-Chun, Xu Jin-You
PDF
HTML
导出引用
  • 作为一种非线性光学效应, 二次谐波产生(second harmonic generation, SHG)因其良好的偏振敏感性在获得物质成分、结构、特性等信息方面具有广泛应用. 尽管前人利用SHG光谱或SHG显微成像方法探索研究了纳米线的精密定位或追踪问题, 但是结合使用SHG光谱与SHG显微成像方法实现纳米材料结构与晶轴空间取向方面的研究鲜见报道. 本研究分别使用SHG光谱与SHG显微成像方法研究了CdS纳米线空间取向问题. 首先, 基于全光学分析方法从实验上和理论上研究了硫化镉(CdS)纳米线SHG光谱强度随入射光偏振方向变化的规律, 并详细分析了晶轴方位角γ, ω, φ 对CdS纳米线SHG花型图的影响. 其次, 通过理论计算与实验测量结果相互验证, 成功确定了单根CdS纳米线的3个晶轴取向. 最后, 利用偏振相关的SHG显微成像方法研究了单根CdS纳米线的空间取向, 发现单根CdS纳米线不同部位具有不同的SHG响应. 研究结果为SHG光谱与显微成像在纳米材料空间高精度定位研究提供了新的思路与重要参考, 并为纳米材料在生物医学方面的潜在应用提供了重要启示.
    The second harmonic generation (SHG), as a nonlinear optical effect, has a wide range of applications in obtaining information such as material composition, structure, and properties due to its good polarization sensitivity. Although SHG spectroscopy or SHG microscopy has been used to explore the precise positioning or tracking of nanowires, there are few reports on the combination of SHG spectroscopy and SHG microscopy to study the structure of nanomaterials and the spatial orientation of crystal axes. In this work, we investigate the spatial orientation and crystal axis orientation of cadmium sulfide (CdS) nanowires by combining SHG spectroscopy and microscopic imaging. Firstly, we experimentally and theoretically study the spectral intensity of the SHG of CdS nanowires with the polarization direction of the incident light based on the all-optical analysis method proposed by the predecessors. We also analyze the influence of the azimuth angle of the crystal axis γ, ω and φ on the pattern of the SHG of CdS nanowires in detail. Secondly, through the mutual verification of theoretical calculations and experimental measurement results, we successfully determine the three axial orientations of a single CdS nanowire. Finally, we also investigate the spatial orientation of a single CdS nanowire by using the polarization-dependent SHG microscopic imaging method. It is shown that different parts of the CdS nanowire have different SHG responses when the polarization is changed. These results provide a new idea and an important reference for studying the application of SHG spectroscopy and microscopic imaging in the research of high-precision spatial positioning of nanomaterials. This study provides important enlightenment for realizing the potential applications of nanomaterials in biomedicine.
      PACS:
      42.65.-k(Nonlinear optics)
      78.20.-e(Optical properties of bulk materials and thin films)
      42.25.Ja(Polarization)
      42.65.Re(Ultrafast processes; optical pulse generation and pulse compression)
      通信作者: 任立庆, liqing_ren@yulinu.edu.cn ; 许金友, jinyou.xu@m.scnu.edu.cn
    • 基金项目: 国家自然科学基金(批准号: 12064046)、陕西省科技资源共享平台项目(批准号: 2023-CX-PT-16)和陕西省青年创新团队项目(批准号: 23JP202)资助的课题.
      Corresponding author: Ren Li-Qing, liqing_ren@yulinu.edu.cn ; Xu Jin-You, jinyou.xu@m.scnu.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12064046), the Science and Technology Resources Sharing Platform Project of Shaanxi Province, China (Grant No. 2023-CX-PT-16), and the Youth Innovation Team Project of Shaanxi Province, China (Grant No. 23JP202).

    非线性光学作为近代光学的分支之一, 被广泛应用于获得物质成分、结构、特性等信息方面[1]. 硫化镉(CdS)是非常重要且用途广泛的半导体化合物, 光学性能优异, 在非线性光学、光催化和激光应用中具有极其广泛的研究和应用价值. 具体而言, CdS属于n型半导体, 室温禁带宽度为2.45 eV, 有闪锌矿和纤锌矿两种晶体结构, 分别对应立方和六方结构. CdS相对介电常数为11.6, 具有较好的化学性质和热稳定性以及良好的压电特性, 在非线性光学、传感器、光探测器、光波导、激光器等器件中具有良好的应用前景[28]. 同时, CdS纳米材料的非线性极化率强, 具有明显的非线性光学效应[9,10].

    纳米线因其从电子学到生物学的各种有前景的应用而受到广泛关注[1114]. Nadia和 Nada[15]利用飞秒激光对CdS纳米线进行了激发, 发现CdS纳米线具有较高的二次谐波产生(second harmonic generation, SHG)特性. Allen 等[12]对单根硫化锌纳米线SHG光谱的偏振特性作了详细研究, 探索出了一种精密确定硫化锌纳米线3个晶轴方向的全光学方法[16]. Bautista 等[17]采用聚焦矢量光束激发的SHG显微成像方法研究了单根GaAs纳米线的光学特性与结构特征. 研究人员认为, SHG显微成像在闪锌矿结构和偶极非线性特征研究方面具有很大优势. 对于生物应用, Kim 等[18]展示了纳米线与哺乳动物细胞的接口, 无需任何外力. 纳米线空间取向的精密定位对于准确理解纳米材料和生物细胞之间相互作用具有重要的科学意义[19]. 然而, 同时采用SHG光谱与SHG显微成像的纳米材料结构与晶轴的空间取向方面的研究鲜见报道.

    本文结合采用SHG光谱与SHG显微成像的方法研究CdS纳米线的空间取向及其SHG偏振响应特性. 基于SHG光谱研究了不同单根CdS纳米线SHG偏振特性, 详细研究了单根CdS纳米线SHG强度随入射光偏振方向的变化关系, 并运用非线性光学中的二阶极化理论拟合实验测量结果, 从而唯一地确定了单根CdS纳米线的晶轴方向. 结合理论模拟与实验测量研究, 旨在验证SHG光谱方法在测定CdS等纳米线晶体3个晶轴取向的可靠性与适用性. 进一步地, 本文利用SHG显微成像方法研究CdS纳米线空间取向问题, 为该领域纳米线的空间定位研究提供了重要参考和新的思路.

    实验中具体的制备合成CdS纳米线过程[20,21]: 1)将高纯度的CdS粉末置于石英片上, 并将石英片置于加热炉中的石英管中; 2)将涂有Au的石英基片放在粉末的下游位置, Au起催化作用; 3)密封石英管防止漏气, 运行机械真空泵将压强抽至10–3 Pa以下, 然后用N2冲洗石英管约1 h; 4)加热原料粉末至预设温度, 并保持温度, 以恒定压力匀速通入N2 , 整个加热过程约1 h; 5)结束加热, 取出样品, 待自然冷却至室温, 即可获得纳米线的扫描电子显微镜(SEM)照片, 如图1(a)所示.

    图 1 单根CdS纳米线的SHG实验装置与测量结果研究 (a) 化学气相沉积法生长的单根CdS纳米线SEM图; (b) SHG光谱与显微成像装置及CdS纳米线的SHG显微成像图; (c) 归一化处理的激光光谱(红色虚线)与SHG光谱(蓝色实线); (d) SHG信号强度和激发光强度平方之间的关系图; 测量误差也显示在图中; (e) 实验室框架的几何形状(XYZ), 线偏振泵浦激光沿Z轴传输. 泵浦激光的光电场Ei在XY平面内, 与纳米线生长轴成可变角度θ; (f) 晶体框架(xcyczc)在实验室框架中的相对位置; φ是zc和Z轴之间的夹角, γ是X轴和zc在xy平面上的投影($ c' $)之间的夹角, ω是xc和XY平面和xcyc平面的交线之间的夹角, 晶体zc的取向与CdS纳米线的c轴一致, c轴由φ和γ角定义\r\nFig. 1. Experimental setup and measurement of single CdS nanowire: (a) SEM image of the single CdS nanowire prepared via chemical vapor deposition growth; (b) SHG spectroscopic and microscopic imaging device and the SHG image of CdS nanowire; (c) normalized laser spectra (red dotted lines) versus SHG spectra (blue solid lines); (d) the relationship between SHG signal intensity and excitation intensity, error bar is also shown; (e) geometry of the laboratory frame (XYZ), the linearly polarized pumped laser propagates along the z axis, the opto-electric field Ei of the pumped laser in the XY plane has a variable angle θ with the growth axis of the nanowire; (f) the relative position of the crystal frame (xcyczc) in the laboratory frame, Φ is the angle between the zc and z axes, γ is the angle between the X axis and the projection of zc on the XY plane, ω is the angle between the intersection of the xc and XY planes and the xcyc planes, the orientation of zc is consistent with the C axis of CdS nanowires, which is defined by φ and γ angles.
    图 1  单根CdS纳米线的SHG实验装置与测量结果研究 (a) 化学气相沉积法生长的单根CdS纳米线SEM图; (b) SHG光谱与显微成像装置及CdS纳米线的SHG显微成像图; (c) 归一化处理的激光光谱(红色虚线)与SHG光谱(蓝色实线); (d) SHG信号强度和激发光强度平方之间的关系图; 测量误差也显示在图中; (e) 实验室框架的几何形状(XYZ), 线偏振泵浦激光沿Z轴传输. 泵浦激光的光电场EiXY平面内, 与纳米线生长轴成可变角度θ; (f) 晶体框架(xcyczc)在实验室框架中的相对位置; φzcZ轴之间的夹角, γX轴和zcxy平面上的投影($ c' $)之间的夹角, ωxcXY平面和xcyc平面的交线之间的夹角, 晶体zc的取向与CdS纳米线的c轴一致, c轴由φγ角定义
    Fig. 1.  Experimental setup and measurement of single CdS nanowire: (a) SEM image of the single CdS nanowire prepared via chemical vapor deposition growth; (b) SHG spectroscopic and microscopic imaging device and the SHG image of CdS nanowire; (c) normalized laser spectra (red dotted lines) versus SHG spectra (blue solid lines); (d) the relationship between SHG signal intensity and excitation intensity, error bar is also shown; (e) geometry of the laboratory frame (XYZ), the linearly polarized pumped laser propagates along the z axis, the opto-electric field Ei of the pumped laser in the XY plane has a variable angle θ with the growth axis of the nanowire; (f) the relative position of the crystal frame (xcyczc) in the laboratory frame, Φ is the angle between the zc and z axes, γ is the angle between the X axis and the projection of zc on the XY plane, ω is the angle between the intersection of the xc and XY planes and the xcyc planes, the orientation of zc is consistent with the C axis of CdS nanowires, which is defined by φ and γ angles.

    SHG测量的实验装置如图1(b)所示, 装置图中的元器件说明如下: fs oscillator, 飞秒脉冲振荡器; Pulse compressor, 脉冲压缩器; M, 反射镜; Polarizer, 偏振片; WP, 半波片; Obj, 显微物镜; S, 样品; CL, 聚光透镜; BS, 分束镜; BPF, 带通滤波片; PMT, 光电倍增管; Spectrometer, 高分辨光谱仪. 首先, 将波长为800 nm、脉宽为20 fs、重复频率为80 MHz的自制飞秒脉冲激光经过脉冲压缩器进行色散补偿. 然后经过起偏器(Thorlabs, LPVIS050-MP2)获得线性偏振激光. 线偏振激光的偏振角度通过精密控制器(Thorlabs, PRM1Z8)实现精密的角度旋转控制. 随后调节反射镜使得激光与显微物镜(Newport, 20/0.4)匹配到最佳, 并将激光在CdS纳米线中部入射. 产生的SHG信号连同入射激光通过聚光透镜(edmund optics, 0.5NA)收集, 并经过分束镜(BS, Thorlabs EBS2 50∶50)分为两路. 两路中放置带通滤波片(BPF, Chroma HQ400/40M-2P)滤掉入射激光. 接着, 粗调光路直至从光谱仪(Triax 320)或光电倍增管(PMT, Hamamatsu R4220)看到SHG信号. 随后, 优化脉冲压缩器中光栅的位置使得样品上激光的色散被完全补偿, 这时二次谐波信号逐渐增大, 直到不能增大为止. 同时观测二次谐波信号的变化, 该过程还需要辅助地调节聚光透镜的位置使其达到最佳; 最后, 通过调节光纤方位角使光耦合效率达到最高. 这时光路调节到了最优状态, 可以通过逐点移动载物台(mad city labs, Inc. Nano-Bios)位置实现单根纳米线的显微成像, 如图1(b)所示. 显微成像过程中光信号经过光电倍增管转化为电信号, 然后利用数据采集卡(National Instruments DAQ-6024E)进行模拟-数字信号转换, 最后利用Matlab软件实现成像. 图1(c)中蓝色实线为SHG信号的光谱图, 红色虚线是激光光谱图. 通过改变光波的激发功率, 得到二次谐波信号强度随入射光功率平方的变化关系如图1(d)所示. 图中测量误差在±4%范围内. 实验坐标示意图如图1(e), (f)所示, 其中, CdS纳米线轴向为X方向, 入射光方向为Z轴方向, 入射光垂直入射到CdS纳米线中部位置(⊥XY平面), 入射光电场分量EiX轴的夹角设为θ, 通过调节实验装置中的偏振片可得到不同入射光偏振方向下的SHG强度变化情况.

    光谱仪接收的SHG信号实验结果如图1(c), (d)所示. 在不同强度的激发光密度下, 得到以400 nm为中心的发射峰, 其峰值约在400 nm 处, 半高全宽(full width of half maximum, FWHM)为7.1 nm, 比激发光的FWHM (42.3 nm)窄很多. SHG信号强度与激发光功率平方的实验曲线图, 两者呈现出很好的线性关系. 该信号满足纳米线二次谐波的相关特性, 以此可确认实验中获得的信号正是CdS纳米线的SHG信号.

    偏振相关的倍频响应特性对晶体取向很敏感. 由于CdS纳米线的直径比激光的焦斑小得多, 故纳米线内部的电场可认为是均匀的. 为了计算入射光激发的二阶偏振, 晶体中的基频电场分量Ecx, Ecy, Ecz由方程(1)给出[16]:

    $$ \begin{split}& \left[ {\begin{array}{*{20}{c}} {({{{E_{cx}} - {E_{cy}}}})/{2}} \\ {{{\sqrt 3 {E_{cy}}}}/{2}} \\ {{E_{cz}}} \end{array}} \right] = \left[ {\begin{array}{*{20}{c}} {\cos (\gamma - \theta )\cos (\varphi )\sin (\omega ) + \sin (\gamma - \theta )\cos (\omega )} \\ {\begin{array}{*{20}{c}} {\cos (\gamma - \theta )\cos (\varphi )\cos (\omega ) - \sin (\gamma - \theta )\sin (\omega )} \\ {\cos (\gamma - \theta )\sin (\varphi )} \end{array}} \end{array}} \right]{E_{\text{i}}}. \end{split}$$ (1)

    而3个晶轴的倍频偏振分量(Pcx, Pcy, Pcz), 则通过方程(2)与Ecx, Ecy, Ecz相关联:

    $$\begin{split} \left[ {\begin{array}{*{20}{c}} {{P_{cx}}} \\ {{P_{cy}}} \\ {{P_{cz}}} \end{array}} \right] = 2{\varepsilon _0}\left[ {\begin{array}{*{20}{c}} 0&0&0&0&{{d_{15}}}&0 \\ 0&0&0&{{d_{15}}}&0&0 \\ {{d_{31}}}&{{d_{31}}}&{{d_{33}}}&0&0&0 \end{array}} \right] \cdot \left[ {\begin{array}{*{20}{c}} {E_{cx}^2} \\ {E_{cy}^2} \\ {E_{cz}^2} \\ {2{E_{cy}}{E_{cz}}} \\ {2{E_{cx}}{E_{cz}}} \\ {2{E_{cx}}{E_{cy}}} \end{array}} \right]. \end{split}$$ (2)

    其中, 倍频非线性系数d15 = 8.0 pm/V, d31= 7.4 pm/V, d33 = 14.2 pm/V[22]. CdS纳米线中的二阶极化分量可看作是在倍频振荡的电偶极子, 则SHG强度I经计算得

    $$ I = \frac{{c{k^4}{v^2}}}{{12{\text{π}}{\varepsilon _0}}}\left({\eta _{cx}}{\left| {{P_{cx}}} \right|^2} + {\eta _{cy}}{\left| {{P_{cy}}} \right|^2} + {\eta _{cz}}{\left| {{P_{cz}}} \right|^2}\right), $$ (3)

    式中, c为真空中的光速, k为波数, v为泵浦光下CdS纳米线的体积, $ {\varepsilon _0} $为真空介电常数, $ {\eta _{cx}}, \; {\eta _{cy}},\; {\eta _{cz}} $分别为3种倍频偏振$ {P_{cx}}, \; {P_{cy}},\; {P_{cz}} $的收集效率. 由于二阶偏振分量$ ({P}_{cx},\; {P}_{cy}, \; {P}_{cz}) $都是偏振角$ \theta $的 函数, 故倍频信号强度I与$ \theta $间的关系可从方程(3)获得.

    本部分将结合SHG光谱的实验测量和利用SHG响应用方程(3)的理论拟合来研究CdS纳米线的晶体取向问题. 实验中, 通过精密旋转图1(b)所示的实验装置中的半波片改变线性偏振光的偏振方向$ \theta $, 可以获得不同偏振方向对应的SHG光谱强度I. 实验测量结果利用Mathematica软件对实验数据进行画图(蓝色圆点), 得到如图2(a)所示的结果. 然后利用方程(3)对实验数据进行拟合处理, 得到如图2(a)所示红色实线的结果. 从图2(a)可以看出, 绝大多数实验数据与理论拟合结果吻合得较好, 只有少数几个数据点吻合得不太好. 这是由于实验本身具有如图1(d)所示的误差问题, 以及激光功率不稳定而致.

    图 2 测得的 SHG 强度与极化角θ的函数关系的极坐标图 (a) CdS纳米线的晶体取向确定为φ = 104°, γ = 39°, ω = 78°, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变γ值, 同时保持φ和ω与图(a)相同; (d)取向为φ = 78°, γ = 28°, ω = 85°的另一个CdS纳米线的SHG花型图; (e), (f)理论拟合, 只需改变γ值, 同时保持φ和ω与图(d)相同\r\nFig. 2. Polarization-dependent SHG patterns in different single CdS nanowires: (a) Crystal orientation of CdS nanowires is determined as φ = 104°, γ = 39°, ω = 78°, the points represent experimental data and the solid lines represent theoretical fittings; (b), (c) related theoretical fittings, only changing γ values while keeping φ and ω the same as panel (a); (d) the orientation is φ = 78°, γ = 28°, SHG pattern of another CdS nanowire with ω = 85°; (e), (f) theoretical fittings with different γ values, while φ and ω are remained the same as panel (d).
    图 2  测得的 SHG 强度与极化角θ的函数关系的极坐标图 (a) CdS纳米线的晶体取向确定为φ = 104°, γ = 39°, ω = 78°, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变γ值, 同时保持φω与图(a)相同; (d)取向为φ = 78°, γ = 28°, ω = 85°的另一个CdS纳米线的SHG花型图; (e), (f)理论拟合, 只需改变γ值, 同时保持φω与图(d)相同
    Fig. 2.  Polarization-dependent SHG patterns in different single CdS nanowires: (a) Crystal orientation of CdS nanowires is determined as φ = 104°, γ = 39°, ω = 78°, the points represent experimental data and the solid lines represent theoretical fittings; (b), (c) related theoretical fittings, only changing γ values while keeping φ and ω the same as panel (a); (d) the orientation is φ = 78°, γ = 28°, SHG pattern of another CdS nanowire with ω = 85°; (e), (f) theoretical fittings with different γ values, while φ and ω are remained the same as panel (d).

    图2(a), (d)显示了两种不同的单根CdS纳米线的偏振相关SHG响应. 图中两个样品的欧拉角分别确定为φ = 104°, γ = 39°, ω = 78°和φ = 78°, γ = 28°, ω = 85°. 为了研究参量γ对SHG响应模式的影响, 图2(b), (c)是在保持φω图2(a)中相同, 仅改变γ进行绘制. 可以看出γ的变化只是使花型图模式取向不同, 对模式形状没有影响. 因此, 图案形状由φω决定, 而γ决定两瓣图案的取向. γ对SHG响应的影响实际上也可以用3个偏振分量沿XY平面上的晶格投影来解释, 如(1)式和(2)式中所表达的一样. 在φω一定的条件下, γ并不能改变3个偏振分量在XY平面上的投影的大小. γ的变化只是这3个投影在XY平面上旋转, 从而导致两瓣图案的旋转, 但形状保持不变. 图2(f)是CdS纳米线的测量结果, 该结果进一步支持了这一结论. 根据图1(e), (f)可知, 3个参量γ, φω确定以后, 那么CdS纳米线的晶轴取向就被精密确定.

    研究角度ω对单根CdS纳米线SHG花型图的影响. 图3(a), (d)显示了两个单根CdS纳米线的偏振相关SHG坐标图, 显示了类似的双波瓣模式. 它们之间的区别是小突起的位置不同. 从图中可以看出, ω值对小突起的形状和大小都有很明显的影响. 正如(2)式描述, $ {P_{cx}}, {\text{ }}{P_{cy}} $两个分量决定了图案中的小突起等细节. 根据理论拟合公式计算得出, 图3(a), (d)中样品的欧拉角分别确定为φ = 74°, γ = 39°, ω = 80°和φ = 78°, γ = 28°, ω = 85°. 在保持γφ角不变的前提下, 对ω分别取不同的值, 模拟结果如图3(b), (c)图3(e), (f)所示. 因此, 改变ω的值会使SHG偏振响应形状中部的凹陷程度与凹陷方向发生变化.

    图 3 不同单根CdS纳米线中偏振相关的SHG强度随偏振角θ的变化 (a) CdS纳米线的晶体取向确定为φ = 74°, γ = 39°, ω = 80°, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变ω值, 同时保持φ和γ与图(a)相同; (d)取向为φ = 78°, γ = 28°, ω = 85°的另一个CdS纳米线的SHG花型图; (e), (f)理论拟合, 只需改变 ω 值, 同时保持φ和γ与图(d)中相同\r\nFig. 3. Polarization-dependent SHG patterns in different single CdS nanowires: (a) Crystal orientation of CdS nanowires is determined as φ = 74°, γ = 39°, ω = 80°, the points represent experimental data and the solid lines represent theoretical fittings; (b), (c) related theoretical fittings, only changing ω values while keeping φ and γ the same as panel (a); (d) the orientation is φ = 78°, γ = 28°, SHG pattern of another CdS nanowire with ω = 85°; (e), (f) theoretical fittings with different ω values, while φ and γ are remained the same as panel (d).
    图 3  不同单根CdS纳米线中偏振相关的SHG强度随偏振角θ的变化 (a) CdS纳米线的晶体取向确定为φ = 74°, γ = 39°, ω = 80°, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变ω值, 同时保持φγ与图(a)相同; (d)取向为φ = 78°, γ = 28°, ω = 85°的另一个CdS纳米线的SHG花型图; (e), (f)理论拟合, 只需改变 ω 值, 同时保持φγ与图(d)中相同
    Fig. 3.  Polarization-dependent SHG patterns in different single CdS nanowires: (a) Crystal orientation of CdS nanowires is determined as φ = 74°, γ = 39°, ω = 80°, the points represent experimental data and the solid lines represent theoretical fittings; (b), (c) related theoretical fittings, only changing ω values while keeping φ and γ the same as panel (a); (d) the orientation is φ = 78°, γ = 28°, SHG pattern of another CdS nanowire with ω = 85°; (e), (f) theoretical fittings with different ω values, while φ and γ are remained the same as panel (d).

    图4展示了角度φ对偏振相关SHG响应的影响. 发现图4(a)中的CdS纳米线取向为φ = 74°, γ = 39°, ω = 80°. 图4(b), (c)绘制了理论模拟结果, 只需改变φ值, 同时保持γω图4(a)中的参数相同. 随着φ的增大, SHG图形中的突起逐渐变大, 图4(b), (c)中的凹凸程度更加明显. 在ω不同的情况下, 随着 φ的变化, 3个二阶极化强度的相对变化率也不同. 因此, 随着φ的减小, SHG 图案的相关演化过程是不同的. 这可以通过对比本文和参考文献[16]来证明.

    图 4 测量的SHG强度作为偏振角的函数的极坐标图 (a)晶体取向为 φ = 74°, γ = 39°, ω = 80°的单根CdS纳米线的SHG图形, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变φ的值, 同时保持γ和ω与图(a)中的相同\r\nFig. 4. Measured SHG strength as a function of the polarization angle θ is shown in polar coordinates: (a) SHG pattern of a single CdS nanowire with the crystal orientation φ = 74°, γ = 39°, ω = 80° is obtained, points represent experimental data, while the solid lines represent theoretical fittings; (b), (c) theoretical fits with different φ values, while γ and ω are remained the same as panel (a).
    图 4  测量的SHG强度作为偏振角的函数的极坐标图 (a)晶体取向为 φ = 74°, γ = 39°, ω = 80°的单根CdS纳米线的SHG图形, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变φ的值, 同时保持γω与图(a)中的相同
    Fig. 4.  Measured SHG strength as a function of the polarization angle θ is shown in polar coordinates: (a) SHG pattern of a single CdS nanowire with the crystal orientation φ = 74°, γ = 39°, ω = 80° is obtained, points represent experimental data, while the solid lines represent theoretical fittings; (b), (c) theoretical fits with different φ values, while γ and ω are remained the same as panel (a).

    综上, 通过SHG光谱强度与激发光偏振角度的变化关系定量研究了CdS纳米线的空间取向, 实验结果与理论计算符合得较好, 证明了该方法的可行性. 也就是说, CdS纳米线晶轴的空间取向可以通过偏振相关的SHG光谱进行定位. 这种方法的准确性在ZnS的晶轴取向研究中通过高分辨透射电子显微镜(HRTEM)进行验证[16]. 另外, 我们还可以利用同样的原理, 利用SHG对纳米线进行偏振显微成像, 图像上纳米线的明暗强度可以反映出纳米线的空间取向, 可以作为CdS纳米线表征的一个重要辅助手段. 图5是偏振相关的SHG显微成像, 也可以用于CdS纳米线的空间取向研究. 图5(a), (c)中可以看出在入射激光偏振方向改变时纳米线1, 2, 3的SHG亮暗强度明显发生了变化, 纳米线1和2的SHG强度增大, 而纳米线3的SHG强度减小. 这也可以从相应的SHG光谱图中看出, 如图5(b), (d)所示. 有趣的是, 图5(a), (c)中纳米线1和3看出, SHG强度在同一根纳米线上不同位置分布与变化各有差异, 有间隔性强弱变化现象. 随着入射光偏振方向的变化, SHG强弱分别在纳米线上不同位置又发生了变化. SHG的这种偏振响应特性反映了纳米线结构对称性特征. 因此, 在CdS纳米线不同部位、不同入射光偏振方向研究其SHG光谱得到的结果不同. SHG显微成像可以将CdS纳米线的空间位置可视化, 相比SHG光谱更加方便, 是研究SHG光谱纳米线很好的补充手段. 尽管SHG光学显微成像具有有限的空间分辨率, 其分辨率不如扫描电子显微镜和透射电子显微镜高, 但SHG显微成像可以研究CdS纳米线不同部位SHG强度(结构对称性)的分布情况, 这是电子显微镜很难做到的. 因此, 结合SHG光谱与显微成像为纳米线空间定位以及结构对称性的详细研究提供了新的思路.

    图 5 不同偏振方向下CdS纳米线的SHG显微成像图与相应光谱图 (a)偏振方向角为0°的SHG显微成像图; (b) 偏振方向角为0°的SHG光谱; (c)偏振方向角为45°的SHG显微成像图; (d) 偏振方向角为45°的SHG光谱\r\nFig. 5. SHG microscopic image of CdS nanowire under different polarization angle of input laser: (a) SHG microscopic image of CdS nanowire with polarization angle at 0°; (b) SHG spectrum of CdS nanowire with polarization angle at 0°; (c) SHG microscopic image of CdS nanowire with polarization angle at 45°; (d) SHG spectrum of CdS nanowire with polarization angle at 45°.
    图 5  不同偏振方向下CdS纳米线的SHG显微成像图与相应光谱图 (a)偏振方向角为0°的SHG显微成像图; (b) 偏振方向角为0°的SHG光谱; (c)偏振方向角为45°的SHG显微成像图; (d) 偏振方向角为45°的SHG光谱
    Fig. 5.  SHG microscopic image of CdS nanowire under different polarization angle of input laser: (a) SHG microscopic image of CdS nanowire with polarization angle at 0°; (b) SHG spectrum of CdS nanowire with polarization angle at 0°; (c) SHG microscopic image of CdS nanowire with polarization angle at 45°; (d) SHG spectrum of CdS nanowire with polarization angle at 45°.

    本文利用自制SHG显微镜实验测量了不同单根纳米线的SHG强度随着入射激光偏振角度的变化, 并利用(3)式对测量结果进行了理论拟合. 通过将实验测量结果与理论计算相互比对, 确定了不同单根纳米线晶轴的空间取向的相对位置, 并详细研究了3个参量γ, ωφ对于不同单CdS根纳米线SHG响应花型图案的影响. 研究表明, 前人提出的全光学方法不仅适用于ZnS纳米线, 也适用于CdS纳米线的高精密空间定位, 具有广泛的适用性和可靠性. 尽管CdS纳米线的SHG信号随着偏振角度变化的花型图与ZnS类似, 但也展示了不一样的一面, 主要原因是二者的二阶极化率系数不同. 最后, 本文提出结合利用SHG光谱与SHG显微成像研究纳米线空间取向与结构对称性问题, 拓展了纳米线结构与晶轴取向的研究思路与研究方法. 研究结果对于精密测量单根CdS纳米线空间取向具有重要参考价值.

    本篇论文的关联数据可在科学数据银行https://doi.org/10.57760/sciencedb.10676中访问获取.

    [1]

    白瑞雪, 杨珏晗, 魏大海, 魏钟鸣 2020 物理学报 69 184211Google Scholar

    Bai R X, Yang Y H, Wei D H, Wei Z M 2020 Acta Phys. Sin. 69 184211Google Scholar

    [2]

    Fan X, Zhang M L, Shafiq I, Zhang W J, Lee C S, Lee S T 2009 Cryst. Growth Des. 9 1375Google Scholar

    [3]

    Lin Y F, Song J, Ding Y, Lu S Y, Zhang Z L 2008 Adv. Mater. 20 3127Google Scholar

    [4]

    Zhai T Y, Gu Z J, Zhong H Z, Dong Y, Ma Y, Fu H B, Li Y F, Yao J N 2007 Cryst. Growth Des. 7 488Google Scholar

    [5]

    Lin Y F, Song J, Ding Y, Lu S Y, Zhang Z L 2008 Appl. Phys. Lett. 92 022105Google Scholar

    [6]

    Zhai T Y, Fang X S, Li L, Bando Y, Golberg D 2010 Nanoscale 2 168Google Scholar

    [7]

    Ma R M, Wei X L, Dai L, Dai L, Huo H B, Qin G G 2007 Nanotechnology 18 205605Google Scholar

    [8]

    Li H Q, Wang X, Xu J Q, Zhang Q, Bando Y, Golberg D 2013 Adv. Mater. 25 3017Google Scholar

    [9]

    Nakayama Y, Pauzauskie P, Radenovic A, Onorato R M, Saykally R J, Liphardt J, Yang P D 2007 Nature 447 1098Google Scholar

    [10]

    Prasanth R, van Vugt L K, Vanmaekelbergh D A M, Gerritsen H C 2006 Appl. Phys. Lett. 88 181501Google Scholar

    [11]

    Tian B Z, Zheng X L, Kempa T J, Fang Y, Yu N F, Yu G H, Huang J L, Lieber C M 2007 Nature 449 885Google Scholar

    [12]

    Allen J E, Hemesath E R, Perea D E, Lensch-Falk J L, Liz Y, Yin F, Gass M H, Wang P, Bleloch A L, Palmer R E, Lauhon L J 2008 Nat. Nanotechnol. 3 168Google Scholar

    [13]

    Mu S, Chang J C, Lee S T 2008 Nano Lett. 8 104Google Scholar

    [14]

    Peng K Q, Wang X, Wu X L, Lee S T 2009 Nano Lett. 9 3704Google Scholar

    [15]

    Nadia M J, Nada H 2018 International Conference on Materials Engineering and Science Istanbul Turkey, August 8–11, 2018 p012111

    [16]

    Hu H B, Wang K, Long H, Liu W W, Wang B, Lu P X 2015 Nano Lett. 15 3351Google Scholar

    [17]

    Bautista G, Makitalo J, Chen Ya, Dhaka V, Grasso M, Karvonen L, Jiang H, Huttunen M J, Huhtio T, Lipsanen H, Kauranen M 2015 Nano Lett. 15 1564Google Scholar

    [18]

    Kim W, Ng J K, Kunitake M E, Conklin B R, Yang P D 2007 J. Am. Chem. Soc. 129 7728Google Scholar

    [19]

    Jung Y, Tong L, Tanaudommongkon A, Cheng J X, Yang C 2009 Nano Lett. 9 2440Google Scholar

    [20]

    Xu J Y, Rechav K, Popovitz-Biro R, Nevo I, Feldman Y, Joselevich E 2018 Adv. Mater. 30 1800413Google Scholar

    [21]

    Wang J J, Zhang X, Deng J B, Hu X, Hu Y, Mao J, Ma M, Gao Y H, Wei Y C, Li F, Wang Z H, Liu X L, Xu J Y, Ren L Q 2021 Molecules 26 5178Google Scholar

    [22]

    Shoji I, Kondo T, Ito R 2002 Opt. Quant. Electron. 34 797Google Scholar

  • 图 1  单根CdS纳米线的SHG实验装置与测量结果研究 (a) 化学气相沉积法生长的单根CdS纳米线SEM图; (b) SHG光谱与显微成像装置及CdS纳米线的SHG显微成像图; (c) 归一化处理的激光光谱(红色虚线)与SHG光谱(蓝色实线); (d) SHG信号强度和激发光强度平方之间的关系图; 测量误差也显示在图中; (e) 实验室框架的几何形状(XYZ), 线偏振泵浦激光沿Z轴传输. 泵浦激光的光电场EiXY平面内, 与纳米线生长轴成可变角度θ; (f) 晶体框架(xcyczc)在实验室框架中的相对位置; φzcZ轴之间的夹角, γX轴和zcxy平面上的投影($ c' $)之间的夹角, ωxcXY平面和xcyc平面的交线之间的夹角, 晶体zc的取向与CdS纳米线的c轴一致, c轴由φγ角定义

    Fig. 1.  Experimental setup and measurement of single CdS nanowire: (a) SEM image of the single CdS nanowire prepared via chemical vapor deposition growth; (b) SHG spectroscopic and microscopic imaging device and the SHG image of CdS nanowire; (c) normalized laser spectra (red dotted lines) versus SHG spectra (blue solid lines); (d) the relationship between SHG signal intensity and excitation intensity, error bar is also shown; (e) geometry of the laboratory frame (XYZ), the linearly polarized pumped laser propagates along the z axis, the opto-electric field Ei of the pumped laser in the XY plane has a variable angle θ with the growth axis of the nanowire; (f) the relative position of the crystal frame (xcyczc) in the laboratory frame, Φ is the angle between the zc and z axes, γ is the angle between the X axis and the projection of zc on the XY plane, ω is the angle between the intersection of the xc and XY planes and the xcyc planes, the orientation of zc is consistent with the C axis of CdS nanowires, which is defined by φ and γ angles.

    图 2  测得的 SHG 强度与极化角θ的函数关系的极坐标图 (a) CdS纳米线的晶体取向确定为φ = 104°, γ = 39°, ω = 78°, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变γ值, 同时保持φω与图(a)相同; (d)取向为φ = 78°, γ = 28°, ω = 85°的另一个CdS纳米线的SHG花型图; (e), (f)理论拟合, 只需改变γ值, 同时保持φω与图(d)相同

    Fig. 2.  Polarization-dependent SHG patterns in different single CdS nanowires: (a) Crystal orientation of CdS nanowires is determined as φ = 104°, γ = 39°, ω = 78°, the points represent experimental data and the solid lines represent theoretical fittings; (b), (c) related theoretical fittings, only changing γ values while keeping φ and ω the same as panel (a); (d) the orientation is φ = 78°, γ = 28°, SHG pattern of another CdS nanowire with ω = 85°; (e), (f) theoretical fittings with different γ values, while φ and ω are remained the same as panel (d).

    图 3  不同单根CdS纳米线中偏振相关的SHG强度随偏振角θ的变化 (a) CdS纳米线的晶体取向确定为φ = 74°, γ = 39°, ω = 80°, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变ω值, 同时保持φγ与图(a)相同; (d)取向为φ = 78°, γ = 28°, ω = 85°的另一个CdS纳米线的SHG花型图; (e), (f)理论拟合, 只需改变 ω 值, 同时保持φγ与图(d)中相同

    Fig. 3.  Polarization-dependent SHG patterns in different single CdS nanowires: (a) Crystal orientation of CdS nanowires is determined as φ = 74°, γ = 39°, ω = 80°, the points represent experimental data and the solid lines represent theoretical fittings; (b), (c) related theoretical fittings, only changing ω values while keeping φ and γ the same as panel (a); (d) the orientation is φ = 78°, γ = 28°, SHG pattern of another CdS nanowire with ω = 85°; (e), (f) theoretical fittings with different ω values, while φ and γ are remained the same as panel (d).

    图 4  测量的SHG强度作为偏振角的函数的极坐标图 (a)晶体取向为 φ = 74°, γ = 39°, ω = 80°的单根CdS纳米线的SHG图形, 点代表实验数据, 实线代表理论拟合; (b), (c)相关的理论拟合, 只需改变φ的值, 同时保持γω与图(a)中的相同

    Fig. 4.  Measured SHG strength as a function of the polarization angle θ is shown in polar coordinates: (a) SHG pattern of a single CdS nanowire with the crystal orientation φ = 74°, γ = 39°, ω = 80° is obtained, points represent experimental data, while the solid lines represent theoretical fittings; (b), (c) theoretical fits with different φ values, while γ and ω are remained the same as panel (a).

    图 5  不同偏振方向下CdS纳米线的SHG显微成像图与相应光谱图 (a)偏振方向角为0°的SHG显微成像图; (b) 偏振方向角为0°的SHG光谱; (c)偏振方向角为45°的SHG显微成像图; (d) 偏振方向角为45°的SHG光谱

    Fig. 5.  SHG microscopic image of CdS nanowire under different polarization angle of input laser: (a) SHG microscopic image of CdS nanowire with polarization angle at 0°; (b) SHG spectrum of CdS nanowire with polarization angle at 0°; (c) SHG microscopic image of CdS nanowire with polarization angle at 45°; (d) SHG spectrum of CdS nanowire with polarization angle at 45°.

  • [1]

    白瑞雪, 杨珏晗, 魏大海, 魏钟鸣 2020 物理学报 69 184211Google Scholar

    Bai R X, Yang Y H, Wei D H, Wei Z M 2020 Acta Phys. Sin. 69 184211Google Scholar

    [2]

    Fan X, Zhang M L, Shafiq I, Zhang W J, Lee C S, Lee S T 2009 Cryst. Growth Des. 9 1375Google Scholar

    [3]

    Lin Y F, Song J, Ding Y, Lu S Y, Zhang Z L 2008 Adv. Mater. 20 3127Google Scholar

    [4]

    Zhai T Y, Gu Z J, Zhong H Z, Dong Y, Ma Y, Fu H B, Li Y F, Yao J N 2007 Cryst. Growth Des. 7 488Google Scholar

    [5]

    Lin Y F, Song J, Ding Y, Lu S Y, Zhang Z L 2008 Appl. Phys. Lett. 92 022105Google Scholar

    [6]

    Zhai T Y, Fang X S, Li L, Bando Y, Golberg D 2010 Nanoscale 2 168Google Scholar

    [7]

    Ma R M, Wei X L, Dai L, Dai L, Huo H B, Qin G G 2007 Nanotechnology 18 205605Google Scholar

    [8]

    Li H Q, Wang X, Xu J Q, Zhang Q, Bando Y, Golberg D 2013 Adv. Mater. 25 3017Google Scholar

    [9]

    Nakayama Y, Pauzauskie P, Radenovic A, Onorato R M, Saykally R J, Liphardt J, Yang P D 2007 Nature 447 1098Google Scholar

    [10]

    Prasanth R, van Vugt L K, Vanmaekelbergh D A M, Gerritsen H C 2006 Appl. Phys. Lett. 88 181501Google Scholar

    [11]

    Tian B Z, Zheng X L, Kempa T J, Fang Y, Yu N F, Yu G H, Huang J L, Lieber C M 2007 Nature 449 885Google Scholar

    [12]

    Allen J E, Hemesath E R, Perea D E, Lensch-Falk J L, Liz Y, Yin F, Gass M H, Wang P, Bleloch A L, Palmer R E, Lauhon L J 2008 Nat. Nanotechnol. 3 168Google Scholar

    [13]

    Mu S, Chang J C, Lee S T 2008 Nano Lett. 8 104Google Scholar

    [14]

    Peng K Q, Wang X, Wu X L, Lee S T 2009 Nano Lett. 9 3704Google Scholar

    [15]

    Nadia M J, Nada H 2018 International Conference on Materials Engineering and Science Istanbul Turkey, August 8–11, 2018 p012111

    [16]

    Hu H B, Wang K, Long H, Liu W W, Wang B, Lu P X 2015 Nano Lett. 15 3351Google Scholar

    [17]

    Bautista G, Makitalo J, Chen Ya, Dhaka V, Grasso M, Karvonen L, Jiang H, Huttunen M J, Huhtio T, Lipsanen H, Kauranen M 2015 Nano Lett. 15 1564Google Scholar

    [18]

    Kim W, Ng J K, Kunitake M E, Conklin B R, Yang P D 2007 J. Am. Chem. Soc. 129 7728Google Scholar

    [19]

    Jung Y, Tong L, Tanaudommongkon A, Cheng J X, Yang C 2009 Nano Lett. 9 2440Google Scholar

    [20]

    Xu J Y, Rechav K, Popovitz-Biro R, Nevo I, Feldman Y, Joselevich E 2018 Adv. Mater. 30 1800413Google Scholar

    [21]

    Wang J J, Zhang X, Deng J B, Hu X, Hu Y, Mao J, Ma M, Gao Y H, Wei Y C, Li F, Wang Z H, Liu X L, Xu J Y, Ren L Q 2021 Molecules 26 5178Google Scholar

    [22]

    Shoji I, Kondo T, Ito R 2002 Opt. Quant. Electron. 34 797Google Scholar

  • [1] 窦琳, 麻艳娜, 顾兆麒, 刘家彤, 谷付星. 基于半导体纳米线/锥形微光纤探针的被动式近场光学扫描成像. 物理学报, 2022, 71(4): 044201. doi: 10.7498/aps.71.20211810
    [2] 洪昕, 王晓强, 李冬雪, 商云晶. 不依赖激发光偏振方向的芯帽异构二聚体. 物理学报, 2022, 71(3): 037801. doi: 10.7498/aps.71.20211381
    [3] 窦琳, 麻艳娜, 顾兆麒, 刘家彤, 谷付星. 基于半导体纳米线/锥形微光纤探针的被动式近场光学扫描成像. 物理学报, 2021, (): . doi: 10.7498/aps.70.20211810
    [4] 戚志明, 梁文耀. 表层厚度渐变一维耦合腔光子晶体的反射相位特性及其应用. 物理学报, 2016, 65(7): 074201. doi: 10.7498/aps.65.074201
    [5] 高鹏飞, 刘铁, 柴少伟, 董蒙, 王强. 磁感应强度和冷却速率对Tb0.27Dy0.73Fe1.95合金凝固过程中取向行为的影响. 物理学报, 2016, 65(3): 038104. doi: 10.7498/aps.65.038104
    [6] 王贤斌, 林鑫, 王理林, 白贝贝, 王猛, 黄卫东. 晶体取向对定向凝固枝晶生长的影响. 物理学报, 2013, 62(10): 108103. doi: 10.7498/aps.62.108103
    [7] 钟明亮, 李山, 熊祖洪, 张中月. 十字形银纳米结构的表面等离子体光子学性质. 物理学报, 2012, 61(2): 027803. doi: 10.7498/aps.61.027803
    [8] 王理林, 王贤斌, 王红艳, 林鑫, 黄卫东. 晶体取向对定向凝固平界面失稳行为的影响. 物理学报, 2012, 61(14): 148104. doi: 10.7498/aps.61.148104
    [9] 李川, 刘敬华, 陈立彪, 蒋成保, 徐惠彬. Fe81Ga19合金晶体生长取向与磁致伸缩性能. 物理学报, 2011, 60(9): 097505. doi: 10.7498/aps.60.097505
    [10] 李山, 钟明亮, 张礼杰, 熊祖洪, 张中月. 偏振方向及结构间耦合作用对空心方形银纳米结构表面等离子体共振的影响. 物理学报, 2011, 60(8): 087806. doi: 10.7498/aps.60.087806
    [11] 厉以宇, 王媛媛, 陈浩, 朱德喜, 胡川, 瞿佳. 基于二维结构薄膜的偏振选择相位光栅的研究. 物理学报, 2010, 59(7): 5110-5115. doi: 10.7498/aps.59.5110
    [12] 王华滔, 秦昭栋, 倪玉山, 张文. 不同晶体取向下纳米压痕的多尺度模拟. 物理学报, 2009, 58(2): 1057-1063. doi: 10.7498/aps.58.1057
    [13] 张 姗, 吴福全, 吴闻迪. 多级石英晶体旋光光学滤波器的滤波特性. 物理学报, 2008, 57(8): 5020-5026. doi: 10.7498/aps.57.5020
    [14] 王立锋, 叶文华, 李英骏. 二维不可压缩流体Kelvin-Helmholtz不稳定性的二次谐波产生. 物理学报, 2008, 57(5): 3038-3043. doi: 10.7498/aps.57.3038
    [15] 汪 渊, 宋忠孝, 徐可为. 体心立方金属W薄膜晶体取向的膜厚尺寸效应及其表面映射. 物理学报, 2007, 56(12): 7248-7254. doi: 10.7498/aps.56.7248
    [16] 沈晓鹏, 韩 奎, 沈义峰, 李海鹏, 肖正伟, 郑 健. 二维光子晶体中与电磁波偏振态无关的自准直. 物理学报, 2006, 55(6): 2760-2764. doi: 10.7498/aps.55.2760
    [17] 马仰华, 赵建林, 王文礼, 黄卫东. 双轴晶体中二次谐波产生的最佳相位匹配条件. 物理学报, 2005, 54(5): 2084-2089. doi: 10.7498/aps.54.2084
    [18] 李蓉, 任坤, 任晓斌, 周静, 刘大禾. 一维光子晶体带隙结构对不同偏振态的角度和波长响应. 物理学报, 2004, 53(8): 2520-2525. doi: 10.7498/aps.53.2520
    [19] 黄金哲, 任德明, 胡孝勇, 曲彦臣, Y.Andreev, P.Geiko, V.Badikov, G.Lanskii. 掺杂晶体Cd0.35Hg0.65Ga2S4的光学特性. 物理学报, 2004, 53(11): 3761-3765. doi: 10.7498/aps.53.3761
    [20] 王屹山, 陈国夫, 于连君, 赵尚弘, 赵 卫. 高效、高峰值功率蓝光飞秒脉冲产生研究. 物理学报, 2000, 49(12): 2378-2382. doi: 10.7498/aps.49.2378
计量
  • 文章访问数:  1582
  • PDF下载量:  104
出版历程
  • 收稿日期:  2024-05-28
  • 修回日期:  2024-07-10
  • 上网日期:  2024-07-13
  • 刊出日期:  2024-08-20

/

返回文章
返回