| [1] |
Deng Wen, Wang Li-Sheng, Liu Jia-Ning, Yu Xue-Ling, Chen Feng-Xiang. Resistive switching behavior and mechanism of multilayer MoS2 memtransistor under control of back gate bias and light illumination. Acta Physica Sinica,
2021, 70(21): 217302.
doi: 10.7498/aps.70.20210750
|
| [2] |
Guo Ning, Zhou Zhou, Ni Jian, Cai Hong-Kun, Zhang Jian-Jun, Sun Yan-Yan, Li Juan. Thin film transistor based on two-dimensional organic-inorganic hybrid perovskite. Acta Physica Sinica,
2020, 69(19): 198102.
doi: 10.7498/aps.69.20200701
|
| [3] |
Wu Xin-Yu, Han Wei-Hua, Yang Fu-Hua. Quantum transport relating to impurity quantum dots in silicon nanostructure transistor. Acta Physica Sinica,
2019, 68(8): 087301.
doi: 10.7498/aps.68.20190095
|
| [4] |
Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica,
2019, 68(24): 247203.
doi: 10.7498/aps.68.20191153
|
| [5] |
Zhu Yan-Xu, Song Hui-Hui, Wang Yue-Hua, Li Lai-Long, Shi Dong. Design and fabrication of high electron mobility transistor devices with gallium nitride-based. Acta Physica Sinica,
2017, 66(24): 247203.
doi: 10.7498/aps.66.247203
|
| [6] |
Guo Li-Qiang, Tao Jian, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning. Corn starch solid electrolyte gated proton/electron hybrid synaptic transistor. Acta Physica Sinica,
2017, 66(16): 168501.
doi: 10.7498/aps.66.168501
|
| [7] |
Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing. Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load. Acta Physica Sinica,
2016, 65(15): 158501.
doi: 10.7498/aps.65.158501
|
| [8] |
Guo Chun-Sheng, Li Shi-Wei, Ren Yun-Xiang, Gao Li, Feng Shi-Wei, Zhu Hui. Influence of power dissipation and case temperature on thermal resistance of AlGaN/GaN high-speed electron mobility transistor. Acta Physica Sinica,
2016, 65(7): 077201.
doi: 10.7498/aps.65.077201
|
| [9] |
Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2015, 64(11): 118502.
doi: 10.7498/aps.64.118502
|
| [10] |
Liu Yuan, Wu Wei-Jing, Li Bin, En Yun-Fei, Wang Lei, Liu Yu-Rong. Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors. Acta Physica Sinica,
2014, 63(9): 098503.
doi: 10.7498/aps.63.098503
|
| [11] |
Liu Jing, Guo Fei, Gao Yong. Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction. Acta Physica Sinica,
2014, 63(4): 048501.
doi: 10.7498/aps.63.048501
|
| [12] |
Wang Lei, Steve Yang. Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistors. Acta Physica Sinica,
2010, 59(1): 571-578.
doi: 10.7498/aps.59.571
|
| [13] |
Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica,
2007, 56(2): 1105-1109.
doi: 10.7498/aps.56.1105
|
| [14] |
Cheng Peng-Fei, Li Sheng-Tao, Jiao Xing-Liu. The conduction process and the equivalent barrier height in ZnO-Bi2O3 based varistor ceramics. Acta Physica Sinica,
2006, 55(8): 4253-4258.
doi: 10.7498/aps.55.4253
|
| [15] |
Liu Hai-Wen, Sun Xiao-Wei, Cheng Zhi-Qun, Che Yan-Feng, Li Zheng-Fan. A novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model. Acta Physica Sinica,
2003, 52(9): 2298-2303.
doi: 10.7498/aps.52.2298
|
| [16] |
XIN XIAN-JIE. THE SWITCHING PROCESS OF A TRANSISTOR SCHMITT CIRCUIT. Acta Physica Sinica,
1976, 25(1): 10-22.
doi: 10.7498/aps.25.10
|
| [17] |
. . Acta Physica Sinica,
1975, 24(5): 327-330.
doi: 10.7498/aps.24.327
|
| [18] |
YANG CHU-LIANG. THE DESIGN OF POWER TRANSISTOR EMITTER. Acta Physica Sinica,
1966, 22(8): 886-904.
doi: 10.7498/aps.22.886
|
| [19] |
HU PEI-KAUNG. SCATTERING MATRIX AND EQUIVALENT CIRCUIT OF AN X-BAND RECTANGULAR WAVEGUIDE CONTAINING FERRITE POSTS. Acta Physica Sinica,
1966, 22(9): 1069-1076.
doi: 10.7498/aps.22.1069
|
| [20] |
CHENG CHUNG-CHIH. ANALYSIS OF JUNCTION TRANSISTOR CONVERTERS. Acta Physica Sinica,
1959, 15(10): 525-534.
doi: 10.7498/aps.15.525
|
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