-
-
(1)Foundation,forResearchandTechnology-Hellas,P.O.Box1527,Heraklion7lll0,Crete,Greece; (2)中国科学院红外物理国家重点实验室,上海200083
-
-
[1] Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301. doi: 10.7498/aps.70.20210700 [2] Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica, 2021, 70(11): 116102. doi: 10.7498/aps.70.20202028 [3] Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao. Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica, 2019, 68(24): 248501. doi: 10.7498/aps.68.20191311 [4] Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica, 2019, 68(24): 247203. doi: 10.7498/aps.68.20191153 [5] Xi Xiao-Wen, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang. Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse. Acta Physica Sinica, 2017, 66(7): 078401. doi: 10.7498/aps.66.078401 [6] Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402. doi: 10.7498/aps.65.038402 [7] Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica, 2016, 65(16): 168501. doi: 10.7498/aps.65.168501 [8] Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202. doi: 10.7498/aps.62.157202 [9] Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2012, 61(5): 057202. doi: 10.7498/aps.61.057202 [10] Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng. Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301. doi: 10.7498/aps.61.207301 [11] Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301. doi: 10.7498/aps.61.047301 [12] Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica, 2011, 60(1): 017205. doi: 10.7498/aps.60.017205 [13] Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica, 2010, 59(10): 7333-7337. doi: 10.7498/aps.59.7333 [14] Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng. Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor. Acta Physica Sinica, 2008, 57(4): 2456-2461. doi: 10.7498/aps.57.2456 [15] Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica, 2008, 57(7): 4487-4491. doi: 10.7498/aps.57.4487 [16] Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121. doi: 10.7498/aps.56.4117 [17] Liu Hong-Xia, Hao Yue, Zhang Tao, Zheng Xue-Feng, Ma Xiao-Hua. Study on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs. Acta Physica Sinica, 2003, 52(4): 984-988. doi: 10.7498/aps.52.984 [18] Lv YONG-LIANG, ZHOU SHI-PING, XU DE-MING. ANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION. Acta Physica Sinica, 2000, 49(7): 1394-1399. doi: 10.7498/aps.49.1394 [19] Shen Wen-Zhong, Tang Wen-Guo, Shen Xue-Chu, A.Dimoulas. . Acta Physica Sinica, 1995, 44(5): 779-787. doi: 10.7498/aps.44.779 [20] LU LI-WU, ZHOU JIE, LIANG JI-BEN, KONG MEI-YING. DEEP LEVEL STUDIES OF P-HEMT STRUCTURE GROWN BY MBE. Acta Physica Sinica, 1993, 42(5): 817-823. doi: 10.7498/aps.42.817
Catalog
Metrics
- Abstract views: 7004
- PDF Downloads: 556
- Cited By: 0
Publishing process
- Received Date:
01 March 1994
- Published Online:
20 May 1995