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Lin Ming-Yue, Ju Bo, Li Yan, Chen Xue-Lian. Performance of 2-bromoterephthalic acid passivated all-inorganic perovskite cells. Acta Physica Sinica,
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Cheng Chao, Wang Xun, Sun Jia-Xing, Cao Chao-Ming, Ma Yun-Li, Liu Yan-Xia. Electronic structure calculation of Cr content effect on corrosion resistance of Ti-Nb-Cr alloy. Acta Physica Sinica,
2018, 67(19): 197101.
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Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei. Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica,
2018, 67(16): 168501.
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Wang Xiao-Ka, Tang Fu-Ling, Xue Hong-Tao, Si Feng-Juan, Qi Rong-Fei, Liu Jing-Bo. First-principles study of H, Cl and F passivation for Cu2ZnSnS4(112) surface states. Acta Physica Sinica,
2018, 67(16): 166401.
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2015, 64(20): 207101.
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Gao Tan-Hua. Structural and electronic properties of hydrogenated bilayer silicene. Acta Physica Sinica,
2015, 64(7): 076801.
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He Yan-Bin, Jia Jian-Feng, Wu Hai-Shun. First-principles study of stability and electronic structure of N2H4 adsorption on NiFe(111) alloy surface. Acta Physica Sinica,
2015, 64(20): 203101.
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Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua. Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica,
2015, 64(19): 198801.
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Gao Tan-Hua, Wu Shun-Qing, Zhang Peng, Zhu Zi-Zhong. Structural and electronic properties of hydrogenated bilayer boron nitride. Acta Physica Sinica,
2014, 63(1): 016801.
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Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang. Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica,
2013, 62(19): 197301.
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Zheng Xue, Yu Xue-Gong, Yang De-Ren. Passivation property of -Si:H/SiNx stack-layer film in crystalline silicon solar cells. Acta Physica Sinica,
2013, 62(19): 198801.
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Zhang Xiang, Liu Bang-Wu, Xia Yang, Li Chao-Bo, Liu Jie, Shen Ze-Nan. The passivation of Al2O3 and its applications in the crystalline silicon solar cell. Acta Physica Sinica,
2012, 61(18): 187303.
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Wang Yu-Mei, Pei Hui-Xia, Ding Jun, Wen Li-Wei. First-principles study of magnetism and electronic structureof Sb-containing half-Heusler alloys. Acta Physica Sinica,
2011, 60(4): 047110.
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Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai. Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica,
2011, 60(9): 098108.
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Zhang Guo-Ying, Yang Li-Na, Zhang Hui, Wu Jian-Jun. The study of the influence mechanism of platinum group and transition metals on the passivation of Ti alloys. Acta Physica Sinica,
2010, 59(3): 2022-2026.
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Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou. Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica,
2009, 58(10): 7211-7215.
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Liu Gui-Li. Electronic theoretical study on the corrosion and passivation mechanism of Ti metal. Acta Physica Sinica,
2008, 57(7): 4441-4445.
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Zhang Guo-Ying, Zhang Hui, Liu Yan-Xia, Yang Li-Na. The electronic theory study of the influence of Pd on the passivation of Ti alloys. Acta Physica Sinica,
2008, 57(4): 2404-2408.
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Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin. Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica,
2005, 54(7): 3357-3362.
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Xie Chang-Kun, Xu Fa-Qiang, Deng Rui, Xu Peng-Shou, Liu Feng-Qin, K.Yibulaxin. . Acta Physica Sinica,
2002, 51(11): 2606-2611.
doi: 10.7498/aps.51.2606
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