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The ambipolar transporting characteristic is one of the most important factors that prevent the performance of Carbon Nanotube Field Effect Transistors (CNFETs) from further being improved. In order to reduce the ambipolar conductance and increase the ON-OFF current ratio of the device,a stair-case doping strategy in drain lead,which is suitable for not only the Conventional MOS-like CNFETs (C-CNFETs) but also Tunneling CNFET (T-CNFETs),is proposed in this paper. The non-equilibrium Greens function based simulation results show that this strategy can reduce the ambipolar conductance and increase the ON-OFF current ratio of the device effectively. Further study shows that many differences exist with using this stair-case doping strategy applied in C-CNFETs and T-CNFETs. First,the potential band pinning in stair-case doped C-CNFETs would weaken the ON-state performance of the device,while no band pinning exists in stair-case doped T-CNFETs. Second,applying such a stair-case doping strategy to both source and drain leads can further increase the device performances in C-CNFETs but not T-CNFEts. Third,the transporte property of T-CNFETs is dependent more strongly on the width of lightly doped drain region than that of C-CNFETs. However,certain device area would be costly because of using this stair-case doping strategy. So,much attention should be paid to the choice of device structure,doping concentration and lightly doped drain region width,to obtain a best tradeoff among speed,power and device area,in application.
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Keywords:
- stair-case doping /
- band-to-band-tunneling /
- ambipolar conductance /
- CNFETs
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[1] Zhang Z X,Hou S M,Zhao X Y,Zhang J,Sun J P,Liu W M,Xue Z Q,Shi Z J,Gu Z N 2002 Acta Phys. Sin. 51 434 (in Chinese) [张兆祥、侯士敏、赵兴钰、张 浩、孙建平、刘惟敏、薛增泉、施祖进、顾镇南 2002 物理学报 51 434]
[2] Tang N S,Yan X H,Ding J H 2004 Acta Phys. Sin. 53 333 (in Chinese) [唐娜斯、颜晓红、丁建文 2004 物理学报 53 333 ]
[3] Li J P,Zhang W J,Zhang Q F,Wu J L 2007 Acta Phys. Sin. 56 1054 (in Chinese) [李剑萍、张文静、张琦锋、吴锦雷 2007 物理学报 56 1054]
[4] Javey A,Guo J,Wang Q,Lundstron M,Dai H 2003 Lett. to Nature 424 654
[5] Heinze S,Tersoff J,Martel R,Derycke V,Appenzeller J,Avouris Ph 2002 Phys. Rev. Lett. 89 106801
[6] Chen J,Klinke C,Afzali A,Avouris Ph 2005 Appl. Phys. Lett. 86 123108
[7] Lin Y M,Appenzeller J,Knoch J,Avouris Ph 2005 IEEE Trans. Nano. 4 481
[8] Pourfath M,Ungersboeck E,Gehring A,Kosina H 2005 J.Comput Electron 4 75
[9] Hassaninia I,Sheikhi M H,Kordrostami Z 2008 Solid-State Electronics 52 980
[10] Pourfath M,Kosina H,Selberherr S 2007 J. Comput Electron 6 243
[11] Chen Z H,Farmer D,Xu S,Gordon R,Avouris P,Appenzeller J 2008 IEEE Trans. Device Letters 29 183
[12] Nosho Y,Ohno Y,Kishimoto S,Mizutani T 2006 International Microprocess and Nanotechnology Conference Kamakura city of Japan 2006 Oct p247
[13] Javey A,Tu R,Farmer D,Guo J,Gordon D,Dai H 2005 Nano Lett. 5 345
[14] Lee R S,Kim H J,Fischer J E,Thess A,Smalley R E 1997 Nature 388 255
[15] Takenobu T,Kanbara T,Akima N,Takahashi T,Shiraishi M,Tsukagoshi K,Kataura H,Aoyagi Y,Iwasa Y 2005 Advanced Materials 17 2430
[16] Rao A M,Eklund P C,Bandow S,Thess A,Smalley R E 1997 Nature 388 257
[17] Afzali A,Phaedon A,Jia C,Christian K,Paul M US 2007 Patent 7253431
[18] Fan X,Dickey E C,Eklund P C,Williams K A,Grigorian L,Buczko R 2000 Phys. Rev. Lett. 84 4621
[19] Zhou C,Kong J,Yenilmez E,Dai H 2000 Science 290 1552
[20] Knoch J,Appenzeller J,2008,Phys. Stat. Sol. 205 679
[21] Knoch J,Mantl S,Appenzeller J 2007 Solid-State Electronics 51 572
[22] Duclaux L 2002 Carbon 40 1751
[23] Luryi S 1988 Appl. Phys. Lett. 52 501
[24] Zhou H L,Zhang M X,Hao Y 2009 IEEE INEC,HongKong China 2009 p56
[25] Venugopal R,Ren Z,Datta S,Lundstrom M S,Jovanovic D 2002 J. Appl. Phys. 92 3730
[26] Fiori G,Iannaccone G,Klimeck G 2007 IEEE Trans. Electron Device 6 475
[27] Guo J,Ali J,Dai h J,Mark L 2004 IEDM Tech Digest San Francisco,Dec,2004 p703—706
[28] Tong J N,Zou X C,Shen X B 2004,Chin. Phys. 13 1815
[29] Appenzeller J,Lin Y M,Knoch J,Chen Z H,Avouris P 2005 IEEE Trans. Electron Device 52 2568
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