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A highly efficient light-trapping structure consisting of a diffractive grating, a MgF2 film, a ZnS film and Ag reflector, is used for a-Si:H solar cell. Using the rigorous coupled wave theory, the weighted absorptance photon number (AM1.5) of a 1 m thick a-Si:H solar cell is calculated in a wavelength range from 400 to 1000 nm for the AM1.5 solar spectrum at 25 ℃. It is used to design the optimal parameters of the light-trapping structure. Results indicate that AM1.5 of the solar cell can reach 74.3%, if the period, the depth and the duty cycle of the diffractive grating, and the height of the MgF2 film and the ZnS film are 800 nm, 160 nm, 0.6125, 90 nm and 55 nm, respectively. If a ZnS/Ag film is fabricated on the rear surface of the solar cell, a larger AM1.5 (76.95%) can be obtained. It is demonstrated that the trapping structure is useful for elevating the efficiency of the solar cell.
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Keywords:
- light-trapping structure /
- diffractive grating /
- antireflective film /
- amorphous silicon solar cells
[1] Shah A, Torres P, Tscharner R, Wyrsch N, Keppner H 1999 Science 285 692
[2] [3] Saha J K, Haruta K, Koabayshi Y, Shirai T 2009 Sol. Energy Mater. Sol. Cells 93 1154
[4] Han X Y, Hou G F, Wei C C, Zhang X D, Dai Z H, Li G J, Sun J, Chen X L, Zhang D K, Xue J M, Zhao Y, Geng X H 2009 Acta Phys. Sin. 58 4254 (in Chinese) [韩晓艳、侯国付、魏长春、张晓丹、戴志华、李贵君、孙 建、陈新亮、张德坤、薛俊明、赵 颖、耿新华 2009 物理学报 58 4254]
[5] [6] [7] Kuo M L, Poxson D J, Kim Y S, Mont F M, Kim J K, Schubert E F, Lin S Y 2008 Opt. Lett. 33 2527
[8] Kong W J, Shen Z C, Wang S H, Shao J D, Fan Z X, Lu C J 2010 Chin. Phys. B 19 044210
[9] [10] Yu Z N, Gao H, Wu W, Ge H X, Chou S Y 2003 J. Vac. Sci. Technol. B 21 2874
[11] [12] [13] Sai H, Kanamori Y, Arafune K, Ohshitta Y, Yamaguch M 2007 Prog. Photovolt. Res. Appl. 15 415
[14] [15] Senoussaou N, Krause M, Muller J, Bunte E, Brammer T, Stiebig H 2004 Thin Solid Films 451452 397
[16] [17] Stiebig H, Haase C, Haase C, Zahren C, Zahren C, Rech B, Senoussaoui N 2006 J. Non-Cryst. Solids 352 1949
[18] [19] Sai H, Fujiwara H, Kondo M 2009 Sol. Energy Mater. Sol. Cells 93 1087
[20] [21] Yang K H, Yang J Y 2009 Solar Energy 83 2050
[22] Wang X D, Liao Y L, Liu B, Ge L J, Li G H, Fu S J, Chen Y F, Cui Z 2008 Microelectron. Eng. 85 910
[23] [24] Ahn S W, Lee K D, Kim J S, Kim S H, Lee S H, Park J D, Yoon P W 2005 Microeletron. Eng. 7879 314
[25] [26] [27] Gran E B, Moharam M G 1996 Appl. Opt. 35 795
[28] [29] Kim H J, Depauw V, Agostinelli G, Beaucarne G, Poortmans J 2006 Thin Solid Films 511512 411
[30] [31] Zhao L, Zuo Y H, Zhou C L, Lia H L, Diao H W, Wang W G 2009 Solar Energy 84 110
[32] Feng N N, Michel J, Zeng L, Liu J F, Hong C Y, Kimerling L C 2007 Proceedings of the 5th World Conference on Transactions on Electron Devices (Washington: IEEE) pp19261932
[33] [34] [35] Kong W J, Yun M J, Sun X, Liu J H, Fan Z X, Shao J D 2008 Acta Phys. Sin. 57 4904 (in Chinese) [孔伟金、云茂金、孙 欣、刘均海、范正修、邵建达 2008 物理学报 57 4904]
[36] Sahoo K C, Li Y M, Chang E Y 2009 Comput. Phys. Commun. 180 1721
[37] -
[1] Shah A, Torres P, Tscharner R, Wyrsch N, Keppner H 1999 Science 285 692
[2] [3] Saha J K, Haruta K, Koabayshi Y, Shirai T 2009 Sol. Energy Mater. Sol. Cells 93 1154
[4] Han X Y, Hou G F, Wei C C, Zhang X D, Dai Z H, Li G J, Sun J, Chen X L, Zhang D K, Xue J M, Zhao Y, Geng X H 2009 Acta Phys. Sin. 58 4254 (in Chinese) [韩晓艳、侯国付、魏长春、张晓丹、戴志华、李贵君、孙 建、陈新亮、张德坤、薛俊明、赵 颖、耿新华 2009 物理学报 58 4254]
[5] [6] [7] Kuo M L, Poxson D J, Kim Y S, Mont F M, Kim J K, Schubert E F, Lin S Y 2008 Opt. Lett. 33 2527
[8] Kong W J, Shen Z C, Wang S H, Shao J D, Fan Z X, Lu C J 2010 Chin. Phys. B 19 044210
[9] [10] Yu Z N, Gao H, Wu W, Ge H X, Chou S Y 2003 J. Vac. Sci. Technol. B 21 2874
[11] [12] [13] Sai H, Kanamori Y, Arafune K, Ohshitta Y, Yamaguch M 2007 Prog. Photovolt. Res. Appl. 15 415
[14] [15] Senoussaou N, Krause M, Muller J, Bunte E, Brammer T, Stiebig H 2004 Thin Solid Films 451452 397
[16] [17] Stiebig H, Haase C, Haase C, Zahren C, Zahren C, Rech B, Senoussaoui N 2006 J. Non-Cryst. Solids 352 1949
[18] [19] Sai H, Fujiwara H, Kondo M 2009 Sol. Energy Mater. Sol. Cells 93 1087
[20] [21] Yang K H, Yang J Y 2009 Solar Energy 83 2050
[22] Wang X D, Liao Y L, Liu B, Ge L J, Li G H, Fu S J, Chen Y F, Cui Z 2008 Microelectron. Eng. 85 910
[23] [24] Ahn S W, Lee K D, Kim J S, Kim S H, Lee S H, Park J D, Yoon P W 2005 Microeletron. Eng. 7879 314
[25] [26] [27] Gran E B, Moharam M G 1996 Appl. Opt. 35 795
[28] [29] Kim H J, Depauw V, Agostinelli G, Beaucarne G, Poortmans J 2006 Thin Solid Films 511512 411
[30] [31] Zhao L, Zuo Y H, Zhou C L, Lia H L, Diao H W, Wang W G 2009 Solar Energy 84 110
[32] Feng N N, Michel J, Zeng L, Liu J F, Hong C Y, Kimerling L C 2007 Proceedings of the 5th World Conference on Transactions on Electron Devices (Washington: IEEE) pp19261932
[33] [34] [35] Kong W J, Yun M J, Sun X, Liu J H, Fan Z X, Shao J D 2008 Acta Phys. Sin. 57 4904 (in Chinese) [孔伟金、云茂金、孙 欣、刘均海、范正修、邵建达 2008 物理学报 57 4904]
[36] Sahoo K C, Li Y M, Chang E Y 2009 Comput. Phys. Commun. 180 1721
[37]
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