Improving the light-soaking stability of a-Si: H/μc-Si: H tandem solar cells

Hou Guo-Fu; Lu Peng; Han Xiao-Yan; Li Gui-Jun; Wei Chang-Chun; Geng Xin-Hua; Zhao Ying

doi:10.7498/aps.61.138401

Abstract

Improving the light-soaking stability of silicon-based thin film solar cells is a very important issue for industrial production. In order to obtain high-efficiency a-Si:H/μc-Si:H tandem solar cells with good light-soaking stability, In this paper we first present the results about a-Si:H top solar cell with high light-soaking stability. Then we mainly investigate the influences of N/P tunnel junction and silane concentration (SC) profiling of μc-Si:H i-layer on the light-soaking stability of a-Si:H/μc-Si:H tandem solar cells. Up to now we have been able to obtain a-Si:H/μc-Si:H tandem solar cell with a light-soaking degradation ratio of only 7%.

Keywords:

Authors and contacts

1.
Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education (Nankai University), Tianjin 300071, China
Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, 2011CBA00707), the National High Technology Research and Development Program of China (Grant No. 20011AA050503), the National Natural Science Foundation of China (Grant No. 61176060), the Key Project of Natural Science Foundation of Tianjin (Grant No. 12JCZDJC28300), and the Open Project of Jiangsu Key Laboratory for Design and Manufacture of Mico-Nano Biomedicak Instruments (Grant No. JSNBI201001).

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Cited By

[1]	Staebler D L, Wronski C R 1977 Appl. Phys. Lett. 31 292
[2]	Finger F, Carius R, Dylla T, Klein S, Okur S, Günes M 2005 Journal of Optoelectronics and Advanced Materials 7 83
[3]	Wang Y 2007 Ph. D. Dissertation (Tianjin: Nankai University) (in Chinese) [王岩 2007 博士学位论文 (天津: 南开大学)]
[4]	Yan B J, Yue G Z, Yang J, Banerjee A, Guha S 2003 Mat. Res. Soc. Symp. Proc. 762 A4.1.1
[5]	Xue J M, Ren H Z, Sun J, Guo Q C, Wang Y, Zhang D K, Han X Y, Hou G F, Geng X H 2005 Proceedings of the 15th International Photovoltaic Science & Engineering Conference (PVSEC-15) Shanghai China, Oct 11-14, 2005 p646
[6]	Wang Y, Han X Y, Ren H Z, Hou G F, Guo Q C, Zhu F, Zhang D K, Sun J, Xue J M, Zhao Y, Geng X H 2006 Acta Phys. Sin. 55 947 (in Chinese) 王岩, 韩晓艳, 任慧志, 侯国付, 郭群超, 朱锋, 张德坤, 孙建, 薛俊明, 赵颖, 耿新华 2006 物理学报 55 947
[7]	Li G J, Hou G F, Han X Y, Yuan Y J, Wei C C, Sun J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 1674
[8]	Yan B J, Yue G Z, Yang J, Gu H S, Williamson D L, Han D X, Jiang C S 2004 Appl. Phys. Lett. 85 1955
[9]	Yue Guo Z, Yan B J, Ganguly G, Yang J, Gu H S, Teplin C W 2006 Appl. Phys. Lett. 88 263507

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Vol. 61, Issue 13 - 2012-07-05

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