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单结太阳电池的能量转换效率受限于Shockley-Queisser理论极限, 而突破该极限的最有效策略是构建多结叠层太阳电池. 多结叠层太阳电池通过堆叠多个子电池, 可针对太阳光谱的特定部分进行优化. 钙钛矿材料具有连续可调的能带结构, 为多结叠层电池中的吸光材料组合提供了新的选项. 在钙钛矿基叠层太阳电池领域, 三结叠层太阳电池已经取得了一定进展, 在光伏产业中展现出巨大潜力. 本文首先重点介绍了三结叠层太阳能器件结构及面临的科学问题, 然后介绍了钙钛矿基三结叠层电池的研究进展, 包括钙钛矿/钙钛矿/硅叠层电池、钙钛矿/钙钛矿/有机叠层电池和全钙钛矿叠层电池. 最后, 本文分析了进一步提升三结叠层太阳电池性能的研究方向, 为制备高效三结电池提供了指导.The energy conversion efficiency of single-junction solar cells is limited by the Shockley-Queisser theory and the most effective strategy to break through this limit is to fabricate multi-junction tandem solar cells. Perovskite materials provide a continuously tunable energy band structure, offering a new option for light-absorbing materials in multi-junction tandem cells. In the field of perovskite-based multi-junction tandem solar cells, triple-junction tandem solar cells have demonstrated great potential. The present paper introduces the configuration of triple-junction solar cells and its facing three scientific challenges. 1) Ensuring energy level alignment among sub-cells is a critical concern for three-junction batteries. Specifically, the top wide-band gap sub-cell must possess a band gap ranging from 1.8 to 2.2 eV; however, current perovskite material systems with wide-band gaps exhibit certain defects. 2) It is essential to achieve current matching in multi-junction tandem solar cells while optimizing the absorption layer and minimizing parasitic absorption in order to maximize the current output of solar cells. 3) The functional layers of multi-junction tandem solar cells are stacked sequentially using different deposition methods, which imposes higher compatibility requirements on the intermediate interconnect layers. Subsequently, the research progress of perovskite-based triple-junction tandem solar cells is introduced, including perovskite/perovskite/silicon tandem solar cells, perovskite/perovskite/organic tandem solar cells, and all-perovskite tandem solar cells. Their respective highest efficiencies are 19.4%, 23.87%, and 27.1%. Finally, this paper explores the research directions for further improving the performance of triple-junction solar cells. In addition to improving energy conversion efficiency, perovskite-based solar cells must also solve the stability problems in order to achieve future commercialization, and provide guidance for the development of efficient triple-junction cells.
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Keywords:
- tandem /
- solar cells /
- wide-band gap perovskite /
- photoinduced phase separation
1. 引 言
光学频率梳(optical frequency comb, OFC)由一组等间距的离散频率成分组成[1]. 由于具有稳定性良好、频率间隔均匀、相干性高等优点, OFC被广泛应用于计量学[2,3]、任意波形产生[4,5]、光谱学[6,7]、光通信[8,9]、太赫兹波产生[10,11]等领域. 目前, 获取OFC的方式主要有锁模[12,13]、外部调制[14,15]、电流调制[16-19]等. 其中, 基于电流调制半导体激光器获取OFC实验系统简单, 易于操作, 并且能够获取梳线间距灵活可调、稳定性良好的OFC, 因此, 基于电流调制半导体激光器获取OFC倍受青睐.
垂直腔面发射激光器(vertical-cavity surface-emitting laser, VCSEL)是一种典型的半导体激光器, 具有制造成本低、阈值电流低、光纤耦合效率高、易于集成等特点, 在很多领域有着广泛应用[20,21]. 尤其是VCSEL的增益有源区或激光腔中存在微弱的各向异性, 从而导致其输出包含两个正交的偏振分量[22,23], 在一定条件下可同时输出两个偏振方向正交的OFC, 为偏振敏感传感[24]和偏振分频复用光通信[25]的多载波光源提供了应用前景. 目前, 基于电流调制VCSEL获取OFC已有相关理论和实验的研究报道. 2015年, Prior等[26]实验证明了电流调制VCSEL可以同时输出两个偏振方向正交的OFC, 并可叠加为一个宽带OFC. 次年, 该课题组[27]在系统中进一步引入光注入提升OFC的带宽. 2018年, Quirce等[28]理论研究了电流调制VCSEL产生OFC的性能. 同年, 该课题组[29]在系统中引入光注入, 进一步理论研究注入光的功率、位置、偏振对OFC性能的影响. 2020年, 本课题组[30]实验研究了注入功率和波长对光注入电流调制VCSEL产生OFC性能的影响, 实验获取了带宽约为70 GHz的OFC. 需要指出的是, 上述基于电流调制VCSEL获取OFC的方案中, 都采用了正弦信号进行电流调制, 但正弦信号因其单一的频率成分无法在较低的调制频率(≤ 1 GHz)下获取平坦且宽带的OFC[31]. 2019年, Rosado等采用脉冲信号对光注入下离散模式激光器进行调制, 当调制频率为0.5 GHz时, 获取了带宽约为54 GHz, 载噪比(carrier to noise ratio, CNR)为37 dB的OFC[32]. 但目前, 基于光注入下脉冲电流调制VCSEL获取OFC, 以及调制参数对OFC性能影响的研究尚未见报道.
因此, 本文提出一种基于光注入下脉冲电流调制1550 nm-VCSEL获取宽带可调谐OFC的实验方案. 主要研究注入波长、调制频率、脉冲宽度对OFC带宽和CNR的影响. 实验结果表明, 注入波长、调制频率、脉冲宽度对OFC性能有显著影响, 在不同调制频率和匹配的注入波长下, 优化脉冲宽度, 可获得宽带可调谐的OFC.
2. 实验系统
图1是实验系统结构示意图. 可调谐激光器(TL, Santec TSL-710)输出的光通过可变衰减器(VA)、偏振控制器(PC)、20/80光纤耦合器(FC1)后被分成两部分, 其中20%进入光功率计(PM)监测注入功率的大小, 80%通过光环形器(OC)后注入到1550 nm-VCSEL(Raycan)中. VCSEL的温度和偏置电流(Ibias)由高精度低噪声电流-温度控制器(ILX-Lightwave, LDC-3908)控制, 且一个任意波形发生器(AWG, Tektronix, AWG70001A, 1.5 KSa/s—50 GSa/s)产生的高斯脉冲电信号通过电放大器(EA)放大后对VCSEL进行调制. VCSEL的输出通过OC、光纤起偏器(OFP, Opeak OM-POL-GN)、掺铒光纤放大器(EDFA)、50/50光纤耦合器(FC2)后被分成两个部分, 其中一部分进入光谱分析仪(OSA, Aragon Photonics BOSA lite +, 分辨率为20 MHz)进行光谱测定; 另一部分被一个50/50光纤耦合器(FC3)再分为两部分, 一部分进入光电探测器(PD1, U2T-XPDV2150R, 带宽为50 GHz)转换成电信号, 然后用频谱分析仪(ESA, R&S FSW, 带宽为67.0 GHz)进行频谱分析; 另一部分进入另一个光电探测器(PD2, New Focus 1544B, 带宽为12.0 GHz)转换成电信号, 然后由数字实时示波器(DSO, Agilent X91604A, 带宽为16.0 GHz)记录时间序列. 其中VA用于调节注入功率Pi的大小, PC用于调节注入光的偏振, OFP用于选择VCSEL输出光的偏振方向, EDFA用于放大光功率. 在实验过程中, 1550 nm-VCSEL的温度保持在20.10 ℃.
图 1 实验系统结构图. TL-可调谐激光器; VA-可变衰减器; PC-偏振控制器; FC-光纤耦合器; PM-光功率计; OC-光环形器; AWG-任意波形发生器; EA-电放大器; DC-直流电源; VCSEL-垂直腔面发射激光器; OFP-光纤起偏器; EDFA-掺铒光纤放大器; PD-光电探测器; ESA-频谱分析仪; DSO-数字实时示波器; OSA-光谱分析仪. 实线-光路; 虚线-电路Fig. 1. Schematic diagram of the experimental system: TL-tunable laser; VA-variable attenuator; PC-polarization controller; FC-fiber coupler; PM-power meter; OC-optical circulator; AWG-arbitrary waveform generator; EA-electric amplifier; DC-direct current; VCSEL-vertical-cavity surface-emitting laser; OFP-optical fiber polarizer; EDFA-erbium-doped fiber amplifier; PD-photo-detector; ESA-spectrum analyzer; DSO-digital storage oscilloscope; OSA-optical spectrum analyzer. Solid line-optical path; dashed line-electronic path.3. 实验结果与讨论
图2(a)是自由运行1550 nm-VCSEL的输出功率随电流的变化曲线(P-I曲线), 图中Y偏振分量(Y polarization component, Y-PC)和X偏振分量(X polarization component, X-PC)分别用实线和点线表示. 从图2(a)中可知, VCSEL的阈值电流Ith约为1.7 mA, 偏振开关电流约为6.6 mA. 当Ibias超过Ith时, Y-PC激射, X-PC被抑制; 当Ibias高于6.6 mA, 激射的偏振分量切换为X-PC, 此时X-PC激射, 而Y-PC被抑制. 图2(b)和(c)分别显示了Ibias = 6.4 mA和Ibias = 6.8 mA时, 自由运行VCSEL输出的光谱. 图2(b)中, 光谱在1552.612 nm和1552.870 nm处出现两个峰, 分别对应Y-PC和X-PC, 且Y-PC功率远高于X-PC, 此时Y-PC为主激射的偏振分量; 图2(c)中X-PC功率明显高于Y-PC, X-PC为主激射的偏振分量.两个偏振分量波长(频率)间隔约为0.258 nm (32.2 GHz). 需要说明的是, 在后续实验中使用正向脉冲电信号(调制电压Vm = 10.5 V)调制1550 nm-VCSEL, 为了实现增益开关, 实验中设置Ibias = 1.5 mA, 略低于VCSEL的Ith.
首先, 研究在特定调制参数和注入参数下1550 nm-VCSEL的输出特性. 图3(a1)给出了由AWG产生经过EA放大后对1550 nm-VCSEL进行脉冲电流调制的波形. 此时, 脉冲的调制频率fm = 0.5 GHz、峰值电压为Vm = 10.5 V. 为了更清晰地显示脉冲形状, 图3(a2)给出了一个周期(2 ns)的脉冲波形. 在本文中, 我们采用半极大全宽表征调制脉冲信号宽度(τelec), 此时τelec = 200 ps. 图3(b1)和(b2)分别是在图3(a1)所示的脉冲电流调制下1550 nm-VCSEL输出的时间序列和光谱. 从图中可以看出, 其时间序列为等间隔、峰值功率随机变化的脉冲, 脉冲间隔为2 ns ( = 1/fm). 光谱为无明显梳状线的宽噪声谱, 且噪声谱宽度与自由运行1550 nm-VCSEL的两个偏振分量波长间隔相关[29]. 这样的光谱结构是因为每一个脉冲的建立都是源于自发辐射, 后续脉冲与前序脉冲之间无固定的相位关系[33]. 进一步引入光注入, 当注入波长λi = 1551.8570 nm, 注入功率Pi = 18.82 µW时, 1550 nm-VCSEL输出的时间序列和光谱如图3(c1)和3(c2)所示. 引入光注入后, 输出时间序列仍为等间隔的脉冲, 但此时脉冲的峰值功率稳定. 在本文中, OFC的性能通过带宽和载噪比(CNR)来表征. 其中, 带宽定义为从光谱的最大值下降10 dB所包含的频率范围, 而CNR定义为光谱梳状线功率(以dB为单位)的最大值与相邻的最小值之差[29]. 根据上述定义, 此时引入光注入后可产生宽带OFC, 带宽约为82.5 GHz (166根梳状线), CNR约为35 dB. 光注入使每一个脉冲的建立主要源于注入光场, 从而使前后脉冲之间具有相位关联性, 使1550 nm-VCSEL输出优质的OFC[33].
图 3 AWG产生的脉冲调制信号在不同时间窗口的波形 (a1)—(a2), 脉冲电流调制下的VCSEL输出的时间序列 (b1) 和光谱 (b2), 以及进一步引入光注入 (λi = 1551.8570 nm, Pi = 18.82 µW) 后VCSEL输出的时间序列(c1)和光谱(c2)Fig. 3. Pulsed waveforms in different time windows generated by AWG (a1)–(a2), time series (b1) and optical spectrum (b2) of pulsed current-modulated VCSEL, time series (c1) and optical spectrum (c2) of pulsed current-modulated VCSEL under optical injection with Pi = 18.82 µW and λi = 1551.8570.图4显示光注入下脉冲电流调制1550 nm-VCSEL输出OFC的带宽和CNR随注入波长的变化趋势. 其中注入波长的变化步长设置为0.02 nm. 由图4(a)可知, 当λi < 1551.5770 nm或λi > 1552.2770 nm时, 注入波长在噪声谱外, 不能产生OFC; 当1551.5770 nm ≤ λi ≤ 1552.2770 nm, 可以获得宽带的OFC, OFC带宽超过38 GHz. 特别是当注入波长在1551.8470 nm ≤ λi ≤ 1551.8670 nm之间时, Y-PC和X-PC周围均激发出功率均衡的梳状线, 此外可以获得带宽达82.5 GHz的宽带OFC. 在图4(b)中, 随着注入波长的增大, CNR从0 dB开始, 先增大, 然后稳定在较高的水平, 然后减小. 这是因为当注入波长在噪声谱外, VCSEL不能输出梳状线, 此时CNR为0 dB. 当注入波长在噪声谱两端时, 光注入激发VCSEL输出梳状线, 但此时OFC的功率较小, CNR较低. 当注入波长在1551.6770 nm < λi < 1552.1570 nm时, 注入波长在噪声谱的中心区域附近, 此时噪声谱被有效抑制, VCSEL输出功率均衡的OFC, 此时CNR保持在较高的水平, 在33—36 dB之间波动. 因此, 实验结果表明: 注入波长是影响OFC性能的一个重要因素, 这是因为注入波长的变化会导致VCSEL中两个偏振分量的相对强弱的改变[30]. 因此, 选择合适的注入波长, 可以获得大带宽、高CNR的OFC.
图 4 Pi = 18.82 µW, Vm = 10.5 V, fm = 0.5 GHz, τelec = 200 ps时, 随着λi增大, 光注入下脉冲电流调制VCSEL输出OFC带宽 (a) 和CNR (b) 的变化趋势.Fig. 4. Evolution of the bandwidth (a) and CNR (b) as a function of the injection light wavelength for the pulsed current modulation VCSEL at Pi = 18.82 µW, Vm = 10.5 V, fm = 0.5 GHz, τelec = 200 ps.高质量的OFC除了具有大带宽和高CNR外, 还应具有高度相干和稳定的梳状线. 图5显示中心频率为0.5 GHz ( = fm) 的电信号的功率谱(图5(a))和单边带(single sideband, SSB)相位噪声(图5(b)). 如图所示, 该信号的3 dB线宽低于1 Hz(图5(a)), SSB相位噪声约为–123.3 dBc/Hz @ 10 kHz (图5(b)). 这表明基于光注入下脉冲电流调制1550 nm-VCSEL能够输出高度相干和稳定的梳状线.
接下来研究调制频率对OFC性能的影响. 图6是Pi = 18.82 µW, τelec = 125 ps时, 光注入脉冲电流调制VCSEL在不同fm下输出的光谱. 需要注意的是, 调制频率的变化会引起噪声谱包络的移动[30], 因此需要选择匹配的注入波长, 使光注入电流调制VCSE输出OFC. 如图6(a)所示, fm = 0.25 GHz, λi = 1551.3087 nm时, X-PC和Y-PC偏振分量产生的OFC相互分离, 此时OFC带宽较小, 带宽约为39 GHz (157根梳状线), CNR约为31 dB. 如图6(b)—(e)所示, 当fm为0.5 GHz, 0.75 GHz, 1.5 GHz, 2.0 GHz时, 对应的λi = 1551.7495 nm, 1551.8053 nm, 1552.5577 nm, 1551.7470 nm时, X-PC和Y-PC产生的梳状线可以连接成宽带OFC, 带宽约为73.0 GHz (147根梳状线)、69 GHz (93根梳状线)、57.0 GHz (39根梳状线)、54 GHz (28根梳状线); CNR约为35 dB, 38 dB, 43 dB, 45 dB. 进一步增大调制频率, 当fm = 3.0 GHz, λi = 1552.1287 nm时, 如图6(f)所示, 过高的调制频率使OFC功率不均匀, 带宽降低至15.0 GHz (6根梳状线), CNR约为47 dB.
图7给出了OFC带宽和CNR随fm增大的变化趋势. 在图7(a)中, 随着fm的增大, OFC的带宽呈现先增大后减小的变化趋势. 当0.25 GHz < fm ≤ 2.5 GHz时, 两个偏振分量输出的梳状线功率比较均衡, 连接成宽带OFC, OFC带宽在40 GHz以上. 在图7(b)中, 随着fm的增大, CNR呈现先快速上升, 再趋于平缓的趋势. 当0.25 GHz < fm时, 均可获得高CNR的OFC, CNR大于35 dB.
研究τelec对OFC带宽和CNR的影响. 图8给出了OFC带宽和CNR随τelec增大的变化趋势. 如图8(a)所示, 随着τelec的增大, OFC带宽呈现先增大后减小的变化趋势. 当τelec < 62.5 ps时, 较小的调制脉宽不能提供足够的调制能量, 此时两个偏振分量产生的梳状线功率差距较大, VCSEL不能输出平坦且宽带的OFC. 当62.5 ps ≤ τelec ≤ 250 ps, 适当的调制脉宽和调制能量使得VCSEL输出功率均衡的宽带OFC, OFC带宽在48 GHz以上. 特别是在175 ps ≤ τelec ≤ 250 ps的脉宽范围内, OFC带宽可以超过80 GHz. 继续增大τelec, 当τelec > 250 ps时, 较大的调制脉宽带来了较多的调制能量, 这些较强的调制能量很难均匀分布在OFC的各个梳状线上, 这导致OFC的梳状线不均衡, 带宽逐渐减少. 如图8(b)所示, τelec的变化对CNR的影响较小, CNR在35—38 dB之间波动. 因此, 实验结果表明, τelec的变化对OFC的带宽影响较大, 对CNR的影响较小. 选择合适的τelec, 可以获得宽带、高CNR的OFC.
上文研究了固定τelec = 125 ps, 不同fm下, 光注入脉冲电流调制VCSEL输出OFC的性能. 事实上, 通过优化τelec, 可以进一步提升不同fm下的OFC带宽. 图9显示Pi = 18.82 µW, Vm = 10.5 V时, 光注入脉冲电流调制VCSEL在不同fm下, 选择优化的τelec时输出的光谱. 需要注意的是: 图9中的OFC, 同样需要选择匹配的注入波长. 在图9(a)—(f)中, 当(fm, λi) = (0.25 GHz, 1551.8037 nm), (0.5 GHz, 1551.8570 nm), (0.75 GHz, 1552.4902 nm), (1.5 GHz, 1553.7906 nm), (2.0 GHz, 1553.9384 nm), (3.0 GHz, 1553.0364 nm)时, 选择优化的τelec为100 ps, 200 ps, 150 ps, 175 ps, 200 ps, 162.5 ps时, 获取的OFC带宽分别为72.25 GHz (289根梳状线)、82.5 GHz (166根梳状线)、74.25 GHz (100根梳状线)、70.5 GHz (48根梳状线)、64.0 GHz (33根梳状线)、63.0 GHz (22根梳状线), CNR分别为31 dB, 35 dB, 38 dB, 45 dB, 47 dB, 49 dB. 将以上实验结果和图6进行对比可以发现, 相同的调制频率, 优化脉冲宽度, OFC带宽分别增大了32.75 GHz, 9.5 GHz, 5.25 GHz, 13.5 GHz, 10 GHz, 48 GHz. 因此, 在不同的fm下, 通过优化的τelec, 可以通过本文提出的实验系统获取宽带可调谐OFC. 另外, 实验结果还表明: 在优化的参数条件下所获得的OFC比较稳定, 梳线功率抖动较小(小于1 dB).
4. 结 论
本文提出了一种基于光注入下脉冲电流调制1550 nm-VCSEL获取宽带可调谐OFC的实验方案. 在该方案中, 采用脉冲信号调制激光器, 使其输出的光谱呈现无明显梳状线的宽噪声谱; 进一步引入光注入获取宽带可调谐OFC. 在调制频率fm = 0.5 GHz, 脉冲宽度τelec = 200 ps, 注入波长λi = 1551.8570 nm时, 获取带宽约为82.5 GHz, CNR约为35 dB的宽带OFC, 对应的SSB相位噪声低至–123.3 dBc/Hz @ 10 kHz. 并且, 我们系统地研究了注入波长, 调制频率, 脉冲宽度对OFC性能的影响. 实验结果表明, 给定调制频率和脉冲宽度, 注入波长在1551.8470 nm ≤ λi ≤ 1551.8670 nm之间时, 可以获得带宽达82.5 GHz, CNR为35 dB的宽带OFC. 给定脉冲宽度和适当的注入波长, 调制频率当0.25 GHz < fm ≤ 2.5 GHz时, OFC带宽在40 GHz以上, CNR在35 dB以上. 给定调制频率和适当的注入波长, 脉冲宽度在175 ps ≤ τelec ≤ 250 ps的脉宽范围内, 可以获得带宽超过80 GHz的OFC, CNR在35 dB以上.
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图 2 (a) 全钙钛矿叠层太阳电池的最大实际PCE为36.6%时的EQE曲线[6]; (b) 全钙钛矿叠层太阳电池的最大实际PCE为36.6%时的J-V曲线[6]; (c) 钙钛矿/钙钛矿/硅叠层太阳电池的最大实际PCE为38.8%时的EQE曲线[6]; (d) 钙钛矿/钙钛矿/硅叠层太阳电池的最大实际PCE为38.8%时的J-V曲线[6]
Fig. 2. (a) EQE curves for an all-perovskite tandem solar cell with a maximum practical PCE of 36.6%[6]; (b) J-V curves for an all-perovskite tandem solar cell with a maximum practical PCE of 36.6%[6]; (c) EQE curves for a perovskite/perovskite/silicon solar cell with a maximum practical PCE of 38.8%[6]; (d) J-V curves for a perovskite/perovskite/silicon solar cell with a maximum practical PCE of 38.8%[6].
图 3 (a) 叠层太阳电池结构及横截面SEM图像[74]; (b) 子电池及叠层太阳电池J-V曲线[75]; (c) 全钙钛矿叠层太阳电池结构[77]; (d) 叠层太阳电池在暗态和光照下的J-V曲线[76]; (e) 钙钛矿前驱体结晶过程示意图[79]; (f) 钙钛矿的相偏析抑制机制示意图[78]
Fig. 3. (a) Schematic structure of tandem solar cells and cross sectional SEM image[74]; (b) J-V curves of sub-cells and three-junction tandem solar cell[75]; (c) schematic structure of all perovskite triple-junction tandem solar cells[77]; (d) J-V curves of tandem solar cells in dark state and light[76]; (e) schematics of perovskite precursors during the crystallization process[79]; (f) schematic illustration of the suppression mechanism of light-induced phase segregation[78].
图 4 (a) 叠层太阳电池结构及截面SEM图像[67]; (b) 叠层太阳电池结构及截面SEM图像[80]; (c) 性能最佳的叠层太阳电池J-V曲线, 插图为叠层太阳电池结构示意图[69]; (d) 反溶剂沉积方法和气淬技术制备的钙钛矿电池横截面SEM图像[81]
Fig. 4. (a) Schematic structure of tandem solar cells and cross sectional SEM images[67]; (b) schematic structure of tandem solar cells and cross sectional SEM images[80]; (c) J-V curve of the champion tandem solar cell, illustrated with schematic structure of the tandem solar cell [69]; (d) cross sectional SEM image of perovskite cell prepared by anti-solvent dripping and gas quenching method[81].
图 5 (a) 添加剂工程工作机理示意图[82]; (b) 宽带隙钙钛矿混合相和分离相示意图[83]; (c) 薄膜的XRD图[84]; (d) 经认证的叠层太阳电池J-V曲线[85]
Fig. 5. (a) Schematic diagram of the working mechanism of additive engineering[82]; (b) illustration of the mixed-phase and segregated-phase of wide-bandgap perovskites[83]; (c) XRD pattern of film[84]; (d) certified tandem solar cells J-V curves[85].
表 1 单节宽带隙钙钛矿太阳电池光伏性能汇总表
Table 1. Summary of photovoltaic performance of single wide-band gap perovskite solar cells.
组分 禁带宽度/eV 开路电压/V 短路电流密度/(mA·cm–2) 填充 因子/% 能量转换效率/% Ref. Cs0.15MA0.15FA0.70Pb(I0.15Br0.85)3 2.05 1.27 9.4 70.4 8.4 [74] FA0.83Cs0.17Pb(Br0.7I0.3)3 1.94 1.28 11.9 76.0 11.6 [75] Cs0.2FA0.8PbI0.9Br2.1 1.73 1.07 9.9 76.0 8.1 [76] Cs0.2FA0.8PbI0.9Br2.1 1.99 1.262 11.2 73.5 10.4 [77] Rb0.15Cs0.85PbI1.75Br1.25 2.0 1.30 12.4 84.7 13.6 [78] Cs0.15FA0.85Pb(I0.4Br0.6)3 1.97 1.44 12.8 83.0 15.3 [79] CsFAPbIBr 1.8 \ \ \ \ [67] Cs0.2FA0.8Pb(I0.45Br0.55)3 1.90 1.09 11.7 71 9.1 [80] MAPb(I0.5Br0.35Cl0.15)3 1.96 1.28 14.16 76.6 13.88 [69] Cs0.05(FA0.55MA0.45)0.95Pb(I0.55Br0.45)3 1.83 1.12 13.6 74.6 11.3 [81] Cs0.1FA0.9PbBr2.1I0.9 1.98 1.38 14.0 76.6 15.0 [82] Rb0.05Cs0.12FA0.83PbI0.95Cl0.05Br2 1.98 1.33 13.05 76.7 13.4 [83] FA0.8Cs0.2Pb(I0.5Br0.5)3 1.84 1.27 16.4 77.0 16.0 [84] FA0.60MA0.15Cs0.25Pb(I0.45Br0.5OCN0.05)3 1.93 1.422 14.18 83.79 16.9 [85] 表 2 单片三结钙钛矿基叠层太阳电池光伏性能汇总表
Table 2. Summaries for PV performance of monolithic triple-junction perovskite-based tandem solar cells.
类型 宽带隙 中间带隙 窄带隙 开路电压/V 短路电流密度/(mA·cm–2) 填充因子/% 正扫/反扫效率/% 认证效率/% 面积/cm2 Ref. 钙钛矿/钙钛矿/有机 Cs0.15MA0.15FA0.70Pb (I0.15Br0.85)3 (2.05 eV) Cs0.15MA0.15FA0.70Pb (I0.85Br0.15)3 (1.62 eV) PM6:BTP-eC9:PCBM (1.33 eV) 3.03 9.1 70.4 19.4 \ 0.1 [74] \ \ \ 19.2 钙钛矿/钙钛矿/钙钛矿 FA0.83Cs0.17Pb(Br0.7I0.3)3 (1.94 eV) MAPbI3 (1.57 eV) MAPb0.75Sn0.25I3 (1.34 eV) 2.7 8.3 0.43 6.7 \ 0.092 [75] \ \ \ \ Cs0.1(FA0.66MA0.34)0.9PbI2Br (1.73 eV) FA0.66MA0.34PbI2.85Br0.15 (1.57 eV) FA0.66MA0.34Pb0.5Sn0.5I3 (1.23eV) 2.78 7.4 81 17.3 \ 0.067 [76] 2.78 7.42 82 17.0 Cs0.2FA0.8PbI0.9Br2.1 (1.99 eV) Cs0.05FA0.95PbI2.55Br0.45 (1.60 eV) MA0.3FA0.7Pb0.5Sn0.5I3 (1.22 eV) 2.80 8.8 81 20.1 \ 0.049 [77] 2.793 8.8 80.7 19.9 Rb0.15Cs0.85PbI1.75Br1.25 (2.0 eV) Cs0.05FA0.9MA0.05Pb (I0.9Br0.1)3 (1.60 eV) Cs0.05FA0.7MA0.25Pb0.5Sn0.5I3-0.05SnF2 (1.22 eV) 3.215 9.71 77.93 24.33 23.29 0.049 [78] 3.210 9.63 78.67 24.32 Cs0.15FA0.85Pb(I0.4Br0.6)3 (1.97 eV) Cs0.05FA0.9MA0.05Pb (I0.85Br0.15)3 (1.77 eV) Cs0.05FA0.7MA0.25 Pb0.5Sn0.5I3 (1.22 eV) 3.33 9.7 78 25.1 23.87 0.049 [79] \ \ \ \ 钙钛矿/钙钛矿/硅 CsFAPbIBr (1.8 eV) CsFAPbIBr (1.53 eV) Si (1.10 eV) 2.688 7.7 68.0 14.0 \ 1.42 [67] 2.692 7.7 58.7 12.1 Cs0.2FA0.8Pb(I0.45Br0.55)3 (1.90 eV) Cs0.1FA0.9PbI3 (1.55 eV) Si (1.10 eV) 2.74 8.54 86.0 20.1 \ 1.03 [80] \ \ \ \ MAPb(I0.5Br0.35Cl0.15)3 (1.96 eV) Cs0.2MA0.05FA0.75PbI3 (1.56 eV) Si (1.10 eV) 2.78 10.18 78.60 22.23 \ 0.1875 [69] 2.78 10.19 76.90 21.79 Cs0.05(FA0.55MA0.45)0.95Pb(I0.55Br0.45)3 (1.83 eV) Cs0.05(FA0.9MA0.1)0.95Pb (I0.95Br0.05)3 (1.56 eV) Si (1.10 eV) 2.87 8.9 78.1 20.1 \ 1.0 [81] 2.86 8.9 77.9 20.0 Cs0.1FA0.9PbBr2.1I0.9 (1.98 eV) Rb0.05Cs0.1FA0.85PbI3 (1.52 eV) Si (1.10 eV) 3.04 11.9 72.9 26.4 \ 1.0 [82] 3.01 11.9 71.1 25.5 Rb0.05Cs0.12FA0.83PbI0.95Cl0.05Br2 (1.98 eV) Cs0.05(FA0.98MA0.02)0.95Pb (I0.98Br0.02)3 (1.55 eV) Si (1.10 eV) 2.995 11.76 70.80 25.0 24.19 1.04 [83] 2.980 11.73 68.4 23.9 FA0.8Cs0.2Pb(I0.5Br0.5)3 (1.84 eV) FAPbI3 (1.52 eV) Si (1.10 eV) 2.84 11.6 0.74 24.4 \ 1.0 [84] 2.86 11.5 0.73 24.0 FA0.60MA0.15Cs0.25Pb (I0.45Br0.5OCN0.05)3 (1.93 eV) FA0.9Cs0.1PbI3 (1.55 eV) Si (1.10 eV) 3.132 11.58 76.15 27.62 27.1 1.0 [85] \ \ \ \ -
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