Passivation optimization and performance improvement of planar a-Si:H/c-Si heterojunction cells in perovskite/silicon tandem solar cells

Chen Jun-Fan; Ren Hui-Zhi; Hou Fu-Hua; Zhou Zhong-Xin; Ren Qian-Shang; Zhang De-Kun; Wei Chang-Chun; Zhang Xiao-Dan; Hou Guo-Fu; Zhao Ying

doi:10.7498/aps.68.20181759

Abstract

Recently, the monolithic spin-coating perovskite/planar silicon heterojunction tandem solar cells with high performance have attracted attention mainly due to simple fabrication, low preparation cost and high efficiency, especially compared with fully textured multi-junction perovskite/silicon tandem device. As is well known, the excellent passivation of a-Si:H/c-Si interface is the key to achieving a high-efficiency planar silicon heterojunction solar cell, which further improves the performance of the corresponding tandem cell. Therefore, we investigate the elements affecting a-Si:H/c-Si interface passivation, including the c-Si surface treatment technique, a-Si:H passivation layer and P-type emitter layer and so on. In these experiments, we adjust the immersed time of diluent hydrofluoric acid and pre-deposited hydrogen plasma with different gas mixture flows. Also, the suitable deposition parameters of intrinsic a-Si:H passivation layer are regulated by varying hydrogen dilution and time, and variously slight silane content is embedded into i-a-Si:H /P-type (I/P) emitter interface by hydrogen-rich plasma treating which is for acquiring optimal experimental processing conditions to promote the chemical passivation. In addition, the p-a-Si:H and p-nc-Si:H are comparatively studied as buffer layers to further improve the I/P interface passivation by varying the hydrogen dilution in the gas mixture during deposition. It can be found that p-nc-Si:H buffer layer with high conductivity and wide bandgap can not only reduce the defect density at the I/P interface, but also increase the conductivity of P-type emitter, which further improves the field passivation effect. By the above- mentioned optimization, the highest minority carrier lifetime and implied open-circuit voltage (iV_oc) of the structure of P-type emitter/a-Si:H(i)/c-Si/a-Si:H(i)/N-type layer (inip) sample can respectively reach 2855 μs and 709 mV, which demonstrates authentically outstanding passivation performance. An efficiency of 18.76% can be obtained for the planar a-Si/c-Si heterojunction solar cell with a V_oc of 681.5 mV, which is 34.3 mV higher than that of the reference device. Regarding the optimized planar a-Si:H/c-Si heterojunction solar cell as the bottom cell, we also obtain an efficiency of 21.24% for perovskite/silicon heterojunction tandem solar cell with an open-circuit voltage of 1780 mV, which proves that the above strategies are very effective for improving the passivation optimization and performance of bottom cell in the tandem device.

Keywords:

a-Si/c-Si heterojunction /
interface passivation /
minority lifetime /
perovskite/silicon heterojunction tandem solar cell

Authors and contacts

1.
Institute of Photoelectronics Thin Film Devices and Technology of Nankai University, Tianjin 300071, China
2.
Key Laboratory of Photoelectronics Thin Film Devices and Technology of Tianjin, Tianjin 300071, China
3.
Engineering Center of Thin Film Photoelectronics Technology of Ministry of Education, Tianjin 300071, China
4.
Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin, Tianjin 300071, China

Corresponding author: Zhang Xiao-Dan, xdzhang@nankai.edu.cn ; Hou Guo-Fu, gfhou@nankai.edu.cn ;

Funds: Project supported by the International Cooperation of the Ministry of Science and Technology of China (Grant No. 2014DFE60170), the National Natural Science Foundation of China (Grant Nos. 61474065, 61674084, 61474066), the Overseas Expertise Introduction Project for Discipline Innovation of Higher Education of China (Grant No. B16027), the Open Project of the Key Laboratory of Optical Information Science and Technology of the Ministry of Education of China (Grant No. 2017KFKT015), and the Fundamental Research Fund for the Central Universities, China.

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References

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Cited By

图 1 inip结构样品的少子寿命与iV_oc随HF处理时间的变化　　　　

Figure 1. The effective minority carries lifetime and iV_oc of inip samples with various hydrofluoric acid treatment time.

DownLoad: Full-Size Img PowerPoint

图 2 inip结构样品的少子寿命与iV_oc随等离子体处理过程H₂流量的变化

Figure 2. The effective minority carrier lifetimes and iV_oc of inip samples with different H₂ flow rates for hydrogen pretreatment.

DownLoad: Full-Size Img PowerPoint

图 3 三组不同钝化条件下, 对应inip结构样品的少子寿命与iV_oc

Figure 3. Effective minori ty carrier lifetime and iV_oc of inip samples with different H₂ and SiH₄ flow rates.

DownLoad: Full-Size Img PowerPoint

图 4 不同钝化层沉积时间对应inip结构样品的少子寿命与iV_oc

Figure 4. Effective minority carrier lifetime and iV_oc of inip samples with different deposition time of passivation layer.

DownLoad: Full-Size Img PowerPoint

图 5 采用I/P界面富氢处理以及c-Si表面不同氢预处理时间对应inip结构样品的少子寿命与iV_oc

Figure 5. Effective minority carrier lifetime and iV_oc of inip samples with hydrogen-rich plasma treatment on I/P interfaces and different H₂ pretreatment on c-Si surfaces.

DownLoad: Full-Size Img PowerPoint

图 6 不同H₂流量下制备的P型掺杂层的光吸收曲线(图中表格给出对应的截止吸收波长、光学带隙、厚度、暗态电导率)

Figure 6. Light absorption spectra of P-type layers with different H₂ flow rates (cut-off absorption wavelength, optical bandgap, thickness, dark conductivity of these layers were included in the inserted table).

DownLoad: Full-Size Img PowerPoint

图 7 不同P型缓冲层及富氢等离子体处理微调下, 对应inip结构样品的少子寿命与iV_oc(1# 无P型缓冲层; 2# P型非晶硅作为缓冲层; 3# P型微晶硅作为缓冲层; 4# 增加富氢处理的H₂流量, P型微晶硅作为缓冲层)(黄色、白色区域钝化层沉积分别为40 和35 s)

Figure 7. The effective minority carrier lifetime and iV_oc of inip samples with different P-type buffer layers and hydrogen-rich plasma treatments (1# without P-type buffer layer; 2# P-type amorphous silicon as the buffer layer; 3# P-type microcrystalline silicon as the buffer layer; 4# increasing the flow of rich hydrogen treatment of H₂, P-type microcrystalline silicon as the buffer layer)(The deposition time of passivation layer is 40 and 35 s in yellow and white areas, respectively).

DownLoad: Full-Size Img PowerPoint

图 8 采用未经钝化改善和钝化改善后的工艺条件制备平面a-Si:H/c-Si异质结太阳电池　(a)和(b)为电池结构示意图; (c)少子寿命与iV_oc; (d) J-V特性与EQE

Figure 8. (a) and (b) device-structure, (c) effective minority carrier lifetime and iV_oc, (d) J-V characteristics and EQE of planar a-Si:H/c-Si heterojunction cells with (without) passivation improvement.

DownLoad: Full-Size Img PowerPoint

图 9 钙钛矿/硅异质结叠层太阳电池　(a) J-V曲线; (b)EQE曲线

Figure 9. (a) J-V characteristics and (b) EQE of perovskite/silicon heterojunction tandem solar cell.

DownLoad: Full-Size Img PowerPoint

[1]	贾旭平 2011 电源技术 35 127 Google Scholar Jia X P 2011 Power Technology 35 127 Google Scholar
[2]	Yoshikawa K, Yoshida W, Irie T, Kawasaki H, Konishi K, Ishibashi H, Asatani T, Adachi D, Kanematsu M, Uzu H, Yamamoto K 2017 Sol. Energy Mater. Sol. Cells 173 37 Google Scholar
[3]	Kerr M J, Cuevas A, Campbell P 2003 Prog. Photovoltaics Res. Appl. 11 97 Google Scholar
[4]	Richter A, Hermle M, Glunz S W 2013 IEEE J. Photovoltaics 3 1184 Google Scholar
[5]	Kurtz S, Geisz J 2010 Opt. Express 18 A73 Google Scholar
[6]	Shah A V, Schade H, Vanecek M, Meier J, Vallat-Sauvain E, Wyrsch N, Kroll E, Droz C, Bailat J 2004 Prog. Photovoltaics Res. Appl. 12 113 Google Scholar
[7]	Jeon N J, Na H, Jung E H, Yang T Y, Lee Y G, Kim G, Shin H W, Seok S, Lee J, Seo J 2018 Nat. Energy 3 682 Google Scholar
[8]	Lal N N, Dkhissi Y, Li W, Hou Q C, Cheng Y B, Bach U 2017 Adv. Energy Mater. 7 1602761 Google Scholar
[9]	Filipič M, Löper P, Niesen B, Wolf S D, Krč J, Ballif C, Topič M 2015 Opt. Express 23 A263 Google Scholar
[10]	Mailoa J P, Bailie C D, Johlin E C, Johlin, Hoke E T, Akey A J, Nguyen W H, McGehee M D, Buonassisi T 2015 Appl. Phys. Lett. 106 121105 Google Scholar
[11]	Albrecht S, Saliba M, Baena J P C, Lang F, Kegelmann L, Mews M, Steier L, Abate A, Rappich J, Korte L, Schlatmann R, Nazeeruddin M K, Hagfeldt A, Grätzel M, Rech B 2016 Energy Environ. Sci. 9 81 Google Scholar
[12]	Werner J, Weng C H, Walter A, Fesquet L, Seif J P, Wolf S D, Niesen B, Ballif C 2015 J. Phys. Chem. Lett. 7 161
[13]	Ding K, Aeberhard U, Finger F, Rau U 2012 Phys. Status Solidi RRL 6 193 Google Scholar
[14]	Zhang H, Nakada K, Miyajima S, Konagai M 2015 Phys. Status Solidi RRL 9 225 Google Scholar
[15]	Krajangsang T, Inthisang S, Sritharathikhun J, Hongsingthong A, Limmanee A , Kittisontirak S, Chinnavornrungsee P, Phatthanakun R, Sriprapha K 2017 Thin Solid Films 628 107 Google Scholar
[16]	王文静, 李海玲, 周春兰, 赵雷 2014 晶体硅太阳电池制造技术(北京: 机械工业出版社) 第90页 Wang W J, Li H L, Zhou C L, Zhao L 2014 Technology for Manufacturing Crystalline Silicon Solar Cells (Beijing: China Machine Press) p90 (in Chinese)
[17]	Zhao J, Wang A, Green M A 1999 Prog. Photovoltaics Res. Appl. 7 471 Google Scholar
[18]	Kerr M J, Cuevas A 2002 Semicond. Sci. Technol. 17 166 Google Scholar
[19]	Agostinelli G, Delabie A, Vitanov P, Alexieva Z, Dekkers H F W, Wolf S D, Beaucarne G 2006 Sol. Energy Mater. Sol. Cells 90 3438 Google Scholar
[20]	Hoex B, Heil S B S, Langereis E, Sanden M C M V D, Kessels W M M 2006 Appl. Phys. Lett. 89 042112 Google Scholar
[21]	Fuhs W, Niemann K, Stuke J 1974 AIP Conf. Proc. 20 345
[22]	Hamakawa Y, Fujimoto K, Okuda K, Kashima Y, Nonomura S, Okamoto H 1983 Appl. Phys. Lett. 43 644 Google Scholar
[23]	Ren Q S, Li S Z, Zhu S J, Ren H Z, Yao X, Wei C C, Yan B J, Zhao Y, Zhang X D 2018 Sol. Energy Mater. Sol. Cells 185 124 Google Scholar
[24]	Shockley W, Read Jr W T 1952 Phys. Rev. 87 835 Google Scholar
[25]	Hall R N 1952 Phys. Rev. 87 387
[26]	Sproul A B 1994 J. Appl. Phys. 76 2851 Google Scholar
[27]	Jensen N, Rau U, Hausner R M, Uppal S, Oberbeck L, Bergman R B, Werner J H 2000 J. Appl. Phys. 87 2639 Google Scholar
[28]	杨静, 陈剑辉, 沈艳娇, 陈静伟, 许颖, 麦耀华 2017 太阳能学报 38 201 Yang J, Chen J H, Shen Y J, Chen J W, Xu Y, Mai Y H 2017 Acta Energiae Solaris Sin. 1 201
[29]	沈文忠, 李正平 2014 硅基异质结太阳电池物理与器件(北京: 科学出版社) 第130−208页 Shen W Z, Li Z P 2014 Physics and Devices of Silicon Heterojunction Solar Cells (Beijin: Science Press) pp130−208 (in Chinese)
[30]	Wang T H, Iwaniczko E, Page M R, Wang Q, Levi D H, Yan Y, Xu Y, Branz H M 2005 MRS Online Proceedings Library Archive. 862 183
[31]	Taguchi M, Yano A, Tohoda S, Matsuyama K, Nakamura Y, Nishiwaki T, Fujita K, Maruyama E 2014 IEEE J. Photovoltaics 4 96 Google Scholar
[32]	王奉友 2016 博士学位论文 (天津:南开大学) Wang F Y 2016 Ph.D. Dissertation (Tianjin: Nankai University)(in Chinese)
[33]	Garcia-Belmonte G, García-Cañadas J, Mora-Seró I, Bisquert J, Voz C, Puigdollers J, Alcubilla R 2006 Thin Solid Films 514 254 Google Scholar
[34]	Ling Z P, Ge J, Mueller T, Wong J, Aberle A G 2012 Energy Procedia 15 118 Google Scholar
[35]	Meng F Y, Shen L L, Shi J H, Zhang L P, Liu J N, Liu Y C, Liu Z X 2015 Appl. Phys. Lett. 107 96
[36]	Cuony P, Alexander D T, Perez-Wurfl I, Despeisse M, Bugnon G, Boccard M, Söderström T, Hessler-Wyser A, Hébert C, Ballif C 2012 Adv. Mater. 24 1182 Google Scholar
[37]	Ding K, Aeberhard U, Smirnov V, Holländer B, Finger F, Rau U 2013 Jpn. J. Appl. Phys. 52 122304 Google Scholar
[38]	Wang L G, Wang F, Zhang X D, Wang N, Jiang Y J, Hao Q Y, Zhao Y 2014 J. Power Sources 268 619 Google Scholar
[39]	Sonobe H, Sato A, Shimizu S, Matsui T, Kondo M, Matsuda A 2006 Thin Solid Films 502 306 Google Scholar
[40]	Sriraman S, Agarwal S, Aydil E S, Maroudas D 2002 Nature 418 62 Google Scholar
[41]	Wang F Y, Zhang X D, Wang L G, Jiang Y J, Wei C C, Sun J, Zhao Y 2014 ACS Appl. Mater. Interfaces 6 15098 Google Scholar
[42]	Wang F Y, Zhang X D, Wang L G, Fang J, Wei C C, Chen X L, Wang G C, Zhao Y 2014 Sol. Energy 108 308 Google Scholar
[43]	Zhang Q F, Zhu M F, Liu F Z, Zhou Y Q 2007 J. Mater. Sci.- Mater. Electron. 18 33 Google Scholar
[44]	Zhang X D, Ren Q S, Li S Z, Ren H Z, Wei C C, Hou G F, Xu S Z, Zhao Y 2017 Patent 201710878335.7
[45]	Fujiwara H, Kondo M 2007 J. Appl. Phys. 101 054516 Google Scholar
[46]	Jiang Y J, Zhang X D, Wang F Y, Wei C C, Zhao Y 2014 RSC Adv. 4 29794 Google Scholar
[47]	Wang F Y, Du R C, Ren Q S, Wei C C, Zhao Y, Zhang X D 2017 J. Mater. Chem.5 1751
[48]	Qiao Z, Xie X J, Hao Q Y, Wen D , Xue J M, Liu C C 2015 Appl. Surf. Sci. 324 152 Google Scholar
[49]	Descoeudres A, Barraud L, de Wolf S, Strahm B, Lachenal D, Guérin C, Holman Z C, Zicarelli F, Demaurex B, Seif J, Holovsky J, Ballif C 2011 Appl. Phys. Lett. 99 123506 Google Scholar
[50]	Yan B, Yue G, Yang J, Guha S, Williamson D L, Han D X, Jiang C S 2004 Appl. Phys. Lett. 85 1955 Google Scholar
[51]	Ma J, Ni J, Zhang J J, Liu Q, Hou G F, Chen X L, Zhang X D, Geng X H, Zhao Y 2014 Sol. Energy Mater. Sol. Cells 120 635 Google Scholar

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Vol. 68, Issue 2 - 2019-01-20

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