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In order to solve the problem of low light absorption efficiency of single photon detectors based on quantum-dot gated field effect transistor (QDFET), a new type of quantum-dot gated field effect enhanced single-photon detectors (QDFEE-SPD) was proposed. QDFEE-SPD was designed with a resonant cavity, and the GaAs/AlAs multilayer was used as the basic mirror. The light absorption efficiency and responsivity of QDFEE-SPD were analyzed and simulated. Results show that, compared with that without cavity, the absorption efficiency and responsivity of the QDFEE-SPD is greatly improved. Also for the optimization of light absorption efficiency, the thickness of the absorption layer should normally be 0.10.5 m. Then the material samples of QDFEE-SPD were grown and tested. Reflection spectroscopy and PL spectroscopy testing results show that the light absorption efficiency has been significantly enhanced. The achievements in this article provide a new way for researching high-efficiency single-photon detection technology based on QDFET.
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Keywords:
- QDFEE-SPD /
- resonant cavity /
- absorption efficiency /
- optical absorption enhancement effect
[1] Bennett C, Brassard G 1984 International Coference on Computers, Systems&Signal Processing Bangalore, India December 10-12, 1984 p175
[2] Zhao N, Pei X C, Liu D, Quan D X, Sun X N 2011 Acta Phys. Sin. 9 090307 (in Chinese) [赵楠, 刘丹, 权东晓, 孙晓楠 2006 物理学报 9 090307]
[3] Bennett C H, Brassard G, Crepeau C 2008 Phys. Rev. Lett. 70 1895
[4] Ye B, Gu R J, Xu W B 2011 Acta Phys. Sin. 9 3709 (in Chinese) [叶宾, 谷瑞军, 须文波 2006 物理学报 9 3709]
[5] Lita A E, Miller A J, Nam S W 2008 Optics Express 16 5
[6] Rowe A M 2006 Appl. Phys. Lett. 89 253505
[7] Li H W 2007 Appl. Phys. Lett. 91 073516
[8] Rosfjord K M, Yang J K W, Dauler E A 2006 Opt. Express 14 527
[9] Gol’tsman G N, Korneev A, Rubtsova I 2005 Phys. Stat. Sol. 5 1480
[10] Shields AJ, O’Sullivan M P 2000 Appl. Phys. Lett. 76 3673
[11] Rowe M A, Gansen E J, Greene M, Hadfield R H, Harvey T E, Su M Y, Nam S W, Mirin R P 2006 Appl. Phys. Lett. 89 253505
[12] Kardynal B E, Hees S S, Shields A J 2007 Appl. Phys. Lett. 90 181114
[13] Gansen1 E J, Rowe1 M A, Greene M B, Rosenberg D, EHarvey T 2007 Nature Photonics 1 585
[14] Tong C Z, Niu Z C, Han Q, Wu R H 2005 Acta Phys. Sin. 54 3651 (in Chinese) [佟存柱, 牛智川, 韩勤, 吴荣汉 2006 物理学报 54 3651]
[15] Yoffe G W 1991 Appl. Phys. 70 1081
[16] Jewell Jack L, Harbison J P, Scherer A 1991 IEEE Journal of Quantum Electronics 27 1332
[17] Yabl onovitch E 1987 Phys. Rev. Lett. 58 2059
[18] nl M S, Strite S 1995 Appl. Phys. Rev. 78 607
[19] George Henry H 1989 IEEE Transaction on Electron Devices 36 1390
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[1] Bennett C, Brassard G 1984 International Coference on Computers, Systems&Signal Processing Bangalore, India December 10-12, 1984 p175
[2] Zhao N, Pei X C, Liu D, Quan D X, Sun X N 2011 Acta Phys. Sin. 9 090307 (in Chinese) [赵楠, 刘丹, 权东晓, 孙晓楠 2006 物理学报 9 090307]
[3] Bennett C H, Brassard G, Crepeau C 2008 Phys. Rev. Lett. 70 1895
[4] Ye B, Gu R J, Xu W B 2011 Acta Phys. Sin. 9 3709 (in Chinese) [叶宾, 谷瑞军, 须文波 2006 物理学报 9 3709]
[5] Lita A E, Miller A J, Nam S W 2008 Optics Express 16 5
[6] Rowe A M 2006 Appl. Phys. Lett. 89 253505
[7] Li H W 2007 Appl. Phys. Lett. 91 073516
[8] Rosfjord K M, Yang J K W, Dauler E A 2006 Opt. Express 14 527
[9] Gol’tsman G N, Korneev A, Rubtsova I 2005 Phys. Stat. Sol. 5 1480
[10] Shields AJ, O’Sullivan M P 2000 Appl. Phys. Lett. 76 3673
[11] Rowe M A, Gansen E J, Greene M, Hadfield R H, Harvey T E, Su M Y, Nam S W, Mirin R P 2006 Appl. Phys. Lett. 89 253505
[12] Kardynal B E, Hees S S, Shields A J 2007 Appl. Phys. Lett. 90 181114
[13] Gansen1 E J, Rowe1 M A, Greene M B, Rosenberg D, EHarvey T 2007 Nature Photonics 1 585
[14] Tong C Z, Niu Z C, Han Q, Wu R H 2005 Acta Phys. Sin. 54 3651 (in Chinese) [佟存柱, 牛智川, 韩勤, 吴荣汉 2006 物理学报 54 3651]
[15] Yoffe G W 1991 Appl. Phys. 70 1081
[16] Jewell Jack L, Harbison J P, Scherer A 1991 IEEE Journal of Quantum Electronics 27 1332
[17] Yabl onovitch E 1987 Phys. Rev. Lett. 58 2059
[18] nl M S, Strite S 1995 Appl. Phys. Rev. 78 607
[19] George Henry H 1989 IEEE Transaction on Electron Devices 36 1390
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