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Deposition of colloidal particles in a drying droplet is important in many scientific researches and technological applications. In this work, the ring deposition of drying droplets on a solid substrate is investigated experimentally at a microscopic level. A ring deposition is formed at the contact line as the water solution droplet containing SiO2 particles is drying, just like the formation of coffee ring. Contact line pinning is crucial to the ring deposition formation. There will be a replenish flow in the droplet towards the edge, and the particles are driven to the contact line, deposited on the substrate. As the particle mass fraction is large, the particles which are left inside the spot, when the droplet dries out, may form a single particle layer, packing in order. The contact angle of the droplet on glass substrate is very small, the SiO2 particles will gather at the rim of the droplet, which initially form a chain along the contact line. As more particles come to the rim, they are deposited in a line by line way to form a 2D close packing. Since the contact angle decreases with evaporation when the contact line is pinned, a capillary force between liquid surface and particles arises once the height of droplet surface near the contact line is lower than that of the particle, pushing the particles to move inward. The effect on the larger particles is more pronounced-it even leads to a separation of the particles, with the smaller ones at the outer side.
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Keywords:
- droplet /
- contact line /
- evaporation /
- particle
[1] Monteux C, Lequeux F 2011 Langmuir 27 2917
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[15] Yakhno T A 2011 Phys. Chem. 1 10
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[21] Still T, Yunker P J, Yodh A G 2012 Langmuir 28 4984
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[23] Ristenpart W D, Kim P G, Domingues C, Wan J, Stone H A 2007 Phys. Rev. Lett. 99 234502
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[26] Maheshwari S, Zhang L, Zhu Y X, Chang H C 2008 Phys. Rev. Lett. 100 044503
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[28] Schäffer E, Wong P Z 1998 Phys. Rev. Lett. 80 3069
[29] Weon B M, Je J H 2013 Phys. Rev. Lett. 110 028303
[30] Jensen K E, Pennachio D, Recht D, Weitz D A, Spaepen F 2013 Soft Matter 9 320
[31] Zhang J H, Li Y F, Zhang X M, Yang B 2010 Adv. Mater. 22 4249
[32] Weon B M, Je J H 2010 Phys. Rev. E 82 015305
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[1] Monteux C, Lequeux F 2011 Langmuir 27 2917
[2] Bhardwaj R, Fang X H, Somasundaran P, Attinger D 2010 Langmuir 26 7833
[3] Parneix C, Vandoolaeghe P, Nikolayev V, Quéré D, Li J, Cabane B 2010 Phys. Rev. Lett. 105 266103
[4] Li J, Cabane B, Sztucki M, Gummel J, Goehring L 2012 Langmuir 28 200
[5] Fischer B J 2002 Langmuir 18 60
[6] Velikov K P 2002 Science 296 106
[7] Chen L F, Evans J R G 2009 Langmuir 25 11299
[8] Bhardwaj R, Fang X H, Attinger D 2009 New J. Phys. 11 075020
[9] Keseroğlu K, Çulha M 2011 J. Colloid Interface Sci. 360 8
[10] Bigioni T P, Lin X M, Nguyen T T, Corwin E I, Witten T A, Jaeger H M 2006 Nat. Mater. 5 265
[11] Choi S, Stassi S, Pisano A P, Zohdi T I 2010 Langmuir 26 11690
[12] Hodges C S, Ding Y L, Biggs S 2010 J.Colloid Interface Sci. 352 99
[13] Kaya D, Belyi V A, Muthukumar M 2010 J. Chem. Phys. 133 114905
[14] Smalyukh I I, Zribi O V, Butler J C, Lavrentovich O D, Wong G C L 2006 Phys. Rev. Lett. 96 177801
[15] Yakhno T A 2011 Phys. Chem. 1 10
[16] Deegan R D, Bakajin O, Dupont T F, Huber G, Nagel S R, Witten T A 1997 Nature 389 827
[17] Deegan R D, Bakajin O, Dupont T F, Huber G, Nagel S R, Witten T A 2000 Phys. Rev. E 62 756
[18] Yunker P J, Gratale M, Lohr M A, Still T, Lubensky T C, Yodh A G 2012 Phys. Rev. Lett. 108 228303
[19] Yunker P J, Still T, Lohr M A, Yodh A G 2011 Nature 476 308
[20] Hu H, Larson R G 2006 J. Phys. Chem. B 110 7090
[21] Still T, Yunker P J, Yodh A G 2012 Langmuir 28 4984
[22] Truskett V, Stebe K J 2003 Langmuir 19 8271
[23] Ristenpart W D, Kim P G, Domingues C, Wan J, Stone H A 2007 Phys. Rev. Lett. 99 234502
[24] Xu J, Xia J F, Hong S W, Lin Z Q, Qiu F, Yang Y L 2006 Phys. Rev. Lett. 96 066104
[25] Berteloot G, Hoang A, Daerr A, Kavehpour H P, Lequeux F, Limat L 2012 J. Colloid Interface Sci. 370 155
[26] Maheshwari S, Zhang L, Zhu Y X, Chang H C 2008 Phys. Rev. Lett. 100 044503
[27] Schäffer E, W P Z 2000 Phys. Rev. E 61 5257
[28] Schäffer E, Wong P Z 1998 Phys. Rev. Lett. 80 3069
[29] Weon B M, Je J H 2013 Phys. Rev. Lett. 110 028303
[30] Jensen K E, Pennachio D, Recht D, Weitz D A, Spaepen F 2013 Soft Matter 9 320
[31] Zhang J H, Li Y F, Zhang X M, Yang B 2010 Adv. Mater. 22 4249
[32] Weon B M, Je J H 2010 Phys. Rev. E 82 015305
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