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In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium material, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.
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Keywords:
- hydrogenated amorphous silicon germanium solar cell /
- short circuit current density /
- open circuit voltage /
- band gap profiling
[1] Mackenzie K D, Eggert J R, Leopold D J, Li Y M, Lin S, Paul W 1985 Phys. Rev. B 31 2198
[2] Yan B, Yue G, Sivec L, Yang J, Guha S, Jiang C 2011 Appl. Phys. Lett. 99 113512
[3] Zhang X D, Zheng X X, Wang G H, Xu S Z, Yue Q, Lin Q, Wei C C, Sun J, Zhang D K, Xiong S Z, Geng X H, Zhao Y 2010 Acta Phys. Sin. 59 8231 (in Chinese) [张晓丹, 郑新霞, 王光红, 许盛之, 岳强, 林泉, 魏长春, 孙建, 张德坤, 熊绍珍, 耿新华, 赵颖 2010 物理学报 59 8231]
[4] Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 物理学报 60 068801]
[5] Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801
[6] Han X Y, Hou G F, Zhang X D, Wei C C, Li G J, Zhang D K, Chen X L, Sun J, Zhang J J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 3563
[7] Crandall R S 1983 J. Appl. Phys. 54 7176
[8] Matsuda A, Koyama M, Ikuchi N, Imanishi Y, Tanaka K 1986 J. Appl. Phys. 25 54
[9] Mahan A H, Menna P, Tsu R 1987 Appl. Phys. Lett. 51 1167
[10] Banerjee A, Xu X, Yang J, Guha S 1995 Appl. Phys. Lett. 67 2975
[11] Zimmer J, Stiebig H, Wagner H 1998 J. Appl. Phys. 84 611
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[1] Mackenzie K D, Eggert J R, Leopold D J, Li Y M, Lin S, Paul W 1985 Phys. Rev. B 31 2198
[2] Yan B, Yue G, Sivec L, Yang J, Guha S, Jiang C 2011 Appl. Phys. Lett. 99 113512
[3] Zhang X D, Zheng X X, Wang G H, Xu S Z, Yue Q, Lin Q, Wei C C, Sun J, Zhang D K, Xiong S Z, Geng X H, Zhao Y 2010 Acta Phys. Sin. 59 8231 (in Chinese) [张晓丹, 郑新霞, 王光红, 许盛之, 岳强, 林泉, 魏长春, 孙建, 张德坤, 熊绍珍, 耿新华, 赵颖 2010 物理学报 59 8231]
[4] Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 物理学报 60 068801]
[5] Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801
[6] Han X Y, Hou G F, Zhang X D, Wei C C, Li G J, Zhang D K, Chen X L, Sun J, Zhang J J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 3563
[7] Crandall R S 1983 J. Appl. Phys. 54 7176
[8] Matsuda A, Koyama M, Ikuchi N, Imanishi Y, Tanaka K 1986 J. Appl. Phys. 25 54
[9] Mahan A H, Menna P, Tsu R 1987 Appl. Phys. Lett. 51 1167
[10] Banerjee A, Xu X, Yang J, Guha S 1995 Appl. Phys. Lett. 67 2975
[11] Zimmer J, Stiebig H, Wagner H 1998 J. Appl. Phys. 84 611
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