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Characterization of typical infrared characteristic peaks of hydrogen in nitrogen and hydrogen co-doped diamond crystals

Yan Bing-Min Jia Xiao-Peng Qin Jie-Ming Sun Shi-Shuai Zhou Zhen-Xiang Fang Chao Ma Hong-An

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Characterization of typical infrared characteristic peaks of hydrogen in nitrogen and hydrogen co-doped diamond crystals

Yan Bing-Min, Jia Xiao-Peng, Qin Jie-Ming, Sun Shi-Shuai, Zhou Zhen-Xiang, Fang Chao, Ma Hong-An
cstr: 32037.14.aps.63.048101
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  • The 3107 cm-1 peak is observed in the infrared absorption spectra of all types of Ia diamonds, but it has not been observed in the iron-based catalyst. A series of nitrogen and hydrogen-doped diamond crystals is successfully synthesized using P3N5 as the nitrogen source in a catalyst-carbon system at a lower pressure and temperature (6.3 GPa, 1500 ℃). Fourier transform infrared micro-spectroscopy reveals that the hydrogen atoms existing in the synthesized diamond are in two forms. The one is attributed to the CH bond stretching (3107 cm-1) and bending (1405 cm-1) vibrations of the vinylidene group (C=CH2). The other is due to sp3 hybridization CH bond symmetric (2850 cm-1) and anti-symmetric (2920 cm-1) vibrations. According to our result, we find that the 3107 cm-1 hydrogen absorption peak is related to the aggregated nitrogen in synthetic diamond. The 3107 cm-1 peak could not be observed in synthetic diamond without aggregated nitrogen, even if it has a high nitrogen concentration. And the hydrogen absorption peaks at 2920 and 2850 cm-1 are more widespread than the absorption peak at 3107 cm-1, this suggests that the sp3 CH bond more widely exists in diamond than the vinylidene group (C=CH2). Infrared spectra analysis indicates that the hydrogen impurity mainly exists in the natural diamond as vinylidene group as seen from the absorption peak intensity. We believe that our results provide a new way to study the formation mechanism of the natural diamond. Moreover, the ideal synthesis condition in our system supplies a possible way for us to design n-type diamond semiconductor.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51172089).
    [1]

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    [2]

    Zhang W J, Wu Y, Wong W K, Meng X M, Chan C Y, Bello I, Lifshitz Y, Lee S T 2003 Appl. Phys. Lett. 83 3365

    [3]

    Wang J, Chen G, Chatrathi M P, Fujishima A, Tryk D A, Shin D 2003 Anal. Chem. 75 935

    [4]

    Shin D, Sarada B V, Tryk D A, Fujishima A, Wang J 2003 Anal. Chem. 75 530

    [5]

    Hu M H, Ma H A, Yan B M, Zhang Z F, Li Y, Zhou Z X, Qin J M, Jia X P 2012 Acta Phys. Sin. 61 078102 (in Chinese) [胡美华, 马红安, 颜丙敏, 张壮飞, 李勇, 周振翔, 秦杰明, 贾晓鹏 2012 物理学报 61 078102]

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    Koizumi S, Watanabe K, Hasegawa M, Kanda H 2001 Science 292 1899

    [7]

    Yu B D, Miyamoto Y, Sugino O 2000 Appl. Phys. Lett. 76 976

    [8]

    Polyakov V I, Rukovishnikov A I, Rossukanyi N M, Ralchenko V G 2001 Diam. Relat. Mater. 10 593

    [9]

    Zhang Z F, Jia X P, Liu X B, Hu M H, Li Y, Yan B M, Ma H A 2012 Chin. Phys. B 21 038103

    [10]

    Liang Z Z, Kanda H, Jia X P, Ma H A, Zhu P W, Guan Q F, Zang C Y 2006 Carbon 44 913

    [11]

    Chrenko R M, McDonald R S, Darrow K A 1967 Nature 213 474

    [12]

    Runciman W A, Carter T 1971 Solid St. Commun. 9 315

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    Woods G S, Collins A T 1983 J. Phys. Chem. Solids 44 471

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    Palyanov Y N, Kupriyanov I N, Borzdov Y M, Sokol A G, Khonkhryakov A F 2009 Cryst. Growth. Des. 9 2922

    [15]

    Meng Y F Yan C S, Lai J, Krasnicki S, Shu H Y, Yu T, Liang Q, Mao H K, Hemley R J 2008 Proc. Natl. Acad. Sci. USA 105 17620

    [16]

    Charles S J, Butler J E, Feygelson B N, Newton M E, Carroll D I, Steeds J W, Darwish H, Yan C S, Mao H K, Hemley R J 2004 Phys. Status Solidi A 201 2473

    [17]

    Borzdov Y, Pal'yanov Y, Kupriyanov I, Gusev V, Khokhryakov A, Sokol A, Efremov A 2002 Diam. Relat. Mater. 11 1863

    [18]

    Kiflawi I, Fisher D, Kanda H, Sittas G 1996 Diam. Relat. Mater. 5 1516

    [19]

    Zhang Z F, Jia X P, Sun S S, Liu X B, Li Y, Yan B M, Ma H A 2013 Int. J. Refractory Metals Hard Mater. 38 111

    [20]

    Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z F, Ma H A 2012 Chin. Phys. B 21 058101

    [21]

    Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Bex P 2002 J. Phys. Condens. Matter 14 11269

    [22]

    Coudberg P, Catherine Y 1987 Thin Solid Films 146 93

    [23]

    McNamara K M, Williams B E, Gleason K K, Scruggs B E 1994 J. Appl. Phys. 76 2466

    [24]

    Field J E 1992 The Properties of Natural and Synthetic Diamond (London: Academic) pp36-41, 81-179

    [25]

    Kanda H, Akaishi M Yamaoka S 1999 Diam. Relat. Mater. 8 1441

  • [1]

    Kim Y D, Choi W, Wakimoto H, Usami S, Tomokage H, Ando T 1999 Appl. Phys. Lett. 75 3219

    [2]

    Zhang W J, Wu Y, Wong W K, Meng X M, Chan C Y, Bello I, Lifshitz Y, Lee S T 2003 Appl. Phys. Lett. 83 3365

    [3]

    Wang J, Chen G, Chatrathi M P, Fujishima A, Tryk D A, Shin D 2003 Anal. Chem. 75 935

    [4]

    Shin D, Sarada B V, Tryk D A, Fujishima A, Wang J 2003 Anal. Chem. 75 530

    [5]

    Hu M H, Ma H A, Yan B M, Zhang Z F, Li Y, Zhou Z X, Qin J M, Jia X P 2012 Acta Phys. Sin. 61 078102 (in Chinese) [胡美华, 马红安, 颜丙敏, 张壮飞, 李勇, 周振翔, 秦杰明, 贾晓鹏 2012 物理学报 61 078102]

    [6]

    Koizumi S, Watanabe K, Hasegawa M, Kanda H 2001 Science 292 1899

    [7]

    Yu B D, Miyamoto Y, Sugino O 2000 Appl. Phys. Lett. 76 976

    [8]

    Polyakov V I, Rukovishnikov A I, Rossukanyi N M, Ralchenko V G 2001 Diam. Relat. Mater. 10 593

    [9]

    Zhang Z F, Jia X P, Liu X B, Hu M H, Li Y, Yan B M, Ma H A 2012 Chin. Phys. B 21 038103

    [10]

    Liang Z Z, Kanda H, Jia X P, Ma H A, Zhu P W, Guan Q F, Zang C Y 2006 Carbon 44 913

    [11]

    Chrenko R M, McDonald R S, Darrow K A 1967 Nature 213 474

    [12]

    Runciman W A, Carter T 1971 Solid St. Commun. 9 315

    [13]

    Woods G S, Collins A T 1983 J. Phys. Chem. Solids 44 471

    [14]

    Palyanov Y N, Kupriyanov I N, Borzdov Y M, Sokol A G, Khonkhryakov A F 2009 Cryst. Growth. Des. 9 2922

    [15]

    Meng Y F Yan C S, Lai J, Krasnicki S, Shu H Y, Yu T, Liang Q, Mao H K, Hemley R J 2008 Proc. Natl. Acad. Sci. USA 105 17620

    [16]

    Charles S J, Butler J E, Feygelson B N, Newton M E, Carroll D I, Steeds J W, Darwish H, Yan C S, Mao H K, Hemley R J 2004 Phys. Status Solidi A 201 2473

    [17]

    Borzdov Y, Pal'yanov Y, Kupriyanov I, Gusev V, Khokhryakov A, Sokol A, Efremov A 2002 Diam. Relat. Mater. 11 1863

    [18]

    Kiflawi I, Fisher D, Kanda H, Sittas G 1996 Diam. Relat. Mater. 5 1516

    [19]

    Zhang Z F, Jia X P, Sun S S, Liu X B, Li Y, Yan B M, Ma H A 2013 Int. J. Refractory Metals Hard Mater. 38 111

    [20]

    Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z F, Ma H A 2012 Chin. Phys. B 21 058101

    [21]

    Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Bex P 2002 J. Phys. Condens. Matter 14 11269

    [22]

    Coudberg P, Catherine Y 1987 Thin Solid Films 146 93

    [23]

    McNamara K M, Williams B E, Gleason K K, Scruggs B E 1994 J. Appl. Phys. 76 2466

    [24]

    Field J E 1992 The Properties of Natural and Synthetic Diamond (London: Academic) pp36-41, 81-179

    [25]

    Kanda H, Akaishi M Yamaoka S 1999 Diam. Relat. Mater. 8 1441

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Publishing process
  • Received Date:  05 October 2013
  • Accepted Date:  30 October 2013
  • Published Online:  05 February 2014
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