Generation of shallow nitrogen-vacancy centers in diamond with carbon ion implantation

He Jian; Jia Yan-Wei; Tu Ju-Ping; Xia Tian; Zhu Xiao-Hua; Huang Ke; An Kang; Liu Jin-Long; Chen Liang-Xian; Wei Jun-Jun; Li Cheng-Ming

doi:10.7498/aps.71.20220794

Abstract

The shallow nitrogen-vacancy center of diamond exhibits excellent sensitivity and resolution in the magnetic detection and quantum sensing areas. Compared with other methods, low-energy carbon ion implantation does not need high-purity diamond nor introduce new impurity atoms, but the formation mechanism of nitrogen-vacancy center is not clear. In this work, shallow nitrogen-vacancy centers are created in the diamond by low energy carbon ion implantation and vacuum annealing, and the transformation mechanism of nitrogen-vacancy centers in diamond is studied by Raman spectroscopy, X-ray photoelectron spectroscopy, and positron annihilation analysis. The results show that shallow nitrogen-vacancy centers can be obtained by carbon ion implantation combined with vacuum annealing. After implantation, superficial layer of diamond shows the damage zone including lattice distortion and amorphous carbon, and carbon-vacancy cluster defects (carbon atoms are surrounded by vacancy clusters) are generated. In the vacuum annealing process, the damaged area gradually transforms into the diamond structure through the recovery of the distortion area and the solid-phase epitaxy of the amorphous carbon area, accompanied by the continuous dissociation of carbon-vacancy cluster defects. When samples are annealed at 850 and 900 ℃, the structure of the damaged area is partially repaired. While annealing at 950 ℃, not only the damaged layer is basically recovered, but also nitrogen atoms capture the single vacancy obtained by the dissociation of carbon vacancy clusters, forming the nitrogen-vacancy centers.

Keywords:

Authors and contacts

1.
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
2.
Shunde Graduate School, University of Science and Technology Beijing, Foshan 528399, China

Corresponding author: Liu Jin-Long, liujinlong@ustb.edu.cn ; Li Cheng-Ming, chengmli@mater.ustb.edu.cn

Funds: Project supported by the National Magnetic Confinement Fusion Science Program of China (Grant No. 2019YFE03100200), the Natural Science Foundation of Beijing, China (Grant No. 4192038), and the State Key Laboratory of Particle Detection and Electronics Program of China (Grant No. SKLPDE-KF-202202).

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References

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Cited By

图 1 碳离子注入金刚石的深度及损伤的SRIM模拟

Figure 1. SRIM simulation of depth and damage of carbon ion implantation in diamond.

DownLoad: Full-Size Img PowerPoint

图 2 金刚石在碳离子注入前后的拉曼光谱及 PL 光谱　(a) 原始金刚石拉曼光谱; (b) 原始金刚石的PL光谱; (c) 碳离子注入后金刚石的拉曼光谱; (d) 碳离子注入后金刚石的PL光谱

Figure 2. Raman spectra and PL spectra of the sample before and after implantation: (a) Raman spectrum of original sample; (b) PL spectrum of original sample; (c) Raman spectra of sample after implantation; (d) PL spectrum of sample after implantation.

DownLoad: Full-Size Img PowerPoint

图 3 (a) 不同温度退火后金刚石表面的拉曼光谱; (b) 不同温度退火后金刚石表面的PL光谱

Figure 3. (a) Raman spectra of diamond surfaces after annealing at different temperatures; (b) PL spectra of diamond surfaces after annealing at different temperatures.

DownLoad: Full-Size Img PowerPoint

图 4 离子注入后金刚石的XPS图谱及其退火后的XPS图谱　(a) 注入金刚石的XPS谱; (b) S1 (850 ℃)退火金刚石的XPS谱; (c) S2 (900 ℃)金刚石的XPS谱; (d) S3 (950 ℃)金刚石的XPS谱

Figure 4. XPS spectra of samples after ion implantation and its XPS spectra after annealing: (a) XPS spectra of implanted sample; (b) XPS spectra of the sample annealed at 850 ℃; (c) XPS spectra of the sample annealed at 900 ℃; (d) XPS spectra of the sample annealed at 950 ℃.

DownLoad: Full-Size Img PowerPoint

图 5 金刚石碳离子注入及退火后多普勒展宽谱　(a) 金刚石碳离子注入及退火后S-E分布曲线; (b) 金刚石碳离子注入及退火后W-E分布曲线

Figure 5. Doppler broadening spectra after diamond carbon ion implantation and annealing: (a) S-E curves after carbon ion implantation and annealing; (b) W-E curves after carbon ion implantation and annealing.

DownLoad: Full-Size Img PowerPoint

图 6 金刚石碳离子注入及退火后W-S参数变化

Figure 6. Changes of W-S parameters after diamond carbon ion implantation and annealing.

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表 1 XPS谱的拟合结果

Table 1. Fitting results of XPS spectra.

Samples
C-ions S1(850 ℃) S2(900 ℃) S3(950 ℃)

μ(sp²) 91.5% 53.5% 25.3% 13.6%
μ(sp³) 8.5% 46.5% 74.7% 86.4%

DownLoad: CSV

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[2]	Casola F, Van Der Sar T, Yacoby A 2018 Nat. Rev. Mater. 3 17088 Google Scholar
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[4]	Kim D, Ibrahim M I, Foy C, Trusheim M E, Han R, Englund D R 2019 Nat. Electron. 2 284 Google Scholar
[5]	Chen M, Meng C, Zhang Q, Duan C, Shi F, Du J 2018 Natl. Sci. Rev. 5 346 Google Scholar
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[8]	Ninio Y, Waiskopf N, Meirzada I, Romach Y, Haim G, Yochelis S, Banin U, Bar-Gill N 2021 ACS Photonics 8 1917 Google Scholar
[9]	Perona Martínez F, Nusantara A C, Chipaux M, Padamati S K, Schirhagl R 2020 ACS Sensors 5 3862 Google Scholar
[10]	Zhang C, Yuan H, Zhang N, Xu L X, Li B, Cheng G D, Wang Y, Gui Q, Fang J C 2017 J. Phys. D: Appl. Phys. 50 505104 Google Scholar
[11]	Watanabe A, Nishikawa T, Kato H, Fujie M, Fujiwara M, Makino T, Yamasaki S, Herbschleb E D, Mizuochi N 2021 Carbon 30 294 Google Scholar
[12]	Ishiwata H, Nakajima M, Tahara K, Ozawa H, Iwasaki T, Hatano M 2017 Appl. Phys. Lett. 24 043103 Google Scholar
[13]	Momenzadeh S A, Stohr R J, De Oliveira F F, Brunner A, Denisenko A, Yang S, Reinhard F, Wrachtrup J 2015 Nano Lett. 15 165 Google Scholar
[14]	Bourgeois E, Londero E, Buczak K, Hruby J, Gulka M, Balasubramaniam Y, Wachter G, Stursa J, Dobes K, Aumayr F, Trupke M 2017 Phys. Rev. B 95 041402 Google Scholar
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[17]	Sumikura H, Hirama K, Nishiguchi K, Shinya A, Notomi M 2020 APL Mater. 8 031113 Google Scholar
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[19]	Orwa J O, Santori C, Fu K M, Gibson B, Simpson D, Aharonovich I, Stacey A, Cimmino A, Balog P, Markham M, Twitchen D 2011 J. Appl. Phys. 109 083530 Google Scholar
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[21]	Ohno K, Joseph Heremans F, de las Casas C F, Myers B A, Alemán B J, Bleszynski Jayich A C, Awschalom D D 2014 Appl. Phys. Lett. 105 052406 Google Scholar
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[23]	Woods, G S, Van Wyk J A, Collins A T 1990 Philos. Mag. 62 589
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[25]	张礼红, 成斌, 张杰, 张丽娟, 郭卫峰, 刘建党, 张礼楠, 叶邦角 2021 中国科学: 物理学力学天文学 42 1217 Google Scholar Zhang L H, Cheng B, Zhang J, Zhang L J, Guo W F, Liu J D, Zhang L N, Ye B J 2021 Sci. Chin. Sin. :Phys. , Mech. Astron. 42 1217 Google Scholar
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[35]	Guagliardo P, Byrne K, Chapman J, Sudarshan K, Samarin S, Williams J 2013 Diamond Relat. Mater. 37 37 Google Scholar
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[37]	胡远超, 曹兴忠, 李玉晓, 张鹏, 靳硕学, 卢二阳, 于润升, 魏龙, 王宝义 2015 物理学报 64 247804 Google Scholar Hu Y C, Cao X Z, Li Y X, Zhang P, Jin S X, Lu E Y, Yu R S, Wei L, Wang B Y 2015 Acta Phys. Sin. 64 247804 Google Scholar
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[40]	Siemek K, Dryzek J, Mitura-Nowak M, Lomygin A, Schabikowski M 2020 Nucl. Instrum. Methods Phys. Res., Sect. B 465 73 Google Scholar
[41]	Agulló-Rueda F, Gordillo N, Ynsa M D, Maira A, Cañas J, Ramos M A 2017 Carbon 123 334 Google Scholar

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