Microstructure and photoluminescence of ZnO：Cd nanorods synthesized by hydrothermal method

Wang Chang-Yuan; Yang Xiao-Hong; Ma Yong; Feng Yuan-Yuan; Xiong Jin-Long; Wang Wei

doi:10.7498/aps.63.157701

Abstract

High-quality ZnO and Cd-doped ZnO nanorods with different Cd-doping concentrations are synthesized by using the hydrothermal method. Microstructures and photoluminescence of the samples are systematically investigated by SEM, X-ray diffraction (XRD), Raman scattering spectrum and photoluminescence (PL) spectrum. Results of XRD analysis indicate that ZnO and ZnO:Cd crystallites exhibit a hexagonal wurtzite structure. SEM shows that the nanorods become smaller due to Cd doping. There is an internal tension which induces the decrease of optical band gap in Cd-doped nanorods. Cd-doping increases the intensity of violet emission peak near 2.90 eV and the blue emission peak located at 2.67 eV appears when the doping concentration is up to 2%. This study can be used for developing blue-violet-emitting devices.

Keywords:

Authors and contacts

1.
The Chongqing City Key Laboratory of Optoelectronic Functional Materials, Optical Engineering Key Lab, Chongqing Normal University, Chongqing 400047, China
Funds: Project supported by the Doctoral Foundation of Chongqing Normal University, China (Grant No. 10XLB001), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106129).

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Cited By

[1]	Xia Y Y, Brault J, Damilano B, Chenot S, Vennegue's P, Nemoz M, Teisseire M, Leroux M, Obrecht R, Robin I C, Santailler J L, Feuillet G, Chauvea J M 2013 Appl. Phys. Express 6 0421011
[2]	Cheng P F, Li S T, Wang H 2013 Chin. Phys. B 22 107701
[3]
[4]
[5]	Gao H X, Hu R, Yang Y T 2012 Chin. Phys. Lett. 29 017305
[6]
[7]	Nie M Zhao Y Zeng YJiang Y J 2013 Acta Phys. Sin. 62 176801 (in Chinese) [聂朦, 赵艳, 曾勇, 蒋毅坚 2013 物理学报 62 176801]
[8]
[9]	Lv B, Zhou X, Linghu R F, Wang X L, Yang X D 2011 Chin. Phys. B 20 036104
[10]	Yang C, Wang X P, Wang L J, Pang X F, Li S K, Jing L W 2013 Chin. Phys. B 22 088101
[11]
[12]
[13]	Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501
[14]
[15]	Hosseinmardi A, Shojaee N, Keyanpour R M, Ebadzadeh T 2012 Cera. Inter. 38 1975
[16]
[17]	Zhong J B, Li J Z, He X Y, Zeng J, Lu Y, Hu W, Lin K 2012 Curr. Appl. Phys. 12 998
[18]	Lee W, Shin S, Jung D R, Kim J, Nahm C, Moon T, Park B 2012 Curr. Appl. Phys. 12 628
[19]
[20]
[21]	Li H, Liu E T, Chan F Y F, Lu Z, Chen R 2011 Mater. Lett. 65 3440
[22]	Wang C Z, Chen Z, He Y, Li L Y, Zhang D 2009 Appl. Surf. Sci 255 6881
[23]
[24]	Chen R Q, Zou C W, Bian J M, Sandhu A, Gao W 2011 Nanotech. 22 1057061
[25]
[26]	Yakuphanoglu F, Ilican S, Caglar M, Caglar Y 2010 Super. Micro. 47 732
[27]
[28]
[29]	Zhang J, Zhao S Q, Zhang K, Zhou J Q, Cai Y F 2012 Nanscale Res. Lett. 7 405
[30]
[31]	Vijayalakshmi S, Venkataraj S, Jayavel R 2008 J. Phys. D: Appl. Phys. 41 245403
[32]	Tang X, Lv H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta. Phys. Sin 57 1066 (in Chinese) [唐鑫, 吕海峰, 马春雨, 赵纪军, 张庆瑜 2008 物理学报 57 1066]
[33]
[34]
[35]	Huang Y Q, Liu M D, Li Z, Zeng Y K, Liu S B 2003 Mater. Sci. Eng. B 97 111
[36]	Zang H, Wang Z G, Pang L L, Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B 2010 Acta. Phys. Sin. 59 4831 (in Chinese) [臧航, 王志光, 庞立龙, 魏孔芳, 姚存峰, 申铁龙, 孙建荣, 马艺准, 缑洁, 盛彦斌, 朱亚滨 2010 物理学报 59 4831]
[37]
[38]	Deng Q, Ma Y, Yang X H, Ye L J, Zhang X Z, Zhang Q, Fu H W 2012 Acta. Phys. Sin. 61 247701 (in Chinese) [邓泉, 马勇, 杨晓红, 叶利娟, 张学忠, 张起, 付宏伟 2012 物理学报 61 247701]
[39]
[40]	Zhang F H, Zhang Z Y, Zhang W H, Xue S Q, Yun J N, Yan J F 2008 IEEE 2 681
[41]
[42]
[43]	Jaffe J E, Snyder J A, Lin Z J, Hess A C 2000 Phys. Rev. B 62 1660
[44]	Bacaksiz E, Altunbas M, zc-elik S O, Oltulu O, Tomakin M, Yılmaz S 2009 Mater. Sci. Semicond. Process. 12 118
[45]
[46]	Bai L N, Zheng B J, Lian J S, Jiang Q 2012 Solid. State. Sci. 14 698
[47]
[48]	Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943
[49]
[50]
[51]	Vanheusden K, Seager C H, Warren W L, Tallant D R 1996 Appl. Phys. Lett. 68 403
[52]	Yang P D, Yan H Q, Mao S, Russo R, Johnson J, Saykally R, Morris N, Pham J, He R R, Choi H J 2002 Adv. Funct. Mater 12 323
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Vol. 63, Issue 15 - 2014-08-05

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