Search

x
中国物理学会期刊
Advanced Search
Xu Huo-Xi, Xu Jing-Ping. Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimizationJ. Acta Physica Sinica, 2016, 65(3): 037301. DOI: 10.7498/aps.65.037301
Citation: Xu Huo-Xi, Xu Jing-Ping. Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimizationJ. Acta Physica Sinica, 2016, 65(3): 037301. DOI: 10.7498/aps.65.037301
shu

Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization

Acta Phys. Sin., 2016, 65(3): 037301.
DOI: 10.7498/aps.65.037301
CSTR: 32037.14.aps.65.037301
PDF
导出引用

  • Abstract

    Authors and contacts

    References

Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return