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As a new group-IV semiconductor alloy, Ge1-xSnx is a very promising material for applications in photonic and microelectronic devices. In this work, high-quality germanium-tin (Ge1-xSnx) alloys are grown on Ge(001) substrates by molecular beam epitaxy, with x=1.5%, 2.4%, 2.8%, 5.3%, and 14%. The Ge1-xSnx alloys are characterized by high resolution X-ray diffraction (HR-XRD), Rutherford backscattering spectra (RBS), and transmission electron micrograph (TEM). For the samples with Sn composition x 5.3%, the Ge1-xSnx alloys each exhibit a very high crystalline quality. The ratio of channel yield to random yield (min) in the RBS spectrum is only about 5%, and the full width at half maximum (FWHM) of the Ge1-xSnx peak in HR-XRD curve is 100''. For the sample with x=14%, the crystalline quality of the alloy is degraded and FWHM is 264.6''.
[1] Soref R A, Friedman L 1993 Superlattice Microst 14 189
[2] Kouvetakis J, Menendez J, Chizmeshya A V G 2006 Annu. Rev. Mater. Res. 36 497
[3] Chen R, Lin H, Huo Y, Hitzman C, Kamins T I, Harris J S 2011 Appl. Phys. Lett. 99 181125
[4] Sun G, Soref R A, Cheng H H 2010 Opt. Express 18 19957
[5] Roucka R, Mathews J, Beeler R T, Toll J, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 98 061109
[6] Mathews J, Beeler R T, Toll J, Xu C, Roucka R, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 97 221912
[7] Su S, Cheng B, Xue C, Wang W, Cao Q, Xue H, Hu W, Zhang G, Zuo Y, Wang Q 2011 Opt. Express 19 6400
[8] Sun G, Soref R A, Cheng H H 2010 J. Appl. Phys. 108 033107
[9] Sau J D, Cohen M L 2007 Phys. Rev. B 75 045208
[10] Nakatsuka O, Tsutsui N, Shimura Y, Takeuchi S, Sakai A, Zaima S 2010 Jpn. J. Appl. Phys. 49 04DA10
[11] Han G, Su S, Zhan C L, Zhou Q, Yang Y, Wang L, Guo P, Wang W, Wong C P, Shen Z X, Cheng B, Yeo Y -C 2011 IEEE International Electron Devices Meeting Washington, DC, USA, December 5-7, 2011 p402
[12] Han G, Su S, Wang L, Wang W, Gong X, Yang Y, Ivana, Guo P, Guo C, Zhang G, Pan J, Zhang Z, Xue C, Cheng B, Yeo Y -C 2012 Symposia on VLSI Technology, Hilton Havaiian Village, Honolulu, Hawaii, June 12-14, 2012 p97
[13] Su S, Wang W, Cheng B, Zhang G, Hu W, Xue C, Zuo Y, Wang Q 2011 J. Cryst. Growth 317 43
[14] Su S J, Wang W, Zhang G Z, Hu W X, Bai A Q, Xue C L, Zuo Y H, Cheng B W, Wang Q M 2011 Acta Phys. Sin. 60 028101 (in Chinese) [苏少坚, 汪巍, 张广泽, 胡炜玄, 白安琪, 薛春来, 左玉华, 成步文, 王启明 2011 物理学报 60 028101]
[15] Bratland K A, Foo Y L, Spila T, Seo H S, Haasch R T, Desjardins P, Greene J E 2005 J. Appl. Phys. 97 044904
[16] Kasper E, Werner J, Oehme M, Escoubas S, Burle N, Schulze J 2012 Thin Solid Films 520 3195
[17] Lin H, Chen R, Huo Y, Kamins T I, Harris J S 2012 Thin Solid Films 520 3927
[18] Gurdal O, Desjardins P, Carlsson J R A, Taylor N, Radamson H H, Sundgren J E, Greene J E 1998 J. Appl. Phys. 83 162
[19] Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W, Kouvetakis J 2002 Appl. Phys. Lett. 81 2992
[20] Vincent B, Gencarelli F, Bender H, Merckling C, Douhard B, Petersen D H, Hansen O, Henrichsen H H, Meersschaut J, Vandervorst W, Heyns M, Loo R, Caymax M 2011 Appl. Phys. Lett. 99 152103
[21] Su S J, Cheng B W, Xue C L, Zhang D L, Zhang G Z, Wang Q M 2012 Acta Phys. Sin. 61 176104 (in Chinese) [苏少坚, 成步文, 薛春来, 张东亮, 张广泽, 王启明 2012 物理学报 61 176104]
[22] Su S, Wang W, Cheng B, Hu W, Zhang G, Xue C, Zuo Y, Wang Q 2011 Solid State Commun. 151 647
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[1] Soref R A, Friedman L 1993 Superlattice Microst 14 189
[2] Kouvetakis J, Menendez J, Chizmeshya A V G 2006 Annu. Rev. Mater. Res. 36 497
[3] Chen R, Lin H, Huo Y, Hitzman C, Kamins T I, Harris J S 2011 Appl. Phys. Lett. 99 181125
[4] Sun G, Soref R A, Cheng H H 2010 Opt. Express 18 19957
[5] Roucka R, Mathews J, Beeler R T, Toll J, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 98 061109
[6] Mathews J, Beeler R T, Toll J, Xu C, Roucka R, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 97 221912
[7] Su S, Cheng B, Xue C, Wang W, Cao Q, Xue H, Hu W, Zhang G, Zuo Y, Wang Q 2011 Opt. Express 19 6400
[8] Sun G, Soref R A, Cheng H H 2010 J. Appl. Phys. 108 033107
[9] Sau J D, Cohen M L 2007 Phys. Rev. B 75 045208
[10] Nakatsuka O, Tsutsui N, Shimura Y, Takeuchi S, Sakai A, Zaima S 2010 Jpn. J. Appl. Phys. 49 04DA10
[11] Han G, Su S, Zhan C L, Zhou Q, Yang Y, Wang L, Guo P, Wang W, Wong C P, Shen Z X, Cheng B, Yeo Y -C 2011 IEEE International Electron Devices Meeting Washington, DC, USA, December 5-7, 2011 p402
[12] Han G, Su S, Wang L, Wang W, Gong X, Yang Y, Ivana, Guo P, Guo C, Zhang G, Pan J, Zhang Z, Xue C, Cheng B, Yeo Y -C 2012 Symposia on VLSI Technology, Hilton Havaiian Village, Honolulu, Hawaii, June 12-14, 2012 p97
[13] Su S, Wang W, Cheng B, Zhang G, Hu W, Xue C, Zuo Y, Wang Q 2011 J. Cryst. Growth 317 43
[14] Su S J, Wang W, Zhang G Z, Hu W X, Bai A Q, Xue C L, Zuo Y H, Cheng B W, Wang Q M 2011 Acta Phys. Sin. 60 028101 (in Chinese) [苏少坚, 汪巍, 张广泽, 胡炜玄, 白安琪, 薛春来, 左玉华, 成步文, 王启明 2011 物理学报 60 028101]
[15] Bratland K A, Foo Y L, Spila T, Seo H S, Haasch R T, Desjardins P, Greene J E 2005 J. Appl. Phys. 97 044904
[16] Kasper E, Werner J, Oehme M, Escoubas S, Burle N, Schulze J 2012 Thin Solid Films 520 3195
[17] Lin H, Chen R, Huo Y, Kamins T I, Harris J S 2012 Thin Solid Films 520 3927
[18] Gurdal O, Desjardins P, Carlsson J R A, Taylor N, Radamson H H, Sundgren J E, Greene J E 1998 J. Appl. Phys. 83 162
[19] Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W, Kouvetakis J 2002 Appl. Phys. Lett. 81 2992
[20] Vincent B, Gencarelli F, Bender H, Merckling C, Douhard B, Petersen D H, Hansen O, Henrichsen H H, Meersschaut J, Vandervorst W, Heyns M, Loo R, Caymax M 2011 Appl. Phys. Lett. 99 152103
[21] Su S J, Cheng B W, Xue C L, Zhang D L, Zhang G Z, Wang Q M 2012 Acta Phys. Sin. 61 176104 (in Chinese) [苏少坚, 成步文, 薛春来, 张东亮, 张广泽, 王启明 2012 物理学报 61 176104]
[22] Su S, Wang W, Cheng B, Hu W, Zhang G, Xue C, Zuo Y, Wang Q 2011 Solid State Commun. 151 647
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