Synthesis of bilayer graphene via chemical vapor deposition and its optoelectronic devices

Yang Yun-Chang; Wu Bin; Liu Yun-Qi

doi:10.7498/aps.66.218101

Abstract

Due to its unique properties, graphene is a promising two-dimensional material in optoelectronic and energy applications. While the mobility of single layer graphene is extremely high, it has a zero bandgap. This feature restricts various applications of graphene in the field of semiconductor devices. Bilayer graphene, despite the nature of zero bandgap in its pristine form, can be tuned to open bandgap via a dual-gated vertical electrical field in a controlled manner. However, the size and layer number of mechanically exfoliated and liquid phase exfoliated graphene are poorly controlled. Controllable synthesis of large-sized bilayer graphene is an important research direction. This review summarizes a series of work including the controlled synthesis of bilayer graphene by chemical vapor deposition method and bilayer graphene devices. Specifically, growth mechanism of bilayer graphene is dependent on the type of supporting substrate and experimental condition. In the case of Ni substrate, bilayer graphene is grown along the segregation route. On the other hand, graphene growth on Cu is a surface-mediated process due to the extremely low solubility of C in Cu bulk. Depending on the concentration ratio between CH4 and H2, the growth mode of bilayer graphene can be tuned to be similar to Volmer-Weber or Stranski-Krastanov mode, in which the second layer is either grown under or above the first graphene layer. The dynamic growth of bilayer graphene can be further understood by a chemical gate effect and the process in a confined space. Moreover, here in this paper we present several approaches to realize the better control of bilayer graphene growth by modulating the experimental conditions. In terms of device applications for bilayer graphene, in this review we mention two typical applications including field-effect-transistors and hot-electron bolometers. Compared with conventional silicon-based hot-electron bolometer, the bilayer graphene based hot-electron bolometer has a small heat capacity and weak electron-phonon coupling, leading to high sensitivity, fast response, and small thermal noise-equivalent power. Such a bilayer graphene bolometer shows an exceptionally low noise-equivalent power and intrinsic speed three to five orders of magnitude higher than commercial silicon bolometers and superconducting transition-edge sensors at similar temperatures. Finally, the outlook and challenge for future research are also given. While significant progress has been made in the past several years, the controlled growth of bilayer or multi-layer graphene is still a key challenge, and the growth mechanism of bilayer graphene is not yet understood clearly. There is still much room for controlling graphene layer numbers, twisted angles, size, quality, and yield by optimizing the conditions. On the other hand, for the device applications of bilayer graphene, it is highly desired to develop high-performance bilayer graphene-based electronic devices.

Keywords:

Authors and contacts

1.
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;
2.
University of Chinese Academy of Sciences, Beijing 100190, China

Corresponding author: Wu Bin, wubin@iccas.ac.cn;liuyq@iccas.ac.cn ; Liu Yun-Qi, wubin@iccas.ac.cn;liuyq@iccas.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 21633012, 21273243, 51233006, 61390500), the National Key RD Program of China (Grant No. 2016YFA0200101), the National Basic Research Program of China (Grant Nos. 2013CB933500, 2013CBA01602), the Beijing Municipal Science and Technology Commission, China (Grant No. Z161100002116025), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB12030100).

References

[1]	Novoselov K S, Geim A K, Morozov S, Jiang D, Katsnelson M, Grigorieva I, Dubonos S, Firsov A 2005 Nature 438 197
[2]	Hernandez Y, Nicolosi V, Lotya M, Blighe F M, Sun Z, De S, McGovern I T, Holland B, Byrne M, Gun'Ko Y K, Boland J J 2008 Nat. Nanotech. 3 563
[3]	Hass J, Varchon F, Millan-Otoya J E, Sprinkle M, Sharma N, de Heer W A, Berger C, First P N, Magaud L, Conrad E H 2008 Phys. Rev. Lett. 100 125504
[4]	Cai J, Ruffieux P, Jaafar R, Bieri M, Braun T, Blankenburg S, Muoth M, Seitsonen A P, Saleh M, Feng X, Mllen K 2010 Nature 466 470
[5]	Ta H Q, Perello D J, Duong D L, Han G H, Gorantla S, Nguyen V L, Bachmatiuk A, Rotkin S V, Lee Y H, Rmmeli M H 2016 Nano Lett. 16 6403
[6]	Li Y, Wu B, Guo W, Wang L, Li J, Liu Y 2017 Nanotechnology 28 265101
[7]	Geng D, Wu B, Guo Y, Huang L, Xue Y, Chen J, Yu G, Jiang L, Hu W, Liu Y 2012 Proc. Natl Acad. Sci. USA 109 7992
[8]	Hao Y, Wang L, Liu Y, Chen H, Wang X, Tan C, Nie S, Suk J W, Jiang T, Liang T, Xiao J, Ye W, Dean C R, Yakobson B I, McCarty K F, Kim P, Hone J, Colombo L, Ruoff R S 2016 Nat. Nanotech. 11 426
[9]	Hao Y, Bharathi M S, Wang L, Liu Y, Chen H, Nie S, Wang X, Chou H, Tan C, Fallahazad B, Ramanarayan H, Magnuson C W, Tutuc E, Yakobson B I, McCarty K F, Zhang Y, Kim P, Hone J, Colombo L, Ruoff R S 2013 Science 342 720
[10]	Zhou H, Yu W J, Liu L, Cheng R, Chen Y, Huang X, Liu Y, Wang Y, Huang Y, Duan X 2013 Nat. Commun. 4 2096
[11]	Liu L, Zhou H, Cheng R, Yu W J, Liu Y, Chen Y, Shaw J, Zhong X, Huang Y, Duan X 2012 ACS Nano 6 8241
[12]	Gong Y, Zhang X, Liu G, Wu L, Geng X, Long M, Cao X, Guo Y, Li W, Xu J, Sun M, Lu L, Liu L 2012 Adv. Funct. Mater. 22 3153
[13]	Yan Z, Peng Z, Sun Z, Yao J, Zhu Y, Liu Z, Ajayan P M, Tour J M 2011 ACS Nano 5 8187
[14]	Peng Z, Yan Z, Sun Z, Tour J M 2011 ACS Nano 5 8241
[15]	Xue Y, Wu B, Guo Y, Huang L, Jiang L, Chen J, Geng D, Liu Y, Hu W, Yu G 2011 Nano Res. 4 1208
[16]	Ago H, Ito Y, Mizuta N, Yoshida K, Hu B, Orofeo C M, Tsuji M, Ikeda K I, Mizuno S 2010 ACS Nano 4 7407
[17]	Wu T, Zhang X, Yuan Q, Xue J, Lu G, Liu Z, Wang H, Wang H, Ding F, Yu Q, Xie X, Jiang M 2016 Nat. Mater. 15 43
[18]	Yan K, Peng H, Zhou Y, Li H, Liu Z 2011 Nano Lett. 11 1106
[19]	Yang C, Wu T, Wang H, Zhang G, Sun J, Lu G, Niu T, Li A, Xie X, Jiang M 2016 Small 12 2009
[20]	Tang S, Wang H, Wang H S, Sun Q, Zhang X, Cong C, Xie H, Liu X, Zhou X, Huang F, Chen, X, Yu T, Ding F, Xie X, Jiang M 2015 Nat. Commun. 6 6499
[21]	Guermoune A, Chari T, Popescu F, Sabri S S, Guillemette J, Skulason H S, Szkopek T, Siaj M 2011 Carbon 49 4204
[22]	Li Q, Zhao Z, Yan B, Song X, Zhang Z, Li J, Wu X, Bian Z, Zou X, Zhang Y, Liu Z 2017 Adv. Mater. 29 1701325
[23]	Xue Y, Wu B, Jiang L, Guo Y, Huang L, Chen J, Tan J, Geng D, Luo B, Hu W, Yu G, Liu Y 2012 J. Am. Chem. Soc. 134 11060
[24]	Partoens B, Peeters F M 2006 Phys. Rev. B 74 075404
[25]	Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E 2006 Science 313 951
[26]	Liu W, Li H, Xu C, Khatami Y, Banerjee K 2011 Carbon 49 4122
[27]	Li X, Cai W, Colombo L, Ruoff R S 2009 Nano Lett. 9 4268
[28]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R, Wang F 2009 Nature 459 820
[29]	Graf D, Molitor F, Ensslin K, Stampfer C, Jungen A, Hierold C, Wirtz L 2007 Nano Lett. 7 238
[30]	Sato Y, Takai K, Enoki T 2011 Nano Lett. 11 3468
[31]	Yan J, Kim M H, Elle J A, Sushkov A B, Jenkins G S, Milchberg H W M, Fuhrer M S, Drew H D 2012 Nat. Nanotech. 7 472

Cited By

[1]	Novoselov K S, Geim A K, Morozov S, Jiang D, Katsnelson M, Grigorieva I, Dubonos S, Firsov A 2005 Nature 438 197
[2]	Hernandez Y, Nicolosi V, Lotya M, Blighe F M, Sun Z, De S, McGovern I T, Holland B, Byrne M, Gun'Ko Y K, Boland J J 2008 Nat. Nanotech. 3 563
[3]	Hass J, Varchon F, Millan-Otoya J E, Sprinkle M, Sharma N, de Heer W A, Berger C, First P N, Magaud L, Conrad E H 2008 Phys. Rev. Lett. 100 125504
[4]	Cai J, Ruffieux P, Jaafar R, Bieri M, Braun T, Blankenburg S, Muoth M, Seitsonen A P, Saleh M, Feng X, Mllen K 2010 Nature 466 470
[5]	Ta H Q, Perello D J, Duong D L, Han G H, Gorantla S, Nguyen V L, Bachmatiuk A, Rotkin S V, Lee Y H, Rmmeli M H 2016 Nano Lett. 16 6403
[6]	Li Y, Wu B, Guo W, Wang L, Li J, Liu Y 2017 Nanotechnology 28 265101
[7]	Geng D, Wu B, Guo Y, Huang L, Xue Y, Chen J, Yu G, Jiang L, Hu W, Liu Y 2012 Proc. Natl Acad. Sci. USA 109 7992
[8]	Hao Y, Wang L, Liu Y, Chen H, Wang X, Tan C, Nie S, Suk J W, Jiang T, Liang T, Xiao J, Ye W, Dean C R, Yakobson B I, McCarty K F, Kim P, Hone J, Colombo L, Ruoff R S 2016 Nat. Nanotech. 11 426
[9]	Hao Y, Bharathi M S, Wang L, Liu Y, Chen H, Nie S, Wang X, Chou H, Tan C, Fallahazad B, Ramanarayan H, Magnuson C W, Tutuc E, Yakobson B I, McCarty K F, Zhang Y, Kim P, Hone J, Colombo L, Ruoff R S 2013 Science 342 720
[10]	Zhou H, Yu W J, Liu L, Cheng R, Chen Y, Huang X, Liu Y, Wang Y, Huang Y, Duan X 2013 Nat. Commun. 4 2096
[11]	Liu L, Zhou H, Cheng R, Yu W J, Liu Y, Chen Y, Shaw J, Zhong X, Huang Y, Duan X 2012 ACS Nano 6 8241
[12]	Gong Y, Zhang X, Liu G, Wu L, Geng X, Long M, Cao X, Guo Y, Li W, Xu J, Sun M, Lu L, Liu L 2012 Adv. Funct. Mater. 22 3153
[13]	Yan Z, Peng Z, Sun Z, Yao J, Zhu Y, Liu Z, Ajayan P M, Tour J M 2011 ACS Nano 5 8187
[14]	Peng Z, Yan Z, Sun Z, Tour J M 2011 ACS Nano 5 8241
[15]	Xue Y, Wu B, Guo Y, Huang L, Jiang L, Chen J, Geng D, Liu Y, Hu W, Yu G 2011 Nano Res. 4 1208
[16]	Ago H, Ito Y, Mizuta N, Yoshida K, Hu B, Orofeo C M, Tsuji M, Ikeda K I, Mizuno S 2010 ACS Nano 4 7407
[17]	Wu T, Zhang X, Yuan Q, Xue J, Lu G, Liu Z, Wang H, Wang H, Ding F, Yu Q, Xie X, Jiang M 2016 Nat. Mater. 15 43
[18]	Yan K, Peng H, Zhou Y, Li H, Liu Z 2011 Nano Lett. 11 1106
[19]	Yang C, Wu T, Wang H, Zhang G, Sun J, Lu G, Niu T, Li A, Xie X, Jiang M 2016 Small 12 2009
[20]	Tang S, Wang H, Wang H S, Sun Q, Zhang X, Cong C, Xie H, Liu X, Zhou X, Huang F, Chen, X, Yu T, Ding F, Xie X, Jiang M 2015 Nat. Commun. 6 6499
[21]	Guermoune A, Chari T, Popescu F, Sabri S S, Guillemette J, Skulason H S, Szkopek T, Siaj M 2011 Carbon 49 4204
[22]	Li Q, Zhao Z, Yan B, Song X, Zhang Z, Li J, Wu X, Bian Z, Zou X, Zhang Y, Liu Z 2017 Adv. Mater. 29 1701325
[23]	Xue Y, Wu B, Jiang L, Guo Y, Huang L, Chen J, Tan J, Geng D, Luo B, Hu W, Yu G, Liu Y 2012 J. Am. Chem. Soc. 134 11060
[24]	Partoens B, Peeters F M 2006 Phys. Rev. B 74 075404
[25]	Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E 2006 Science 313 951
[26]	Liu W, Li H, Xu C, Khatami Y, Banerjee K 2011 Carbon 49 4122
[27]	Li X, Cai W, Colombo L, Ruoff R S 2009 Nano Lett. 9 4268
[28]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R, Wang F 2009 Nature 459 820
[29]	Graf D, Molitor F, Ensslin K, Stampfer C, Jungen A, Hierold C, Wirtz L 2007 Nano Lett. 7 238
[30]	Sato Y, Takai K, Enoki T 2011 Nano Lett. 11 3468
[31]	Yan J, Kim M H, Elle J A, Sushkov A B, Jenkins G S, Milchberg H W M, Fuhrer M S, Drew H D 2012 Nat. Nanotech. 7 472

[1]	Jiang Yang-Yang, Xia Xiao-Shuang, Li Jian-Bo. Four-wave mixing properties in bilayer graphene nanosystem. Acta Physica Sinica, 2023, 72(12): 126801. doi: 10.7498/aps.72.20230012
[2]	Zhou Chang, Gong Rui, Feng Xiao-Bo. Theoretical studies on optical absorption in twisted bilayer graphene under vertical electric field. Acta Physica Sinica, 2022, 71(5): 054203. doi: 10.7498/aps.71.20211406
[3]	. Theoretical studies on optical absorption in twisted bilayer graphene under vertical electric field. Acta Physica Sinica, 2021, (): . doi: 10.7498/aps.70.20211406
[4]	Liang Qi, Wang Ru-Zhi, Yang Meng-Qi, Wang Chang-Hao, Liu Jin-Wei. Preparing GaN nanowires on Al₂O₃ substrate without catalyst and its optical property. Acta Physica Sinica, 2020, 69(8): 087801. doi: 10.7498/aps.69.20191923
[5]	Wang Wen-Xun, Ren Yan-Biao, Zhang Shi-Chao, Zhang Lin-Cai, Qi Jing-Bo, He Xiao-Wu. Preparation of three-dimensional graphene foam with controllable defects by closed-environment chemical vapor deposition method and composite electrode electrochemical performance. Acta Physica Sinica, 2020, 69(14): 148101. doi: 10.7498/aps.69.20200454
[6]	Wang Wen-Jie, Kang Zhi-Lin, Song Qian, Wang Xin, Deng Jia-Jun, Ding Xun-Lei, Che Jian-Tao. Effect of layer variation on the electronic structure of stacked MoS_2(1-x) Se_2x alloy. Acta Physica Sinica, 2018, 67(24): 240601. doi: 10.7498/aps.67.20181494
[7]	Huang Jing-Wen, Luo Li-Qiong, Jin Bo, Chu Shi-Jin, Peng Ru-Fang. Synthesis and photoluminescence property of hexangular star MoSe2 bilayer. Acta Physica Sinica, 2017, 66(13): 137801. doi: 10.7498/aps.66.137801
[8]	Li Hao, Fu Zhi-Bing, Wang Hong-Bin, Yi Yong, Huang Wei, Zhang Ji-Cheng. Preperetions of bi-layer and multi-layer graphene on copper substrates by atmospheric pressure chemical vapor deposition and their mechanisms. Acta Physica Sinica, 2017, 66(5): 058101. doi: 10.7498/aps.66.058101
[9]	Wu Xiao-Ping, Liu Jin-Yang, Lin Li-Mei, Zheng Wei-Feng, Qu Yan, Lai Fa-Chun. Preparation and characteristics of ZnO nanoflowers. Acta Physica Sinica, 2015, 64(20): 207802. doi: 10.7498/aps.64.207802
[10]	Liu Hao, Xue Yu-Ming, Qiao Zai-Xiang, Li Wei, Zhang Chao, Yin Fu-Hong, Feng Shao-Jun. Progress of application research on Cu2ZnSnS4 thin film and its device. Acta Physica Sinica, 2015, 64(6): 068801. doi: 10.7498/aps.64.068801
[11]	Han Lin-Zhi, Zhao Zhan-Xia, Ma Zhong-Quan. Process parameters of large single crystal graphene prepared by chemical vapor deposition. Acta Physica Sinica, 2014, 63(24): 248103. doi: 10.7498/aps.63.248103
[12]	He Qiong, Xu Xiang-Dong, Wen Yue-Jiang, Jiang Ya-Dong, Ao Tian-Hong, Fan Tai-Jun, Huang Long, Ma Chun-Qian, Sun Zi-Qiang. Growth mechanism and optoelectronic properties of vanadium oxide films prepared by Sol-Gel. Acta Physica Sinica, 2013, 62(5): 056802. doi: 10.7498/aps.62.056802
[13]	He Long, Song Yun. Numerical study of the superconductor-insulator transition in double-layer graphene driven by disorder. Acta Physica Sinica, 2013, 62(5): 057303. doi: 10.7498/aps.62.057303
[14]	Yuan Ze, Gao Hong, Xu Ling-Ling, Chen Ting-Ting, Lang Ying. Fabrication of In-Al codoped ZnO nanobunches photodetectors. Acta Physica Sinica, 2012, 61(5): 057201. doi: 10.7498/aps.61.057201
[15]	Jia Xi, Liu Ai-Ping, Liu Yang-Yi, Tang Wei-Hua, Wang Jun-Wei. Synthesis and growth mechanism study of SnO2 micro/nanomaterials. Acta Physica Sinica, 2009, 58(4): 2572-2577. doi: 10.7498/aps.58.2572
[16]	Zhang Yong-Ju, Yu Sen-Jiang, Ge Hong-Liang, Wu Liang-Neng, Cui Yu-Jian. Growth mechanism and ordered structures of iron films sputter-deposited on silicone oil surfaces. Acta Physica Sinica, 2006, 55(10): 5444-5450. doi: 10.7498/aps.55.5444
[17]	Peng Ying-Cai, M. Ikeda, S. Miyazaki. Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition. Acta Physica Sinica, 2003, 52(12): 3108-3113. doi: 10.7498/aps.52.3108
[18]	Ding Pei, Liang Er-Jun, Zhang Hong-Rui, Liu Yi-Zhen, Liu Hui, Guo Xin-Yong, Du Zu-Liang. Growth mechanism and Raman spectroscopic study of “interlinked-cone" shaped CNx nanotubes. Acta Physica Sinica, 2003, 52(1): 237-241. doi: 10.7498/aps.52.237
[19]	Wang Yin-Shu, Sun Ping, Ding Shuo, Luo Xu-Hui, Li Na, Wang Ruo-Zhen. . Acta Physica Sinica, 2002, 51(12): 2892-2895. doi: 10.7498/aps.51.2892
[20]	HU YING. SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD. Acta Physica Sinica, 2001, 50(12): 2452-2455. doi: 10.7498/aps.50.2452

Catalog

Vol. 66, Issue 21 - 2017-11-05

Metrics

Abstract views: 7515
PDF Downloads: 309
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板