Recent progress of a new type diluted magnetic semiconductors  with independent charge and spin doping

Deng Zheng; Zhao Guo-Qiang; Jin Chang-Qing

doi:10.7498/aps.68.20191114

Abstract

Due to the potential applications for spintronics devices, diluted ferromagnetic semiconductors (DMS) have received extensive attention for decades. However, in classical Ⅲ–Ⅴ based DMS material, such as (Ga,Mn)As, heterovalent (Ga³⁺, Mn²⁺) doping results in lack of individual control of carrier and spin doping, and seriously limited chemical solubility. The two difficulties prevent furtherincrease of the Curie temperature of the Ⅲ–Ⅴ based DMS. To overcome these difficulties, a series of new types of DMS with independent spin and charge doping have been synthesized, such as Ⅰ–Ⅱ–Ⅴ based LiZnAs and Ⅱ–Ⅱ–Ⅴ based (Ba,K)(Zn,Mn)₂As₂. In these new materials, isovalent (Zn,Mn) substitution is only spin doping, while charge is independently doped by heterovalentsubstitution of non-magnetic elements. As a result (Ba,K)(Zn,Mn)₂As₂ obtains the reliable record of Curie temperature (230 K) among DMS in which ferromagnetic ordering is mediated by itinerate carriers. In this review, we summarize the recent development of the new DMS materials with following aspects: 1) the discovery and synthesis of several typical new DMS materials; 2) physical properties studies with muon spin relaxation and in-situ high pressure techniques; 3) single crystal growth, Andreev reflection junction based on single crystal and measurements of spin polarization.

Keywords:

Authors and contacts

1.
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
3.
Songshan Lake Materials Laboratory, Dongguan 523808, China

Corresponding author: Jin Chang-Qing, jin@iphy.ac.cn

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2017YFB0405703, 2018YFA03057001) and the National Natural Science Foundation of China (Grant No. 11534016).

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References

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Cited By

图 1 (a) (Ga,Mn)As的晶体结构, 其中Mn同时引入电荷和自旋; (b) Li(Zn,Mn)As的晶体结构, 其中Mn仅引入自旋, 电荷来自Li含量的变化^[12]

Figure 1. (a) Crystal structure of (Ga,Mn)As, in which dependent charge and spin doping by Mn²⁺ dopant; (b) crystal structure of Li(Zn,Mn)As, in which spin is doped by isovalent (Zn,Mn) substitution while charge is doped by controlling Li concentration^[12].

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图 2 (a)不同Mn含量Li_1.1(Zn,Mn)As的M(T)曲线; (b)不同Mn含量Li_1.1(Zn,Mn)As的M(H)曲线, 其中灰色的磁滞回线对应了上方的横坐标; (c)样品Li_1.1(Zn_0.95Mn_0.05)As在低温下的霍尔电阻, 15 K以下表现出了明显的反常霍尔效应^[12]

Figure 2. (a) Temperature dependence of magnetization of Li_1.1(Zn₁_－_xMn_x)As; (b) field dependence of magnetization of Li_1.1(Zn₁_－_xMn_x)As at various tempeartures; (c) Hall resistance of Li_1.1(Zn_0.95Mn_0.05)As and the anomalous Hall effect below 15 K^[12].

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图 3 (a) BZA的晶体结构中, Mn引入自旋, K引入电荷; (b) Li(Zn,Mn)As中[Zn/MnAs₄]四面体的间距; (c) BZA中[Zn/MnAs₄]四面体的间距^[17]

Figure 3. (a) Crystal structure of BZA, in which spin is doped by isovalent (Zn,Mn) substitution while charge is doped by (Ba,K)substitution; (b) distance of nearest [Zn/MnAs₄] tetrahedra (4.20 Å) in Li(Zn,Mn)As; (c) distance of nearest [Zn/MnAs₄] tetrahedra (2.91 Å) in BZA^[17].

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图 4 (a)不同K, Mn含量(Ba,K)(Zn,Mn)₂As₂的ρ(T)曲线; (b)样品(Ba_0.7K_0.3)(Zn_0.85Mn_0.15)₂As₂的M(T)和M(H), M(T)中上升的拐点即为230 K的居里温度点; (c)样品(Ba_0.85K_0.15)(Zn_0.9Mn_0.1)₂As₂在低温下的霍尔电阻, 50 K以下表现出了明显的反常霍尔效应^[17]

Figure 4. (a) Temperature dependence of resistivity of (Ba,K)(Zn,Mn)₂As₂; (b) temperature dependence of magnetization and field dependence of magnetization (inset) of (Ba_0.7K_0.3)(Zn_0.85Mn_0.15)₂As₂, the upturn point, namely Curie temperature is 230 K; (c) Hall resistance of (Ba_0.85K_0.15)(Zn_0.9Mn_0.1)₂As₂ and the anomalous Hall effect below 50 K^[17].

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图 5 μSR测试结果汇总　(a) ZF模式下Li_1.1(Zn_0.95Mn_0.05)As的时间谱; (b) ZF模式与WTF模式下Li_1.1(Zn_0.95Mn_0.05)As铁磁含量的拟合结果, 两者互相吻合^[12]; (c) ZF模式下(Ba_0.80K_0.20)(Zn_0.9Mn_0.1)₂As₂的时间谱; (d) ZF模式与WTF模式下(Ba_0.80K_0.20)(Zn_0.9Mn_0.1)₂As₂铁磁含量的拟合结果, 铁磁体积含量与SQUID的测量结果吻合^[17]

Figure 5. Results of muon spin relaxation measurements: (a) Time spectra of Li_1.1(Zn_0.95Mn_0.05)As in ZF process; (b) the volume fraction of the magnetically ordered region in Li_1.1(Zn_0.95Mn_0.05)As, derived from ZF and WTF spectra^[12]; (c) time spectra of (Ba_0.80K_0.20)(Zn_0.9Mn_0.1)₂As₂ in ZF process; (d) the volume fraction of the magnetically ordered region in (Ba_0.80K_0.20)(Zn_0.9Mn_0.1)₂As₂, derived from ZF and WTF spectra^[17].

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图 6 (Ba_0.75K_0.25)(Zn_0.95Mn_0.05)₂As₂的高压表征　(a)常压下As的K边XAS和XMCD谱; (b) 2 K时高压原位的As-K边XMCD谱, 插图为XMCD谱的最高值随压力的变化; (c) 不同压力的电阻-温度曲线; (d)常温下XES谱随压力的演化, 插图为ΔE'随压力变化^[26,34]

Figure 6. In-situ high pressure properties of (Ba_0.75K_0.25)(Zn_0.95Mn_0.05)₂As₂: (a) As K-edge XAS near edge structure (black curve) and XMCD (blue curve) data takenat T = 2 K and ambient pressure; (b) pressure-dependent As K-edge XMCD signal, the inset is XMCD peak intensity normalized to unity at ambient pressure, dreen data points are compression data, while the red data point was obtained on decompression; (c) temperature-dependent resistance plots at various pressures; (d) X-ray emission spectra at high pressures and room temperature, the spectra were shifted in the vertical for clarity, red solid lines are fits using three Gaussian functions; left corner inset: energy difference ΔE'^[26,34].

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图 7 (Ba_0.80K_0.20)(Zn_0.95Mn_0.05)₂As₂的晶格常数随压力的变化, 左下角插图显示了ZnAs层间As-As距离, 右上角插图显示了MnAs₄四面体内的As-Zn-As夹角α^[34]

Figure 7. Lattice parameters of (Ba_0.80K_0.20)(Zn_0.95Mn_0.05)₂As₂ as a function of pressure. Data were normalized to unity at ambient pressure. Left corner inset: crystal structure of (Ba,K)(Zn,Mn)₂As₂, and the pressure dependence of interlayer As-As distance d. Upper right corner inset: MnAs₄ tetrahedron geometry, and the pressure dependence of As-Mn-As bond angle α in the MnAs₄ tetrahedron^[34].

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图 8 (a)不同温度下Pb-BZA结的安德烈夫反谱以及拟合结果^[47]; (b)低温下Pb-BNZA结的安德烈夫反谱以及拟合结果^[48]

Figure 8. (a) The Andreev reflection spectra of Pb-BZA heterjunction and the best BTK fit^[47]; (b) Andreev reflection spectra of Pb-BNZA and the best BTK fit^[48].

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图 9 (a) 2θ模式下BZA单晶的XRD谱, 插图为单晶照片以及晶体结构示意图; (b)沿不同方向测量的BZA单晶的M(T)曲线; (c)以BZA单晶为基础构造的安德烈夫反射结示意图^[47]

Figure 9. (a) XRD pattern of BZA single crystal with 2θ process, the insets are photographic of the single crystal and crystal structure of BZA; (b) temperature dependence of magnetization of the single crystal along ab-plane and c-axis; (c) sketch of the Andreev reflection junction based on BZA single crystal^[47].

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图 10 三类不同功能材料的结构示意图　(a)超导体(Ba,K)Fe₂As₂; (b)铁磁性稀磁半导体BZA; (c)反铁磁体BaMn₂As₂^[17]

Figure 10. Crystal structure and lattice parameters of (a) superconductor (Ba,K)Fe₂As₂; (b) ferromagnetic DMS BZA; (c) antiferromagnetic BaMn₂As₂^[17].

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图 11 稀磁半导体发展路线图^[11]

Figure 11. Roadmap on DMS^[11].

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[4]	ZHAO J 2016 Chin. Sci. Bull. 61 1401 Google Scholar
[5]	常凯, 夏建白 2004 物理 33 414 Google Scholar Chang K, Xia J B 2004 Physics 33 414 Google Scholar
[6]	Ohno H 1998 Science 281 951 Google Scholar
[7]	Dietl T 2000 Science 287 1019 Google Scholar
[8]	Kennedy D, Norman C 2005 Science 309 75 Google Scholar
[9]	Chen L, Yang X, Yang F, Zhao J, Misuraca J, Xiong P, von Molnar S 2011 Nano Lett. 11 2584 Google Scholar
[10]	赵建华, 邓加军, 郑厚植 2007 物理学进展 27 109 Zhao J H, Deng J J, Zheng H Z 2007 Prog. Phys. 27 109
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[13]	邓正, 赵侃, 靳常青 2013 物理 42 682 Google Scholar Deng Z, Zhao K, Jin C Q 2013 Physics 42 682 Google Scholar
[14]	Han W, Zhao K, Wang X, Liu Q, Ning F, Deng Z, Liu Y, Zhu J, Ding C, Man H, Jin C 2013 Sci. China: Phys. Mech. Astron. 56 2026 Google Scholar
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Vol. 68, Issue 16 - 2019-08-20

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