Progress of the study on carrier scattering mechanisms of silicon/germanium field effect transistors

Zhao Yi; Li Jun-Kang; Zheng Ze-Jie

doi:10.7498/aps.68.20191146

Abstract

As the feature size of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) continues to decrease, large numbers of new problems appear. Techniques such as strain project, new channel materials and new device structures are considered by academics and industry to be effective ways to continue to improve device performance. In this paper, the scattering mechanism of carriers in the device channel is studied from three aspects: strain technique, new channel material and new structure device: (1) strain technique: Biaxial tensile strain can change carrier distribution among different energy levels, which affects Coulomb scattering and Coulomb mobility. Furthermore, from the TEM image, it is found that biaxial tensile reduces the channel surface roughness for Si nMOSFET, leading an enhancement of electron mobility. However, no such similar phenomena were observed in pMOSFET. Based on this, a new method for calculating the mobility of MOSFET surface roughness scattering using TEM image has been proposed. (2) New channel material: In the germanium (Ge) transistors with different crystal faces, the scattering mechanisms of electron under high field conditions are different. The phonon scattering dominates the Ge(100) transistor, while the surface roughness scattering dominates the Ge(110), (111) transistors. This result is quite different from Si MOSFET. Therefore, a unified model for the scattering mechanism of electron in Ge nMOSFET has been proposed. In SiGe transistors, alloy scattering mainly play a role in the region with relatively small effective electric field (E_eff). The strength of alloy scattering would be weakened in high field and could be decreased by reducing the thickness of SiGe layer. (3) New structure devices: In ultra-thin body germanium (GeOI) transistors, carrier transport is influenced by high- k /channel interfaces, as well as Ge channel/buried oxide (BOX) interface. As the Ge layer thickness decreases, carrier distribution is closer to the interfaces, which intensifies Coulomb scattering and surface roughness scattering. As a result, the mobility in GeOI transistor decreases as the thickness scaling. In addition, the distribution of electron in different energy valleys changes with the thickness decrease in Ge layer, which affects the scattering of electrons. When the Ge film is lower than 10 nm, a part of electron in the L valley will move to the Γ valley, causing the decrease of electron effective mass and increasing the electron mobility.

Keywords:

Authors and contacts

1.
College of Electronic Engineering and Information Science, Zhejiang University, Hangzhou 310027, China
2.
Zhijiang Laboratory, Hangzhou 310000, China

Corresponding author: Zhao Yi, yizhao@zju.edu.cn

Funds: Project supported by the Key Program of the National Natural Science Foundation of Zhejiang province, China (Grant No. Z19F040002), and the Key Research and Development Program of Zhejiang province, China (Grant No. 2019C01158)

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References

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Cited By

图 1 集成电路技术节点随时间的演进, 图中提取了90 nm到10 nm技术节点

Figure 1. Evolution of integrated circuit technology nodes: from 90 nm to 10 nm.

DownLoad: Full-Size Img PowerPoint

图 2 (a) 拉伸应变和衬底浓度对空穴子能带结构的影响; (b) 双轴拉伸应变对电子空穴μ_it影响的示意图^[17]

Figure 2. (a) Effects of tensile biaxial strain and N_sub on the hole subband structure; (b) schematic diagram of the interpretation for the effect of biaxial tensile strain on μ_it of electrons and holes^[17].

DownLoad: Full-Size Img PowerPoint

图 3 (a) 应变对电子和空穴表面粗糙度散射的影响; (b) 无应变硅和应变硅沟道表面粗糙度^[20]

Figure 3. (a) Low-temperature electron and hole mobility versus N_s for Si and s-Si with different amounts of strain; (b) TEM photographs of Si and s-Si (10% Ge and 35% Ge) Si/SiO₂ interfaces^[20].

DownLoad: Full-Size Img PowerPoint

图 4 不同晶面的Si及Ge nMOSFET中的电子输运模型^[20]

Figure 4. Electron transport models in Si and Ge nMOSFETs with different crystal faces^[20].

DownLoad: Full-Size Img PowerPoint

图 5 (a) SiGe量子阱pMOSFET在300 K和15 K下的迁移率; (b) 根据实验结果计算出的SiGe量子阱pMOSFET中空穴μ_alloy+phonon随N_inv的变化^[23]

Figure 5. (a) Extracted effective hole mobilities of the QW p-MOSFET at 15 and 300 K; (b) μ_phonon+alloy obtained from the extracted hole mobility at 300 and 15 K^[23].

DownLoad: Full-Size Img PowerPoint

图 6 超薄GeOI 晶体管中的载流子输运模型^[24]

Figure 6. Carrier transport model in ultra-thin GeOI MOSFETs^[24].

DownLoad: Full-Size Img PowerPoint

图 7 GeOI pMOSFET空穴有效迁移率随V_BG的变化情况^[23]

Figure 7. Hole mobility of UTB GeOI pMOSFETs with applying different V_BG^[23].

DownLoad: Full-Size Img PowerPoint

图 8 (a) 电子迁移率与Ge厚度关系; (b) 不同Ge厚度下电子在能级中的分布情况^[26]

Figure 8. (a) T_body dependence of effective electron mobility characteristics; (b) band structure of UTB GeOI nMOSFET under different channel thickness^[26].

DownLoad: Full-Size Img PowerPoint

[1]	Uchida K, Takagi S 2003 Appl. Phys. Lett. 82 2916 Google Scholar
[2]	Wu H, Wu W, Si M, Peide D Y 2015 IEEE International Electron Devices Meeting (IEDM) Washington DC, Dec. 7−9, 2015 p2.1.1
[3]	Nayak D K, Woo J C S, Park J S, Wang K L, MacWilliams K P 1993 Appl. Phys. Lett. 62 2853 Google Scholar
[4]	刘畅、卢继武、吴汪然、唐晓雨、张睿、俞文杰、王曦、赵毅 2015 物理学报 62 167305 Liu C, Lu J W, Wu W R, Tang X Y, Zhang R, Yu W J, Wang X, Zhao Y 2015 Acta Phys. Sin. 62 167305
[5]	赵毅、万星拱 2006 物理学报 55 3003 Zhao Y, Wan X G 2006 Acta Phys. Sin. 55 3003
[6]	Lee C H, Nishimura T, Tabata T, Lu C, Zhang W F, Nagashio K, Toriumi A 2013 IEEE International Electron Devices Meeting (IEDM) Washington DC, Dec. 9−11, 2013 p2.3.1
[7]	Cheng R, Yin L, Wu H, Yu X, Zhang Y, Zheng Z, Wu W, Chen B, Peide D Y, Liu X, Zhao Y 2017 IEEE Elec. Devi. Lett. 38 434 Google Scholar
[8]	Chu M, Sun Y, Aghoram U, Thompson S E 2009 Annu. Rev. Mater. Res. 39 203 Google Scholar
[9]	Antoniadis D A, Aberg I, Chleirigh C N, Nayfeh O M, Khakifirooz A, Hoyt J L 2006 IBM J. Res. Dev. 50 363 Google Scholar
[10]	Lee C H, Nishimura T, Tabata T, Kita K, Toriumi A 2011 IEEE Trans. Elec. Dev. 58 1295
[11]	Zhang, R, Huang P C, Lin J C, Taoka N, Takenaka M, Takagi S 2013 IEEE Trans. Elec.n Dev. 60 927
[12]	Zhang R, Chern W, Yu X, Takenaka, M, Hoyt J L, Takagi, S 2013 IEEE International Electron Devices Meeting (IEDM) Washington DC, Dec. 9−11 2013 p26.1.1
[13]	Yeo Y C, Gong X, van Dal M J H, Vellianitis G, Passlack M 2015 IEEE International Electron Devices Meeting (IEDM) Washington D C, Dec. 7−9,2015 p2.4.1
[14]	van Dal M J H, Duriez B, Vellianitis G, Doornbos G, Oxland R, Holland M, Diaz C H 2014 IEEE International Electron Devices Meeting (IEDM) San Francisco, Dec. 7−9, 2014 p9.5.1
[15]	Choi Y K, Asano K, Lindert N, Subramanian V, King T J, Bokor J, Hu C 1999 IEEE International Electron Devices Meeting (IEDM) Washington D C, Dec. 5−8, 1999 p919
[16]	Ernst T, Cristoloveanu S, Ghibaudo G, Ouisse T, Horiguchi S, Ono Y, Takahashi Y, Murase K 2003 IEEE Trans. Elec. Dev. 50 830
[17]	Zhao Y, Takenaka M, Takagi S 2009 IEEE Trans. Elec. Dev. 56 1152 Google Scholar
[18]	Weber O, Takagi S 2008 IEEE Trans. Elec. Dev. 55 2386
[19]	Takagi S, Toriumi A, Iwase M, Tango H 1994 IEEE Trans. Elec. Dev. 41 2357 Google Scholar
[20]	Zhao Y, Takenaka M, Takagi S 2009 IEEE Elec. Dev. Lett. 30 987 Google Scholar
[21]	Zhao Y, Matsumoto H, Sato T, Koyama S, Takenaka M, Takagi S 2010 IEEE Trans. Elec. Dev. 57 2057 Google Scholar
[22]	Wu W, Li X, Sun J, Zhang R, Shi Y, Zhao Y 2015 IEEE Trans. Elec. Dev. 62 1136 Google Scholar
[23]	Yu W, Wu W, Zhang B, Liu C, Sun J, Zhai D, Yu Y, Shi Y, Zhao Y, Zhao Q T 2014 IEEE Trans. Elec. Dev. 61 950 Google Scholar
[24]	Yu X, Kang J, Takenaka M, Takagi S 2015 IEEE International Electron Devices Meeting (IEDM) Washington D C, Dec. 7−9, 2015 p2.2.1
[25]	Zheng Z, Yu X, Zhang Y, Xie M, Cheng R, Zhao Y 2018 IEEE Trans. Elec. Dev. 65 895 Google Scholar
[26]	Chang W H, Irisawa T, Ishii H, Hattori H, Ota H, Takagi H, Kurashima Y, Uchida K, Maeda T 2017 IEEE Trans. Elec. Dev. 64 4615 Google Scholar

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