Research progress in rare earth doping photoluminescent ferroelectric thin films

Bao Ding-Hua

doi:10.7498/aps.69.20200738

Abstract

Rare earth doping is an important method to improve the properties of optoelectronic functional materials. Combining rare earth doping ferroelectric materials and rare earth photoluminescence can create new functional properties of ferroelectric materials. For example, choosing and using an appropriate rare earth element to be doped into a bismuth titanate ferroelectric material, the bismuth titanate will exhibit good photoluminescent properties as well as ferroelectric properties. Recently, photoluminescence properties originating from rare earth ions in oxide ferroelectric materials have attracted much attention for possible integrated photoluminescent ferroelectric device applications. In this paper, we briefly review the research status and progress of photoluminescence in rare earth photoluminescent ferroelectric materials, and we place the emphasis on our own research work in photoluminescent ferroelectric thin films such as (Bi,Eu)₄Ti₃O₁₂, (Bi,Er)₄Ti₃O₁₂, and codoped bismuth titanate thin films, and nanocomposite (Bi,Eu)₄Ti₃O₁₂ ferroelectric thin films. Our results show that the rare earth doped bismuth titanate ferroelectric thin films exhibit good photoluminescent and ferroelectric properties due to unique compositions and layered perovskite structure, that the Eu³⁺ fluorescent structure probe can provide a new path for further studying the relationship between structure and property of Eu-doped ferroelectric thin films, that the rare earth photoluminescence can be used to examine the existence of morphotropic phase boundary in certain ferroelectric thin films such as Pr-doped x(K_1/2Bi_1/2)TiO₃-(1－x)(Na_1/2Bi_1/2)TiO₃ thin films, and nanocomposite materials of ZnO nanomaterials, and that Au nanoparticles, Ag nanoparticles with Eu-doped bismuth titanate exhibit obviously enhanced photoluminescent properties.

Keywords:

Authors and contacts

Bao Ding-Hua

State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Corresponding author: Bao Ding-Hua, stsbdh@mail.sysu.edu.cn

FullText HTML : translate this paragraph

References

[1]	Scott J F 2007 Science 315 954 Google Scholar
[2]	Grinberg I, West D V, Torres M, Gou G Y, Stein D M, Wu L Y, Chen G N, Gallo E M, Akbashev A R, Davies P K 2013 Nature 503 509 Google Scholar
[3]	Yan T L, Chen B, Liu G, Niu R P, Shang J, Gao S, Xue W H, Jin J, Yang J R, Li R W 2017 Chin. Phys. B 26 067702 Google Scholar
[4]	Han D L, Uda T, Nose Y, Okajima T, Murata H, Tanaka I, Shinoda K 2012 Adv. Mater. 24 2051 Google Scholar
[5]	Geskus D, Aravazhi S, Garcia-Blanco S M, Pollnau M 2012 Adv. Mater. 24 OP19 Google Scholar
[6]	Zhong T, Kindem J M, Miyazono E, Faraon A 2015 Nat. Commun. 5 8206 Google Scholar
[7]	Park B H, Kang B S, Bu S D, Noh T W, Lee J, Jo W 1999 Nature 401 682 Google Scholar
[8]	Maiwa H, Iizawa N, Togawa D, Hayashi T, Sakamoto W, Yamada M, Hirano S 2003 Appl. Phys. Lett. 82 1760 Google Scholar
[9]	Zhang S T, Zhang X J, Cheng H W, Chen Y F, Liu Z G, Ming N B, Hu X B, Wang J Y 2003 Appl. Phys. Lett. 83 4378 Google Scholar
[10]	Kan D, Anbusathaiah V, Takeuchi I 2011 Adv. Mater. 23 1765 Google Scholar
[11]	Lee Y H, Wu J M, Lai C H 2006 Appl. Phys. Lett. 88 042903 Google Scholar
[12]	Freeman C L, Dawson J A, Harding J H, Ben L B, Sinclair D C 2013 Adv. Funct. Mater. 23 491 Google Scholar
[13]	Tsang M K, Bai G X, Hao J H 2015 Chem. Soc. Rev. 44 1585 Google Scholar
[14]	Zhang Y, Hao J H 2013 J. Appl. Phys. 113 184112 Google Scholar
[15]	Haertling G H 1999 J. Am. Ceram. Soc. 82 797 Google Scholar
[16]	Makovec D, Ule N, Drofenik M 2001 J. Am. Ceram. Soc. 84 1273 Google Scholar
[17]	de Camargo A S S, Botero E R, Andreeta E R M, Garcia D, Eiras J A, Nunes L A O 2005 Appl. Phys. Lett. 86 241112 Google Scholar
[18]	Zheng J J, Lu Y L, Chen X S, Cronin-Golomb M, Zhao J 1999 Appl. Phys. Lett. 75 3470 Google Scholar
[19]	Block B A, Wessels B W 1994 Appl. Phys. Lett. 65 25 Google Scholar
[20]	Wang X S, Xu C N, Yamada H, Nishikubo K, Zheng X G 2005 Adv. Mater. 17 1254 Google Scholar
[21]	Zhang P Z, Shen M R, Fang L, Zheng F G, Wu X L, Shen J C, Chen H T 2008 Appl. Phys. Lett. 92 222908 Google Scholar
[22]	Peng D, Wang X S, Xu C N, Yao X, Lin J. Sun T 2012 J. Appl. Phys. 111 104111 Google Scholar
[23]	Peng D, Wang X S, Xu C N, Yao X, Lin J. Sun T 2013 J. Am. Ceram. Soc. 96 184 Google Scholar
[24]	Ruan, K B, Chen X M, Liang T, Wu G H, Bao D H 2008 J. Appl. Phys. 103 074101 Google Scholar
[25]	Gao F, Ding G J, Zhou H, Wu G H, Qin N, Bao D H 2011 J. Appl. Phys. 109 043106 Google Scholar
[26]	Ruan K B, Chen X M, Liang T, Bao D H 2008 J. Appl. Phys. 103 086104 Google Scholar
[27]	Du X R, Huang W H, Thatikonda S K, Qin N, Bao D H 2019 J. Mater. Sci.- Mater. Electron. 30 13158 Google Scholar
[28]	Pradhan A K, Zhang K, Mohanty S, Dadson J, Hunter D, Loutts G B, Roy U N, Cui Y, Burger A, Wilkerson A L 2005 J. Appl. Phys. 97 023513 Google Scholar
[29]	Driesen K, Tikhomirov V K, Gorlier-Wairand C 2007 J. Appl. Phys. 102 024312 Google Scholar
[30]	Gao F, Wu G H, Zhou H, Bao D H 2009 J. Appl. Phys. 106 126104 Google Scholar
[31]	Ding G J, Gao F, Wu G H, Bao D H 2011 J. Appl. Phys. 109 123101 Google Scholar
[32]	Gao F, Ding G J, Zhou H, Wu G H, Qin N, Bao D H 2011 J. Electrochem. Soc. 158 G128 Google Scholar
[33]	Zhou H, Wu G H, Qin N, Bao D H 2012 J. Am. Ceram. Soc. 95 483 Google Scholar
[34]	Huang W H, He S, Hao A Z, Qin N, Ismail M, Wu J, Bao D H 2018 J. Eur. Ceram. Soc. 38 2328 Google Scholar
[35]	吴晓萍, 刘金养, 林丽梅, 郑卫峰, 瞿燕, 赖发春 2015 物理学报 64 207802 Google Scholar Wu X P, Liu J Y, Lin L M, Zheng W F, Qu Y, Lai F C 2015 Acta Phys. Sin. 64 207802 Google Scholar
[36]	Chong M K, Abiyasa A P, Pita K, Yu S F 2008 Appl. Phys. Lett. 93 151105 Google Scholar
[37]	Chong M K, Vu Q V, Pita K 2010 Electrochem. Solid-State Lett. 13 J50 Google Scholar
[38]	Voora V M, Hofmann T, Brandt M, Lorenz M, Ashkenov N, Grundmann M, Schubert M 2009 Appl. Phys. Lett. 95 082902 Google Scholar
[39]	Wu J, Wang J 2010 J. Appl. Phys. 108 034102 Google Scholar
[40]	Zhou H, Chen X M, Wu G H, Gao F, Qin N, Bao D H 2010 J. Am. Chem. Soc. 132 1790 Google Scholar
[41]	Zhou X Y, Wu G H, Zhou H, Qin N, Bao D H 2013 Ceram. Int. 39 S507 Google Scholar
[42]	Liu X, Zhou H, Wu G H, Bao D H 2011 Appl. Phys. Express 4 032103 Google Scholar
[43]	Su L, Qin N, Xie W, Fu J H, Bao D H 2014 J. Appl. Phys. 116 034101 Google Scholar
[44]	Su L, Qin N, Sa T L, Bao D H 2013 Opt. Express 21 29425 Google Scholar

Cited By

图 1 不同退火温度下BEuT (x = 0.85)薄膜的光学透射率^[24]

Figure 1. Optic transmittance of BEuT (x = 0.85) thin films annealed at different temperatures^[24].

DownLoad: Full-Size Img PowerPoint

图 2 不同退火温度下BEuT (x = 0.85)薄膜的激发谱和发射谱^[24]

Figure 2. Excitation and emission spectra of BEuT (x = 0.85) thin films annealed at different temperatures^[24].

DownLoad: Full-Size Img PowerPoint

图 3 不同Eu掺杂浓度的BEuT薄膜的光致发光谱^[24]

Figure 3. Photoluminescence spectra of BEuT thin films with different Eu³⁺ concentrations^[24].

DownLoad: Full-Size Img PowerPoint

图 4 BEGT和BEuT薄膜的发射谱^[26]

Figure 4. Emission spectra of BEGT and BEuT thin films under exciting wavelength of 350 nm^[26].

DownLoad: Full-Size Img PowerPoint

图 5 Ho/Yb共掺钛酸铋薄膜的上转换发光光谱^[31]

Figure 5. Up-conversion emission spectra of Bi_3.98-_xHo_0.02Yb_xTi₃O₁₂ thin films on fused silica substrates^[31]. The inset shows a photograph of the bright up-conversion green emission of Bi_3.78Ho_0.02Yb_0.2Ti₃O₁₂ thin films excited by 980 nm diode laser.

DownLoad: Full-Size Img PowerPoint

图 6 Ho/Yb共掺钛酸铋薄膜的发光能级机理分析^[31]

Figure 6. Simplified energy level diagram for up-conversion emission of Ho/Yb-codoped bismuth titanate thin films^[31].

DownLoad: Full-Size Img PowerPoint

图 7 Bi_3.79Tm_0.01Yb_0.2Ti_2.99W_0.01O₁₂薄膜的电滞回线^[32]

Figure 7. P-E hysteresis loop of Bi_3.79Tm_0.01Yb_0.2Ti_2.99W_0.01O₁₂ thin films^[32].

DownLoad: Full-Size Img PowerPoint

图 8 Pr掺杂x(K_1/2Bi_1/2)TiO₃-(1－x)(Na_1/2Bi_1/2)TiO₃薄膜的(a)发射光谱和(b)发光强度随Pr掺杂量的变化^[33]

Figure 8. (a) Emission spectra excited at 350 nm UV radiation, and (b) 611 nm red emission intensity as a function of KBT content for Pr³⁺-doped x(K_1/2Bi_1/2)TiO₃-(1－x) (Na_1/2Bi_1/2)TiO₃ thin films^[33]. The inset of (b) shows a photoluminescence photograph of the thin film (x = 0.15).

DownLoad: Full-Size Img PowerPoint

图 9 (a) BEuT/ZnO纳米复合薄膜和(b) BEuT薄膜的发射谱^[40].

Figure 9. Emission spectra of (a) nanocomposite film composed of BEuT matrix and highly c-axis oriented ZnO nanorods and (b) BEuT thin film^[40].

DownLoad: Full-Size Img PowerPoint

[1]	Scott J F 2007 Science 315 954 Google Scholar
[2]	Grinberg I, West D V, Torres M, Gou G Y, Stein D M, Wu L Y, Chen G N, Gallo E M, Akbashev A R, Davies P K 2013 Nature 503 509 Google Scholar
[3]	Yan T L, Chen B, Liu G, Niu R P, Shang J, Gao S, Xue W H, Jin J, Yang J R, Li R W 2017 Chin. Phys. B 26 067702 Google Scholar
[4]	Han D L, Uda T, Nose Y, Okajima T, Murata H, Tanaka I, Shinoda K 2012 Adv. Mater. 24 2051 Google Scholar
[5]	Geskus D, Aravazhi S, Garcia-Blanco S M, Pollnau M 2012 Adv. Mater. 24 OP19 Google Scholar
[6]	Zhong T, Kindem J M, Miyazono E, Faraon A 2015 Nat. Commun. 5 8206 Google Scholar
[7]	Park B H, Kang B S, Bu S D, Noh T W, Lee J, Jo W 1999 Nature 401 682 Google Scholar
[8]	Maiwa H, Iizawa N, Togawa D, Hayashi T, Sakamoto W, Yamada M, Hirano S 2003 Appl. Phys. Lett. 82 1760 Google Scholar
[9]	Zhang S T, Zhang X J, Cheng H W, Chen Y F, Liu Z G, Ming N B, Hu X B, Wang J Y 2003 Appl. Phys. Lett. 83 4378 Google Scholar
[10]	Kan D, Anbusathaiah V, Takeuchi I 2011 Adv. Mater. 23 1765 Google Scholar
[11]	Lee Y H, Wu J M, Lai C H 2006 Appl. Phys. Lett. 88 042903 Google Scholar
[12]	Freeman C L, Dawson J A, Harding J H, Ben L B, Sinclair D C 2013 Adv. Funct. Mater. 23 491 Google Scholar
[13]	Tsang M K, Bai G X, Hao J H 2015 Chem. Soc. Rev. 44 1585 Google Scholar
[14]	Zhang Y, Hao J H 2013 J. Appl. Phys. 113 184112 Google Scholar
[15]	Haertling G H 1999 J. Am. Ceram. Soc. 82 797 Google Scholar
[16]	Makovec D, Ule N, Drofenik M 2001 J. Am. Ceram. Soc. 84 1273 Google Scholar
[17]	de Camargo A S S, Botero E R, Andreeta E R M, Garcia D, Eiras J A, Nunes L A O 2005 Appl. Phys. Lett. 86 241112 Google Scholar
[18]	Zheng J J, Lu Y L, Chen X S, Cronin-Golomb M, Zhao J 1999 Appl. Phys. Lett. 75 3470 Google Scholar
[19]	Block B A, Wessels B W 1994 Appl. Phys. Lett. 65 25 Google Scholar
[20]	Wang X S, Xu C N, Yamada H, Nishikubo K, Zheng X G 2005 Adv. Mater. 17 1254 Google Scholar
[21]	Zhang P Z, Shen M R, Fang L, Zheng F G, Wu X L, Shen J C, Chen H T 2008 Appl. Phys. Lett. 92 222908 Google Scholar
[22]	Peng D, Wang X S, Xu C N, Yao X, Lin J. Sun T 2012 J. Appl. Phys. 111 104111 Google Scholar
[23]	Peng D, Wang X S, Xu C N, Yao X, Lin J. Sun T 2013 J. Am. Ceram. Soc. 96 184 Google Scholar
[24]	Ruan, K B, Chen X M, Liang T, Wu G H, Bao D H 2008 J. Appl. Phys. 103 074101 Google Scholar
[25]	Gao F, Ding G J, Zhou H, Wu G H, Qin N, Bao D H 2011 J. Appl. Phys. 109 043106 Google Scholar
[26]	Ruan K B, Chen X M, Liang T, Bao D H 2008 J. Appl. Phys. 103 086104 Google Scholar
[27]	Du X R, Huang W H, Thatikonda S K, Qin N, Bao D H 2019 J. Mater. Sci.- Mater. Electron. 30 13158 Google Scholar
[28]	Pradhan A K, Zhang K, Mohanty S, Dadson J, Hunter D, Loutts G B, Roy U N, Cui Y, Burger A, Wilkerson A L 2005 J. Appl. Phys. 97 023513 Google Scholar
[29]	Driesen K, Tikhomirov V K, Gorlier-Wairand C 2007 J. Appl. Phys. 102 024312 Google Scholar
[30]	Gao F, Wu G H, Zhou H, Bao D H 2009 J. Appl. Phys. 106 126104 Google Scholar
[31]	Ding G J, Gao F, Wu G H, Bao D H 2011 J. Appl. Phys. 109 123101 Google Scholar
[32]	Gao F, Ding G J, Zhou H, Wu G H, Qin N, Bao D H 2011 J. Electrochem. Soc. 158 G128 Google Scholar
[33]	Zhou H, Wu G H, Qin N, Bao D H 2012 J. Am. Ceram. Soc. 95 483 Google Scholar
[34]	Huang W H, He S, Hao A Z, Qin N, Ismail M, Wu J, Bao D H 2018 J. Eur. Ceram. Soc. 38 2328 Google Scholar
[35]	吴晓萍, 刘金养, 林丽梅, 郑卫峰, 瞿燕, 赖发春 2015 物理学报 64 207802 Google Scholar Wu X P, Liu J Y, Lin L M, Zheng W F, Qu Y, Lai F C 2015 Acta Phys. Sin. 64 207802 Google Scholar
[36]	Chong M K, Abiyasa A P, Pita K, Yu S F 2008 Appl. Phys. Lett. 93 151105 Google Scholar
[37]	Chong M K, Vu Q V, Pita K 2010 Electrochem. Solid-State Lett. 13 J50 Google Scholar
[38]	Voora V M, Hofmann T, Brandt M, Lorenz M, Ashkenov N, Grundmann M, Schubert M 2009 Appl. Phys. Lett. 95 082902 Google Scholar
[39]	Wu J, Wang J 2010 J. Appl. Phys. 108 034102 Google Scholar
[40]	Zhou H, Chen X M, Wu G H, Gao F, Qin N, Bao D H 2010 J. Am. Chem. Soc. 132 1790 Google Scholar
[41]	Zhou X Y, Wu G H, Zhou H, Qin N, Bao D H 2013 Ceram. Int. 39 S507 Google Scholar
[42]	Liu X, Zhou H, Wu G H, Bao D H 2011 Appl. Phys. Express 4 032103 Google Scholar
[43]	Su L, Qin N, Xie W, Fu J H, Bao D H 2014 J. Appl. Phys. 116 034101 Google Scholar
[44]	Su L, Qin N, Sa T L, Bao D H 2013 Opt. Express 21 29425 Google Scholar

[1]	Zhou Xiao-Hong, Yang Qing, Zou Jun-Tao, Liang Shu-Hua. Effects of growth conditions on the microstructures and photoluminescence properties of Ga-doped ZnO films. Acta Physica Sinica, 2015, 64(8): 087803. doi: 10.7498/aps.64.087803
[2]	Zhang Li, Xu Ming, Yu Fei, Yuan Huan, Ma Tao. Crystal structures and optical properties of(Fe, Co)-codoped ZnO thin films. Acta Physica Sinica, 2013, 62(2): 027501. doi: 10.7498/aps.62.027501
[3]	Wu Zhong-Hao, Xu Ming, Duan Wen-Qian. Effects of Fe doping on the crystal structures and photoluminescences of ZnO: Ni thin films prepared by sol-gel method. Acta Physica Sinica, 2012, 61(13): 137502. doi: 10.7498/aps.61.137502
[4]	Wu Yan-Nan, Xu Ming, Wu Ding-Cai, Dong Cheng-Jun, Zhang Pei-Pei, Ji Hong-Xuan, He Lin. Effects of Co and/or Sn doping on crystal structures and optical properties of ZnO thin films. Acta Physica Sinica, 2011, 60(7): 077505. doi: 10.7498/aps.60.077505
[5]	. Effect of microstructure on the ferroelectric properties of Eu-doped Bi4Ti3O12 ferroelectric thin film. Acta Physica Sinica, 2011, 60(2): 027701. doi: 10.7498/aps.60.027701
[6]	Ren Yan-Dong, Lü Shu-Chen. Excitation spectrum intensity adjustment of SrWO4:Eu3+ red phosphors for light-emitting diode. Acta Physica Sinica, 2011, 60(8): 087804. doi: 10.7498/aps.60.087804
[7]	Yang Chang-Hu, Ma Zhong-Quan, Xu Fei, Zhao Lei, Li Feng, He Bo. Raman spectral analysis of TiO2 thin films doped with rare-earth yttrium and lanthanum. Acta Physica Sinica, 2010, 59(9): 6549-6555. doi: 10.7498/aps.59.6549
[8]	Gao Li, Zhang Jian-Min. Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms. Acta Physica Sinica, 2010, 59(2): 1263-1267. doi: 10.7498/aps.59.1263
[9]	Wu Ding-Cai, Hu Zhi-Gang, Duan Man-Yi, Xu Lu-Xiang, Liu Fang-Shu, Dong Cheng-Jun, Wu Yan-Nan, Ji Hong-Xuan, Xu Ming. Synthesis and photoluminescence of (Co, Cu)-doped ZnO thin films. Acta Physica Sinica, 2009, 58(10): 7261-7266. doi: 10.7498/aps.58.7261
[10]	Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng. Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665. doi: 10.7498/aps.57.3661
[11]	Liao Guo-Jin, Yan Shao-Feng, Ba De-Chun. The blue luminescence of cerium doped aluminum oxide thin film. Acta Physica Sinica, 2008, 57(11): 7327-7332. doi: 10.7498/aps.57.7327
[12]	Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai. The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak. Acta Physica Sinica, 2005, 54(12): 5738-5742. doi: 10.7498/aps.54.5738
[13]	Xu Da-Yin, Liu Yan-Ping, He Zhi-Wei, Fang Ze-Bo, Liu Xue-Qin, Wang Yin-Yue. The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate. Acta Physica Sinica, 2004, 53(8): 2694-2698. doi: 10.7498/aps.53.2694
[14]	Li Huo-Quan, Ning Zhao-Yuan, Cheng Shan-Hua, Jiang Mei-Fu. Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering. Acta Physica Sinica, 2004, 53(3): 867-870. doi: 10.7498/aps.53.867
[15]	Wang Qiang, Shen Ming-Rong, Hou Fang, Gan Zhao-Qiang. The effect of baking temperature on the crystal structure and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel processing. Acta Physica Sinica, 2004, 53(7): 2373-2377. doi: 10.7498/aps.53.2373
[16]	Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan. Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica, 2004, 53(1): 204-209. doi: 10.7498/aps.53.204
[17]	Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562. doi: 10.7498/aps.52.2558
[18]	Zhang Xi-Tian, Xiao Zhi-Yan, Zhang Wei-Li, Gao Hong, Wang Yu-Xi, Liu Yi-Chun, Zhang Ji-Ying, Xu Wu. A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films. Acta Physica Sinica, 2003, 52(3): 740-744. doi: 10.7498/aps.52.740
[19]	Peng Ai-Hua, Xie Er-Qing, Jiang Ning, Zhang Zhi-Min, Li Peng, He De-Yan. The photoluminescence characterization of rare earths (Tb, Gd) embedded into por ous silicon. Acta Physica Sinica, 2003, 52(7): 1792-1796. doi: 10.7498/aps.52.1792
[20]	MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE. COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584. doi: 10.7498/aps.50.1580

Catalog

Vol. 69, Issue 12 - 2020-06-20

Metrics

Abstract views: 10368
PDF Downloads: 370
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板