A review of key technologies for epitaxy and chip process of micro light-emitting diodes in display application

Pan Zuo-Jian; Chen Zhi-Zhong; Jiao Fei; Zhan Jing-Lin; Chen Yi-Yong; Chen Yi-Fan; Nie Jing-Xin; Zhao Tong-Yang; Deng Chu-Han; Kang Xiang-Ning; Li Shun-Feng; Wang Qi; Zhang Guo-Yi; Shen Bo

doi:10.7498/aps.69.20200742

Abstract

The continuous miniaturization and integration of pixelated devices have become a main trend in the field of display. Micro light-emitting diode (micro-LED) display is composed of an array of LEDs that are sub-50-micrometers in length. It has huge advantages in brightness, resolution, contrast, power consumption, lifetime, response speed and reliability compared with liquid crystal display (LCD) and organic LED (OLED) display. Consequently, micro-LED display is regarded as the next-generation display technology with high potential applications, such as virtual reality (VR), augmented reality (AR), mobile phones, tablet computers, high-definition TVs and wearable devices. Currently, the combination of commercial 5G communication technology with VR/AR display, ultra high definition video technologies will further prompt the development of micro-LED display industry. However, some basic scientific and technological problems in micro-LED display remain to be resolved. As the chip size shrinks to below 50 μm, some problems that are not serious for large-sized LEDs appear for micro-LEDs. These problems include crystalline defects, wavelength uniformity, full-color emmision, massively tranferring and testing, etc. In the past two decades, various solutions to those problems have been proposed, which have greatly promoted the progress of micro-LED display. In this paper, an overview of micro-LED display since 2000 is given firstly, which includes the main research results and application achievements. Secondly the issues involved in the wafer epitaxy and chip process of micro-LEDs and possible solutions are discussed based on the display application in detail. The surface state induced by the dangling bonds and dry etching damages are concerned for the nonradiative recombination at a low injection level. The remedies are provided for those surface states, such as atomic-layer deposition and neutral beam etching. Some methods to reduce the threading dislocation and suppress the polarization field are summarized for micro-LED epitaxial growth. Moreover, the GaN-based LEDs on Si (100) substrate are also introduced for the future integration of micro-LEDs into the Si-based integrated circuits. As to the wavelength uniformity, the MOCVD equipment and growth technology including the laser treatment are discussed. In the chip processing part, the full-color display, mass transfer and effective inspection technology are discussed. Assembling RGB individual LEDs, quantum dot phosphor material and nanocoloumn LEDs are different routes for full-color display. Their trends in the future are provided. The pick and place, laser lift-off technologies, are strengthened in the massively transferring for micro-LEDs. In the massively and rapidly inspection technologies, the photoluminscence combined with Raman scattering, the electroluminescence combined with digital camera are discussed. Finally, the summary and outlook in these issues are also provided.

Keywords:

Authors and contacts

1.
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2.
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China
3.
Dongguan Institute of Optoelectronics, Peking University, Dongguan 523808, China

Corresponding author: Chen Zhi-Zhong, zzchen@pku.edu.cn

Funds: Project supported by the National Key Research and Development Program, China (Grant No. 2016YFB0400602), the National Natural Science Foundation of China (Grant No. 61674005), the Science and Technology Major Project of Guangdong Province, China (Grant No. 2016B010111001), and the Science and Technology Planning Project of Henan Province, China (Grant No. 161100210200)

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Cited By

图 1 (a)采用不同的侧壁钝化和刻蚀开孔方法的micro-LED电致发光图; (b)分别经过ALD和PECVD钝化处理的20 μm × 20 μm的micro-LED在不同电流密度条件下的光输出功率^[37]; (c)经过ICP刻蚀工艺制备的不同尺寸micro-LED的EQE与电流密度的关系; (d) 经过NBE刻蚀工艺制备的不同尺寸micro-LED的EQE与电流密度的关系^[43]

Figure 1. (a) Electroluminescence images of the micro-LEDs with different sidewall passivation and etch methods at 1 A/cm²; (b) light output power characteristics of ALD and PECVD passivation methods at different current density for 20 μm × 20 μm micro-LEDs^[37]; (c) EQE as a function of current density of micro-LEDs with different sizes fabricated by the ICP process; (d) EQE as a function of current density of micro-LEDs with different sizes fabricated by the NBE process^[43].

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图 2 在具有和不具有单晶石墨烯/SiO₂缓冲层的Si(100)上分别生长单晶GaN薄膜的示意图　(a)在Si(100)上直接生长GaN/AlN, 氮化物在两种不同取向的台面上成核; (b)Si(100)的表面结构; (c)NH₃预处理后转移的石墨烯; (d)石墨烯上的AlN成核岛; (e)在AlN成核层上生长的条状GaN; (f)在具有单晶石墨烯/ SiO₂缓冲层的Si(100)衬底上生长的单畴GaN薄膜^[52]

Figure 2. Schematic diagram of the epitaxy of single-crystalline GaN film on Si(100) without and with single-crystalline-graphene/SiO₂ interlayers: (a) GaN/AlN directly grown on Si(100), Nitrides nucleate on neighboring terraces with two orientations; (b) surface construction of Si(100); (c) transferred graphene after NH₃ pretreatment; (d) AlN nucleation islands on graphene; (e) GaN strips on the AlN nucleation layer; (f) single-domain GaN film on Si(100) substrate with single-crystalline-graphene/SiO₂ interlayers^[52].

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图 3 (a)常规的In_zGa_1–zN-GaN量子阱、两层交错的In_xGa_1–xN/In_yGa_1–yN量子阱和三层交错的In_yGa_1–yN/In_xGa_1–xN/In_y Ga_1–yN量子阱的示意图; (b)基于常规InGaN量子阱和三层交错的InGaN量子阱的LED在波长为520—525 nm范围内光输出功率与电流密度的关系, 插图为三层交错的InGaN量子阱的能带示意图^[69]

Figure 3. (a)Schematics of the conventional In_zGa_1–zN-GaN quantum well (QW), two-layer staggered In_xGa1_1–xN/In_yGa_1–yN QW and three-layer staggered In_yGa_1–yN/In_xGa_1–xN/In_y Ga_1–yN QW structures; (b)light output power vs current density for conventional InGaN QW and three-layer staggered InGaN QW LEDs at λ～520–525 nm, with the band lineups schematic of three-layer staggered InGaN QW^[69].

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图 4 含有Al_yGa_1–yN薄插入层的量子阱的能带图、载流子分布和复合速率　(a)量子阱中Al组分摩尔系数y = 0; (b)量子阱中Al组分摩尔系数y = 0.15; (c)量子阱中Al组分摩尔系数y = 0.3; (d)量子阱中Al组分摩尔系数y = 0; (e)量子阱中Al组分摩尔系数y = 0.15; (f)量子阱中Al组分摩尔系数y = 0.3; (a)—(c)和(d)—(f)的工作电流密度分别设定为2 A/cm²和30 A/cm²^[76]

Figure 4. Band diagrams, the corresponding carrier distribution, and the recombination rate of multi-quantum well (MQW) structures with thin Al_yGa_1–yN interlayers. (a) and (d) show those of the MQWs whose AlN mole fractions were set to y = 0; (b) and (e) show those of the MQWs whose AlN mole fractions were set to y = 0.15; (c) and (f) show those of the MQWs whose AlN mole fractions were set to y = 0.30. The operation current densities in (a)–(c) and (d)–(f) were set to 2 A/cm² and 30 A/cm², respectively^[76].

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图 5 (a)在图形化蓝宝石衬底上生长的半极性GaN示意图; (b)通过取向控制外延在图形化蓝宝石衬底上生长的(20-21) GaN截面的扫描电子显微镜图像; (c) c面和半极性面micro-LED归一化EQE的实验数据和仿真曲线; (d)当电流密度在1—200 A/cm²范围内变化时c面和半极性面micro-LED的峰值波长^[86]

Figure 5. (a)Schematic diagram of the semipolar GaN grown on a patterned sapphire substrate; (b) cross-sectional scanning electron microscope (SEM) image of (20-21) GaN grown on a patterned sapphire substrate by orientation-controlled epitaxy; (c) experimental data and simulation curves for normalized external quantum efficiency of c-plane and semipolar micro-LEDs; (d)peak wavelengths of c-plane and semipolar micro-LEDs in range 1 to 200 A/cm² current density^[86].

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图 6 典型的Micro-LED发光波长在外延片上的分布

Figure 6. Typical distribution of emission wavelengths on wafer of micro-LED.

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图 7 (a)基于200 mm尺寸硅衬底的GaN LED外延片光致发光的伪色彩图; (b)不同发光波长的芯片数量统计^[97]

Figure 7. (a) The pseudo-color image of photoluminescence mapping of the 200 mm GaN-on-Si LED epiwafer; (b) statistics on the number of chips with different emission wavelengths^[97].

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图 8 (a)分立RGB排列法; (b) UV/Blue LED激发量子点法

Figure 8. (a) Assembling RGB individual LEDs; (b) exciting quantum dots by UV/Blue LED.

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图 9 RGB LED的制备过程示意图:　(a)使用选择性区域生长制备蓝光和绿光双色LED; (b)使用粘合剂集成红光LED的过程; (c)最终器件的俯视图和横截面图, RGB LED以蓝光、绿光、红光和白光模式(从上到下)依次显示的显微图像^[107]

Figure 9. Schematic of the fabrication process of the hybrid RGB LEDs: (a) The fabrication process of the blue/green dual-color LEDs using selective area growth; (b) the process for the formation of the red pixels using adhesive bonding; (c) top and cross-sectional views of the final device, microscopic images of the hybrid RGB LEDs in (top to bottom) blue, green, red and white color modes^[107].

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图 10 (a)基于量子点的全彩色显示micro-LED的制备流程^[10]; (b)光刻胶模具的光学显微镜图像, 其尺寸为35 μm × 35 μm、间距约为40 μm, 以及光刻胶模具的激光扫描仪显微镜图像, 其模板高度为11.46 μm^[111]; (c)荧光显微镜下使用最新的超微喷墨印刷技术在玻璃上用红色量子点印刷的图案 (插图描绘了最小线宽) 以及沉积的量子点的原子力显微镜图像^[17]

Figure 10. (a)The process flow of the full-color emission of quantum-dot-based micro-LED display^[10]; (b) optical microscopy image of photoresist square windows with the pixel size of 35 μm × 35 μm, where the pitch is about 40 μm. And the laser scanner microscope image of the photoresist square wall, where the height of the wall is 11.46 μm^[111]; (c) fluorescence microscopy image of patterns printed by red quantum dots on a glass by using the latest SIJ printing system (the inset depicts minimum linewidth) and atomic force microscopy (AFM) image of deposited quantum dots^[17].

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图 11 SEM鸟瞰图和He-Cd激光器激发的不同直径InGaN/GaN纳米柱的发射图像:　(a) 143 nm; (b) 159 nm; (c) 175 nm; (d) 196 nm; (e) 237 nm; (f) 270 nm^[116]; AlN/Si纳米模板上的InGaN纳米柱LED: (g) InGaN纳米柱LED示意图; (h)纳米柱LED的SEM俯视图; (i)纳米柱LED的SEM鸟瞰图^[117]

Figure 11. Bird’s-eye-view SEM and emission images excited by He–Cd laser from InGaN/GaN nanocolumns: (a) 143 nm; (b) 159 nm;(c) 175 nm; (d) 196 nm; (e) 237 nm; (f) 270 nm^[116]; InGaN nanocolumn LEDs on the AlN/Si nanotemplate: (g) schematic of the InGaN nanocolumn LEDs; (h)top-view SEM image of the obtained nanocolumn LEDs; (i) bird’s-eye-view SEM image of the obtained nanocolumn LEDs^[117].

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图 12 (a)转移印模从装有密集微器件的原晶圆上获取微器件阵列; (b)将分散的微器件转移到接收基板上; (c)转移印模的横截面示意图; (d)有效面积为100 mm × 50 mm的转移印模阵列照片, 插图为弹性印模表面的电子显微镜图像^[130]

Figure 12. (a) Transfer stamp retrieves an array of micro-devices from a native wafer with densely packed micro-devices; (b) transfer the dispersed micro-devices onto the receiving substrate; (c) a transfer stamp is illustrated in cross section; (d) a photograph of a transfer stamp with a 100 mm × 50 mm active area, the inset shows an electron micrograph of the surface relief on the elastomer stamp^[130].

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图 13 激光剥离工艺的示意图和氮化镓/蓝宝石界面的能带图^[139]

Figure 13. Schematic of the laser lift-off process along with the band diagram of the GaN/sapphire interface^[139].

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图 14 Micro-LED芯片共焦显微拉曼结合PL检测系统示意图^[146]

Figure 14. Schematic diagram of confocal micro Raman combined PL inspection system of micro-LED^[146].

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图 15 (a) I = 10 μA时, 单个micro-LED芯片对应的亮度的伪彩色图和3D分布; (b) I = 25 μA时, 单个micro-LED芯片对应的亮度的伪彩色图和3D分布; (c) I = 50 μA时, 单个micro-LED芯片对应的亮度的伪彩色图和3D分布; (d) micro-LED阵列中的部分芯片; (e) 这些芯片在不同电压下的平均亮度^[159]

Figure 15. (a) The pseudo color map and 3D distribution of the luminance of the single micro-LED chip, I = 10 μA; (b) The pseudo color map and 3D distribution of the luminance of the single micro-LED chip, I = 25 μA; (c) The pseudo color map and 3D distribution of the luminance of the single micro-LED chip, I =, 50 μA; (d) the certain chips on the micro-LED array; (e) the average luminance of these chips under different voltages^[159].

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表 1 2001—2020年micro-LED显示部分进展

Table 1. Some results of micro-LED display from 2001 to 2020

Year	Substrate	Pixel size/μm	Pixel pitch/μm	Array	Wavelength	Group	Reference
2001	Sapphire	12	50	10 × 10	Blue	Jiang H X, et al.	[5]
2004	Sapphire	20	30	64 × 64	UV	Dawson M D, et al.	[6]
2011	Sapphire	12	15	640 × 480	Green/Blue	Jiang H X, et al.	[13]
2013	Sapphire	50	70	60 × 60	RGB/UV	Liu Z J, et al.	[7]
2014	Sapphire	15	～20	256 × 192	Blue	Lau K M, et al.	[8]
2014	Si	45	100	10 × 10	Blue	Dawson M D, et al.	[14]
2015	Sapphire	35	40	128 × 128	RGB	Kuo H C, et al.	[10]
2017	Si	2	3	—	Blue	Templier F, et al.	[11]
2017	Sapphire	5	10	873 × 500	Green/Blue	Templier F, et al.	[15]
2019	Si	—	40	64 × 36	Blue	Lau K M, et al.	[16]
2019	Sapphire	3 × 10	—	—	RGB	Kuo H C, et al.	[17]
2020	Sapphire	3.6	5.6	—	Green	Wang T, et al.	[12]

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