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Developing the cathode material with high voltage and high capacity is of critical importance in improving the energy density of the battery. Among various cathode materials, LiCoO2, as the first commercialized cathode material for lithium-ion batteries, is still widely concerned by many researchers due to its high output voltage, high volumetric energy density, and excellent cycling performance. However, a series of issues, such as serious capacity fading and performance deterioration, can emerge as cut-off voltage is above 4.5 V. Many strategies have been proposed to stabilize the cycling performance of LiCoO2 at high voltages. Mg doping is considered to be an effective strategy to improve the high voltage cycling stability of LiCoO2 cathode material, but the specific doping form and mechanism of Mg doping still need to be further studied. In this paper, the values of formation energy and the electronic structures of various configurations for Mg doping on Co and Li sites in LiCoO2 are investigated by the first-principles method based on density-functional theory. The calculated results show that the values of formation energy for different doping configurations are different and the substitution of Mg in LiCoO2 is complicated. When the doping concentration is 3.7%, Mg prefers to substitute for the Co site; while the doping concentration increases to 7.4%, Mg can replace not only the Co or Li sites, but also the Co and Li sites simultaneously. Therefore, it should not be simply believed that Mg ion can replace only Co or Li site in LiCoO2, depending on the specific doping situation actually. Furthermore, various doping configurations also exhibit different electronic states, including metallic state and semiconductor state, and what is more, electronic local states in many cases. Therefore, we believe that the Mg doping configuration in LiCoO2 is related closely to the doping amount, and the doping induced electronic structure also has a great difference.
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Keywords:
- LiCoO2 /
- formation energy /
- electronic structure /
- first principles
[1] Li W D, Erickson E M, Manthiram A 2020 Nat. Energy 5 26Google Scholar
[2] Yang X R, Lin M, Zheng G R, et al. 2020 Adv. Funct. Mater. 30 2004664Google Scholar
[3] Aurbach D, Markovsky B, Rodkin A, Levi E, Cohen Y S, Kim H J, Schmidt M 2002 Electrochim. Acta 47 4291Google Scholar
[4] Reddy M V, Jie T W, Jafta C J, et al. 2014 Electrochim. Acta 128 192Google Scholar
[5] Lala S M, Montoro L A, Lemos V, Abbate M, Rosolen J M 2005 Electrochim. Acta 51 7Google Scholar
[6] Abbate M, Lala S M, Montoro L A, Rosolen J M 2004 Phys. Rev. B 70 235101Google Scholar
[7] 杨萧, 倪江锋, 黄友元, 陈继涛, 周恒辉, 张新祥 2006 物理化学学报 22 183Google Scholar
Yang X, Ni J F, Huang Y Y, Chen J T, Zhou H H, Zhang X X 2006 Acta Phys. Chim. Sin. 22 183Google Scholar
[8] Yu J P, Han Z H, Hu X H, Zhan H, Zhou Y H, Liu X J 2014 J. Power Sources 262 136Google Scholar
[9] Wu K, Li Q, Chen M M, Chen D F, Wu M M, Hu Z B, Li F Q, Xiao X L 2018 J. Solid State Electrochem. 22 3725Google Scholar
[10] Myung S T, Kumagai N, Komaba S, Chung H T 2001 Solid State Ionics 139 47Google Scholar
[11] Xie M, Hu T, Yang L, Zhou Y 2016 RSC Adv. 6 63250Google Scholar
[12] Julien C, Camacho-Lopez M A, Lemal M, Ziolkiewicz S 2002 Mater. Sci. Eng. B 95 6Google Scholar
[13] Jin Y H, Xu S G. Li Z T, Xu K H, Ding W X, Song J W, Wang H B, Zhao J Q 2018 J. Electrochem. Soc. 165 A2267Google Scholar
[14] Cheng T, Ma Z T, Qian R C, Wang Y T, Cheng Q, Lyu Y C, Nie A, Guo B K 2021 Adv. Funct. Mater. 31 2001974Google Scholar
[15] Tian T, Zhang T W, Yin Y C, Tan Y H, Song Y H, Lu L L, Yao H B 2020 Nano Lett. 20 677Google Scholar
[16] Zhang J N, Li Q H, Ouyang C Y, et al. 2019 Nat. Energy 4 594Google Scholar
[17] Wang Z G, Wang Z X, Guo H J, Peng W J, Li X H 2015 Ceram. Int. 41 469Google Scholar
[18] Tukamoto H, West A R 1997 J. Electrochem. Soc. 144 3164Google Scholar
[19] Shi S Q, Ouyang C Y, Lei M S, Tang W H 2007 J. Power Sources 171 908Google Scholar
[20] 徐晓光, 魏英进, 孟醒, 王春忠, 黄祖飞, 陈岗 2004 物理学报 53 210Google Scholar
Xu X G, Wei Y J, Meng X, Wang C Z, Huang Z F, Chen G 2004 Acta Phys. Sin. 53 210Google Scholar
[21] Varanasi A K, Bhowmik A, Sarkar T, Waghmare U V, Bharadwaj M D 2014 Ionics 20 315Google Scholar
[22] Koyama Y, Arai H, Tanaka I, Uchimoto Y, Ogumi Z 2014 J. Mater. Chem. A 2 11235Google Scholar
[23] Kresse G, Furthmüller J 1996 Comput. Mater. Sci. 6 15Google Scholar
[24] Anisimov V I, Zaanen J, Andersen O K 1991 Phys. Rev. B 44 943Google Scholar
[25] Ning F H, Li S, Xu B, Ouyang C Y 2014 Solid State Ionics 263 46Google Scholar
[26] Zhou F, Cococcioni M, Marianetti C A, Morgan D, Ceder G 2004 Phys. Rev. B 70 235121Google Scholar
[27] Monkhorst H J, Pack J D 1976 Phys. Rev. B 13 5188Google Scholar
[28] Xu G G, Zhong K H, Yang Y M, Zhang J M, Huang Z G 2019 Solid State Ionics 338 25Google Scholar
[29] Ning F H, Gong X, Rao F Y, Zeng X M, Ouyang C Y 2016 Int. J. Electrochem. Sci. 11 1951
[30] Chen Y, Yu Q, Xu G G, et al. 2019 ACS Appl. Mater. Interfaces 11 33043Google Scholar
[31] Hoang K 2017 Phys. Rev. Mater. 1 075403Google Scholar
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图 7 态密度(DOS)图 (a) 纯的LiCoO2; 图2所示的两个Mg替代同层的两个Co位时对应组态 (b) (0, 3), (c) (0, 5), (d) (0, 8); 图2所示的两个Mg替代异层的两个Co位时对应组态 (e) (0, 9), (f) (0, 12), (g) (0, 14), (h) (0, 17); 图3所示的两个Mg分别替代1个Co位和1个Li位时对应组态 (i) (0, 1), (j) (0, 2), (k) (0, 3), (l) (0, 5). 费米能级设为零
Figure 7. Density of states (DOS): (a) Pure LiCoO2; (b) (0, 3), (c) (0, 5), (d) (0, 8)configurations for two Mg atoms replacing two Co sites in the same layer given in Fig. 2; (e) (0, 9), (f) (0, 12), (g) (0, 14), (h) (0, 17) configurations for two Mg atoms replacing two Co sites in different layers given in Fig. 2; (i) (0, 1), (j) (0, 2), (k) (0, 3), (l) (0, 5) configurations for two Mg atoms replacing one Co site and one Li site respectively given in Fig. 3. The Fermi level is set to be zero.
图 8 态密度(DOS)图. 图4中所示的两个Mg替代同层的两个Li位时对应组态 (a) (0, 1), (b) (0, 2), (c) (0, 3), (d)(0, 8); 图4中所示的两个Mg替代异层的两个Li位时对应组态 (e) (0, 10), (f) (0, 17). 费米能级设为零
Figure 8. Density of states (DOS): (a) (0, 1), (b) (0, 2), (c) (0, 3), (d) (0, 8) configurations for two Mg atoms replacing two Li sites in the same layer given in Fig. 4; (e) (0, 10), (f) (0, 17) configurations for two Mg atoms replacing two Li sites in different layers given in Fig. 4. The Fermi level is set to be zero.
表 1 图2所示的各种掺杂组态的形成能
Table 1. Formation energies of the various doping configurations given in Fig. 2.
Mg-Mg间距d/Å 组态 Eform/eV 2.830 (0, 1) 1.651 (0, 2) 0.196 (0, 3) –0.588 (0, 4) 0.497 (0, 5) –0.604 (0, 6) 0.383 4.902 (0, 7) 0.348 (0, 8) –1.004 4.992 (0, 9) –0.887 (0, 10) –0.886 (0, 11) –0.886 5.738 (0, 12) –0.875 (0, 13) –0.874 6.398 (0, 14) –0.872 (0, 15) –0.870 (0, 16) –0.871 7.547 (0, 17) –0.655 表 2 图3所示的各种掺杂组态的形成能
Table 2. Formation energies of the various doping configurations given in Fig.3.
Mg-Mg间距d/Å 组态 Eform/eV 2.869 (0, 1) –1.137 (0, 2) –0.497 (0, 3) –2.228 4.030 (0, 4) 0.978 (0, 5) –0.143 4.924 (0, 6) 0.319 (0, 7) 0.346 (0, 8) 0.344 6.346 (0, 9) 0.756 表 3 图4所示的各种掺杂组态的形成能
Table 3. Formation energies of the various doping configurations given in Fig.4.
Mg-Mg间距d/Å 组态 Eform/eV 2.830 (0, 1) –0.965 (0, 2) –0.442 (0, 3) –0.635 (0, 4) –0.491 (0, 5) –0.723 (0, 6) –0.965 4.902 (0, 7) –0.126 (0, 8) –0.226 4.992 (0, 9) 1.883 (0, 10) –0.019 (0, 11) 0.208 5.738 (0, 12) 0.459 (0, 13) 0.729 (0, 14) 0.223 6.398 (0, 15) 2.305 (0, 16) 0.993 8.060 (0, 17) –0.182 -
[1] Li W D, Erickson E M, Manthiram A 2020 Nat. Energy 5 26Google Scholar
[2] Yang X R, Lin M, Zheng G R, et al. 2020 Adv. Funct. Mater. 30 2004664Google Scholar
[3] Aurbach D, Markovsky B, Rodkin A, Levi E, Cohen Y S, Kim H J, Schmidt M 2002 Electrochim. Acta 47 4291Google Scholar
[4] Reddy M V, Jie T W, Jafta C J, et al. 2014 Electrochim. Acta 128 192Google Scholar
[5] Lala S M, Montoro L A, Lemos V, Abbate M, Rosolen J M 2005 Electrochim. Acta 51 7Google Scholar
[6] Abbate M, Lala S M, Montoro L A, Rosolen J M 2004 Phys. Rev. B 70 235101Google Scholar
[7] 杨萧, 倪江锋, 黄友元, 陈继涛, 周恒辉, 张新祥 2006 物理化学学报 22 183Google Scholar
Yang X, Ni J F, Huang Y Y, Chen J T, Zhou H H, Zhang X X 2006 Acta Phys. Chim. Sin. 22 183Google Scholar
[8] Yu J P, Han Z H, Hu X H, Zhan H, Zhou Y H, Liu X J 2014 J. Power Sources 262 136Google Scholar
[9] Wu K, Li Q, Chen M M, Chen D F, Wu M M, Hu Z B, Li F Q, Xiao X L 2018 J. Solid State Electrochem. 22 3725Google Scholar
[10] Myung S T, Kumagai N, Komaba S, Chung H T 2001 Solid State Ionics 139 47Google Scholar
[11] Xie M, Hu T, Yang L, Zhou Y 2016 RSC Adv. 6 63250Google Scholar
[12] Julien C, Camacho-Lopez M A, Lemal M, Ziolkiewicz S 2002 Mater. Sci. Eng. B 95 6Google Scholar
[13] Jin Y H, Xu S G. Li Z T, Xu K H, Ding W X, Song J W, Wang H B, Zhao J Q 2018 J. Electrochem. Soc. 165 A2267Google Scholar
[14] Cheng T, Ma Z T, Qian R C, Wang Y T, Cheng Q, Lyu Y C, Nie A, Guo B K 2021 Adv. Funct. Mater. 31 2001974Google Scholar
[15] Tian T, Zhang T W, Yin Y C, Tan Y H, Song Y H, Lu L L, Yao H B 2020 Nano Lett. 20 677Google Scholar
[16] Zhang J N, Li Q H, Ouyang C Y, et al. 2019 Nat. Energy 4 594Google Scholar
[17] Wang Z G, Wang Z X, Guo H J, Peng W J, Li X H 2015 Ceram. Int. 41 469Google Scholar
[18] Tukamoto H, West A R 1997 J. Electrochem. Soc. 144 3164Google Scholar
[19] Shi S Q, Ouyang C Y, Lei M S, Tang W H 2007 J. Power Sources 171 908Google Scholar
[20] 徐晓光, 魏英进, 孟醒, 王春忠, 黄祖飞, 陈岗 2004 物理学报 53 210Google Scholar
Xu X G, Wei Y J, Meng X, Wang C Z, Huang Z F, Chen G 2004 Acta Phys. Sin. 53 210Google Scholar
[21] Varanasi A K, Bhowmik A, Sarkar T, Waghmare U V, Bharadwaj M D 2014 Ionics 20 315Google Scholar
[22] Koyama Y, Arai H, Tanaka I, Uchimoto Y, Ogumi Z 2014 J. Mater. Chem. A 2 11235Google Scholar
[23] Kresse G, Furthmüller J 1996 Comput. Mater. Sci. 6 15Google Scholar
[24] Anisimov V I, Zaanen J, Andersen O K 1991 Phys. Rev. B 44 943Google Scholar
[25] Ning F H, Li S, Xu B, Ouyang C Y 2014 Solid State Ionics 263 46Google Scholar
[26] Zhou F, Cococcioni M, Marianetti C A, Morgan D, Ceder G 2004 Phys. Rev. B 70 235121Google Scholar
[27] Monkhorst H J, Pack J D 1976 Phys. Rev. B 13 5188Google Scholar
[28] Xu G G, Zhong K H, Yang Y M, Zhang J M, Huang Z G 2019 Solid State Ionics 338 25Google Scholar
[29] Ning F H, Gong X, Rao F Y, Zeng X M, Ouyang C Y 2016 Int. J. Electrochem. Sci. 11 1951
[30] Chen Y, Yu Q, Xu G G, et al. 2019 ACS Appl. Mater. Interfaces 11 33043Google Scholar
[31] Hoang K 2017 Phys. Rev. Mater. 1 075403Google Scholar
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