TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodes

Li Jun-Lin; Li Rui-Bin; Ding Li-Li; Chen Wei; Liu Yan

doi:10.7498/aps.71.20211691

Abstract

The parasitic effect inside metal oxide field effect transistor regarded as the basic structure of large scale digital circuits, has long been considered as an important factor affecting the disturbance, upset and latchup of integrated circuits in pulsed γ-ray radiation environment. To investigate the turn-on mechanism of vertical parasitic effect in NMOSFET induced by pulsed γ-ray radiation, the 40 nm, 90 nm and 180 nm NMOSFET device models are constructed by TCAD and the normal electrical characteristics are calibrated. The trend of vertical parasitic triode current gain, the turn-on conditions of vertical parasitic triode and their influence on working state of NMOSFET are obtained. The simulation results are shown below. 1) The disturbance of well potential inside NMOSFET induced by pulsed γ-ray radiation is the main reason for the turn-on of vertical parasitic triode. 2) When vertical parasitic triode is turn-on, the large secondary photocurrent will be generated inside NMOSFET which will affect the working state of the transistor. 3) The current gain of vertical parasitic triode in NMOSFET decreases with the technology node decreasing. The results provide a theoretical basis for studying the transient ionizing radiation effects of electronic devices.

Keywords:

PACS:

94.05.Sd	(Space weather)
94.30.-d	(Physics of the magnetosphere)
94.30.Hn	(Energetic trapped particles)
94.80.+g	(Instrumentation for space plasma physics, ionosphere, and magnetosphere)

Authors and contacts

1.
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China

Corresponding author: Li Jun-Lin, lijunlin@nint.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11835006)

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References

[1]	Wirth J L, Rogers S C 1964 IEEE Trans. Nucl. Sci. 11 24 Google Scholar
[2]	Enlow E W, Alexander D R 1988 IEEE Trans. Nucl. Sci. 35 1467 Google Scholar
[3]	Fjeldly T A, Deng Y Q, Shur M S, Hjalmarson H P, Muyshondt A, Ytterdal T 2001 IEEE Trans. Nucl. Sci. 48 1721 Google Scholar
[4]	Alexander D R 2003 IEEE Trans. Nucl. Sci. 50 565 Google Scholar
[5]	赖祖武 1998 抗辐射电子学(北京: 国防工业出版社) 第288—300页 Lai Z W 1998 Radiation Electronics (Beijing: Defense Industry Press) pp288–300 (in Chinese)
[6]	Lewis C 1995 Transient Radiation Effects on Electronics (Alexandria: Defense Nuclear Agency) pp200–245
[7]	马强, 林东生, 范如玉, 陈伟, 杨善潮, 龚建成, 王桂珍, 齐超 2010 原子能科学技术 44 545 Google Scholar Ma Q, Lin D S, Fan R Y, Chen W, Yang S C, Gong J C, Wang G Z, Qi C 2010 Atomic Energy Science and Technology 44 545 Google Scholar
[8]	Oh S C, Lee N H, Lee H H 2012 12th International Conference on Control, Automation and Systems Jeju Island, Korea, October 17–21, 2012 p1233
[9]	王桂珍, 林东生, 齐超, 白小燕, 杨善潮, 李瑞宾, 马强, 金晓明, 刘岩 2014 原子能科学技术 48 2165 Google Scholar Wang G Z, Lin D S, Qi C, Bai X Y, Yang S C, Li R B, Ma Q, Jin X M, Liu Y 2014 Atomic Energy Science and Technology 48 2165 Google Scholar
[10]	Massengill L W, Diehl-Nagle S E 1985 IEEE Trans. Nucl. Sci. 32 4026 Google Scholar
[11]	Massengill L W, Diehl-Nagle S E 1986 IEEE Trans. Nucl. Sci. 33 1541 Google Scholar
[12]	Li J L, Chen W, Li R B, Wang G Z, Yang S C 2019 3rd Internaltional Conference on Radiation Effects of Electronic Devices Chongqing, China, May 29–31, 2019 pp1–4
[13]	Boselli G, Reddy V, Duvvury C 2005 43rd Annual International Reliability Physics Symposium San Jose, USA, April 17–21, 2005 p137
[14]	Li R B, Chen W, Lin D S, Yang S C, Bai X Y, Wang G Z, Liu Y, Qi C, Ma Q 2012 Sci. Chin. Tech. Sci. 55 3242 Google Scholar
[15]	Keshavarz A A, Fischer T A, Dawes W R, Hawkins C F 1988 IEEE Trans. Nucl. Sci. 35 1422 Google Scholar
[16]	Olson B D, Amusan O A, Dasgupta S, Massengill L W, Witulski A F, Bhuva B L, Alles M L, Warrenm K M, Ball D R 2007 IEEE Trans. Nucl. Sci. 54 894 Google Scholar
[17]	Ahlbin J R, Atkinson N M, Gadlage M J, Gaspard N J, Bhuva B L, Loveless T D, Zhang E X, Chen L, Massengill L W 2011 IEEE Trans. Nucl. Sci. 58 2585 Google Scholar
[18]	金晓明, 范如玉, 陈伟, 王桂珍, 林东生, 杨善潮, 白小燕 2010 原子能科学技术 44 1487 Google Scholar Jin X M, Fan R Y, Chen W, Wang G Z, Lin D S, Yang S C, Bai X Y 2010 Atomic Energy Science and Technology 44 1487 Google Scholar
[19]	Calienes W, Reis R, Anghel C, Vladimirescu A 2014 IEEE 57^thInternational Midwest Symposium on Circuits and Systems Texas, USA, August 3–6, 2014 p655
[20]	Wunsch T F, Hash G L, Hewlett F W, Treece R K 1991 IEEE Trans. Nucl. Sci. 38 1392 Google Scholar
[21]	Dasgupta S 2007 M. S. Thesis (Nashville: Vanderbilt University)
[22]	Atkinson N M 2010 M. S. Thesis (Nashville: Vanderbilt University)
[23]	Li R B, Wang C H, He C H, Chen W, Li J L, Qi C, Liu Y 2020 Nucl. Instrum. Meth. B 470 32 Google Scholar
[24]	Neamen D A 2007 Semiconductor Physics and Devices Basic Principles (Beijing: Publishing House of Electronics Industry) pp284–285

Cited By

期刊类型引用(5)

1.	张晓芳，白钧水，潘业欣，常博. 灾害性空间天气事件预警分级探讨. 航天器环境工程. 2024(03): 260-269 . 百度学术
2.	张伟杰，沈国红，张珅毅，张贤国，叶依众. 一种基于TOF×E方法的空间中能离子探测器设计与仿真. 空间科学学报. 2023(02): 340-351 . 百度学术
3.	张伟杰，张珅毅，张贤国，叶依众. 用于空间中高能离子探测的飞行时间(TOF)质谱仪——发展现状与展望. 地球物理学报. 2022(10): 3743-3758 . 百度学术
4.	YANG Zhe，SHEN Guohong，JING Tao. Development of High-energy Particle Detectors for Space Exploration. 空间科学学报. 2022(06): 1171-1184 . 百度学术
5.	廖偲含，王宏伟，鲁同所，杨兴，匡攀. 利用小波分析研究近地空间高能电子的周期变化特征. 天文学报. 2021(03): 69-86 . 百度学术

其他类型引用(0)

图 1 NMOS管寄生效应示意图

Figure 1. Parasitic effect schematic of NMOS.

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图 2 NMOS管二维剖面

Figure 2. Two-dimensional profile of NMOS.

DownLoad: Full-Size Img PowerPoint

图 3 NMOS管沟道处掺杂

Figure 3. Channel doping of NMOS.

DownLoad: Full-Size Img PowerPoint

图 4 40 nm NMOS管常态特性校准曲线　(a) 转移特性曲线; (b) 输出特性曲线

Figure 4. Normal characteristic calibration curve of 40 nm NMOS: (a) Transfer characteristic curve; (b) output characteristic curve.

DownLoad: Full-Size Img PowerPoint

图 6 180 nm NMOS管常态特性校准曲线　(a) 转移特性曲线; (b) 输出特性曲线

Figure 6. Normal characteristic calibration curve of 180 nm NMOS: (a) Transfer characteristic curve; (b) output characteristic curve.

DownLoad: Full-Size Img PowerPoint

图 5 90 nm NMOS管常态特性校准曲线　(a)转移特性曲线; (b) 输出特性曲线

Figure 5. Normal characteristic calibration curve of 90 nm NMOS: (a) Transfer characteristic curve; (b) output characteristic curve.

DownLoad: Full-Size Img PowerPoint

图 7 NMOS管截止时内部瞬时光电流　(a) 源极、漏极瞬时光电流; (b) P阱、衬底瞬时光电流

Figure 7. Photocurrent of NMOS when channel is cut-off: (a) Photocurrent of source and drain; (b) photocurrent of P-well and substrate.

DownLoad: Full-Size Img PowerPoint

图 8 NMOS管导通时内部光电流　(a) 源极、漏极瞬时光电流; (b) P阱、衬底瞬时光电流

Figure 8. Photocurrent of NMOS when channel is turn-on: (a) Photocurrent of source and drain; (b) photocurrent of P-well and substrate.

DownLoad: Full-Size Img PowerPoint

图 9 脉冲γ射线剂量率为2×10⁷Gy(Si)/s时NMOS管电势分布随时间变化　(a) 20 ns; (b) 70 ns; (c) 120 ns; (d) 200 ns

Figure 9. Variation of NMOS potential distribution over time when dose rate of transient γ-ray is 2×10⁷Gy(Si)/s: (a) 20 ns; (b) 70 ns; (c) 120 ns; (d) 200 ns.

DownLoad: Full-Size Img PowerPoint

图 10 脉冲γ射线剂量率为1×10¹⁰Gy(Si)/s时NMOS管电势分布随时间变化　(a) 20 ns; (b) 70 ns; (c) 120 ns; (d) 200 ns

Figure 10. Variation of NMOS potential distribution over time when dose rate of transient γ-ray is 1×10¹⁰Gy(Si)/s: (a) 20 ns; (b) 70 ns; (c) 120 ns; (d) 200 ns.

DownLoad: Full-Size Img PowerPoint

图 11 NMOS管截止时内部瞬时光电流

Figure 11. Photocurrent of NMOS when channel is cut-off.

DownLoad: Full-Size Img PowerPoint

图 12 NMOS管导通时内部瞬时光电流

Figure 12. Photocurrent of NMOS when channel is turn-on.

DownLoad: Full-Size Img PowerPoint

图 13 纵向寄生三极管电流增益

Figure 13. Gain of the vertial NPN triode vs voltage of pwell.

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图 14 共发射极电流增益随集电极电流变化趋势

Figure 14. Tendency of current gain of the common emitter to the current of collector.

DownLoad: Full-Size Img PowerPoint

表 1 不同尺寸NMOS管结构参数与工艺参数

Table 1. Structure and process parameters of NMOS with different feature size.

工艺节点λ/nm	沟道长度L/nm	沟道宽度W/nm	源漏掺杂/cm³	晕掺杂/cm³	多晶硅掺杂/cm³	阈值掺杂/cm³	漏电掺杂/cm³
40	40	120	2 × 10²⁰	1.5 × 10¹⁹	2 × 10²⁰	7.5 × 10¹⁸	7.5 × 10¹⁸
90	80	200	2 × 10²⁰	1 × 10¹⁸	2 × 10²⁰	8.2 × 10¹⁸	8 × 10¹⁸
180	180	540	1 × 10²⁰	8 × 10¹⁷	1 × 10²⁰	8 × 10¹⁸	7 × 10¹⁸

DownLoad: CSV

[1]	Wirth J L, Rogers S C 1964 IEEE Trans. Nucl. Sci. 11 24 Google Scholar
[2]	Enlow E W, Alexander D R 1988 IEEE Trans. Nucl. Sci. 35 1467 Google Scholar
[3]	Fjeldly T A, Deng Y Q, Shur M S, Hjalmarson H P, Muyshondt A, Ytterdal T 2001 IEEE Trans. Nucl. Sci. 48 1721 Google Scholar
[4]	Alexander D R 2003 IEEE Trans. Nucl. Sci. 50 565 Google Scholar
[5]	赖祖武 1998 抗辐射电子学(北京: 国防工业出版社) 第288—300页 Lai Z W 1998 Radiation Electronics (Beijing: Defense Industry Press) pp288–300 (in Chinese)
[6]	Lewis C 1995 Transient Radiation Effects on Electronics (Alexandria: Defense Nuclear Agency) pp200–245
[7]	马强, 林东生, 范如玉, 陈伟, 杨善潮, 龚建成, 王桂珍, 齐超 2010 原子能科学技术 44 545 Google Scholar Ma Q, Lin D S, Fan R Y, Chen W, Yang S C, Gong J C, Wang G Z, Qi C 2010 Atomic Energy Science and Technology 44 545 Google Scholar
[8]	Oh S C, Lee N H, Lee H H 2012 12th International Conference on Control, Automation and Systems Jeju Island, Korea, October 17–21, 2012 p1233
[9]	王桂珍, 林东生, 齐超, 白小燕, 杨善潮, 李瑞宾, 马强, 金晓明, 刘岩 2014 原子能科学技术 48 2165 Google Scholar Wang G Z, Lin D S, Qi C, Bai X Y, Yang S C, Li R B, Ma Q, Jin X M, Liu Y 2014 Atomic Energy Science and Technology 48 2165 Google Scholar
[10]	Massengill L W, Diehl-Nagle S E 1985 IEEE Trans. Nucl. Sci. 32 4026 Google Scholar
[11]	Massengill L W, Diehl-Nagle S E 1986 IEEE Trans. Nucl. Sci. 33 1541 Google Scholar
[12]	Li J L, Chen W, Li R B, Wang G Z, Yang S C 2019 3rd Internaltional Conference on Radiation Effects of Electronic Devices Chongqing, China, May 29–31, 2019 pp1–4
[13]	Boselli G, Reddy V, Duvvury C 2005 43rd Annual International Reliability Physics Symposium San Jose, USA, April 17–21, 2005 p137
[14]	Li R B, Chen W, Lin D S, Yang S C, Bai X Y, Wang G Z, Liu Y, Qi C, Ma Q 2012 Sci. Chin. Tech. Sci. 55 3242 Google Scholar
[15]	Keshavarz A A, Fischer T A, Dawes W R, Hawkins C F 1988 IEEE Trans. Nucl. Sci. 35 1422 Google Scholar
[16]	Olson B D, Amusan O A, Dasgupta S, Massengill L W, Witulski A F, Bhuva B L, Alles M L, Warrenm K M, Ball D R 2007 IEEE Trans. Nucl. Sci. 54 894 Google Scholar
[17]	Ahlbin J R, Atkinson N M, Gadlage M J, Gaspard N J, Bhuva B L, Loveless T D, Zhang E X, Chen L, Massengill L W 2011 IEEE Trans. Nucl. Sci. 58 2585 Google Scholar
[18]	金晓明, 范如玉, 陈伟, 王桂珍, 林东生, 杨善潮, 白小燕 2010 原子能科学技术 44 1487 Google Scholar Jin X M, Fan R Y, Chen W, Wang G Z, Lin D S, Yang S C, Bai X Y 2010 Atomic Energy Science and Technology 44 1487 Google Scholar
[19]	Calienes W, Reis R, Anghel C, Vladimirescu A 2014 IEEE 57^thInternational Midwest Symposium on Circuits and Systems Texas, USA, August 3–6, 2014 p655
[20]	Wunsch T F, Hash G L, Hewlett F W, Treece R K 1991 IEEE Trans. Nucl. Sci. 38 1392 Google Scholar
[21]	Dasgupta S 2007 M. S. Thesis (Nashville: Vanderbilt University)
[22]	Atkinson N M 2010 M. S. Thesis (Nashville: Vanderbilt University)
[23]	Li R B, Wang C H, He C H, Chen W, Li J L, Qi C, Liu Y 2020 Nucl. Instrum. Meth. B 470 32 Google Scholar
[24]	Neamen D A 2007 Semiconductor Physics and Devices Basic Principles (Beijing: Publishing House of Electronics Industry) pp284–285

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期刊类型引用(5)

1.	张晓芳，白钧水，潘业欣，常博. 灾害性空间天气事件预警分级探讨. 航天器环境工程. 2024(03): 260-269 . 百度学术
2.	张伟杰，沈国红，张珅毅，张贤国，叶依众. 一种基于TOF×E方法的空间中能离子探测器设计与仿真. 空间科学学报. 2023(02): 340-351 . 百度学术
3.	张伟杰，张珅毅，张贤国，叶依众. 用于空间中高能离子探测的飞行时间(TOF)质谱仪——发展现状与展望. 地球物理学报. 2022(10): 3743-3758 . 百度学术
4.	YANG Zhe，SHEN Guohong，JING Tao. Development of High-energy Particle Detectors for Space Exploration. 空间科学学报. 2022(06): 1171-1184 . 百度学术
5.	廖偲含，王宏伟，鲁同所，杨兴，匡攀. 利用小波分析研究近地空间高能电子的周期变化特征. 天文学报. 2021(03): 69-86 . 百度学术

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