Chemical pressure effects in ZrCuSiAs-type manganese-based compound ThMnSbN

Xiao Yu-Sen; Duan Qing-Chen; Li Bai-Zhuo; Liu Shao-Hua; Zhu Qin-Qing; Tan Shu-Gang; Jing Qiang; Ren Zhi; Mei Yu-Xue; Wang Cao; Cao Guang-Han

doi:10.7498/aps.71.20211706

Abstract

A quasi-two-dimensional manganese-based compound ThMnSbN is synthesized by the solid-state reaction method. Structural refinement based on X-ray powder diffraction shows that the compound structure belongs to the P4/nmm space group. The lattice parameters are a = 4.1731 Å and c = 9.5160 Å. Electrical transport measurements show that the resistivity of the compound is the lowest in the Mn-based family. When cooling it, its resistivity rises slowly and shows a shoulder-like anomaly at 16 K. Also, the magnetic susceptibility exhibits an anomaly at the very same temperature. Though the specific heat data indicate the inexistence of transition-induced anomaly, the electron specific heat coefficient of γ = 19.7 mJ·mol^–1·K^–2 is derived by fitting the low-temperature C-T curve. This γ value is much higher than those of the isostructural manganese-based compounds. Thus, the specific heat is consistent with the low resistivity, implying a considerable electronic density of states near the Fermi surface for ThMnSbN. By comparing the crystal structure for a group of ZrCuSiAs-type compounds, various chemical pressure effects of the fluorite-type Th₂N₂ layer on the conducting layer in different compounds are discussed.

Keywords:

Authors and contacts

1.
Shool of Physics and Optoelectronics, Shandong University of Technology, Zibo 255000, China
2.
Department of Physics, Zhejiang University, Hangzhou 310027, China
3.
School of Science, Westlake University, Hangzhou 310024, China

Corresponding author: Mei Yu-Xue, meiyuxue@sdut.edu.cn ; Wang Cao, wangcao@sdut.edu.cn ;

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0303002) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2019MA036, ZR2016AQ08).

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References

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Cited By

图 1 ThMnSbN多晶样品的X射线衍射谱精修结果.

Figure 1. Rietveld refinement of X-ray powder diffraction data.

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图 2 (a) ThMnSbN样品的电阻率随温度变化曲线. 其中右坐标表示电阻率对温度微分后的结果, T^*表示电阻率异常的温度点; (b) 按照阿伦尼乌斯方程绘制的lnρ-T曲线; (c) 按照变程跳跃模型绘制的lnρ-T ^–1/4曲线

Figure 2. (a) Electronic resistivity for ThMnSbN polycrystalline sample. The right axis shows the plot of dρ/dT versus T, where T^* marks the resistivity anomaly; (b) Arrhenius plot of the lnρ-T data; (c) the plot of lnρ versus T ^–0.25 according to the three-dimensional Mott variable-range hopping (VRH) mechanism.

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图 3 ThMnSbN样品摩尔磁化率随温度的变化曲线. 测量中采用零场冷(ZFC)和场冷(FC)两种测量方式, 施加外磁场的磁感应强度为B = 0.1 T. 插图显示样品在300 K时的磁化曲线

Figure 3. Temperature dependence of magnetic susceptibility for ThMnSbN sample. Both zero-field cooling (ZFC) and field cooling (FC) were performed in a static field of B = 0.1 T. The inset shows the magnetization curve of the sample at 300 K.

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图 4 扣除杂相铁磁信号背景后的磁化率随温度变化规律. 其中红色实线为采用居里-外斯公式χ = χ₀+C/(T – θ)拟合150—300 K之间磁化率的结果. 插图显示了样品在不同温度下测量得到的磁化曲线. 通过线性拟合3 × 10⁴—5 × 10⁴ Oe之间的磁化强度得到了本征磁化率χ = dM/dH

Figure 4. The magnetic susceptibility (χ = dM/dH) after deducting the ferromagnetic background of the impurities by linearly fitting the M-H curve between 3 × 10⁴ and 5 × 10⁴ Oe. The solid red line fits the data between 150 and 300 K using the Curie-Weiss relation χ = χ₀ + C/(T – θ). The inset shows the original magnetization curves.

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图 5 (a) ThMnAsN样品的比热随温度的变化曲线; (b) ThMnAsN的比热-温度曲线在30 K以下部分的放大图, 其中右纵轴显示了比热对温度的微分随温度的变化曲线; (c) C/T–T²曲线, 其中红色的直线为参照

Figure 5. (a) The data of specific heat for the ThMnSbN sample; (b) an enlarged view of the C–T curve below 30 K, in which the right vertical axis shows the differential of specific heat as a function of temperature; (c) C/T–T² curve, where the red straight line fits the data in the range of 6 K<T<15 K.

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图 6 (a), (b) 含有不同载流子库层的ZrCuSiAs型锰基化合物归一化晶胞参数; (c) 不同导电层的ZrCuSiAs型系列化合物中Pn原子的高度(H_Pn)与晶胞a轴的关系. 其中V_layer表示一个惯用晶胞中导电层所占据的体积^{[20,21,23,26,28,38-43]}

Figure 6. (a), (b) The normalized cell parameters of ZrCuSiAs-type manganese-based compounds with different conducting layers; (c) the relationship between the height of the Pn atom (H_Pn) and the a-axis for ZrCuSiAs-type compounds, where V_layer represents the volume of the conducting layer in a conventional cell^{[20,21,23,26,28,38-43]}.

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表 1 室温下ThMnSbN多晶X射线衍射谱的Rietveld精修结果. 其中H_Sb表示Sb原子与Fe平面的垂直间距

Table 1. Structural data for ThMnSbN at room-temperature, where H_Sb represents the distance from Sb atom to the Fe plane

	Compounds			ThMnSbN
	Space group			P4/nmm
	a/Å			4.1731
	c/Å			9.5160
	R_p/%			5.71
	R_wp/%			7.48
	R_e/%			6.16
	χ²			1.475
	H_Sb/Å			1.7467
	Sb-Mn-Sb angle			100.13°
Atoms	Wyckoff	x	y	z	B_iso	Occupancy
Th	2c	0.25	0.25	0.11692	0.17287	1.0054
Mn	2b	0.75	0.25	0.5	0.82783	0.9946
Sb	2c	0.25	0.25	0.68356	0.22882	0.9921
N	2a	0.75	0.25	0	1.0 (fixed)	1.0 (fixed)

DownLoad: CSV

表 2 ThMnPnN系列化合物中电子比热系数γ、泡利顺磁磁化率χ_P以及居里-外斯拟合所得磁化率中的温度无关项χ₀的对比

Table 2. Comparison of the Sommerfeld coefficient γ, Pauli paramagnetic susceptibility χ_P and the temperature-independent term χ₀ in the magnetic susceptibility obtained by the Curie-Weiss fitting in ThMnPnN compounds.

Compounds	γ/ (mJ·mol^–1·K^–2)	χ_P/(10^–4 emu·mol^–1)	χ₀/(10^–4 emu·mol^–1)
ThMnPN^[23]	8.11	1.11	3.3
ThMnAsN^[23]	9.62	1.32	5.2
ThMnSbN	19.7	2.70	13.7

DownLoad: CSV

[1]	Tegel M, Schellenberg I, Pöttgen R, Johrendt D 2008 Z. Naturforsch. , B:Chem. Sci. 63 1057 Google Scholar
[2]	Ozawa T C, Kauzlarich S M 2008 Sci. Technol. Adv. Mater. 9 033003 Google Scholar
[3]	Chen X H, Wu T, Wu G, Liu R H, Chen H, Fang D F 2008 Nature 453 761 Google Scholar
[4]	Wang C, Li L, Chi S, Zhu Z, Ren Z, Li Y, Wang Y, Lin X, Luo Y, Jiang S, Xu X, Cao G, Xu Z A 2008 Europhys. Lett. 83 67006 Google Scholar
[5]	Ren Z A, Che G C, Dong X L, Yang J, Lu W, Yi W, Shen X L, Li Z C, Sun L L, Zhou F, Zhao Z X 2008 Europhys. Lett. 83 17002 Google Scholar
[6]	Tegel M, Johansson S, Weiß V, Schellenberg I, Hermes W, Pöttgen R, Johrendt D 2008 Europhys. Lett. 84 67007 Google Scholar
[7]	Cheng P, Shen B, Mu G, Zhu X, Han F, Zeng B, Wen H H 2009 Europhys. Lett. 85 67003 Google Scholar
[8]	Muraba Y, Matsuishi S, Hosono H 2014 J. Phys. Soc. Jpn. 83 033705 Google Scholar
[9]	Park S W, Mizoguchi H, Kodama K, Shamoto S, Otomo T, Matsuishi S, Kamiya T, Hosono H 2013 Inorg. Chem. 52 13363 Google Scholar
[10]	McGuire M A, Garlea V O 2016 Phys. Rev. B 93 054404 Google Scholar
[11]	Kamihara Y, Watanabe T, Hirano M, Hosono H 2008 J. Am. Chem. Soc. 130 3296 Google Scholar
[12]	Yanagi H, Kawamura R, Kamiya T, Kamihara Y, Hirano M, Nakamura T, Osawa H, Hosono H 2008 Phys. Rev. B 77 224431 Google Scholar
[13]	Ohta H, Yoshimura K 2009 Phys. Rev. B 80 184409 Google Scholar
[14]	Watanabe T, Yanagi H, Kamiya T, Kamihara Y, Hiramatsu H, Hirano M, Hosono H 2007 Inorg. Chem. 46 7719 Google Scholar
[15]	Watanabe T, Yanagi H, Kamihara Y, Kamiya T, Hirano M, Hosono H 2008 J. Solid State Chem. 181 2117 Google Scholar
[16]	Emery N, Wildman E J, Skakle J M S, McLaughlin A C, Smith R I, Fitch A N 2011 Phys. Rev. B 83 144429 Google Scholar
[17]	Marcinkova A, Hansen T C, Curfs C, Margadonna S, Bos J W G 2010 Phys. Rev. B 82 174438 Google Scholar
[18]	Corkett A J, Free D G, Clarke S J 2015 Inorg. Chem. 54 1178 Google Scholar
[19]	Kimber S A J, Hill A H, Zhang Y Z, et al. 2010 Phys. Rev. B 82 100412 Google Scholar
[20]	Simonson J W, Yin Z P, Pezzoli M, et al. 2012 Proc. Natl. Acad. Sci. U. S. A. 109 E1815 Google Scholar
[21]	Wang C, Wang Z C, Mei Y X, Li Y K, Li L, Tang Z T, Liu Y, Zhang P, Zhai H F, Xu Z A, Cao G H 2016 J. Am. Chem. Soc. 138 2170 Google Scholar
[22]	Wang Z C, Shao Y T, Wang C, Wang Z, Xu Z A, Cao G H 2017 Europhys. Lett. 118 57004 Google Scholar
[23]	Zhang F, Li B, Ren Q, et al. 2020 Inorg. Chem. 59 2937 Google Scholar
[24]	Zheng L, Chen G, Jing D, Gang L, Luo J 2008 Phys. Rev. B 78 060504 Google Scholar
[25]	Rodríguez-Carvajal J 1993 Phys. B 192 55 Google Scholar
[26]	Plokhikh I V, Charkin D O, Verchenko V Y, Kuznetsov A N, Tsirlin A A, Kazakov S M, Shevelkov A V 2018 J. Solid State Chem. 258 682 Google Scholar
[27]	Sangeetha N S, Smetana V, Mudring A V, Johnston D C 2018 Phys. Rev. B 97 014402 Google Scholar
[28]	Kimber S, Hill A H, Zhang Y Z, Jeschke H O, Valenti R, Ritter C, Schellenberg I, Hermes W, Poettgen R, Argyriou D N 2010 Physical Review B 82 100412
[29]	Gurgul J, Rinke M T, Schellenberg I, Pöttgen R 2013 Solid State Sci. 17 122 Google Scholar
[30]	Okita T, Makino Y 1968 J. Phys. Soc. Jpn. 25 120 Google Scholar
[31]	Hanna T, Matsuishi S, Kodama K, Otomo T, Shamoto S I, Hosono H 2013 Phys. Rev. B 87 020401
[32]	Wildman E J, Emery N, McLaughlin A C 2014 Phys. Rev. B 90 224413 Google Scholar
[33]	Wildman E J, Skakle J M S, Emery N, McLaughlin A C 2012 J. Am. Chem. Soc. 134 8766 Google Scholar
[34]	Kageyama H, Yoshimura K, Kosuge K, Mitamura H, Goto T 1997 J. Phys. Soc. Jpn. 66 1607 Google Scholar
[35]	Niitaka S, Kageyama H, Yoshimura K, Kosuge K, Kawano S, Aso N, Mitsuda A, Mitamura H, Goto T 2001 J. Phys. Soc. Jpn. 70 1222 Google Scholar
[36]	Niitaka S, Yoshimura K, Kosuge K, Nishi M, Kakurai K 2001 Phys. Rev. Lett. 87 177202 Google Scholar
[37]	Hardy V, Lees M R, Maignan A, H bert S, Flahaut D, Martin C, Paul D M 2003 J. Phys. Condens. Matter 15 5737 Google Scholar
[38]	de la Cruz C, Huang Q, Lynn J W, Li J, Ratcliff W, 2 nd, Zarestky J L, Mook H A, Chen G F, Luo J L, Wang N L, Dai P 2008 Nature 453 899 Google Scholar
[39]	Zhigadlo N D, Katrych S, Weyeneth S, Puzniak P, Moll P W, Bukowski Z, Karpinski J, Keller H, Batlogg B 2010 Phys. Rev. B 82 064517 Google Scholar
[40]	Nitsche F, Jesche A, Hieckmann E, Doert T, Ruck M 2010 Phys. Rev. B 82 134514 Google Scholar
[41]	Nientiedt A T, Jeitschko W, Pollmeier P G, Brylak M 1997 Z. Naturforsch. , B:Chem. Sci. 52 560 Google Scholar
[42]	Muir S, Subramanian M A 2012 Prog. Solid State Chem. 40 41 Google Scholar
[43]	Schellenberg I, Nilges T, Pöttgen R 2008 Z. Naturforsch. , B:Chem. Sci. 63 834 Google Scholar

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