Controllable multi-trap optical tweezers based on low loss optical phase change and metalens

Wang Yan; Peng Miao; Cheng Wei; Peng Zheng; Cheng Hao; Zang Sheng-Yin; Liu Hao; Ren Xiao-Dong; Shuai Yu-Bei; Huang Cheng-Zhi; Wu Jia-Gui; Yang Jun-Bo

doi:10.7498/aps.72.20221794

Abstract

Novel dual-trap and multi-trap optical tweezers are designed and analyzed, in order to enhance the particle trapping performance of optical tweezers in three-dimensional (3D) space. Firstly, controllable dual-trap optical tweezers are proposed based on metalens and the low-loss optical phase-change material Sb₂S₃. The horizontal and axial analysis of the optical force acting on two 250-nm-radius SiO₂ particles are also carried out. The simulation results show that when Sb₂S₃ is in the crystalline state, the transverse optical trap stiffness $ {k}_{x} $ of two particles reaches about 25.7 pN/(μm·W) and 37.4 pN/(μm·W), respectively, and the axial optical trap stiffness $ {k}_{z} $ for each particle is about 10.0 pN/(μm·W). When the Sb₂S₃ is in the amorphous state, both $ {k}_{x} $ and $ {k}_{z} $ are about 1/10 of the counterpart of its crystalline state. As a result, the particle is not stably trapped in the z-direction, and thus enabling the controllability of trapping particles in 3D space. Furthermore, array-type multi-trap optical tweezers are proposed. By regulating the crystal state and noncrystal state of phase-change material Sb₂S₃, it is convenient to form different combinations of 3D trap schemes. These new optical tweezers can realize 3D space particle trap in various ways, thereby improving the flexibility of optical tweezers, and providing a series of new ways of implementing the metalens-based optical tweezers.

Keywords:

Authors and contacts

1.
College of Artificial Intelligence, Southwest University, Chongqing 400715, China
2.
Center of Material Science, National University of Defense Technology, Changsha 410073, China
3.
School of Physical Science and Technology, Southwest University, Chongqing 400715, China
4.
Key Laboratory of Luminescence Analysis and Molecular Sensing, Ministry of Education, School of Pharmaceutical, Southwest University, Chongqing 400715, China
5.
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China

Corresponding author: Huang Cheng-Zhi, chengzhi@swu.edu.cn ; Wu Jia-Gui, mgh@swu.edu.cn ; Yang Jun-Bo, yangjunbo@nudt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60907003, 61805278, 61875168), the Natural Science Funds for Distinguished Young Scientists of Chongqing, China (Grant No. cstc2021jcyj-jqX0027), the Innovation Research 2035 Pilot Plan of Southwest University, China (Grant No. SWU-XDPY22012), the China Postdoctoral Science Foundation (Grant No. 2018M633704), the Innovation Support Program for Overseas Students in Chongqing, China (Grant No. cx2021008), the Foundation of National University of Defense Technology, China (Grant Nos. JC13-02-13, ZK17-03-01), the Natural Science Foundation of Hunan Province, China (Grant No. 13JJ3001), and the Program for New Century Excellent Talents in University (Grant No. NCET-12-0142).

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References

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[2]	Block S M, Goldstein L S B, Schnapp B J 1990 Nature 348 348 Google Scholar
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[5]	Ohlinger A, Deak A, Lutich A A, Feldmann J 2012 Phys. Rev. Lett. 108 018101 Google Scholar
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[7]	Juan M L, Righini M, Quidant R 2011 Nat. Photonics 5 349 Google Scholar
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Cited By

图 1 用于双阱光镊的超透镜结构图　(a) A和B部分的Sb₂S₃均处于晶态; (b) A部分的Sb₂S₃处于晶态, 而B部分的Sb₂S₃处于非晶态; (c) A部分的Sb₂S₃处于非晶态, B部分的Sb₂S₃处于晶态; (d) A和B部分的Sb₂S₃均处于非晶态

Figure 1. Structure of dual-trap optical tweezer metalens: (a) Sb₂S₃ in both parts A and B are in crystalline state; (b) Sb₂S₃ in part A is in crystalline state, while Sb₂S₃ in part B is in amorphous state; (c) Sb₂S₃ in part A is in amorphous state, and Sb₂S₃ in part B is in crystalline state; (d) Sb₂S₃ in both parts A and B are in amorphous state.

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图 2 (a)单元结构的结构图, 从上至下分别是高度H为1 μm和不同宽度长度比W/L的Sb₂S₃, 厚度T为0.03 μm的ITO层和SiO₂基底, 单元结构周期P为0.5 μm; (b), (c) Sb₂S₃处于非晶态和晶态下, 纳米方柱不同宽度长度比W/L的PCE图; (d) Sb₂S₃纳米方柱L = 220 nm, W = 160 nm时, 相位和PCE与旋转角$ \theta $的关系图

Figure 2. (a) Structural diagrams of the unit cell, from top to bottom, Sb₂S₃ with H of 1 μm and different W/L, ITO layer with T of 0.03 μm, and SiO₂ base, and unit cell P of 0.5 μm, respectively; (b), (c) PCE diagrams of the nanosquare pillars with different W/ L when Sb₂S₃ is in the amorphous and crystalline states, respectively; (d) the plots of phase and PCE versus rotation angle $ \theta $ for Sb₂S₃ nanosquare pillars with L = 220 nm and W = 160 nm.

DownLoad: Full-Size Img PowerPoint

图 3 xz平面和xy (z = 3.3 μm) 平面的电磁场强度分布图　(a), (b) A和B部分的Sb₂S₃均处于晶态; (c), (d) A部分的Sb₂S₃处于晶态, 而B部分的Sb₂S₃处于非晶态; (e), (f) A部分的Sb₂S₃处于非晶态, B部分的Sb₂S₃处于晶态; (g), (h) A和B部分的Sb₂S₃均处于非晶态

Figure 3. The electromagnetic field intensity distribution in the xz plane and xy (z = 3.3 μm) plane, respectively: (a), (b) Sb₂S₃ in both parts A and B are in crystalline state; (c), (d) Sb₂S₃ in part A is in crystalline state, while Sb₂S₃ in part B is in amorphous state; (e), (f) Sb₂S₃ in part A is in amorphous state, and Sb₂S₃ in part B is in crystalline state; (g) , (h) Sb₂S₃ in both parts A and B are in amorphous state.

DownLoad: Full-Size Img PowerPoint

图 4 施加在粒子上F_x和F_z分别与x位移和z位移的关系图　(a) A和B部分的Sb₂S₃均处于晶态; (b) A部分的Sb₂S₃处于晶态, 而B部分的Sb₂S₃处于非晶态; (c) A部分的Sb₂S₃处于非晶态, B部分的Sb₂S₃处于晶态; (d) A和B部分的Sb₂S₃均处于非晶态

Figure 4. Plots of F_xand F_z for the particle versus x displacement and z displacement, respectively: (a) Sb₂S₃ in both parts A and B are in crystalline state; (b) Sb₂S₃ in part A is in crystalline state, while Sb₂S₃ in part B is in amorphous state; (c) Sb₂S₃ in part A is in amorphous state, and Sb₂S₃ in part B is in crystalline state; (d) Sb₂S₃ in both parts A and B are in amorphous state.

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图 5 施加在粒子上F_y与y位移关系图　(a) A部分的Sb₂S₃分别均处于晶态和非晶态; (b) B部分的Sb₂S₃分别均处于晶态和非晶态

Figure 5. Plots of F_y for the particle versus y displacement: (a) Sb₂S₃ in part A is in the crystalline and amorphous states, respectively; (b) Sb₂S₃ in part A is in the crystalline and amorphous states, respectively.

DownLoad: Full-Size Img PowerPoint

图 6 当A和B部分的Sb₂S₃为晶态时F_x和F_z的势阱深度图　(a), (b) F_x的势阱深度U_x图; (c), (d) F_z的势阱深度U_z图

Figure 6. Potential depth plots of F_x and F_z when parts A and B are crystalline state: (a), (b) potential depth U_x plots of F_x; (c), (d) potential depth U_zplots of F_z.

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图 7 (a), (b) 用于多阱光镊的超透镜结构图, (a) 中间部分的Sb₂S₃处于非晶态, 其余部分的Sb₂S₃均处于晶态, (b)所有部分的Sb₂S₃均处于晶态; (c), (d) 分别为(a)状态下xy (z = 3.3 μm)平面和xz平面的电磁场强度分布图; (e), (f) 分别为(b)状态下xy (z = 3.3 μm)平面和xz平面的电磁场强度分布图

Figure 7. (a), (b) Structure of the multi-trap optical tweezer metalens, (a) Sb₂S₃ in the middle part is in the amorphous state, and Sb₂S₃ in the rest parts are in the crystalline state, (b) Sb₂S₃ in all parts are in the crystalline state; (c), (d) the electromagnetic field intensity distributions in the xy (z = 3.3 μm) plane and xz plane in (a) state, respectively; (e), (f) the electromagnetic field intensity distributions of xy (z = 3.3 μm) plane and xz plane in (b) state, respectively.

DownLoad: Full-Size Img PowerPoint

图 8 超透镜中间部分的Sb₂S₃在晶态和非晶态下　(a) 粒子受到的F_x与x位移的关系; (b) 粒子受到的F_z与z位移的关系; (c), (d) 超透镜中间部分的Sb₂S₃在晶态下状态下F_x和F_z的势阱深度图

Figure 8. Sb₂S₃ in the middle part of the multi-trap optical tweezer metalens under the crystalline and amorphous states: (a) F_x of particles versus x displacement; (b) F_z of particles versus z displacement; (c), (d) potential depth plots of F_x and F_z for Sb₂S₃ in the middle part of the multi-trap optical tweezer metalens in the crystalline state.

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图 9 超透镜其中6种聚焦状态的xy (z = 3.3 μm)平面和xz平面电磁场强度分布图来实现不同形状的捕获阵列　(a)—(c)和(g)—(i)为xy (z = 3.3 μm)平面强度分布图; (d)—(f)和(j)—(l)为对应的xz平面强度分布图

Figure 9. Electromagnetic field intensity distribution of xy (z = 3.3 μm) plane and xz plane for six focusing states of the multi-trap optical tweezer metalens to achieve different shapes of trapping arrays: (a)–(c) and (g)–(i) are xy (z = 3.3 μm) planar intensity distributions; (d)–(f) and (j)–(l) are the corresponding xz planar intensity distributions.

DownLoad: Full-Size Img PowerPoint

[1]	Guo H L, Li Z Y 2013 Sci. China:Phys. Mech. Astron. 56 2351 Google Scholar
[2]	Block S M, Goldstein L S B, Schnapp B J 1990 Nature 348 348 Google Scholar
[3]	Ozcelik A, Rufo J, Guo F, Li P, Lata J, Huang T J 2018 Nat. Methods 15 1021 Google Scholar
[4]	Ding X, Lin S C S, Kiraly B, Yue H, Li S, Chiang I K, Shi J, Benkovic S J, Huang T J 2012 Proc. Natl. Acad. Sci. U. S. A. 109 11105 Google Scholar
[5]	Ohlinger A, Deak A, Lutich A A, Feldmann J 2012 Phys. Rev. Lett. 108 018101 Google Scholar
[6]	Li T, Kheifets S, Medellin D, Raizen M G 2010 Science 328 1673 Google Scholar
[7]	Juan M L, Righini M, Quidant R 2011 Nat. Photonics 5 349 Google Scholar
[8]	Zhang Y, Min C, Dou X, Wang X, Urbach H P, Somekh M G, Yuan X 2021 Light:Sci. Appl. 10 1 Google Scholar
[9]	Ashkin A, Dziedzic J M, Bjorkholm J E, Chu S 1986 Opt. Lett. 11 288 Google Scholar
[10]	Ertaş D 1998 Phys. Rev. Lett. 80 1548 Google Scholar
[11]	Duke T A J, Austin R H 1998 Phys. Rev. Lett. 80 1552 Google Scholar
[12]	MacDonald M P, Paterson L, Volke-Sepulveda K, J Arlt, W Sibbett, K Dholakia 2002 Science 296 1101 Google Scholar
[13]	Terray A, Oakey J, Marr D W M 2002 Science 296 1841 Google Scholar
[14]	Emiliani V, Sanvitto D, Zahid M, Gerbal F, Coppey-Moisan M 2004 Opt. Express 12 3906 Google Scholar
[15]	Shaw L A, Panas R M, Spadaccini C M, Hopkins J B 2017 Opt. Lett. 42 2862 Google Scholar
[16]	Curtis J E, Koss B A, Grier D G 2002 Opt. Commun. 207 169 Google Scholar
[17]	MacDonald M P, Spalding G C, Dholakia K 2003 Nature 426 421 Google Scholar
[18]	Lei M, Yao B, Rupp R A 2006 Opt. Express 14 5803 Google Scholar
[19]	Zhang Y, Liu Z, Yang J, Yuan L 2012 Opt. Commun. 285 4068 Google Scholar
[20]	Tam J M, Biran I, Walt D R 2004 Phys. Rev. Lett. 84 4289
[21]	Yin S, He F, Kubo W, Wang Q, Frame J, G. Green N, Fang X 2020 Opt. Express 28 38949 Google Scholar
[22]	Suwannasopon S, Meyer F, Schlickriede C, Chaisakul P, T-Thienprasert J, Limtrakul J, Zentgraf T, Chattham N 2019 Crystals 9 515 Google Scholar
[23]	Markovich H, Shishkin I I, Hendler N, Ginzburg P 2018 Nano Lett. 18 5024 Google Scholar
[24]	Wang X, Dai Y, Zhang Y, Min C, and Yuan X 2018 ACS Photonics 5 2945 Google Scholar
[25]	Kuo H Y, Vyas S, Chu C H, Chen M K, Shi X, Misawa H, Lu Y J, Luo Y, Tsai D P 2021 Nanomaterials 11 1730 Google Scholar
[26]	Chantakit T, Schlickriede C, Sain B, Meyer F, Weiss T, Chattham N, Zentgraf T 2020 Photonics Res. 8 1435 Google Scholar
[27]	Ma Y, Rui G, Gu B, Cui Y 2017 Sci. Rep. 7 1 Google Scholar
[28]	Li T, Xu X, Fu B, Wang S, Li B, Wang Z, Zhu S 2021 Photonics Res. 9 1062 Google Scholar
[29]	Ikuma Y, Shoji Y, Kuwahara M, Wang X, Kintaka K, Kawashima H, Tanaka D, Tsuda, H 2010 Electron. Lett. 46 1460 Google Scholar
[30]	Zhang Y, Chou J B, Li J, Li H, Du Q, Yadav A, Zhou S, Shalaginov M Y, Fang Z, Zhong H, Roberts C, Robinson P, Bohlin B, Ríos C, Lin H, Kang M, Gu T, Warner J, Liberman V, Richardson K, Hu J 2019 Nat. Commun. 10 4279 Google Scholar
[31]	Delaney M, Zeimpekis I, Du H, Yan X, Banakar M, Thomson D J, Hewak D W, Muskens O L 2021 Sci. Adv. 7 eabg3500 Google Scholar
[32]	Delaney M, Zeimpekis I, Lawson D, Hewak D W, Muskens O L 2020 Adv. Funct. Mater. 30 2002447 Google Scholar
[33]	Chaumet P C, Nieto-vesperinas M 2000 Opt. Lett. 25 1065 Google Scholar
[34]	Haraday Y, Asakura T 1996 Opt. Commun. 124 529 Google Scholar
[35]	Dienerowitz M, Mazilu M, Dholakia K 2008 J. Nanophotonics 2 021875 Google Scholar
[36]	Novotny L, Bian R X, Xie X S 1997 Phys. Rev. Lett. 79 645 Google Scholar
[37]	Padmanabha S, Oguntoye I O, Frantz J, Myers J, Bekele R, Clabeau A, Escarra, M D 2021 CLEO: QELS_Fundamental Science (Optica Publishing Group), May, 2021 pJTu3A.8
[38]	Padmanabha S, Oguntoye I O, Frantz J, Myers J, Bekele R, Clabeau A, Nguyen V, Sanghrea J, Escarra M D 2022 CLEO: Applications and Technology (Optica Publishing Group), May, 2022 pJTu3A-69
[39]	Bai W, Yang P, Wang S, Huang J, Chen D, Zhang Z, Yang J, Xu B 2019 Appl. Sci. 9 4927 Google Scholar
[40]	Song Y, Liu W, Wang X, Wang F, Wei Z, Meng H, Lin N, Zhang H 2021 Front. Phys. 9 651898 Google Scholar

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