Analytically modeling electric field of shielded gate trench metal-oxide-semiconductor field effect transistor

Su Le; Wang Cai-Lin; Yang Wu-Hua; Liang Xiao-Gang; Zhang Chao

doi:10.7498/aps.72.20230550

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Su Le, Wang Cai-Lin, Yang Wu-Hua, Liang Xiao-Gang, Zhang Chao. Analytically modeling electric field of shielded gate trench metal-oxide-semiconductor field effect transistorJ. Acta Physica Sinica, 2023, 72(14): 148501. DOI: 10.7498/aps.72.20230550

Citation:

Su Le, Wang Cai-Lin, Yang Wu-Hua, Liang Xiao-Gang, Zhang Chao. Analytically modeling electric field of shielded gate trench metal-oxide-semiconductor field effect transistorJ. Acta Physica Sinica, 2023, 72(14): 148501. DOI: 10.7498/aps.72.20230550

Citation:

Su Le, Wang Cai-Lin, Yang Wu-Hua, Liang Xiao-Gang, Zhang Chao. Analytically modeling electric field of shielded gate trench metal-oxide-semiconductor field effect transistorJ. Acta Physica Sinica, 2023, 72(14): 148501. DOI: 10.7498/aps.72.20230550