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Based on the principle of ultra-short channel MOSFET, a definite solution of potential is proposed by introducing two rectangular sources between the insulated gate and the space-charge region. By using the semi-analytical method and the spectral method, the 2D semi-analytical solution has been obtained for the first time as faras we know. The solution is a special function for the infinite series expressions. The most advantage of this model is that it can not only be calculated directly without numerical analysis but also keep the same accuracy as that of numerical solution. In addition, this model, which can be directly used in circuit simulation, has the characteristics that in its expression there is no adapter parameter with small calculating amount. The potential, surface potential and threshold of 45—22 nm MOSFET have been calculated in the frame of this model. It is shown that the calculated results are identical with Medici.
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Keywords:
- semi-analytical method /
- potential /
- threshold voltage /
- MOSFET
[1] Kasai R, Yokoyamak, Yoshiia A, Sudo T 1982 IEEE Trans. on Electron Devices 29 870
[2] Hadji D, Marchal Y 1999 IEEE Trans. Magnetics 35 1809
[3] Rios R, Mudanai S, Shih W K, Packan P 2004 IEDM Tech. Dig. 755
[4] He Jin, Chan Mansun, Zhang Xing 2006 IEEE Trans.on Electron Devices 53 2008
[5] Xie Q, Xu Jnm, Yuan Taur 2012 IEEE Trans. Electron Devices 59 1569
[6] Liu Z H, Hu C, Huang JH, Chan T Y, Jeng M C, Ko P K, Y C Cheng 1993 IEEE Trans. on Electron Devices 40 86
[7] Qing S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒珏 2011 物理学报 60 058501]
[8] Baishya S, Allik A, Sarkar C K 2006 IEEE Trans.on Electron Devices 53 507
[9] Xi X, Dunga M, He J, Liu W, Cao K M, Jin X, Ou J J, Chan M, Niknejad A M, Hu C 2004 BEIM 4.5.0 MOSFET MODEL (Berkeley: Dept. Elect. Eng. Comput. Sci. University of California)
[10] Sheng J N, Ma Q S, Yuan B, Zheng Q H, Yan Z W 2006 Theory and Application of Electromagnetic Field and Wave by Semi-Analytical Method (Beijing: Science Press) p25 (in Chinese) [盛剑霓, 马齐爽, 袁斌, 郑勤红, 闫照文 2006 电磁场与波分析中半解析法的理论方法与应用 (北京: 科学出版社) 第25页]
[11] Jayadeva G S, DasGupta A 2010 IEEE Trans. on Electron Devices 57 1820
[12] Medici Version A User Guide 2007 Synopsys Company
[13] Ratnakumar K, Meindl J 1982 IEEE Solid-State Circuits 17 937
[14] Yu B, Lu H, Liu M, Taur Y 2007 IEEE Trans. on Electron Devices 54 2715
[15] Xie Q, Xu J, Ren T, Taur Y 2010 Semicond. Sci. Technol. 25 035
[16] Bi H S, Hai C S, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 物理学报 60 018501]
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[1] Kasai R, Yokoyamak, Yoshiia A, Sudo T 1982 IEEE Trans. on Electron Devices 29 870
[2] Hadji D, Marchal Y 1999 IEEE Trans. Magnetics 35 1809
[3] Rios R, Mudanai S, Shih W K, Packan P 2004 IEDM Tech. Dig. 755
[4] He Jin, Chan Mansun, Zhang Xing 2006 IEEE Trans.on Electron Devices 53 2008
[5] Xie Q, Xu Jnm, Yuan Taur 2012 IEEE Trans. Electron Devices 59 1569
[6] Liu Z H, Hu C, Huang JH, Chan T Y, Jeng M C, Ko P K, Y C Cheng 1993 IEEE Trans. on Electron Devices 40 86
[7] Qing S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒珏 2011 物理学报 60 058501]
[8] Baishya S, Allik A, Sarkar C K 2006 IEEE Trans.on Electron Devices 53 507
[9] Xi X, Dunga M, He J, Liu W, Cao K M, Jin X, Ou J J, Chan M, Niknejad A M, Hu C 2004 BEIM 4.5.0 MOSFET MODEL (Berkeley: Dept. Elect. Eng. Comput. Sci. University of California)
[10] Sheng J N, Ma Q S, Yuan B, Zheng Q H, Yan Z W 2006 Theory and Application of Electromagnetic Field and Wave by Semi-Analytical Method (Beijing: Science Press) p25 (in Chinese) [盛剑霓, 马齐爽, 袁斌, 郑勤红, 闫照文 2006 电磁场与波分析中半解析法的理论方法与应用 (北京: 科学出版社) 第25页]
[11] Jayadeva G S, DasGupta A 2010 IEEE Trans. on Electron Devices 57 1820
[12] Medici Version A User Guide 2007 Synopsys Company
[13] Ratnakumar K, Meindl J 1982 IEEE Solid-State Circuits 17 937
[14] Yu B, Lu H, Liu M, Taur Y 2007 IEEE Trans. on Electron Devices 54 2715
[15] Xie Q, Xu J, Ren T, Taur Y 2010 Semicond. Sci. Technol. 25 035
[16] Bi H S, Hai C S, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 物理学报 60 018501]
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