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A novel asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain is presented. The performance of the new structure is studied by developing physics-based analytical models for surface potential, threshold voltage, and subthreshold current. It is found that the new structure can effectively suppress the short-channel effects and the hot-carrier effects, and simultaneously reduce the off-state current. It is also revealed that subthreshold current is a slight function of doping concentration of overlapped region, while work-function of gate electrode has a strong influence on subthreshold current. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE.
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Keywords:
- asymmetric HALO-doping /
- gate overlapped lightly-doped drain /
- surrounding-gate MOSFET /
- analytical model
[1] Hu G, Gu J, Hu S, Ding Y, Liu R, Tang T A 2011 IEEE T. Electron Dev. Electron Dev. 58 1830
[2] Chiang T K 2011 IEEE T. Electron Dev. 58 567
[3] Yu T, Wang R, Huang R, Chen J, Zhuge J, Wang Y 2010 IEEE T. Electron Dev. 57 2864
[4] Bian W, He J, Zhang L, Zhang J, Chan M 2009 Microelectron Reliab 49 897
[5] Yu B, Yuan Y, Song J, Taur Y 2009 IEEE T. Electron Dev. 56 2357
[6] Li Z C 2008 Chin. Phys. B 17 4312
[7] Liu F, He J, Zhang L, Zhang J, Hu J, Ma C, Chan M A 2008 IEEE T. Electron Dev. 55 2187
[8] Zhang L N, He J, Zhou W, Chen L, Xu Y W 2010 Chin. Phys. B 19 047306
[9] Liu W L, Zhang K W, Zhong J X 2009 Chin. Phys. B 18 2920
[10] Hamid A E, Iniguez B, Guitart J R 2007 IEEE T. Electron Dev. 54 572
[11] Kaur R, Chaujar R, Saxena M, Gupta R 2007 Semicond Sci. Tech. 22 1097
[12] Hueting R J, Heringa A 2006 IEEE T. Electron Dev. 53 1641
[13] Buti T N, Ogura S, Rovedo N, Tobimatsu K 1991 IEEE T. Electron Dev. 38 1757
[14] Ogura S, Tsang P J, Walker W W, Critchlow D L, Shepard J F 1980 IEEE T. ELectron Dev. 27 1359
[15] Izawa R, Kure T, Takeda E 1988 IEEE T. Electron Dev. 35 2088
[16] Yamaguchi Y, Iwamatsu T, Joachim H O, Oda H, Inoue Y, Nishimura T, Tsukamoto K 1994 IEEE T. Electron Dev. 41 1222
[17] Bonfiglietti A, Cuscuna M, Valletta A, Mariucci L, Pecora A, Fortunato G, Brotherton S, Ayres J 2003 IEEE T. Electron Dev. 50 2425
[18] Jimenez D, Saenz J, Iniguez B, Sune J, Marsal L, Pallares J 2004 IEEE Electr Device Lett. 25 314
[19] Liang X, Taur Y 2004 IEEE T. Electron Dev. 51 1385
[20] Arora N D, Hauser J R, Roulston D J 1982 IEEE T. Electron Dev. 29 292
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[1] Hu G, Gu J, Hu S, Ding Y, Liu R, Tang T A 2011 IEEE T. Electron Dev. Electron Dev. 58 1830
[2] Chiang T K 2011 IEEE T. Electron Dev. 58 567
[3] Yu T, Wang R, Huang R, Chen J, Zhuge J, Wang Y 2010 IEEE T. Electron Dev. 57 2864
[4] Bian W, He J, Zhang L, Zhang J, Chan M 2009 Microelectron Reliab 49 897
[5] Yu B, Yuan Y, Song J, Taur Y 2009 IEEE T. Electron Dev. 56 2357
[6] Li Z C 2008 Chin. Phys. B 17 4312
[7] Liu F, He J, Zhang L, Zhang J, Hu J, Ma C, Chan M A 2008 IEEE T. Electron Dev. 55 2187
[8] Zhang L N, He J, Zhou W, Chen L, Xu Y W 2010 Chin. Phys. B 19 047306
[9] Liu W L, Zhang K W, Zhong J X 2009 Chin. Phys. B 18 2920
[10] Hamid A E, Iniguez B, Guitart J R 2007 IEEE T. Electron Dev. 54 572
[11] Kaur R, Chaujar R, Saxena M, Gupta R 2007 Semicond Sci. Tech. 22 1097
[12] Hueting R J, Heringa A 2006 IEEE T. Electron Dev. 53 1641
[13] Buti T N, Ogura S, Rovedo N, Tobimatsu K 1991 IEEE T. Electron Dev. 38 1757
[14] Ogura S, Tsang P J, Walker W W, Critchlow D L, Shepard J F 1980 IEEE T. ELectron Dev. 27 1359
[15] Izawa R, Kure T, Takeda E 1988 IEEE T. Electron Dev. 35 2088
[16] Yamaguchi Y, Iwamatsu T, Joachim H O, Oda H, Inoue Y, Nishimura T, Tsukamoto K 1994 IEEE T. Electron Dev. 41 1222
[17] Bonfiglietti A, Cuscuna M, Valletta A, Mariucci L, Pecora A, Fortunato G, Brotherton S, Ayres J 2003 IEEE T. Electron Dev. 50 2425
[18] Jimenez D, Saenz J, Iniguez B, Sune J, Marsal L, Pallares J 2004 IEEE Electr Device Lett. 25 314
[19] Liang X, Taur Y 2004 IEEE T. Electron Dev. 51 1385
[20] Arora N D, Hauser J R, Roulston D J 1982 IEEE T. Electron Dev. 29 292
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