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From the tuning mechanism of the DFB laser diode, we establish an analytical model for current and temperature tuning characteristics. The parameters of the model are identified by experimental results. The model is used to analyze the four DFB diode lasers, and the transient characteristics of the lasers are obtained. We also obtain the static characteristics of these lasers from Agilent 86142B Spectrometer. The comparison between the two values indicates that the correlation coefficients are both more than 0.9999. At the same time, according to the absorption spectrum of CO2 gas, we also measure the emission wavelength of lasers. Comparing it with the HITRAN spectrum of CO2 absorption lines, the two errors are shown to be within 3pm. The analytical model can accurately predict the transient output wavelength of lasers in tuning, the accuracy can meet the spectrum, optical coherence measurements and other practical requirements.
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Keywords:
- DFB laser diode /
- tuning mechanism /
- analytical model /
- current tuning and temperature tuning
[1] Du Z H,Zhai Y Q, Li J Y, Hu B 2009 Spectroscopy and Spectral Analysis 29 3199
[2] Liu J W, Du Z H, An Y,Li J Y,Gao D Y, Xu K X 2010 Proc. SPIE 7544 75444V
[3] Liu Y, Wang L S, Tao P L, Feng S C, Yin G L, Ren W H, Tan Z W, Jian S S 2011 Acta Phys.Sin.60 024207-1(in Chinese)[刘 艳、汪磊石、陶沛琳、冯素春、尹国路、任文化、谭中伟、简水生 2011 物理学报 60 024207-1]
[4] Xie H Y, Jin D Y, He L J, Zhang W, Wang L, Zhang W R, Wang W 2008 Acta Phys.Sin.57 4558(in Chinese)[谢红云、金冬月、何莉剑、张 蔚、王 路、张万荣、王 圩 2008 物理学报 57 4558]
[5] Mitsuhiro T 1995 IEEE J. Quantum Electron. 31 1389
[6] Vincent W,David M,Richard P,Michael L, John D 2006 Spectrochimica Acta A 63 1013
[7] Jae-Ho Han, Sung-Woong Park 2007 Current Appl. Phys. 7 6
[8] Zhang G W 2002 Tunable Lasers (Beijing: National Defense Industry Press)(in Chinese)[张国威 2002 可调谐激光技术 (北京:国防工业出版社)]
[9] Cai B R,Chen Z, Liu X 1995 Semiconductor laser (Beijing: Publishing House of Electronics Industry) p59 (in Chinese) [蔡伯荣、陈 峥、刘 旭 1995 半导体激光器(北京:电子工业出版社) 第59页]
[10] Jens Buus, Markus C A, Daniel J B 2005 Tunable Laser Diodes and Related Optical Sources (New York:John Wiley & Sons) p59
[11] Kuznetsov M 1988 IEEE J.Quant.Electron. 24 1837
[12] Schmidt B,Hakimi R,Illek S 1997 Electron.Lett. 30 389
[13] Joanne M, Robert O 1983 IEEE J. Quantum Electron. 19 1525
[14] Wieczorek S, Krauskopf B, Simpson T B, Lenstra D 2005 Phys. Reports 416 14
[15] Dutta N K, Hobson W S, Lopata J, Zydzik G 1997 Appl. Phys. Lett. 70 1219
[16] Casey H C, Panish M B 1978 Heterostructure laser(New York: Academic Press) p50
[17] Seufert J, Fischer M, Legge M, Koeth J, Werner R, Kamp M, Forchel A 2004 Spectrochimica Acta A 60 3243
[18] Vicet A,Yarekha D A, Ouvrard A, Teissier R, Alibert C, Baranov A N 2003 IEEE Proc. Optoelectron. 150 310
[19] Andrei A P, Albert N, Imenkow, Yakolev Y P 1996 Spectrochimica Acta A 52 871
[20] Fukuda M, Mishima T, Nakayama T, Masuda T 2010 Appl. Phys. B 100 377
[21] Tsang W T 1990 Semiconductor Injection Laser (New York: John Wiley & Son) p208
[22] Dong X Y, Zhao C L, Guan B O,Tan H Y, Yuan S Z, Kai G Y, Dong X Y 2002 Acta Phys.Sin.51 2750(in Chinese)[董新永、赵春柳、关柏鸥、谭华耀、袁树忠、开桂云、董孝义 2002 物理学报 51 2750]
[23] Li J Y, Du Z H, Gao D Y,Qi R B, Xu K X 2011 Meas. Sci. Technol. (to be published)
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[1] Du Z H,Zhai Y Q, Li J Y, Hu B 2009 Spectroscopy and Spectral Analysis 29 3199
[2] Liu J W, Du Z H, An Y,Li J Y,Gao D Y, Xu K X 2010 Proc. SPIE 7544 75444V
[3] Liu Y, Wang L S, Tao P L, Feng S C, Yin G L, Ren W H, Tan Z W, Jian S S 2011 Acta Phys.Sin.60 024207-1(in Chinese)[刘 艳、汪磊石、陶沛琳、冯素春、尹国路、任文化、谭中伟、简水生 2011 物理学报 60 024207-1]
[4] Xie H Y, Jin D Y, He L J, Zhang W, Wang L, Zhang W R, Wang W 2008 Acta Phys.Sin.57 4558(in Chinese)[谢红云、金冬月、何莉剑、张 蔚、王 路、张万荣、王 圩 2008 物理学报 57 4558]
[5] Mitsuhiro T 1995 IEEE J. Quantum Electron. 31 1389
[6] Vincent W,David M,Richard P,Michael L, John D 2006 Spectrochimica Acta A 63 1013
[7] Jae-Ho Han, Sung-Woong Park 2007 Current Appl. Phys. 7 6
[8] Zhang G W 2002 Tunable Lasers (Beijing: National Defense Industry Press)(in Chinese)[张国威 2002 可调谐激光技术 (北京:国防工业出版社)]
[9] Cai B R,Chen Z, Liu X 1995 Semiconductor laser (Beijing: Publishing House of Electronics Industry) p59 (in Chinese) [蔡伯荣、陈 峥、刘 旭 1995 半导体激光器(北京:电子工业出版社) 第59页]
[10] Jens Buus, Markus C A, Daniel J B 2005 Tunable Laser Diodes and Related Optical Sources (New York:John Wiley & Sons) p59
[11] Kuznetsov M 1988 IEEE J.Quant.Electron. 24 1837
[12] Schmidt B,Hakimi R,Illek S 1997 Electron.Lett. 30 389
[13] Joanne M, Robert O 1983 IEEE J. Quantum Electron. 19 1525
[14] Wieczorek S, Krauskopf B, Simpson T B, Lenstra D 2005 Phys. Reports 416 14
[15] Dutta N K, Hobson W S, Lopata J, Zydzik G 1997 Appl. Phys. Lett. 70 1219
[16] Casey H C, Panish M B 1978 Heterostructure laser(New York: Academic Press) p50
[17] Seufert J, Fischer M, Legge M, Koeth J, Werner R, Kamp M, Forchel A 2004 Spectrochimica Acta A 60 3243
[18] Vicet A,Yarekha D A, Ouvrard A, Teissier R, Alibert C, Baranov A N 2003 IEEE Proc. Optoelectron. 150 310
[19] Andrei A P, Albert N, Imenkow, Yakolev Y P 1996 Spectrochimica Acta A 52 871
[20] Fukuda M, Mishima T, Nakayama T, Masuda T 2010 Appl. Phys. B 100 377
[21] Tsang W T 1990 Semiconductor Injection Laser (New York: John Wiley & Son) p208
[22] Dong X Y, Zhao C L, Guan B O,Tan H Y, Yuan S Z, Kai G Y, Dong X Y 2002 Acta Phys.Sin.51 2750(in Chinese)[董新永、赵春柳、关柏鸥、谭华耀、袁树忠、开桂云、董孝义 2002 物理学报 51 2750]
[23] Li J Y, Du Z H, Gao D Y,Qi R B, Xu K X 2011 Meas. Sci. Technol. (to be published)
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