Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET

Cao Lei; Liu Hong-Xia; Wang Guan-Yu

doi:10.7498/aps.61.017105

Abstract

In this paper,we propose a new device structure called HMG SSDOI (hetero-materiel gate strained Si directly on insulator), which combines the advantages of strained-silicon and hetero-material gate technology. By solving 2D Poisson's equation, we present models of the surface potential, surface electric field and threshold voltage for the new structure. These models take into account the effects of the gate length, the work function and the energy band. ISE TCAD is also used to simulate the performance of new device structure. The comparison results of model calculation and mathematic simulation show that the new structure of HMG SSDOI can enhance the carrier transport efficiency and suppress short channel effect, drain induction barrier lower and hot carrier effect, which improves device performance greatly.

Keywords:

Authors and contacts

1.
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos.60976068, 60936005), and Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No.708083).

References

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Cited By

[1]	Fiegna C 1994 IEEE Trans. Electron Dev. ED-41 941
[2]	Hisamoto D, Kedzierski J 2000 IEEE Trans.Electron Dev. 47 2320
[3]	Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣,崔晓英,胡辉勇,戴显英,宣荣喜 2007 物理学报 56 3504]
[4]	Zhou X 2000 IEEE Trans. Electron Dev. 47 113
[5]	LongW, Qu H J, JenMK 1999 IEEE Trans. Electron Dev. 46 865
[6]	Venkataraman V, Kumar M J 2007 IEEE Trans. Electron Dev. 54 554
[7]	Kumar M J, Venkataraman V 2006 IEEE Trans. Electron Dev. 53 1780
[8]	Yao F, Xue C L, Cheng B W, Wang Q M 2007 Acta Phys. Sin. 56 6654 (in Chinese) [姚飞,薛春来,成步文,王启明 2007 物理学报 56 6654]
[9]	Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[10]	Kim S J, Shim T H, Choi K R, Park J G 2009 Semicond. Sci. Technol. 24 035014

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Catalog

Vol. 61, Issue 1 - 2012-01-05

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