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In this paper,we propose a new device structure called HMG SSDOI (hetero-materiel gate strained Si directly on insulator), which combines the advantages of strained-silicon and hetero-material gate technology. By solving 2D Poisson's equation, we present models of the surface potential, surface electric field and threshold voltage for the new structure. These models take into account the effects of the gate length, the work function and the energy band. ISE TCAD is also used to simulate the performance of new device structure. The comparison results of model calculation and mathematic simulation show that the new structure of HMG SSDOI can enhance the carrier transport efficiency and suppress short channel effect, drain induction barrier lower and hot carrier effect, which improves device performance greatly.
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Keywords:
- strained Si /
- hetero-material gate /
- threshold voltage /
- analytical model
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[2] Hisamoto D, Kedzierski J 2000 IEEE Trans.Electron Dev. 47 2320
[3] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣,崔晓英,胡辉勇,戴显英,宣荣喜 2007 物理学报 56 3504]
[4] Zhou X 2000 IEEE Trans. Electron Dev. 47 113
[5] LongW, Qu H J, JenMK 1999 IEEE Trans. Electron Dev. 46 865
[6] Venkataraman V, Kumar M J 2007 IEEE Trans. Electron Dev. 54 554
[7] Kumar M J, Venkataraman V 2006 IEEE Trans. Electron Dev. 53 1780
[8] Yao F, Xue C L, Cheng B W, Wang Q M 2007 Acta Phys. Sin. 56 6654 (in Chinese) [姚飞,薛春来,成步文,王启明 2007 物理学报 56 6654]
[9] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[10] Kim S J, Shim T H, Choi K R, Park J G 2009 Semicond. Sci. Technol. 24 035014
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[1] Fiegna C 1994 IEEE Trans. Electron Dev. ED-41 941
[2] Hisamoto D, Kedzierski J 2000 IEEE Trans.Electron Dev. 47 2320
[3] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣,崔晓英,胡辉勇,戴显英,宣荣喜 2007 物理学报 56 3504]
[4] Zhou X 2000 IEEE Trans. Electron Dev. 47 113
[5] LongW, Qu H J, JenMK 1999 IEEE Trans. Electron Dev. 46 865
[6] Venkataraman V, Kumar M J 2007 IEEE Trans. Electron Dev. 54 554
[7] Kumar M J, Venkataraman V 2006 IEEE Trans. Electron Dev. 53 1780
[8] Yao F, Xue C L, Cheng B W, Wang Q M 2007 Acta Phys. Sin. 56 6654 (in Chinese) [姚飞,薛春来,成步文,王启明 2007 物理学报 56 6654]
[9] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[10] Kim S J, Shim T H, Choi K R, Park J G 2009 Semicond. Sci. Technol. 24 035014
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