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应变Si NMOSFET漏电流解析模型

周春宇 张鹤鸣 胡辉勇 庄奕琪 吕懿 王斌 李妤晨

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应变Si NMOSFET漏电流解析模型

周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 李妤晨

Analytical modeling for drain current of strained Si NMOSFET

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen
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  • 基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET漏电流解析模型. 该模型采用平滑函数,实现了应变Si NMOSFET漏电流及其导数,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题. 同时考虑了载流子速度饱和效应和沟道长度调制效应的影响,进一步提高了模型精度. 通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性. 该模型可为应变Si数字集成电路和模拟集成电路分析、设计提供重要参考.
    Based on the structure of strained Si/SiGe NMOSFET, a unified drain current model is presented in this paper. The model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a smoothing function, and guarantees the continuities of the drain current and its derivatives.Furthermore, the model accuracy is enhanced by including carrier velocity saturation and channel length modulation effects. Comparisons between the model and the measured data show that the drain current model can describe the device characteristics well. The proposed model is useful for the design and simulation of digital and analogy circuits made of strained Si.
    • 基金项目: 教育部博士点基金(批准号:JY0300122503)、中央高校基本业务费(批准号:K5051225014,K5051225004)和陕西省自然科学基金(批准号:2010JQ8008)资助的课题.
    • Funds: Project supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), the Fundamental Research Funds for the Central Universities of China (Grant Nos. K5051225014, K5051225004), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).
    [1]

    O’Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911

    [2]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827

    [3]

    Bindu B, Nandita D G, Amitava D G 2006 Solid-State Electronics 5 448

    [4]

    Kumar M J, Vivek V, Nawal S 2007 Proceedings of the 20th International Conference on VLSI Design Bangalore, India, January 6–10, 2007 p189

    [5]

    Qin S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q, Shu Y 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒钰 2011 物理学报 60 058501]

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    Jakub Q, Bogdan M 2007 Journal of Telecommunications and Information Technology 3 84

    [7]

    Qu J T, Zhang H M, Qing S S, Xu X B, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 098501 (in Chinese) [曲江涛, 张鹤鸣, 秦珊珊, 徐小波, 王晓艳, 胡辉勇 2011 物理学报 60 098501]

    [8]

    Arora N 2007 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific Press) p12–68

    [9]

    Kunihiro S 2000 IEEE Trans. Electron Devices 47 2372

    [10]

    Kendall J D, Boothroyd A R 1986 IEEE Electron Devices Lett. 7 407

    [11]

    Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, Su B, Wang B, Wang G Y 2013 Acta Phys. Sin. 62 077103 (in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 舒斌, 王斌, 王冠宇 2013 物理学报 62 077103]

    [12]

    Yannis T, Colin M 2011 Operation and Modeling of the MOS Transistor (3rd Ed.) (New York: Oxford University Press) p600–638

    [13]

    Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L L 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057103]

    [14]

    Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese) [王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 物理学报 60 077106]

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    Cheng Y H, Jeng M C, Liu Z H, Huang J H, Chen K, Ping K K, Hu C M 1997 IEEE Trans. Electron Devices 44 280

  • [1]

    O’Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911

    [2]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827

    [3]

    Bindu B, Nandita D G, Amitava D G 2006 Solid-State Electronics 5 448

    [4]

    Kumar M J, Vivek V, Nawal S 2007 Proceedings of the 20th International Conference on VLSI Design Bangalore, India, January 6–10, 2007 p189

    [5]

    Qin S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q, Shu Y 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒钰 2011 物理学报 60 058501]

    [6]

    Jakub Q, Bogdan M 2007 Journal of Telecommunications and Information Technology 3 84

    [7]

    Qu J T, Zhang H M, Qing S S, Xu X B, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 098501 (in Chinese) [曲江涛, 张鹤鸣, 秦珊珊, 徐小波, 王晓艳, 胡辉勇 2011 物理学报 60 098501]

    [8]

    Arora N 2007 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific Press) p12–68

    [9]

    Kunihiro S 2000 IEEE Trans. Electron Devices 47 2372

    [10]

    Kendall J D, Boothroyd A R 1986 IEEE Electron Devices Lett. 7 407

    [11]

    Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, Su B, Wang B, Wang G Y 2013 Acta Phys. Sin. 62 077103 (in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 舒斌, 王斌, 王冠宇 2013 物理学报 62 077103]

    [12]

    Yannis T, Colin M 2011 Operation and Modeling of the MOS Transistor (3rd Ed.) (New York: Oxford University Press) p600–638

    [13]

    Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L L 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057103]

    [14]

    Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese) [王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 物理学报 60 077106]

    [15]

    Cheng Y H, Jeng M C, Liu Z H, Huang J H, Chen K, Ping K K, Hu C M 1997 IEEE Trans. Electron Devices 44 280

计量
  • 文章访问数:  2189
  • PDF下载量:  514
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-08-05
  • 修回日期:  2013-08-23
  • 刊出日期:  2013-12-05

应变Si NMOSFET漏电流解析模型

  • 1. 西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 西安 710071
    基金项目: 

    教育部博士点基金(批准号:JY0300122503)、中央高校基本业务费(批准号:K5051225014,K5051225004)和陕西省自然科学基金(批准号:2010JQ8008)资助的课题.

摘要: 基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET漏电流解析模型. 该模型采用平滑函数,实现了应变Si NMOSFET漏电流及其导数,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题. 同时考虑了载流子速度饱和效应和沟道长度调制效应的影响,进一步提高了模型精度. 通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性. 该模型可为应变Si数字集成电路和模拟集成电路分析、设计提供重要参考.

English Abstract

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