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Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica,
2021, 70(15): 156101.
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Zhu Yu-Bo, Xu Hua, Li Min, Xu Miao, Peng Jun-Biao. Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor. Acta Physica Sinica,
2021, 70(16): 168501.
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Liang Ding-Kang, Chen Yi-Hao, Xu Wei, Ji Xin-Cun, Tong Yi, Wu Guo-Dong. Ultralow-voltage albumen-gated electric-double-layer thin film transistors. Acta Physica Sinica,
2018, 67(23): 237302.
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Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen. Floating gate effect in amorphous InGaZnO thin-film transistor. Acta Physica Sinica,
2018, 67(4): 047302.
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Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Deng Lian-Wen. Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate. Acta Physica Sinica,
2017, 66(9): 097101.
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Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang. Low-frequency noise in hydrogenated amorphous silicon thin film transistor. Acta Physica Sinica,
2017, 66(23): 237101.
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Zhang Li-Rong, Ma Xue-Xue, Wang Chun-Fu, Li Guan-Ming, Xia Xing-Heng, Luo Dong-Xiang, Wu Wei-Jing, Xu Miao, Wang Lei, Peng Jun-Biao. High speed gate driver circuit basd on metal oxide thin film transistors. Acta Physica Sinica,
2016, 65(2): 028501.
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Xu Piao-Rong, Qiang Lei, Yao Ruo-He. A technique for extracting the density of states of the linear region in an amorphous InGaZnO thin film transistor. Acta Physica Sinica,
2015, 64(13): 137101.
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Liu Yuan, Wu Wei-Jing, Li Bin, En Yun-Fei, Wang Lei, Liu Yu-Rong. Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors. Acta Physica Sinica,
2014, 63(9): 098503.
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Li Xi-Feng, Xin En-Long, Shi Ji-Feng, Chen Long-Long, Li Chun-Ya, Zhang Jian-Hua. Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination. Acta Physica Sinica,
2013, 62(10): 108503.
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Zhu De-Ming, Men Chuan-Ling, Cao Min, Wu Guo-Dong. Ultralow-voltage in-plane-gate indium-tin-oxide thin-film transistors made of P-doped SiO2 dielectrics. Acta Physica Sinica,
2013, 62(11): 117305.
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Xi Shan-Bin, Lu Wu, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing, Wu Xue. Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors. Acta Physica Sinica,
2012, 61(23): 236103.
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Xi Shan-Bin, Lu Wu, Wang Zhi-Kuan, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing. Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors. Acta Physica Sinica,
2012, 61(7): 076101.
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Chen Xiao-Xue, Yao Ruo-He. DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica,
2012, 61(23): 237104.
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Qiang Lei, Yao Ruo-He. Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica,
2012, 61(8): 087303.
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen. Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica,
2010, 59(4): 2775-2782.
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Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen. Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica,
2009, 58(9): 6560-6565.
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Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen. The research on metal induced crystallization with chemical source. Acta Physica Sinica,
2006, 55(2): 825-829.
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Zhao Shu-Yun, Wu Chun-Ya, Liu Zhao-Jun, Li Xue-Dong, Wang Zhong, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang. Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source. Acta Physica Sinica,
2006, 55(11): 6095-6100.
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Li Juan, Wu Chun-Ya, Zhao Shu-Yun, Liu Jian-Ping, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang. Investigation on stability of microcrystalline silicon thin film transistors. Acta Physica Sinica,
2006, 55(12): 6612-6616.
doi: 10.7498/aps.55.6612
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