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With a Nickel-Silicon alloy as a target of magnetron-sputtering under Ar /O2 mixed gases, a new type of Ni/Si oxide source called self-released nickel source is fabricated. This kind of nickel source is different with the pure nickel source at both crystallized phenomenon and remainder of Ni. Low temperature poly-Silicon crystallized by self-released nickel source has lower nickel-residua and a controllable crystallization rate related without the thickness of Ni source. That is useful for widen process window. The relations of surface roughness and electrical characters of poly-Si crystallized by different source have been studied and discussed.
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Keywords:
- tardily self-release /
- metal induced lateral crystallization /
- poly-silicon thin film /
- low temperature preparation and annealing treatment
[1] ［1］Park S J, Kang S H, Ku Y M 2005 J. Appl. Phys. 31 165
[2] ［2］Hong C H, Park C Y, Kim J H 1992 J. Appl. Phys. 71 5427
[3] ［3］Ryoichi I S, Paul C, Wilt V 2003 Thin Solid Films 427 77
[4] ［4］Zhao Y W, Wang W J, Yun F 2000 Sol. Energ. Mat. Sol. C. 62 143
[5] ［5］Yuen C Y, Poon M C, Chan W Y 2002 J. Appl. Phys. 92 6291
[6] ［6］Wang W, Meng Z G 2003 Acta Electron. Sin. 31 663 (in Chinese) ［王文、孟志国 2003 电子学报 31 663］
[7] ［7］Oh J H, Kim S H, Jang J 2006 The Society for Information Display 2006 International Symposium Digest Los Angeles, USA, June 4—9, 2006 p262
[8] ［8］Chang Y J, Kim Y L, Shim S H, Shim S H, Park S, Ahn K W, Song S C, Choi J B, Min H K, Kim C W 2006 The Society for Information Display 2006 International Symposium Digest Moscone, USA, June 4—9, 2006 p1276
[9] ［9］Wang M, Meng Z G, Wong M 2000 IEEE T. Electron. Dev. 47 2061
[10] ］Maekawa M, Nakamura Y, Hijikigawa M 2000 Electrochem. Soc. Proc. 31 111
[11] ］Meng Z G, Wang M X,Wong M 2000 IEEE T. Electron Dev. 47 404
[12] ］Toshio M, Junko S M, Toyonobu Y 2004 IEEE T. Electron Dev. 51 204
[13] ］Zhao S Y, Wu C Y, Liu Z J, Li X D, Wang Z, Meng Z G, Xiong S Z 2006 Acta Phys. Sin. 55 6095 (in Chinese) ［赵淑云、吴春亚、刘召军、李学东、王中、孟志国、熊绍珍 2006 物理学报 55 6095］
[14] ］Weast R, Astle M J 1960 Handbook of Chemistry and Physics （Boca Raton: CRC Press）p F224
[15] ］Jang J, Yoon S Y 2000 Int. J. High Speed Electron. Syst. 10 13
[16] ］Paranjape M, Pandy A, Brida S L 2000 J. Vac. Sci. Technol. A 18 2
[17] ］Meng Z G，Liu Z J, Zhao S Y, Wu C Y, Wong M, Kwok H S, Xiong S Z 2008 Proceedings of International Meeting on Information Display Los Angeles, USA May 18—23, 2008 p985
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[1] ［1］Park S J, Kang S H, Ku Y M 2005 J. Appl. Phys. 31 165
[2] ［2］Hong C H, Park C Y, Kim J H 1992 J. Appl. Phys. 71 5427
[3] ［3］Ryoichi I S, Paul C, Wilt V 2003 Thin Solid Films 427 77
[4] ［4］Zhao Y W, Wang W J, Yun F 2000 Sol. Energ. Mat. Sol. C. 62 143
[5] ［5］Yuen C Y, Poon M C, Chan W Y 2002 J. Appl. Phys. 92 6291
[6] ［6］Wang W, Meng Z G 2003 Acta Electron. Sin. 31 663 (in Chinese) ［王文、孟志国 2003 电子学报 31 663］
[7] ［7］Oh J H, Kim S H, Jang J 2006 The Society for Information Display 2006 International Symposium Digest Los Angeles, USA, June 4—9, 2006 p262
[8] ［8］Chang Y J, Kim Y L, Shim S H, Shim S H, Park S, Ahn K W, Song S C, Choi J B, Min H K, Kim C W 2006 The Society for Information Display 2006 International Symposium Digest Moscone, USA, June 4—9, 2006 p1276
[9] ［9］Wang M, Meng Z G, Wong M 2000 IEEE T. Electron. Dev. 47 2061
[10] ］Maekawa M, Nakamura Y, Hijikigawa M 2000 Electrochem. Soc. Proc. 31 111
[11] ］Meng Z G, Wang M X,Wong M 2000 IEEE T. Electron Dev. 47 404
[12] ］Toshio M, Junko S M, Toyonobu Y 2004 IEEE T. Electron Dev. 51 204
[13] ］Zhao S Y, Wu C Y, Liu Z J, Li X D, Wang Z, Meng Z G, Xiong S Z 2006 Acta Phys. Sin. 55 6095 (in Chinese) ［赵淑云、吴春亚、刘召军、李学东、王中、孟志国、熊绍珍 2006 物理学报 55 6095］
[14] ］Weast R, Astle M J 1960 Handbook of Chemistry and Physics （Boca Raton: CRC Press）p F224
[15] ］Jang J, Yoon S Y 2000 Int. J. High Speed Electron. Syst. 10 13
[16] ］Paranjape M, Pandy A, Brida S L 2000 J. Vac. Sci. Technol. A 18 2
[17] ］Meng Z G，Liu Z J, Zhao S Y, Wu C Y, Wong M, Kwok H S, Xiong S Z 2008 Proceedings of International Meeting on Information Display Los Angeles, USA May 18—23, 2008 p985
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