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Hydrogenated poly-crystalline silicon thin films are deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering at a temperature below 300 ℃. The samples are characterized by X-ray diffraction, Raman scattering, transmission electron microscopy, and Fourier transform infrared spectroscopy. The relationship between hydrogen dilution ratio and the characteristic of thin film is studied systematically. The mechanism of crystallization is discussed on the basis of the results of diagnosis of plasma by Langmuir probe and optical emission spectra.
[1] Takahashi E, Nishigami Y, Tomyo A, Fujiwara M, Kaki H, Kubota K, Hayashi T, Ogata K, Ebe A, Setsuhara Y 2007 Jpn. J. Appl. Phys. 46 1280
[2] Brinza M, Rath J K, Schropp R E I 2010 Phys. Status Solidi C 7 1093
[3] Wang L J, Zhu M F, Liu F Z, Liu J L, Han Y Q 2003 Acta Phys. Sin. 52 2934 (in Chinese) [汪六九, 朱美芳, 刘丰珍, 刘金龙, 韩一琴 2003 物理学报 52 2934]
[4] Yu W,Meng L H, Yuan J, Lu H J,Wu S J, Fu G S 2010 Sci. China Phys. Mech. Astron. 53 807
[5] Viera G, Huet S, Boufendi L 2001 J. Appl. Phys. 90 4175
[6] Cheng Q J, Xu S Y, Huang S Y, Ostrikov K 2009 Cryst. Growth Des. 9 2863
[7] Shirai H, Saito T, Li Y, Matsui.H 2007 J. Appl. Phys. 101 33531
[8] Morales M, Leconte Y, Rizk R, Chateigner D 2004 J. Appl. Phys. 97 34307
[9] Lucovsky G, Nemanich R J, Knights J C 1979 Phys. Rev. B 19 2064
[10] Sidhu L S, Kosteski T, Zukotynski S 1999 J. Appl. Phys. 85 2574
[11] Maley N 1992 Phys. Rev. B 46 2078
[12] Luo Z, Lin X Y, Lin S H, Yu C Y, Lin K X, Yu Y P, Tan WF 2003 Acta Phys. Sin. 52 169 (in Chinese) [罗志, 林璇英, 林舜辉, 余楚迎, 林揆训, 余云鹏, 谭伟丰 2003 物理学报 52 169]
[13] Langford A A, Fleet M L, Nelson B P, Lanford W A, Maley N 1992 Phys. Rev. B 45 13367
[14] He B, Chen, G H, Zhu X H, Zhang W L, Ding Y, Ma Z J, Gao Z H, Song X M, Deng J X 2006 Chin. Phys. 15 866
[15] Watanabe S 2000 J. Chem. Phys. 113 2423
[16] Higashi G S, Chabal Y J, Trucks GW, Raghavachari K 1990 Appl. Phys. Lett. 56 656
[17] Smets A H M, Kessels WM M, van de Sanden M CM 2003 Appl. Phys. Lett. 82 1547
[18] Touir H, Zellama K, Morhange J F 1999 Phys. Rev. B 59 10067
[19] Messier R 2008 Journal of Nanophotonics 2 21995
[20] Thornton J A 1986 J. Vac. Sci. Technol. A 4 3059
[21] Mullerova J, Sutta P, van Elzakker G, Zeman M, Mikula M 2008 Appl. Surf. Sci. 254 3690
[22] Chen Y S, Xu Y H, Gu J H, Lu J X, Yang S E, Gao X Y 2010 Chin. Phys. B 19 87206
[23] Sriraman S, Agarwal S, Aydil E S, Maroudas D 2002 Nature 418 62
[24] Abelson J R 1993 Appl. Phys. A 56 493
[25] Bharathi P, Suraj K S, Prahlad V, Mukherjee S, Vasu P 2009 Physics of Plasmas 16 53504
[26] Tatarova E, Dias F M, Puac N, Ferreira C M 2007 Plasma Source Sci. Technol. 16 52
[27] Ryan K R, Graham I G 1973 J. Chem. Phys. 59 4260
[28] Bogaerts A, Gijbels R 2002 Phys. Rev. E 65 56402
[29] Ding W Y, Xu J, Li Y Q, Piao Y, Gao P, Deng X L, Dong C 2006 Acta Phys. Sin. 55 1363 (in Chinese) [丁万昱, 徐军, 李艳琴, 朴勇, 高鹏, 邓新绿, 董闯 2006 物理学报 55 1363]
[30] Gerbi J E, Abelson J R 2007 J. Appl. Phys. 101 63508
[31] Lebib S, Roca i Cabarrocas P 2005 J. Appl. Phys. 97 104334
[32] Matsuda A 1999 Thin Solid Films 337 1
[33] Robertson J 2003 J. Appl. Phys. 93 731
[34] Fedders P A 2000 Phys. Rev. B 61 15797
[35] Yang Y H, Katiyar, Feng F G, Maley N, Abelson J R 1994 Appl. Phys. Lett. 65 1769
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[1] Takahashi E, Nishigami Y, Tomyo A, Fujiwara M, Kaki H, Kubota K, Hayashi T, Ogata K, Ebe A, Setsuhara Y 2007 Jpn. J. Appl. Phys. 46 1280
[2] Brinza M, Rath J K, Schropp R E I 2010 Phys. Status Solidi C 7 1093
[3] Wang L J, Zhu M F, Liu F Z, Liu J L, Han Y Q 2003 Acta Phys. Sin. 52 2934 (in Chinese) [汪六九, 朱美芳, 刘丰珍, 刘金龙, 韩一琴 2003 物理学报 52 2934]
[4] Yu W,Meng L H, Yuan J, Lu H J,Wu S J, Fu G S 2010 Sci. China Phys. Mech. Astron. 53 807
[5] Viera G, Huet S, Boufendi L 2001 J. Appl. Phys. 90 4175
[6] Cheng Q J, Xu S Y, Huang S Y, Ostrikov K 2009 Cryst. Growth Des. 9 2863
[7] Shirai H, Saito T, Li Y, Matsui.H 2007 J. Appl. Phys. 101 33531
[8] Morales M, Leconte Y, Rizk R, Chateigner D 2004 J. Appl. Phys. 97 34307
[9] Lucovsky G, Nemanich R J, Knights J C 1979 Phys. Rev. B 19 2064
[10] Sidhu L S, Kosteski T, Zukotynski S 1999 J. Appl. Phys. 85 2574
[11] Maley N 1992 Phys. Rev. B 46 2078
[12] Luo Z, Lin X Y, Lin S H, Yu C Y, Lin K X, Yu Y P, Tan WF 2003 Acta Phys. Sin. 52 169 (in Chinese) [罗志, 林璇英, 林舜辉, 余楚迎, 林揆训, 余云鹏, 谭伟丰 2003 物理学报 52 169]
[13] Langford A A, Fleet M L, Nelson B P, Lanford W A, Maley N 1992 Phys. Rev. B 45 13367
[14] He B, Chen, G H, Zhu X H, Zhang W L, Ding Y, Ma Z J, Gao Z H, Song X M, Deng J X 2006 Chin. Phys. 15 866
[15] Watanabe S 2000 J. Chem. Phys. 113 2423
[16] Higashi G S, Chabal Y J, Trucks GW, Raghavachari K 1990 Appl. Phys. Lett. 56 656
[17] Smets A H M, Kessels WM M, van de Sanden M CM 2003 Appl. Phys. Lett. 82 1547
[18] Touir H, Zellama K, Morhange J F 1999 Phys. Rev. B 59 10067
[19] Messier R 2008 Journal of Nanophotonics 2 21995
[20] Thornton J A 1986 J. Vac. Sci. Technol. A 4 3059
[21] Mullerova J, Sutta P, van Elzakker G, Zeman M, Mikula M 2008 Appl. Surf. Sci. 254 3690
[22] Chen Y S, Xu Y H, Gu J H, Lu J X, Yang S E, Gao X Y 2010 Chin. Phys. B 19 87206
[23] Sriraman S, Agarwal S, Aydil E S, Maroudas D 2002 Nature 418 62
[24] Abelson J R 1993 Appl. Phys. A 56 493
[25] Bharathi P, Suraj K S, Prahlad V, Mukherjee S, Vasu P 2009 Physics of Plasmas 16 53504
[26] Tatarova E, Dias F M, Puac N, Ferreira C M 2007 Plasma Source Sci. Technol. 16 52
[27] Ryan K R, Graham I G 1973 J. Chem. Phys. 59 4260
[28] Bogaerts A, Gijbels R 2002 Phys. Rev. E 65 56402
[29] Ding W Y, Xu J, Li Y Q, Piao Y, Gao P, Deng X L, Dong C 2006 Acta Phys. Sin. 55 1363 (in Chinese) [丁万昱, 徐军, 李艳琴, 朴勇, 高鹏, 邓新绿, 董闯 2006 物理学报 55 1363]
[30] Gerbi J E, Abelson J R 2007 J. Appl. Phys. 101 63508
[31] Lebib S, Roca i Cabarrocas P 2005 J. Appl. Phys. 97 104334
[32] Matsuda A 1999 Thin Solid Films 337 1
[33] Robertson J 2003 J. Appl. Phys. 93 731
[34] Fedders P A 2000 Phys. Rev. B 61 15797
[35] Yang Y H, Katiyar, Feng F G, Maley N, Abelson J R 1994 Appl. Phys. Lett. 65 1769
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