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In the applied magnetic field different magnetic intensities in the permanent magnet were introduced between the substrate and target, so as to study their influence on the properties of silicon thin films with light trapping structure prepared by R.F. magnetron sputtering. The microstructures, surface morphology and optical properties of the films were characterized by X-ray diffraction, atomic force microscope (AFM) and ultraviolet spectrophotometer separately. Results show that the silicon nitride thin films are still in amorphous state although an magnetic field was applied on them; however, when the magnetic field in the center is of 1.5 T, the surface morphology of the films has dramatically changed to a special peak structure, i.e. pyramid-like protuberances which are perpendicular to the basal surface; meanwhile, in the visible and near infrared range, the average transmittance of the sample is the highest, which is more than 90%, nearly twice as much as the transmittance of the sample without applied magnetic field, thus the light trapping effect is the great.
[1] Bao J Y, Guo Z Y, Xi X X, Jeffrey Y, Subhendu G 2010 Phys. Status solidi. A 207 671
[2] Jia S L, Zhang W J, Liu H, Zhang X Q, Guo W, Wu J 2009 Electronic Components and Materials 28 32 (in Chinese) [贾士亮, 张维佳, 刘浩, 张心强, 郭卫, 吴倞 2009 电子元件与材料 28 32]
[3] Kuo M L, Poxson D J, Kim Y S 2008 Opt. Lett. 33 2527
[4] Solanki C S, Bilyalov R R, Poortmans J 2004 Electrochem. Soc. 151 307
[5] Wu Z G, Zhang W W, Bai L F, Wang J, Yan P X 2005 Acta Phys. Sin. 54 1687 (in Chinese) [吴志国, 张伟伟, 白利峰, 王君, 闫鹏勋 2005 物理学报 54 1687]
[6] Zhang D H, Wang Q P, Xue Z Y 2003 Acta Phys. Sin. 52 1484 (in Chinese) [张德恒, 王卿璞, 薛忠营 2003 物理学报 52 1484 ]
[7] Liu H X, Wei H L, Liu Y H, Liu Z L 2001 Function Mater. 32 603 (in Chinese) [刘洪祥, 魏合林, 刘艳红, 刘祖黎 2001 功能材料 32 603]
[8] Tahashi M, Sassa K, Asai S 2002 Materials Transactions 43 2813
[9] Kessels W M M, Hong J, Van Assche F J H 2002 American Vacuum Society 20 1704
[10] Yu W, Liu L H, Hou H H, Ding X C, Han L, Fu G S 2003 Acta Phys. Sin. 52 0687 (in Chinese) [于威, 刘丽辉, 侯海虹, 丁学成, 韩理, 傅广生 2003 物理学报 52 0687]
[11] Zhao X M, Di G Q 2004 Acta Phys. Sin. 53 0306 (in Chinese) [赵新民, 狄国庆 2004 物理学报 53 0306]
[12] Ma T C, Hu X W, Chen Y H 1988 Plasma physics principle (Hefei: University of Science and Technology of China Press) P100 (in Chinese) [马腾才, 胡希伟, 陈银华 1988 等离子体物理原理 (合肥: 中国科技大学出版社) 第100页]
[13] Zhu Y, Di G Q, Zhao D T 2001 Journal of Functional Materials and Devices 7 0384 (in Chinese) [朱炎, 狄国庆, 赵登涛 2001 功能材料与器件学报 7 0384]
[14] Cao Y L 2011 M.S. Dissertation (Dalian: Dalian University of Technology) (in Chinese) [曹英丽 2011 硕士学位论文 (大连: 大连理工大学)]
[15] Hua X S, Zhang Y J, Wang H W 2009 Solar Energy Materials and Solar Cells 10 27
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[1] Bao J Y, Guo Z Y, Xi X X, Jeffrey Y, Subhendu G 2010 Phys. Status solidi. A 207 671
[2] Jia S L, Zhang W J, Liu H, Zhang X Q, Guo W, Wu J 2009 Electronic Components and Materials 28 32 (in Chinese) [贾士亮, 张维佳, 刘浩, 张心强, 郭卫, 吴倞 2009 电子元件与材料 28 32]
[3] Kuo M L, Poxson D J, Kim Y S 2008 Opt. Lett. 33 2527
[4] Solanki C S, Bilyalov R R, Poortmans J 2004 Electrochem. Soc. 151 307
[5] Wu Z G, Zhang W W, Bai L F, Wang J, Yan P X 2005 Acta Phys. Sin. 54 1687 (in Chinese) [吴志国, 张伟伟, 白利峰, 王君, 闫鹏勋 2005 物理学报 54 1687]
[6] Zhang D H, Wang Q P, Xue Z Y 2003 Acta Phys. Sin. 52 1484 (in Chinese) [张德恒, 王卿璞, 薛忠营 2003 物理学报 52 1484 ]
[7] Liu H X, Wei H L, Liu Y H, Liu Z L 2001 Function Mater. 32 603 (in Chinese) [刘洪祥, 魏合林, 刘艳红, 刘祖黎 2001 功能材料 32 603]
[8] Tahashi M, Sassa K, Asai S 2002 Materials Transactions 43 2813
[9] Kessels W M M, Hong J, Van Assche F J H 2002 American Vacuum Society 20 1704
[10] Yu W, Liu L H, Hou H H, Ding X C, Han L, Fu G S 2003 Acta Phys. Sin. 52 0687 (in Chinese) [于威, 刘丽辉, 侯海虹, 丁学成, 韩理, 傅广生 2003 物理学报 52 0687]
[11] Zhao X M, Di G Q 2004 Acta Phys. Sin. 53 0306 (in Chinese) [赵新民, 狄国庆 2004 物理学报 53 0306]
[12] Ma T C, Hu X W, Chen Y H 1988 Plasma physics principle (Hefei: University of Science and Technology of China Press) P100 (in Chinese) [马腾才, 胡希伟, 陈银华 1988 等离子体物理原理 (合肥: 中国科技大学出版社) 第100页]
[13] Zhu Y, Di G Q, Zhao D T 2001 Journal of Functional Materials and Devices 7 0384 (in Chinese) [朱炎, 狄国庆, 赵登涛 2001 功能材料与器件学报 7 0384]
[14] Cao Y L 2011 M.S. Dissertation (Dalian: Dalian University of Technology) (in Chinese) [曹英丽 2011 硕士学位论文 (大连: 大连理工大学)]
[15] Hua X S, Zhang Y J, Wang H W 2009 Solar Energy Materials and Solar Cells 10 27
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