Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile

Tang Zheng-Xia; Shen Hong-Lie; Jiang Feng; Fang Ru; Lu Lin-Feng; Huang Hai-Bin; Cai Hong

doi:10.7498/aps.59.8770

Abstract

In order to shorten processing time for large grain polycrystalline Si thin films prepared by aluminum induced crystallization, the stack of a-Si/SiO2/Al is deposited by radio frequency magnetron sputtering and annealed at two different irregular temperature profiles. The influence of irregular temperature profile on the processing of amorphous silicon prepared by the aluminum induced crystallization is investigated and the condition is discussed under which whether new nucleation appears when the annealing temperature increases. It turns out that the formation of nucleation is governed by the relationship among the grain radium at low temperature, the distance of depletion region, and the distance of adjacent grains.

Keywords:

Authors and contacts

1.
College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

References

[1]	Widenborg P I, Aberle A G 2002 J. Cryst. Growth 242 270
[2]	Gordon I, Carnel L, Gestel D V, Beaucarne G, Poortmans J 2008 Thin Solid Films 516 6984
[3]	Zhao S Y, Wu C Y, Liu Z J, Li X D, Wang Z, Meng Z G, Xiong S Z, Zhang F 2006 Acta Phys. Sin. 55 6095 (in Chinese) [赵淑云、吴春亚、刘召军、李学冬、王中、孟志国、熊绍珍、张芳 2006 物理学报 55 6095]
[4]	Luo C, Meng Z G, Wang S, Xiong S Z 2009 Acta Phys. Sin. 58 6560 (in Chinese) [罗冲、孟志国、王烁、熊绍珍 2009物理学报 58 6560]
[5]	Nast O, Wenham S R 2000 J. Appl. Phys. 88 124
[6]	Sarikov A, Schneider J, Muske M, Gall S, Fuhs W 2006 J. Non-Cryst. Solids 352 980
[7]	Schneider J, Schneider A, Sarikov A, Klein J, Muske M, Gall S, Fuhs W 2006 J. Non-Cryst. Solids 352 972
[8]	Schneider J, Heimburger R, Klein J, Muske M, Gall S, Fuhs W 2005 Thin Solid Films 487 107
[9]	Fuhs W, Gall S, Rau B, Schmidt M, Schneider J 2004 Solar Energy 77 961
[10]	Pihan E, Focsa A, Slaoui A, Maurice C 2006 Thin Solid Films 511—512 15
[11]	Tang Z X, Shen H L , Lu L F, Jiang F, Guo Y, Shen J C 2009 J. Optoelectron. Adv. Mater. 11 1077
[12]	Zener C 1949 J. Appl. Phys. 20 95

Cited By

[1]	Widenborg P I, Aberle A G 2002 J. Cryst. Growth 242 270
[2]	Gordon I, Carnel L, Gestel D V, Beaucarne G, Poortmans J 2008 Thin Solid Films 516 6984
[3]	Zhao S Y, Wu C Y, Liu Z J, Li X D, Wang Z, Meng Z G, Xiong S Z, Zhang F 2006 Acta Phys. Sin. 55 6095 (in Chinese) [赵淑云、吴春亚、刘召军、李学冬、王中、孟志国、熊绍珍、张芳 2006 物理学报 55 6095]
[4]	Luo C, Meng Z G, Wang S, Xiong S Z 2009 Acta Phys. Sin. 58 6560 (in Chinese) [罗冲、孟志国、王烁、熊绍珍 2009物理学报 58 6560]
[5]	Nast O, Wenham S R 2000 J. Appl. Phys. 88 124
[6]	Sarikov A, Schneider J, Muske M, Gall S, Fuhs W 2006 J. Non-Cryst. Solids 352 980
[7]	Schneider J, Schneider A, Sarikov A, Klein J, Muske M, Gall S, Fuhs W 2006 J. Non-Cryst. Solids 352 972
[8]	Schneider J, Heimburger R, Klein J, Muske M, Gall S, Fuhs W 2005 Thin Solid Films 487 107
[9]	Fuhs W, Gall S, Rau B, Schmidt M, Schneider J 2004 Solar Energy 77 961
[10]	Pihan E, Focsa A, Slaoui A, Maurice C 2006 Thin Solid Films 511—512 15
[11]	Tang Z X, Shen H L , Lu L F, Jiang F, Guo Y, Shen J C 2009 J. Optoelectron. Adv. Mater. 11 1077
[12]	Zener C 1949 J. Appl. Phys. 20 95

[1]	Wang Yi, Yang Chen, Guo Xiang, Wang Ji-Hong, Liu Xue-Fei, Wei Jie-Ming, Lang Qi-Zhi, Luo Zi-Jiang, Ding Zhao. Thermodynamic analysis of Al0.17Ga0.83As/GaAs (001) in annealing process. Acta Physica Sinica, 2018, 67(8): 080503. doi: 10.7498/aps.67.20172718
[2]	Zhang Bin, Wang Wei-Li, Niu Qiao-Li, Zou Xian-Shao, Dong Jun, Zhang Yong. Effects of annealing in H2 atomsphere on optoelectronical properties of Nb-doped TiO2 thin films. Acta Physica Sinica, 2014, 63(6): 068102. doi: 10.7498/aps.63.068102
[3]	Du Yun, Lu Nian-Peng, Yang Hu, Ye Man-Ping, Li Chao-Rong. Electrical, optical properties and structure characterization of In-doped copper nitride thin film. Acta Physica Sinica, 2013, 62(11): 118104. doi: 10.7498/aps.62.118104
[4]	Chen Ying-Tian, T. H. Ho. Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(7): 078104. doi: 10.7498/aps.60.078104
[5]	Jia Ming, Tian Zhong-Liang, Lai Yan-Qing, Li Jie, Yi Ji-Guang, Yan Jian-Feng, Liu Ye-Xiang. Study on the removal of impurities in silicon by electrorefining. Acta Physica Sinica, 2010, 59(3): 1938-1945. doi: 10.7498/aps.59.1938
[6]	Fan Tian-You, Fan Lei, Mai Y. W.. Approximate analytic and numerical study on indentation of cellular/foam film with glass substrate. Acta Physica Sinica, 2009, 58(13): 189-S192. doi: 10.7498/aps.58.189
[7]	Zhong Chong-Gui, Jiang Qing, Fang Jing-Huai, Jiang Xue-Fan, Luo Li-Jin. Electric-field-induced magnetization in 1-3 type multiferroic nanocomposite thin film. Acta Physica Sinica, 2009, 58(10): 7227-7234. doi: 10.7498/aps.58.7227
[8]	Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen. Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica, 2009, 58(9): 6560-6565. doi: 10.7498/aps.58.6560
[9]	Liao Guo-Jin, Yan Shao-Feng, Ba De-Chun. The blue luminescence of cerium doped aluminum oxide thin film. Acta Physica Sinica, 2008, 57(11): 7327-7332. doi: 10.7498/aps.57.7327
[10]	Li Shi-Bin, Wu Zhi-Ming, Yuan Kai, Liao Nai-Man, Li Wei, Jiang Ya-Dong. Study on thermal conductivity of hydrogenated amorphous silicon films. Acta Physica Sinica, 2008, 57(5): 3126-3131. doi: 10.7498/aps.57.3126
[11]	Li He, Li Xue-Dong, Li Juan, Wu Chun-Ya, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Li-Zhu. Investigation on the improvement of the stability and uniformity of solution-based metal-induced crystallization poly-Si using surface-embellishment. Acta Physica Sinica, 2008, 57(4): 2476-2480. doi: 10.7498/aps.57.2476
[12]	Zhang Hong-Ying, Wu Shi-Gang. The dynamic process of thin films damage induced by femtosecond laser. Acta Physica Sinica, 2007, 56(9): 5314-5317. doi: 10.7498/aps.56.5314
[13]	Xia Zhi-Lin, Shao Jian-Da, Fan Zheng-Xiu. Effect of bulk inclusion in films on damage probability. Acta Physica Sinica, 2007, 56(1): 400-406. doi: 10.7498/aps.56.400
[14]	Di Yu-Xian, Ji Xin-Hua, Hu Ming, Qin Yu-Wen, Chen Jin-Long. Residual stress measurement of porous silicon thin film by substrate curvature method. Acta Physica Sinica, 2006, 55(10): 5451-5454. doi: 10.7498/aps.55.5451
[15]	Yu Yun-Peng, Lin Xuan-Ying, Lin Shun-Hui, Huang Rui. Influence of light exposure and applied bias on the conductivity of microcrystalline silicon films at room temperature. Acta Physica Sinica, 2006, 55(4): 2038-2043. doi: 10.7498/aps.55.2038
[16]	Zhao Shu-Yun, Wu Chun-Ya, Liu Zhao-Jun, Li Xue-Dong, Wang Zhong, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang. Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source. Acta Physica Sinica, 2006, 55(11): 6095-6100. doi: 10.7498/aps.55.6095
[17]	Zhou Feng, Liang Kai-Ming, Wang Guo-Liang. Study on the phase transformation behavior of TiO2 thin films in an electric field. Acta Physica Sinica, 2005, 54(6): 2863-2867. doi: 10.7498/aps.54.2863
[18]	Zhang Jian-Min, Xu Ke-Wei. . Acta Physica Sinica, 2002, 51(11): 2562-2566. doi: 10.7498/aps.51.2562
[19]	Zhang Shi-Bin, Liao Xian-Bo, An Long, Yang Fu-Hua, Kong Guang-Lin, Wang Yong-Qian, Xu Yan-Yue, Chen Chang-Yong, Diao Hong-Wei. . Acta Physica Sinica, 2002, 51(8): 1811-1815. doi: 10.7498/aps.51.1811
[20]	WU FENG-MIN, SHI JIAN-QING, WU ZI-QIN. SIMULATION OF THE INITIAL GROWTH OF METAL THIN FILMS AT HIGH TEMPERATURE. Acta Physica Sinica, 2001, 50(8): 1555-1559. doi: 10.7498/aps.50.1555

Catalog

Vol. 59, Issue 12 - 2010-06-20

Metrics

Abstract views: 8176
PDF Downloads: 776
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板