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Anisotropic semi-Dirac materials exhibit unique manipulation selectivity in carrier conduction. Currently, the behavior of semi-Dirac electrons has been successfully observed in black phosphorus thin films and topological metal ZrSiS materials, respectively. That is, near the semi-Dirac point, both linear and parabolic dispersion relations exist, along two mutually perpendicular high-symmetry paths respectively. Based on first-principles calculations, this article predicts that semi-Dirac electronic states can also be realized in the structural system of anisotropic stacked graphene nanoribbon arrays on a graphene substrate. We further investigated the effects of nanoribbon width, the ratio of graphene width to nanoribbon width in the supercell, and external electric field on this semi-Dirac system band. It is worth noting that, the process of the conduction band and valence band transitioning from non-conical-contact to conical-contact under an applied perpendicular electric field to form the semi-Dirac point was analyzed through computational simulation. Correspondingly, the system transforms from a metal with direction-dependent flat bands near the Fermi level to a direct bandgap semiconductor. The research provides theoretical reference for the realization and tuning semi-Dirac electronic states in two-dimensional material nanostructures.
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Keywords:
- graphene and nanoribbon /
- anisotropic-stacked /
- semi-Dirac electronic states /
- first-principles calculation
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