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High-pressure polarized Raman spectroscopy (HPRS) refers to a spectroscopic technique in which a diamond anvil cell (DAC) is employed as the pressure-generating device, and the polarization orientations of both incident and scattered light are systematically controlled to measure the angular dependence of Raman spectral intensities under varying pressures. This enables the quantitative extraction of the pressure evolution of Raman tensor elements. In this study, we developed an in-situ high-pressure polarized Raman setup based on a backscattering configuration incorporating a half-wave plate, allowing continuous variation of the polarization angle without rotating the sample. Quantitative determination of Raman tensor elements was achieved through polar coordinate fitting of the measured intensity profiles. Singlecrystal Si(100), commonly used for Raman calibration, and two-dimensional Te(110) flakes exhibiting in-plane anisotropy were selected as model systems for investigation. Our results show that over the pressure range of 0~12 GPa, the angular distribution pattern and periodicity of Si(100) remain unchanged, while the main Raman peak exhibits an approximately linear blue shift with increasing pressure. The Raman tensorelement associated with the active mode decreases according to an inverse power-law function, reflecting the response of the polarizability derivative to volume compression in the absence of phase transitions. For two-dimensional Te(110), the in-plane anisotropy increases with pressure, accompanied by deviations of certain modes from ideal symmetry-predicted behavior. Notably, the ratio of Raman tensor elements displays an inflection point near 1.5 GPa, transitioning from a decreasing to an increasing trend, with clearly observable changes in polarized Raman responses within the 1.2~1.6 GPa range. It is in close proximity to the electronic structure phase transition point determined from transport experiments (~2 GPa). Collectively, studies on single-crystal Si(100) and two-dimensional Te(110) demonstrate that HPRS is a robust in-situ method for probing symmetry evolution, anisotropic behavior, and incipient electronic rearrangements in materials under compression.
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