[1] Bartoli F, Esterowitz L, Kruer M, Allen R 1977 Appl. Opt. 16 2934
[2] Bartoli F J, Esterowitz L, Kruer M R, Allen R E 1975 Appl. Opt. 14 2499
[3] Bartoli F, Esterowitz L, Allen R, Kruer M 1976 J. Appl. Phys. 47 2875
[4] Xu X Y, Ye Z H, Li Z F, Lu W 2007 Acta Phys. Sin. 56 2882 (in Chinese) [徐向晏, 叶振华, 李志锋, 陆卫 2007 物理学报 56 2882]
[5] HuWD, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Cheng X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) [胡伟达, 殷菲, 叶振华, 全知觉, 胡晓宁, 李志锋, 陈效双, 陆卫 2009 物理学报 58 7891]
[6] Liu X Y, Ma W Q, Zhang Y H, Huo Y H, Zhong M, Chen L H 2010 Acts Phys. Sin. 59 5720 (in Chinese) [刘小宇, 马文全, 张艳华, 霍永恒, 种明, 陈良惠 2010 物理学报 59 5720]
[7] He Y X Jiang H M 2008 High Power Laser and Particle Beams 20 1233 (in Chinese) [贺元兴, 江厚满 2008 强激光与粒子束 20 1233]
[8] Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Science Press ) pp363, 467 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第363,467页]
[9] Li L, Lu Q S 2008 Acta Opt. Sin. 28 1953 (in Chinese) [李莉, 陆启生 2008 光学学报 28 1953]
[10] Wang R, Si L, Lu Q S 2003 Laser & Infrared 33 335 (in Chinese) [王睿, 司磊, 陆启生 2009 激光与红外 33 335]
[11] Li X Q, Cheng X A, Wang R 2003 China J. Laser. 30 1070 (in Chinese) [李修乾, 程湘爱, 王睿 2003 中国激光 28 1070]
[12] Li X Q, Cheng X A, Wang R 2003 High Power Laser and Partial Beams 15 40 (in Chinese) [李修乾, 程湘爱, 王睿 2003 强激光与粒子束 15 40]
[13] Ma L Q, Lu Q S 2006 High Power Laser and Partial Beams 18 201 (in Chinese) [马丽芹, 陆启生 2006 强激光与粒子束 18 201]
[14] Ma L Q, Lu Q S, Du S J 2004 China J. Laser. 31 342 (in Chinese) [马丽芹, 陆启生, 杜少军 2004 中国激光 31 342]
[15] Sun C W, Lu Q S 2002 Effect of Laser Irradiation (Beijing: National Defense Industry Press ) pp341—360 (in Chinese) [孙承伟, 陆启生 2002 激光辐照效应 (北京: 国防工业出版社) 第341---360页]
[16] Varshni Y P 1967 Physica 34 149
[17] Meyer J R 1978 Bull. Am. Phys. Soc. 23 328
[18] Srinivasan K, Zhi G Y 2007 J. Appl. Phys 101 113104
[19] Liu E K, Zhu B S, Luo J S 2009 Semiconductor Phys. (Beijing: Publishing House of Electronics Industry ) pp76 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2009 半导体物理学 (北京: 电子工业出版社) 第76页]
[20] Sadao A, Ji Z G 2009 Properties of GroupIV, II-V and II-VI Semiconductors (Beijing: Science Press ) pp113, 114 (in Chinese) [Sadao Adachi 著 季振国 译 2009 IV族, III-V 族和 II-VI 族半导体材料的特性(北京: 科学出版社)第113,114页]