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摘要: 用电离N2产生的离子束作为外延生长氮化物的N源已获得成功,在GaAs(100)衬底上长出了具有立方结晶的GaN薄膜,其(200)X射线衍射峰宽仅23′。并用高分辨率电子能量损失谱测到立方GaN的表面光学声子出现在损失能量为82meV处.
Abstract: The ion beam producing ionization of N= has been successfully utilized as the N source for nitride growth. Cubic GaN thin films are thus grown on GaAs(100) substrates. The width of the (200) X-ray diffraction peak of the epilayer is 23′ only, and the high-resolution electron energy loss spectroscopy measurements show that the optical surface phonon of cubic GaN appears at the loss energy of 82 meV.