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物理学报. 1994, 43(7): 1123-1128.
doi: 10.7498/aps.43.1123.
GaN异质外延的离子化氮源方法
- 收稿日期: 1993-08-09
- 刊出日期: 1994-07-20
摘要: 用电离Ｎ２产生的离子束作为外延生长氮化物的Ｎ源已获得成功，在ＧａＡｓ（１００）衬底上长出了具有立方结晶的ＧａＮ薄膜，其（２００）X射线衍射峰宽仅２３′。并用高分辨率电子能量损失谱测到立方ＧａＮ的表面光学声子出现在损失能量为８２ｍｅＶ处．
English Abstract
HETEROEPITAXY OF GaN BY USING AN IONIZED N SOURCE
- Received Date:
09 August 1993
- Published Online:
20 July 1994
Abstract: The ion beam producing ionization of N= has been successfully utilized as the N source for nitride growth. Cubic GaN thin films are thus grown on GaAs(100) substrates. The width of the (200) X-ray diffraction peak of the epilayer is 23′ only, and the high-resolution electron energy loss spectroscopy measurements show that the optical surface phonon of cubic GaN appears at the loss energy of 82 meV.
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