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物理学报. 2001, 50(7): 1396-1400.
doi: 10.7498/aps.50.1396.
微波等离子体化学气相沉积法制备C3N4薄膜的结构研究
- 收稿日期: 2000-11-15
- 修回日期: 2001-02-06
- 刊出日期: 2001-07-20
摘要: 采用微波等离子体化学气相沉积法,用高纯氮气(99.999%)和甲烷(99.9%)作反应气体,在单晶Si(100)基片上沉积C3N4薄膜.利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成.X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β-C3N4和α-C3N4组成,并且这些结果与α-C3N4相符合较好.由虎克定律近似关
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关键词:
- C3N4 /
- 微波等离子体化学气相沉积法 /
- 薄膜沉积
English Abstract
STRUCTURAL CHARACTERIZATION OF C3N4 THIN FILMS SYNTHESIZED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION
- Received Date:
15 November 2000
- Accepted Date:
06 February 2001
- Published Online:
20 July 2001
Abstract: Crystalline carbon nitride films have been synthesized on Si substrates by microwave plasma chemical vapor deposition technique, using a gas mixture of nitrogen and methane. Scanning electron microscopy shows that the film consisted of hexagonal crystalline rods. X-ray diffraction and transmission electron microscopy indicate the films are mainly composed of α-and β-C3N4, and these results match more closely with α-C3N4 than with β-C3N4 phase. Fourier transform infrared (FTIR) and Raman spectra of carbon nitride were calculated through Hooke's law. The observed FTIR and Raman spectra support the existence of α- and β-C3N4 in the films.
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