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摘要: 采用微波等离子体化学气相沉积法,用高纯氮气(99.999%)和甲烷(99.9%)作反应气体,在单晶Si(100)基片上沉积C3N4薄膜.利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成.X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β-C3N4和α-C3N4组成,并且这些结果与α-C3N4相符合较好.由虎克定律近似关
Abstract: Crystalline carbon nitride films have been synthesized on Si substrates by microwave plasma chemical vapor deposition technique, using a gas mixture of nitrogen and methane. Scanning electron microscopy shows that the film consisted of hexagonal crystalline rods. X-ray diffraction and transmission electron microscopy indicate the films are mainly composed of α-and β-C3N4, and these results match more closely with α-C3N4 than with β-C3N4 phase. Fourier transform infrared (FTIR) and Raman spectra of carbon nitride were calculated through Hooke's law. The observed FTIR and Raman spectra support the existence of α- and β-C3N4 in the films.