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制备了给体材料为poly(3-hexylthiophene)(P3HT),受体材料为[6,6]-phenyl-C60-butyric acid methyl ester(PCBM),器件结构为ITO/ZnO/P3HT:PCBM/NPB(0,1,5,10,25 nm)/Ag的反型体异质结聚合物太阳能电池. 不同厚度的N,N’-diphenyl-N,N’-bis(1-naphthyl)-1,1’-biphenyl-4,4’-diamine(NPB)阳极缓冲层被用来改善器件性能,研究了NPB阳极缓冲层对器件特性的影响. 研究发现,1 nm厚的NPB改善了器件的载流子收集效率,增加了器件的短路电流与开路电压. 当NPB缓冲层的厚度达到25 nm时,过厚的NPB导致串联电阻增加,使得器件特性大幅下降. 通过电容-电压测试,进一步研究了不同厚度NPB对器件载流子注入与收集的影响,1 nm厚的NPB修饰并没有改善器件的载流子注入但是增加了器件对光生载流子的收集效率,过厚的NPB使得自由载流子的复合占据主导. 适合厚度的NPB可以作为一种阳极缓冲层材料应用于聚合物太阳能电池提高器件特性.
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[2] Yook K S, Lee J Y 2010 J. Ind. Eng. Chem. 16 230
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[22] He Z C, Zhong C M, Huang X, Wong W Y, Wu H B, Chen L W, Su S J, Cao Y 2011 Adv. Mater. 23 4636
[23] Fabregat-Santiago F, Garcia-Belmonte G, Mora-Seró I, Bisquert, J 2011 Phys. Chem. Chem. Phys. 13 9083
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[25] Mihailetchi V D, Wildeman J, Blom P W M 2005 Phys. Rev. Lett. 94 126602
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[1] Jonsson S K M, Carlegrim E, Zhang F, Salaneck W R, Fahlman M 2005 Jpn. J. Appl. Phys. 44 3695
[2] Yook K S, Lee J Y 2010 J. Ind. Eng. Chem. 16 230
[3] Liu X D, Leeb J Y, Guob L J 2013 Org. Electron. 14 469
[4] Zhao D W, Tan S T, Ke L, Liu P, Kyaw AKK, Sun X W, Lo G Q, Kwong D L 2010 Sol. Energ. Mater. Sol. C 94 985
[5] Pan H B, Zuo L J, Fu W F, Fan C C, Andreasen B, Jiang X Q, Norrman K, Krebs F C, Chen H Z 2013 Org. Electron. 14 797
[6] Shrotriya V, Li G, Yao Y, Chu C-W, Yang Y 2006 Appl. Phys. Lett. 88 073508
[7] Liu X D, Xu Z, Zhang F J, Zhao S L, Zhang T H, Gong W, Song J L, Kong C, Yan G, Xu X R 2010 Chin. Phys. B 19 118601
[8] Liu X D, Xu Z, Zhang F J, Zhao S L, Zhang T H, Gong W, Yan G, Kong C, Wang Y S, Xu X R 2011 Chin. Phys. B 20 068801
[9] Cai W Z, Gong X, Cao Y 2010 Sol. Energ. Mater. Sol. C 94 114
[10] Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[11] Zhang F J, Zhao D W, Zhuo Z L, Wang H, Xu Z, Wang Y S 2010 Sol. Energ. Mater. Sol. C 94 2416
[12] Li Z F, Wu Z X, Jiao B, Liu P, Wang D D, Hou X 2012 Chem. Phys. Lett. 527 36
[13] Xie G H, Xue Q, Chen P, Tao C, Zhao C M, Lu J H, Gong Z X, Zhang T Y, Huang R, Du H 2010 Org. Electron. 11 407
[14] Halls M D, Tripp C P, Schlegel H B 2001 Phys. Chem. Chem. Phys. 3 2131
[15] Wang J C, Ren X C, Shi S Q, Leung C W, Chan P K L 2011 Org. Electron. 12 880
[16] Zhao C, Qiao X F, Chen B B, Hu B 2013 Org. Electron. 14 2192
[17] Chen B B, Qiao X F, Liu C M, Zhao C, Chen H C, Wei K H, Hu B 2013 Appl. Phys. Lett. 102 193302
[18] Shrotriya V, Yang Y 2005 J. Appl. Phys. 97 054504
[19] Tsang S W, So S K, Xu J B 2006 J. Appl. Phys. 99 013706
[20] Garcia-Belmonte G, Munar A, Barea E M, Bisquert J, Ugarte I, Pacios R 2008 Org. Electron. 9 847
[21] He C, Zhong C M, Wu H B, Yang R Q, Yang W, Huang F, Bazan G C, Cao Y 2010 J. Mater. Chem. 20 2617
[22] He Z C, Zhong C M, Huang X, Wong W Y, Wu H B, Chen L W, Su S J, Cao Y 2011 Adv. Mater. 23 4636
[23] Fabregat-Santiago F, Garcia-Belmonte G, Mora-Seró I, Bisquert, J 2011 Phys. Chem. Chem. Phys. 13 9083
[24] Wang M D, Zheng S Z, Wan X, Su Y R, Ke N, Zhao N, Wong K Y, Xu J B 2013 Sol. Energ. Mater. Sol. C 108 17
[25] Mihailetchi V D, Wildeman J, Blom P W M 2005 Phys. Rev. Lett. 94 126602
[26] Shuttle C G, Hamilton R, O’Regan B C, Nelson J, Durrant J R 2010 Proc. Natl. Acad. Sci. 107 16448
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