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我们建立了椭圆偏振光谱仪装置,提出一种较简便的测定方法(测Imax,Imin,θmin,算(ψ,Δ)-λ),并对具有不同厚度氧化硅膜的硅样品进行了测量。还在理论上计算了光谱曲线,与实验结果基本相符。最后,对比了测定膜厚的偏振光谱法与消光法。An apparatus for measuring the ellipsometric spectra has been set up in our laboratory. From the experimental values of Imax,Imin and θmin, it is easy to determine the ellipsometric parameters ψ, △ as functions of wavelengths. The ellipsometric spectra of SiO2 films of several thicknesses on silicon have been determined. When comparing the experimental data with the theoretical curves calculated by computer, we find that they are generally in agreement. The ellipsometric spectrum method for measuring the film thickness has also been compared with the extinction method.
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