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[1] Chu J H 2005 Physics of Narrow Gap Semiconductors (Beijing: Science Press) p758 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第758页]
[2] Datta S, Das B 1990 Appl. Phys. Lett. 56 665
[3] Bychkov Yu A, Rashba E I 1984 JETP lett. 39 78
[4] Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta. Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 物理学报 55 2955]
[5] Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta. Phys. Sin. 53 1186 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1186]
[6] Engels G, Lange J, Schäpers Th, Lüh H 1997 Phys. Rev. B 55 R1958
[7] Nitta J, Akazaki T, Takayanagi H, Enoki T 1997 Phys. Rev. Lett. 78 1335
[8] Das B, Miller D C, Datta S, Reifenberger R, Hong W P, Bhattacharya P K, Singh J, Jaffe M 1989 Phys. Rev. B 39 1411
[9] Zhu B, Gui Y S, Qiu Z J, Zhou W Z, Yao W, Guo S L, Chu J H, Zhang F J 2006 Acta. Phys. Sin. 55 0786 (in Chinese) [朱博, 桂永胜, 仇志军, 周文政, 姚炜, 郭少令, 褚君浩, 张福甲 2006 物理学报 55 0786]
[10] Gui Y S, Hu C M, Chen Z H, Zheng G Z, Guo S L, Chu J H, Chen J X, Li A Z 2000 Phys. Rev. B 61 7237
[11] Nitta J, Lin Y, Akazaki T, Koga T 2003 Appl. Phys. Lett. 83 4565
[12] Dobers M, Vieren J P, Guldner Y, Bove P, Omnes F, Razeghi M 1989 Phys. Rev. B 40 8075
[13] Savel'ev I G, Kreshchuk A M, Novikov S V, Shik A Y, Remenyi G, Kovács Gy, Pôdör B, Gombos G 1996 J. Phys.: Condens. Matter 8 9025
[14] Das B, Datta S, Reifenberger R 1990 Phys. Rev. B 41 8278
[15] Gao H L, Li D L, Zhou W Z, Shang L Y, Wang B Q, Zhu Z P, Zeng Y P 2007 Acta. Phys. Sin. 56 4955 (in Chinese) [高宏玲, 李东临, 周文政, 商丽燕, 王宝强, 朱战平, 曾一平 2007 物理学报 56 4955]
[16] Shang L Y, Lin T, Zhou W Z, Huang Z M, Li D L, Gao H L, Cui L J, Zeng Y P, Guo S L, Chu J H 2008 Acta. Phys. Sin. 57 2481 (in Chinese) [商丽燕, 林铁, 周文政, 黄志明, 李东临, 高宏玲, 崔利杰, 曾一平, 郭少令, 褚君浩 2008 物理学报 57 2481]
[17] Zhou Y M, Shang L Y, Yu G, Gao K H, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N, Austing D G 2009 J. Appl. Phys. 106 073722
[18] Lee Patrick A, Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[19] Coleridge P T, Stoner R, Fletcher R 1989 Phys. Rev. B 39 1120
[20] Studenikin S A, Coleridge P T, Yu G, Poole P J 2005 Semicond. Sci. Technol. 20 1103
[21] Luo J, Munekata H, Fang F F, Stiles P J 1990 Phys. Rev. B 41 7685
[22] Cavalheiro A, da Silva E C F, Takahashi E K, Quivy A A, Leite J R, Meneses E A 2002 Phys. Rev. B 65 075320
[23] Henriques A B 1994 Phys. Rev. B 50 8568
[24] Nicholas R J, Brummell M A, Portal J C, Cheng K Y, Cho A Y, Pearsall T P 1983 Solid State Commun. 45 911
[25] Perea Ernesto H, Mendez Emilio E, Fonstad Clifton G 1980 Appl. Phys. Lett. 36 978
[26] Vehse Deborah L, Hummel S G, Cox H M, DeRosa F, Allen S J, Jr. 1986 Phys. Rev. B 33 5862
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[1] Chu J H 2005 Physics of Narrow Gap Semiconductors (Beijing: Science Press) p758 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第758页]
[2] Datta S, Das B 1990 Appl. Phys. Lett. 56 665
[3] Bychkov Yu A, Rashba E I 1984 JETP lett. 39 78
[4] Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta. Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 物理学报 55 2955]
[5] Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta. Phys. Sin. 53 1186 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1186]
[6] Engels G, Lange J, Schäpers Th, Lüh H 1997 Phys. Rev. B 55 R1958
[7] Nitta J, Akazaki T, Takayanagi H, Enoki T 1997 Phys. Rev. Lett. 78 1335
[8] Das B, Miller D C, Datta S, Reifenberger R, Hong W P, Bhattacharya P K, Singh J, Jaffe M 1989 Phys. Rev. B 39 1411
[9] Zhu B, Gui Y S, Qiu Z J, Zhou W Z, Yao W, Guo S L, Chu J H, Zhang F J 2006 Acta. Phys. Sin. 55 0786 (in Chinese) [朱博, 桂永胜, 仇志军, 周文政, 姚炜, 郭少令, 褚君浩, 张福甲 2006 物理学报 55 0786]
[10] Gui Y S, Hu C M, Chen Z H, Zheng G Z, Guo S L, Chu J H, Chen J X, Li A Z 2000 Phys. Rev. B 61 7237
[11] Nitta J, Lin Y, Akazaki T, Koga T 2003 Appl. Phys. Lett. 83 4565
[12] Dobers M, Vieren J P, Guldner Y, Bove P, Omnes F, Razeghi M 1989 Phys. Rev. B 40 8075
[13] Savel'ev I G, Kreshchuk A M, Novikov S V, Shik A Y, Remenyi G, Kovács Gy, Pôdör B, Gombos G 1996 J. Phys.: Condens. Matter 8 9025
[14] Das B, Datta S, Reifenberger R 1990 Phys. Rev. B 41 8278
[15] Gao H L, Li D L, Zhou W Z, Shang L Y, Wang B Q, Zhu Z P, Zeng Y P 2007 Acta. Phys. Sin. 56 4955 (in Chinese) [高宏玲, 李东临, 周文政, 商丽燕, 王宝强, 朱战平, 曾一平 2007 物理学报 56 4955]
[16] Shang L Y, Lin T, Zhou W Z, Huang Z M, Li D L, Gao H L, Cui L J, Zeng Y P, Guo S L, Chu J H 2008 Acta. Phys. Sin. 57 2481 (in Chinese) [商丽燕, 林铁, 周文政, 黄志明, 李东临, 高宏玲, 崔利杰, 曾一平, 郭少令, 褚君浩 2008 物理学报 57 2481]
[17] Zhou Y M, Shang L Y, Yu G, Gao K H, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N, Austing D G 2009 J. Appl. Phys. 106 073722
[18] Lee Patrick A, Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[19] Coleridge P T, Stoner R, Fletcher R 1989 Phys. Rev. B 39 1120
[20] Studenikin S A, Coleridge P T, Yu G, Poole P J 2005 Semicond. Sci. Technol. 20 1103
[21] Luo J, Munekata H, Fang F F, Stiles P J 1990 Phys. Rev. B 41 7685
[22] Cavalheiro A, da Silva E C F, Takahashi E K, Quivy A A, Leite J R, Meneses E A 2002 Phys. Rev. B 65 075320
[23] Henriques A B 1994 Phys. Rev. B 50 8568
[24] Nicholas R J, Brummell M A, Portal J C, Cheng K Y, Cho A Y, Pearsall T P 1983 Solid State Commun. 45 911
[25] Perea Ernesto H, Mendez Emilio E, Fonstad Clifton G 1980 Appl. Phys. Lett. 36 978
[26] Vehse Deborah L, Hummel S G, Cox H M, DeRosa F, Allen S J, Jr. 1986 Phys. Rev. B 33 5862
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