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基于栅绝缘层表面修饰的有机场效应晶体管迁移率的研究进展

石巍巍 李雯 仪明东 解令海 韦玮 黄维

基于栅绝缘层表面修饰的有机场效应晶体管迁移率的研究进展

石巍巍, 李雯, 仪明东, 解令海, 韦玮, 黄维
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  • 栅绝缘层的表面性质对有机场效应晶体管(OFETs)的半导体薄膜的形貌、 晶粒生长的有序性和载流子的传输有着重大的影响.研究表明, 通过改进栅绝缘层的表面性质, 可以有效提高有机场效应晶体管的迁移率. 本文综述了OFETs绝缘层表面的粗糙度和表面能对OFETs迁移率的影响, 重点探讨了栅绝缘层表面修饰常用的方法, 即自组装单层(SAMs)修饰和聚合物修饰与迁移率改进之间的研究进展.最后, 展望了该研究方向未来可能的发展趋势.
    • 基金项目: 国家重点基础研究发展计划(批准号: 2009CB930600, 2012CB933301, 2012CB723402)、 国家自然科学基金(批准号: 61077070, 21144004, 60977023)、 教育部博士点基金(批准号: 20113223120003)、 江苏省自然科学基金(批准号: BK2011761, SBK201122680)、 江苏省高校自然科学基础研究面上项目(批准号: 11KJB510017)、 南京邮电大学人才科研启动基金(批准号: NY211022, NY210002, NY210030) 和江苏省高校优秀科技创新团队(批准号: TJ209035).
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  • [1]

    Veres J, Ogier S, Lloyd G, de Leeuw D 2004 Chem. Mater. 16 4543

    [2]

    Novak M, Ebel A, Meyer-Friedrichsen T, Jedaa A, Vieweg B F, Yang G A, Voitchovsky K, Stellacci F, Spiecker E, Hitsch A, Halik M 2011 Nano Lett. 11 156

    [3]

    Savage R C, Mativetsky J M, Orgiu E, Palma M, Gbabode G, Geerts Y H, Samori P 2011 J. Mater. Chem. 21 206

    [4]

    Yoon M H, Kim C, Facchetti A, Marks T J 2006 J. Am. Chem. Soc. 128 12851

    [5]

    Shekar B C, Lee J Y, Rhee S W 2004 Korean J. Chem. Eng. 21 267

    [6]

    Chung Y Y, Verploegen E, Vailionis A, Sun Y, Nishi Y, Murmann B, Bao Z A 2011 Nano Lett. 11 1161

    [7]

    Katsuta S, Miyagi D, Yamada H, Okujima T, Mori S, Nakayama K, Uno H 2011 Org. Lett. 13 1454

    [8]

    Kim S H, Hong K, Jang M, Jang J, Anthony J E, Yang H, Park C E 2010 Adv. Mater. 22 4809

    [9]

    Liao K C, Ismail A G, Kreplak L, Schwartz J, Hill I G 2010 Adv. Mater. 22 3081

    [10]

    Chou W Y, Kuo C W, Chang C W, Yeh B L, Chang M H 2010 J. Mater. Chem. 20 5474

    [11]

    Liu Y Y, Song C L, Zeng W J, Zhou K G, Shi Z F, Ma C B, Yang F, Zhang H L, Gong X 2010 J. Am. Chem. Soc. 132 16349

    [12]

    DiBenedetto S A, Facchetti A, Ratner M A, Marks T J 2009 Adv. Mater. 21 1407

    [13]

    Facchetti A, Yoon M H, Marks T J 2005 Adv. Mater. 17 1705

    [14]

    Horowitz G 2010 Org. Electron. 223 113

    [15]

    Dodabalapur A 2006 Mater. Today. 9 24

    [16]

    Chua L L, Zaumseil J, Chang J F, Ou E C W, Ho P K H, Sirringhaus H, Friend R H 2005 Nature 434 194

    [17]

    Di C A, Liu Y Q, Yu G, Zhu D B 2009 Accounts. Chem. Res. 42 1573

    [18]

    Shea P B, Kanicki J, Ono N 2005 J. Appl. Phys. 98 014503

    [19]

    Liu J, Hennek J W, Buchholz D B, Ha Y G, Xie S J, Dravid V P, Chang R P H, Facchetti A, Marks T J 2011 Adv. Mater. 23 992

    [20]

    Possanner S K, Zojer K, Pacher P, Zojer E, Schuerrer F 2009 Adv. Funct. Mater. 19 958

    [21]

    Vissenberg M C J MMatters M 1998 Phys. Rev. B 57 12964

    [22]

    Watkins N J, Yan L, Gao Y L 2002 Appl. Phys. Lett. 80 4384

    [23]

    Steudel S, De Vusser S, De Jonge S, Janssen D, Verlaak S, Genoe J, Heremans P 2004 Appl. Phys. Lett. 85 4400

    [24]

    Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mater. Interfaces 2 391

    [25]

    Jo P S, Sung J, Park C, Kim E, Ryu D Y, Pyo S, Kim H C, Hong J M 2008 Adv. Funct. Mater. 18 1202

    [26]

    Chua L L, Ho P K H, Sirringhaus H, Friend R H 2004 Adv. Mater. 16 1609

    [27]

    Chabinyc M L, Lujan R, Endicott F, Toney M F, McCulloch I, Heeney M 2007 Appl. Phys. Lett. 90 233508

    [28]

    Miskiewicz P, Kotarba S, Jung J, Marszalek T, Mas-Torrent M, Gomar-Nadal E, Amabilino D B, Rovira C, Veciana J, Maniukiewicz W, Ulanski J 2008 J. Appl. Phys. 104 054509

    [29]

    Yang H C, Kim S H, Yang L, Yang S Y, Park C E 2007 Adv. Mater. 19 2868

    [30]

    Yang S Y, Shin K, Park C E 2005 Adv. Funct. Mater. 15 1806

    [31]

    Virkar A, Mannsfeld S, Oh J H, Toney M F, Tan Y H, Liu G Y, Scott J C, Miller R, Bao Z 2009 Adv. Funct. Mater. 19 1962

    [32]

    Horowitz G 2003 Synthetic Met. 138 101

    [33]

    Horowitz G 1998 Adv. Mater. 10 365

    [34]

    Novak M, Schmaltz T, Faber H, Halik M 2011 Appl. Phys. Lett. 98 093302

    [35]

    Umeda T, Kumaki D, Tokito S 2009 J. Appl. Phys. 105 024516

    [36]

    Sun X N, Liu Y Q, Di C A, Wen Y G, Guo Y L, Zhang L, Zhao Y, Yu G 2011 Adv. Mater. 23 1009

    [37]

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    [38]

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    [39]

    Ismail A GHill I G 2011 Org. Electron. 12 1033

    [40]

    Islam M M, Pola S, Tao Y T 2011 ACS Appl. Mater. Interfaces 3 2136

    [41]

    Nie H-Y 2010 Anal. Chem. 82 3371

    [42]

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    [43]

    Singh K A, Nelson T L, Belot J A, Young T M, Dhumal N R, Kowalewski T, McCullough R D, Nachimuthu P, Thevuthasan S, Porter L M 2011 ACS Appl. Mater. Interfaces 3 2973

    [44]

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    [45]

    Fontaine P, Goguenheim D, Deresmes D, Vuillaume D, Garet M, Rondelez F 1993 Appl. Phys. Lett. 62 2256

    [46]

    Lin Y Y, Gundlach D J, Nelson S F, Jackson T N 1997 IEEE T. Electron. Dev. 44 1325

    [47]

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    [48]

    Mottaghi MHorowitz G 2006 Org. Electron. 7 528

    [49]

    Koo J B, Kim S H, Lee J H, Ku C H, Lim S C, Zyung T 2006 Synthetic Met. 156 99

    [50]

    Yang H C, Shin T J, Ling M M, Cho K, Ryu C Y, Bao Z N 2005 J. Am. Chem. Soc. 127 11542

    [51]

    Zan H WChou C W 2009 Jpn. J. Appl. Phys. 48 031501

    [52]

    Lee H S, Kim D H, Cho J H, Hwang M, Jang Y, Cho K 2008 J. Am. Chem. Soc. 130 10556

    [53]

    Shtein M, Mapel J, Benziger J B, Forrest S R 2002 Appl. Phys. Lett. 81 268

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    Kim D H, Lee H S, Yang H C, Yang L, Cho K 2008 Adv. Funct. Mater. 18 1363

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    Park Y M, Daniel J, Heeney M, Salleo A 2011 Adv. Mater. 23 974

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    Weitz R T, Amsharov K, Zschieschang U, Villas E B, Goswami D K, Burghard M, Dosch H, Jansen M, Kern K, Klauk H 2008 J. Am. Chem. Soc. 130 4637

    [62]

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    [63]

    Peng X Z, Horowitz G, Fichou D, Garnier F 1990 Appl. Phys. Lett. 57 2013

    [64]

    Martinelli N G, Savini M, Muccioli L, Olivier Y, Castet F, Zannoni C, Beljonne D, Cornil J 2009 Adv. Funct. Mater. 19 3254

    [65]

    Sun X N, Di C A, Liu Y Q 2010 J. Mater. Chem. 20 2599

    [66]

    Kim C, Facchetti A, Marks T J 2007 Adv. Mater. 19 2561

    [67]

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    Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574

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    Shin K, Yang C W, Yang S Y, Jeon H Y, Park C E 2006 Appl. Phys. Lett. 88 072109

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    Wang Y, Acton O, Ting G, Weidner T, Shamberge P J, Ma H, Ohuchi F S, Castner D G, Jen A K Y 2010 Org. Electron. 11 1066

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    Kim C, Facchetti A, Marks T J 2007 Science 318 76

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    Kim S H, Jang M, Yang H, Park C E 2010 J. Mater. Chem. 20 5612

    [73]

    Sun X, Zhang L, Di C-a, Wen Y, Guo Y, Zhao Y, Yu G, Liu Y 2011 Adv. Mater. 1

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    Veres J, Ogier S D, Leeming S W, Cupertino D C, Khaffaf S M 2003 Adv. Funct. Mater. 13 199

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    Lu Y X, Lee W H, Lee H S, Jang Y, Cho K 2009 Appl. Phys. Lett. 94 113303

    [76]

    Hwang D K, Kim C S, Choi J M, Lee K, Park J H, Kim E, Baik H K, Kim J H, Im S 2006 Adv. Mater. 18 2299

    [77]

    Gelinck G H, Huitema H E A, Van Veenendaal E, Cantatore E, Schrijnemakers L, Van der Putten J, Geuns T C T, Beenhakkers M, Giesbers J B, Huisman B H, Meijer E J, Benito E M, Touwslager F J, Marsman A W, Van Rens B J E, De Leeuw D M 2004 Nat. Mater. 3 106

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    McCarthy M A, Liu B, Donoghue E P, Kravchenko I, Kim D Y, So F, Rinzler A G 2011 Science 332 570

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    Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3051

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    Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516

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    Dutta S, Lewis S D, Dodabalapur A 2011 Appl. Phys. Lett. 98 213504

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    [84]

    Tobjörk Dösterbacka R 2011 Adv. Mater. 23 1961

    [85]

    Kim S JLee J S 2010 Nano Lett. 10 2884

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  • 收稿日期:  2012-03-05
  • 修回日期:  2012-06-14
  • 刊出日期:  2012-11-05

基于栅绝缘层表面修饰的有机场效应晶体管迁移率的研究进展

  • 1. 南京邮电大学信息材料与纳米技术研究院, 有机电子与信息显示国家重点实验室培育基地, 南京 210046;
  • 2. 南京邮电大学信息材料与光电工程学院, 南京 210046
    基金项目: 

    国家重点基础研究发展计划(批准号: 2009CB930600, 2012CB933301, 2012CB723402)、 国家自然科学基金(批准号: 61077070, 21144004, 60977023)、 教育部博士点基金(批准号: 20113223120003)、 江苏省自然科学基金(批准号: BK2011761, SBK201122680)、 江苏省高校自然科学基础研究面上项目(批准号: 11KJB510017)、 南京邮电大学人才科研启动基金(批准号: NY211022, NY210002, NY210030) 和江苏省高校优秀科技创新团队(批准号: TJ209035).

摘要: 栅绝缘层的表面性质对有机场效应晶体管(OFETs)的半导体薄膜的形貌、 晶粒生长的有序性和载流子的传输有着重大的影响.研究表明, 通过改进栅绝缘层的表面性质, 可以有效提高有机场效应晶体管的迁移率. 本文综述了OFETs绝缘层表面的粗糙度和表面能对OFETs迁移率的影响, 重点探讨了栅绝缘层表面修饰常用的方法, 即自组装单层(SAMs)修饰和聚合物修饰与迁移率改进之间的研究进展.最后, 展望了该研究方向未来可能的发展趋势.

English Abstract

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