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为了优化AlGaN/GaN HEMTs器件表面电场，提高击穿电压，本文首次提出了一种新型阶梯AlGaN/GaN HEMTs结构. 新结构利用AlGaN/GaN异质结形成的2DEG浓度随外延AlGaN层厚度降低而减小的规律，通过减薄靠近栅边缘外延的AlGaN层，使沟道2DEG浓度分区，形成栅边缘低浓度2DEG区，低的2DEG使阶梯AlGaN交界出现新的电场峰，新电场峰的出现有效降低了栅边缘的高峰电场，优化了AlGaN/GaN HEMTs器件的表面电场分布，使器件击穿电压从传统结构的446 V，提高到新结构的640 V. 为了获得与实际测试结果一致的击穿曲线，本文在GaN缓冲层中设定了一定浓度的受主型缺陷，通过仿真分析验证了国际上外延GaN缓冲层时掺入受主型离子的原因，并通过仿真分析获得了与实际测试结果一致的击穿曲线.
[1] Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri R W, Hussain M A, Dipankar Saha 2012 IEEE Electron Device Lett. 33 1690
[2] Hidetoshi Ishida, Daisuke Shibata, Manabu Yanagihara, Yasuhiro Uemoto, Hisayoshi Matsuo, Tetsuzo Ueda, Tsuyaoshi Tanaka, Daisuke Ueda 2008 IEEE Transactions on Electron Devices 29 1087
[3] Tongde Huang, Xueliang Zhu, Ka Ming Wong, Kei May Lau 2012 IEEE Electron Device Lett. 33 212
[4] Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl Phy 130 093529-1
[5] Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087
[6] Chunhua Zhou, Qimeng Jiang, Sen Huang, Chen K J 2012 IEEE Electron Device Lett. 33 1132
[7] Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl. Phys. 130 093529
[8] Lee J H, Yoo J K, Kang H S, Lee J H 2012 IEEE Electron Device Lett. 33 1171
[9] Lee H S, Daniel Piedra, Min Sun, Xiang Gao, Shiping Guo, Tomas Palacios 2012 IEEE Electron Device Lett. 33 982
[10] Duan B X, Yang Y T 2012 Sci. China Inf. Sci. 55 473
[11] Duan B X, Yang Y T 2012 Micro & Nano Letter 7 9
[12] Subramaniam Arulkumaran, Takashi Egawa, Lawrence Selvaraj, Hiroyasu Ishikawa 2006 Japanese Jouranl of Applied Physics 45 L220
[13] Benbakhti B, Rousseau M, De Jaeger J C 2007 Microelectronics Jouranl 38 7
[14] Jha S, Jelenkovic E V, Pejovic M M, Ristic G S, Pejovic M, Tong K Y, Surya C, Bello I, Zhang W J 2009 Microelectronic Engineering 86 37
[15] Arulkumaran S, Liu Z H, Ng G I, Cheong W C, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan C L 2007 Thin Solid Films. 515 4517
[16] Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344
[17] Duan B X, Zhang B, Li Z J 2006 IEEE Electron Device Lett. 27 377
[18] Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329
[19] Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305
[20] Duan B X, Yang Y T 2011 IEEE TRANSACTIONS ON Electron Devices 58 2057
[21] Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685
[22] Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302
[23] Duan B X, Yang Y T, Kevin J. Chen 2012 Acta Phys. Sin. 61 227302
[24] Udrea F, Popescu A, Milne W I 1998 Electronics Letters 34 808
[25] Smorchkova I P, Elsass C R, Ibbetson J P, Heying B, Fini P, DenBaars S P, Speck J S, Mishra U K 1999 Journal of Applied Physics 86 4520
[26] Yifei Zhang, Smorchkova I P, Elsass C R, Stacia Keller, Ibbetson J P, Jasprit Singh 2000 Appl. Phys. Lett. 87 7981
[27] Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 77 250
[28] Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439
[29] Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan-Saguy C 2001 Appl. Phys. Lett. 78 757
[30] Webb J B, Tang H, Rolfe S, Bardwell J A 1999 Appl. Phys. Lett. 75 953
[31] Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth. 251 481
[32] Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra U K, Speck J S 2004 J. Vac. Sci. Technol. B 22 114
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[1] Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri R W, Hussain M A, Dipankar Saha 2012 IEEE Electron Device Lett. 33 1690
[2] Hidetoshi Ishida, Daisuke Shibata, Manabu Yanagihara, Yasuhiro Uemoto, Hisayoshi Matsuo, Tetsuzo Ueda, Tsuyaoshi Tanaka, Daisuke Ueda 2008 IEEE Transactions on Electron Devices 29 1087
[3] Tongde Huang, Xueliang Zhu, Ka Ming Wong, Kei May Lau 2012 IEEE Electron Device Lett. 33 212
[4] Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl Phy 130 093529-1
[5] Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087
[6] Chunhua Zhou, Qimeng Jiang, Sen Huang, Chen K J 2012 IEEE Electron Device Lett. 33 1132
[7] Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl. Phys. 130 093529
[8] Lee J H, Yoo J K, Kang H S, Lee J H 2012 IEEE Electron Device Lett. 33 1171
[9] Lee H S, Daniel Piedra, Min Sun, Xiang Gao, Shiping Guo, Tomas Palacios 2012 IEEE Electron Device Lett. 33 982
[10] Duan B X, Yang Y T 2012 Sci. China Inf. Sci. 55 473
[11] Duan B X, Yang Y T 2012 Micro & Nano Letter 7 9
[12] Subramaniam Arulkumaran, Takashi Egawa, Lawrence Selvaraj, Hiroyasu Ishikawa 2006 Japanese Jouranl of Applied Physics 45 L220
[13] Benbakhti B, Rousseau M, De Jaeger J C 2007 Microelectronics Jouranl 38 7
[14] Jha S, Jelenkovic E V, Pejovic M M, Ristic G S, Pejovic M, Tong K Y, Surya C, Bello I, Zhang W J 2009 Microelectronic Engineering 86 37
[15] Arulkumaran S, Liu Z H, Ng G I, Cheong W C, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan C L 2007 Thin Solid Films. 515 4517
[16] Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344
[17] Duan B X, Zhang B, Li Z J 2006 IEEE Electron Device Lett. 27 377
[18] Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329
[19] Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305
[20] Duan B X, Yang Y T 2011 IEEE TRANSACTIONS ON Electron Devices 58 2057
[21] Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685
[22] Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302
[23] Duan B X, Yang Y T, Kevin J. Chen 2012 Acta Phys. Sin. 61 227302
[24] Udrea F, Popescu A, Milne W I 1998 Electronics Letters 34 808
[25] Smorchkova I P, Elsass C R, Ibbetson J P, Heying B, Fini P, DenBaars S P, Speck J S, Mishra U K 1999 Journal of Applied Physics 86 4520
[26] Yifei Zhang, Smorchkova I P, Elsass C R, Stacia Keller, Ibbetson J P, Jasprit Singh 2000 Appl. Phys. Lett. 87 7981
[27] Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 77 250
[28] Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439
[29] Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan-Saguy C 2001 Appl. Phys. Lett. 78 757
[30] Webb J B, Tang H, Rolfe S, Bardwell J A 1999 Appl. Phys. Lett. 75 953
[31] Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth. 251 481
[32] Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra U K, Speck J S 2004 J. Vac. Sci. Technol. B 22 114
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