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阶梯AlGaN外延新型Al0.25Ga0.75N/GaN HEMTs击穿特性分析

段宝兴 杨银堂

阶梯AlGaN外延新型Al0.25Ga0.75N/GaN HEMTs击穿特性分析

段宝兴, 杨银堂
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  • 为了优化AlGaN/GaN HEMTs器件表面电场,提高击穿电压,本文首次提出了一种新型阶梯AlGaN/GaN HEMTs结构. 新结构利用AlGaN/GaN异质结形成的2DEG浓度随外延AlGaN层厚度降低而减小的规律,通过减薄靠近栅边缘外延的AlGaN层,使沟道2DEG浓度分区,形成栅边缘低浓度2DEG区,低的2DEG使阶梯AlGaN交界出现新的电场峰,新电场峰的出现有效降低了栅边缘的高峰电场,优化了AlGaN/GaN HEMTs器件的表面电场分布,使器件击穿电压从传统结构的446 V,提高到新结构的640 V. 为了获得与实际测试结果一致的击穿曲线,本文在GaN缓冲层中设定了一定浓度的受主型缺陷,通过仿真分析验证了国际上外延GaN缓冲层时掺入受主型离子的原因,并通过仿真分析获得了与实际测试结果一致的击穿曲线.
    • 基金项目: 国家重点基础研究发展计划(批准号:2014CB339900)、国家自然科学基金重点项目(批准号:61234006)和国家自然科学基金青年科学基金(批准号:61106076)资助的课题.
    [1]

    Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri R W, Hussain M A, Dipankar Saha 2012 IEEE Electron Device Lett. 33 1690

    [2]

    Hidetoshi Ishida, Daisuke Shibata, Manabu Yanagihara, Yasuhiro Uemoto, Hisayoshi Matsuo, Tetsuzo Ueda, Tsuyaoshi Tanaka, Daisuke Ueda 2008 IEEE Transactions on Electron Devices 29 1087

    [3]

    Tongde Huang, Xueliang Zhu, Ka Ming Wong, Kei May Lau 2012 IEEE Electron Device Lett. 33 212

    [4]

    Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl Phy 130 093529-1

    [5]

    Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087

    [6]

    Chunhua Zhou, Qimeng Jiang, Sen Huang, Chen K J 2012 IEEE Electron Device Lett. 33 1132

    [7]

    Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl. Phys. 130 093529

    [8]

    Lee J H, Yoo J K, Kang H S, Lee J H 2012 IEEE Electron Device Lett. 33 1171

    [9]

    Lee H S, Daniel Piedra, Min Sun, Xiang Gao, Shiping Guo, Tomas Palacios 2012 IEEE Electron Device Lett. 33 982

    [10]

    Duan B X, Yang Y T 2012 Sci. China Inf. Sci. 55 473

    [11]

    Duan B X, Yang Y T 2012 Micro & Nano Letter 7 9

    [12]

    Subramaniam Arulkumaran, Takashi Egawa, Lawrence Selvaraj, Hiroyasu Ishikawa 2006 Japanese Jouranl of Applied Physics 45 L220

    [13]

    Benbakhti B, Rousseau M, De Jaeger J C 2007 Microelectronics Jouranl 38 7

    [14]

    Jha S, Jelenkovic E V, Pejovic M M, Ristic G S, Pejovic M, Tong K Y, Surya C, Bello I, Zhang W J 2009 Microelectronic Engineering 86 37

    [15]

    Arulkumaran S, Liu Z H, Ng G I, Cheong W C, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan C L 2007 Thin Solid Films. 515 4517

    [16]

    Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344

    [17]

    Duan B X, Zhang B, Li Z J 2006 IEEE Electron Device Lett. 27 377

    [18]

    Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329

    [19]

    Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305

    [20]

    Duan B X, Yang Y T 2011 IEEE TRANSACTIONS ON Electron Devices 58 2057

    [21]

    Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685

    [22]

    Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302

    [23]

    Duan B X, Yang Y T, Kevin J. Chen 2012 Acta Phys. Sin. 61 227302

    [24]

    Udrea F, Popescu A, Milne W I 1998 Electronics Letters 34 808

    [25]

    Smorchkova I P, Elsass C R, Ibbetson J P, Heying B, Fini P, DenBaars S P, Speck J S, Mishra U K 1999 Journal of Applied Physics 86 4520

    [26]

    Yifei Zhang, Smorchkova I P, Elsass C R, Stacia Keller, Ibbetson J P, Jasprit Singh 2000 Appl. Phys. Lett. 87 7981

    [27]

    Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 77 250

    [28]

    Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439

    [29]

    Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan-Saguy C 2001 Appl. Phys. Lett. 78 757

    [30]

    Webb J B, Tang H, Rolfe S, Bardwell J A 1999 Appl. Phys. Lett. 75 953

    [31]

    Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth. 251 481

    [32]

    Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra U K, Speck J S 2004 J. Vac. Sci. Technol. B 22 114

  • [1]

    Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri R W, Hussain M A, Dipankar Saha 2012 IEEE Electron Device Lett. 33 1690

    [2]

    Hidetoshi Ishida, Daisuke Shibata, Manabu Yanagihara, Yasuhiro Uemoto, Hisayoshi Matsuo, Tetsuzo Ueda, Tsuyaoshi Tanaka, Daisuke Ueda 2008 IEEE Transactions on Electron Devices 29 1087

    [3]

    Tongde Huang, Xueliang Zhu, Ka Ming Wong, Kei May Lau 2012 IEEE Electron Device Lett. 33 212

    [4]

    Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl Phy 130 093529-1

    [5]

    Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087

    [6]

    Chunhua Zhou, Qimeng Jiang, Sen Huang, Chen K J 2012 IEEE Electron Device Lett. 33 1132

    [7]

    Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl. Phys. 130 093529

    [8]

    Lee J H, Yoo J K, Kang H S, Lee J H 2012 IEEE Electron Device Lett. 33 1171

    [9]

    Lee H S, Daniel Piedra, Min Sun, Xiang Gao, Shiping Guo, Tomas Palacios 2012 IEEE Electron Device Lett. 33 982

    [10]

    Duan B X, Yang Y T 2012 Sci. China Inf. Sci. 55 473

    [11]

    Duan B X, Yang Y T 2012 Micro & Nano Letter 7 9

    [12]

    Subramaniam Arulkumaran, Takashi Egawa, Lawrence Selvaraj, Hiroyasu Ishikawa 2006 Japanese Jouranl of Applied Physics 45 L220

    [13]

    Benbakhti B, Rousseau M, De Jaeger J C 2007 Microelectronics Jouranl 38 7

    [14]

    Jha S, Jelenkovic E V, Pejovic M M, Ristic G S, Pejovic M, Tong K Y, Surya C, Bello I, Zhang W J 2009 Microelectronic Engineering 86 37

    [15]

    Arulkumaran S, Liu Z H, Ng G I, Cheong W C, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan C L 2007 Thin Solid Films. 515 4517

    [16]

    Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344

    [17]

    Duan B X, Zhang B, Li Z J 2006 IEEE Electron Device Lett. 27 377

    [18]

    Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329

    [19]

    Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305

    [20]

    Duan B X, Yang Y T 2011 IEEE TRANSACTIONS ON Electron Devices 58 2057

    [21]

    Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685

    [22]

    Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302

    [23]

    Duan B X, Yang Y T, Kevin J. Chen 2012 Acta Phys. Sin. 61 227302

    [24]

    Udrea F, Popescu A, Milne W I 1998 Electronics Letters 34 808

    [25]

    Smorchkova I P, Elsass C R, Ibbetson J P, Heying B, Fini P, DenBaars S P, Speck J S, Mishra U K 1999 Journal of Applied Physics 86 4520

    [26]

    Yifei Zhang, Smorchkova I P, Elsass C R, Stacia Keller, Ibbetson J P, Jasprit Singh 2000 Appl. Phys. Lett. 87 7981

    [27]

    Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 77 250

    [28]

    Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439

    [29]

    Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan-Saguy C 2001 Appl. Phys. Lett. 78 757

    [30]

    Webb J B, Tang H, Rolfe S, Bardwell J A 1999 Appl. Phys. Lett. 75 953

    [31]

    Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth. 251 481

    [32]

    Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra U K, Speck J S 2004 J. Vac. Sci. Technol. B 22 114

  • 引用本文:
    Citation:
计量
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  • 被引次数: 0
出版历程
  • 收稿日期:  2013-11-03
  • 修回日期:  2013-11-28
  • 刊出日期:  2014-03-05

阶梯AlGaN外延新型Al0.25Ga0.75N/GaN HEMTs击穿特性分析

  • 1. 西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室, 西安 710071
    基金项目: 

    国家重点基础研究发展计划(批准号:2014CB339900)、国家自然科学基金重点项目(批准号:61234006)和国家自然科学基金青年科学基金(批准号:61106076)资助的课题.

摘要: 为了优化AlGaN/GaN HEMTs器件表面电场,提高击穿电压,本文首次提出了一种新型阶梯AlGaN/GaN HEMTs结构. 新结构利用AlGaN/GaN异质结形成的2DEG浓度随外延AlGaN层厚度降低而减小的规律,通过减薄靠近栅边缘外延的AlGaN层,使沟道2DEG浓度分区,形成栅边缘低浓度2DEG区,低的2DEG使阶梯AlGaN交界出现新的电场峰,新电场峰的出现有效降低了栅边缘的高峰电场,优化了AlGaN/GaN HEMTs器件的表面电场分布,使器件击穿电压从传统结构的446 V,提高到新结构的640 V. 为了获得与实际测试结果一致的击穿曲线,本文在GaN缓冲层中设定了一定浓度的受主型缺陷,通过仿真分析验证了国际上外延GaN缓冲层时掺入受主型离子的原因,并通过仿真分析获得了与实际测试结果一致的击穿曲线.

English Abstract

参考文献 (32)

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