等离子体增强化学气相沉积工艺制备SiON膜及对硅的钝化

何素明; 戴珊珊; 罗向东; 张波; 王金斌

doi:10.7498/aps.63.128102

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摘要

研究了等离子体增强化学气相沉积工艺条件对氮氧化硅膜的生长厚度及折射率的影响以及氮氧化硅/氮化硅叠层膜对p型硅片的钝化效果. 实验结果表明，NH3的流量和N2O/SiH4 流量比对氮氧化硅膜的影响较大，薄膜折射率能从1.48变化到2.1，厚度从30–60 nm不等. 腔内压力和射频功率主要影响膜厚，压力越大，功率越大，沉积速率加快，生成的膜越厚. 温度对膜厚和折射率的影响可以忽略. 钝化效果显示，在有无NH3下，N2O/SiH4流量比分别为20和30时，退火后氮氧化硅/氮化硅叠层膜对p 型硅的钝化效果最好，其潜在电压和少子寿命分别为652 mV，56.7 μs 和649 mV，50.8 μs，均优于参照组氮化硅膜样品的钝化效果.

关键词:

作者及机构信息

1.
湘潭大学材料与光电物理学院, 低维材料与应用技术教育部重点实验室, 湘潭 411105;

2.
中国科学院上海技术物理研究所, 红外物理国家重点实验室, 上海 200083;

3.
南通大学, 江苏省专用集成电路设计重点实验室, 南通 226019

基金项目: 国家重点基础研究发展计划（批准号：2011CB925604，2011CB922004）和中国博士后科学基金（批准号：20110490075）资助的课题.

参考文献

[1]	Glunz S W 2007 Adv. OptoElectron. 2007 97370
[2]	Riegel S, Gloger S, Raabe B, Hahn G 2009 24th EUPVSEC Hamburg, Germany, September 21-25, 2009 p1596
[3]	Chen F X, Wang L S, Xu W Y 2013 Chin. Phys. B 22 045202
[4]	Jia Z N, Zhang X D, Liu Y, Wang Y F, Fan J, Liu C C, Zhao Y 2014 Chin. Phys. B 23 046106
[5]	Zhao J H, Wang A H, Green M A 1999 Prog. Photovolt. 7 471
[6]	Aberle A G 2000 Prog. Photovolt. 8 473
[7]	Gruenbaum P E, Gan J Y, King R, Swanson R M 1990 PVSC,Conference Record of the 21st IEEE Kissimmee, Florida, May 21-25, 1990 p317
[8]	Schultz O, Glunz S W, Goldschmidt J C, Lautenschlager H, Leimenstoll A, Schneiderlöchner E, Willeke G P 2004 19th EUPVSEC Paris, France, June 7-11, 2004 p604
[9]	Meemongkolkiat V, Kim D S, Rohatgi A 2007 22nd EUPVSEC Milan, Italy, September 3-7, 2007 p1034
[10]	Chang W L, Sun W C, Lin C H, Lan C W 2008 23rd EUPVSEC Valencia, Spain, September 1-5, 2008 p1349
[11]	Li T T, Cuevas A 2009 Phys. Status Solidi (RRL) 3 160
[12]	Hofmann M, Janz S, Schmidt C, Kambor S, Suwito D, Kohn N, Rentsch J, Preu R, Glunz S W 2009 Sol. Energy Mater. Sol. Cells. 93 1074
[13]	Moschner J D, Henze J, Schmidt J, Hezel R 2004 Prog. Photovolt. 12 21
[14]	Lenkeit B, Lauinger T, Aberle A G, Hezel R 1998 2nd WCPVSEC Vienna, Austria, July 6-10, 1998 p1434
[15]	Dupuis J, Fourmond E, Nichiporuk O, Gibaja F, Lemiti M 2008 23rd EUPVSEC Valencia, Spain, September 1-5, 2008 p1633
[16]	Dingemans G, Kessels E 2012 J. Vac. Sci. Technol. A 30 040802
[17]	He Y, Dou Y N, Ma X G, Chen S B, Chu J H 2012 Acta Phys. Sin. 61 248102 (in Chinese) [何悦, 窦亚楠, 马晓光, 陈绍斌, 褚君浩 2012 物理学报 61 248102]
[18]	Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A 2010 Adv. Mater. 22 3564
[19]	Maeda M, Itsumi M 1998 J. Appl. Phys. 84 5243
[20]	Dupuis J, Fourmond E, Lelièvre J F, Ballutaud D, Lemiti M 2008 Thin Solid Films 516 6954
[21]	Gong C F, Xi Z Q, Wang X Q, Yang D R, Que D L 2006 Acta Energ. Sol. Sin. 27 300 (in Chinese) [龚灿锋, 席珍强, 王晓泉, 杨德仁, 阙端麟 2006 太阳能学报 27 300]

施引文献

[1]	Glunz S W 2007 Adv. OptoElectron. 2007 97370
[2]	Riegel S, Gloger S, Raabe B, Hahn G 2009 24th EUPVSEC Hamburg, Germany, September 21-25, 2009 p1596
[3]	Chen F X, Wang L S, Xu W Y 2013 Chin. Phys. B 22 045202
[4]	Jia Z N, Zhang X D, Liu Y, Wang Y F, Fan J, Liu C C, Zhao Y 2014 Chin. Phys. B 23 046106
[5]	Zhao J H, Wang A H, Green M A 1999 Prog. Photovolt. 7 471
[6]	Aberle A G 2000 Prog. Photovolt. 8 473
[7]	Gruenbaum P E, Gan J Y, King R, Swanson R M 1990 PVSC,Conference Record of the 21st IEEE Kissimmee, Florida, May 21-25, 1990 p317
[8]	Schultz O, Glunz S W, Goldschmidt J C, Lautenschlager H, Leimenstoll A, Schneiderlöchner E, Willeke G P 2004 19th EUPVSEC Paris, France, June 7-11, 2004 p604
[9]	Meemongkolkiat V, Kim D S, Rohatgi A 2007 22nd EUPVSEC Milan, Italy, September 3-7, 2007 p1034
[10]	Chang W L, Sun W C, Lin C H, Lan C W 2008 23rd EUPVSEC Valencia, Spain, September 1-5, 2008 p1349
[11]	Li T T, Cuevas A 2009 Phys. Status Solidi (RRL) 3 160
[12]	Hofmann M, Janz S, Schmidt C, Kambor S, Suwito D, Kohn N, Rentsch J, Preu R, Glunz S W 2009 Sol. Energy Mater. Sol. Cells. 93 1074
[13]	Moschner J D, Henze J, Schmidt J, Hezel R 2004 Prog. Photovolt. 12 21
[14]	Lenkeit B, Lauinger T, Aberle A G, Hezel R 1998 2nd WCPVSEC Vienna, Austria, July 6-10, 1998 p1434
[15]	Dupuis J, Fourmond E, Nichiporuk O, Gibaja F, Lemiti M 2008 23rd EUPVSEC Valencia, Spain, September 1-5, 2008 p1633
[16]	Dingemans G, Kessels E 2012 J. Vac. Sci. Technol. A 30 040802
[17]	He Y, Dou Y N, Ma X G, Chen S B, Chu J H 2012 Acta Phys. Sin. 61 248102 (in Chinese) [何悦, 窦亚楠, 马晓光, 陈绍斌, 褚君浩 2012 物理学报 61 248102]
[18]	Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A 2010 Adv. Mater. 22 3564
[19]	Maeda M, Itsumi M 1998 J. Appl. Phys. 84 5243
[20]	Dupuis J, Fourmond E, Lelièvre J F, Ballutaud D, Lemiti M 2008 Thin Solid Films 516 6954
[21]	Gong C F, Xi Z Q, Wang X Q, Yang D R, Que D L 2006 Acta Energ. Sol. Sin. 27 300 (in Chinese) [龚灿锋, 席珍强, 王晓泉, 杨德仁, 阙端麟 2006 太阳能学报 27 300]

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等离子体增强化学气相沉积工艺制备SiON膜及对硅的钝化

1. 湘潭大学材料与光电物理学院, 低维材料与应用技术教育部重点实验室, 湘潭 411105;

2. 中国科学院上海技术物理研究所, 红外物理国家重点实验室, 上海 200083;

3. 南通大学, 江苏省专用集成电路设计重点实验室, 南通 226019

基金项目:

国家重点基础研究发展计划（批准号：2011CB925604，2011CB922004）和中国博士后科学基金（批准号：20110490075）资助的课题.

收稿日期: 2013-12-29

修回日期: 2014-03-05

刊出日期: 2014-06-05

摘要: 研究了等离子体增强化学气相沉积工艺条件对氮氧化硅膜的生长厚度及折射率的影响以及氮氧化硅/氮化硅叠层膜对p型硅片的钝化效果. 实验结果表明，NH3的流量和N2O/SiH4 流量比对氮氧化硅膜的影响较大，薄膜折射率能从1.48变化到2.1，厚度从30–60 nm不等. 腔内压力和射频功率主要影响膜厚，压力越大，功率越大，沉积速率加快，生成的膜越厚. 温度对膜厚和折射率的影响可以忽略. 钝化效果显示，在有无NH3下，N2O/SiH4流量比分别为20和30时，退火后氮氧化硅/氮化硅叠层膜对p 型硅的钝化效果最好，其潜在电压和少子寿命分别为652 mV，56.7 μs 和649 mV，50.8 μs，均优于参照组氮化硅膜样品的钝化效果.

关键词:

Preparation of SiON film by plasma enhanced chemical vapor deposition and passivation on Si

1.
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411105, China;

2.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

3.
Jiangsu Key Laboratory of Asic Design, Nantong University, Nantong 226019, China

Fund Project:

Project supported by the National Basic Research Program of China (Grant Nos. 2011CB925604, 2011CB922004) and the China Postdoctoral Science Foundation (Grant No. 20110490075).

Received Date: 29 December 2013

Accepted Date: 05 March 2014

Published Online: 05 June 2014

Abstract: The influences of technological condition on thickness and refractive index of the SiON films preprared by plasma enhanced chemical vapor deposition and the influence of SiON/SiNx stacked film on passivation performance on P-type silicon wafer are investigatied. The results show that the refractive index of SiON film varies from 1.48 to 2.1 and thickness varies from 30-60 nm by changing the gas flow of NH3 and the gas flow ratio of N2O/SiH4. The pressure and RF power mainly affect the thickness of the film. The greater the pressure, the higher the RF power, the faster the deposition rate is and the thicker the film is. The influences of temperature on the film thickness and refractive index can be ignored. The passivation shows that the passivation performance of P-type silicon film after annealing SiON/SiNx stacked films with a gas flow ratio of N2O/SiH4 20 and 30 in the absence and the presence of NH3, is best, which the implied voltages and the lifetimes of minority carriers are 652 mV, 56.7 μs and 649 mV, 50.8 μs, respectively. The passivation effect of SiON/SiNx stacked film is superior to that of the reference SiNx film.

Keywords:

SiON /
plasma enhanced chemical vapor deposition /
rear surface passivation /
crystalline silicon soler cell

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