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物理学报. 1997, 46(3): 587-595.
doi: 10.7498/aps.46.587.
Ge/ZnSe(100)异质结能带偏移的同步辐射光电子能谱研究
- 收稿日期: 1995-11-01
- 刊出日期: 1997-03-20
摘要: 利用同步辐射光电子能谱研究了Ge/ZnSe（100）极性界面的能带连接问题．表面灵敏的芯能级谱显示出Ge原子与Se原子在界面处存在较弱的化学反应．利用芯能级技术，测量了该异质结的价带偏移，为1.76±0.1eV．用界面键极性模型对ZnSe（100）极性表面对价带偏移的影响进行了讨论，理论与实验符合较好
English Abstract
VALENCE BAND OFFSETS OF Ge/ZnSe(100) STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION
- Received Date:
01 November 1995
- Published Online:
20 March 1997
Abstract: The band lineup of a Ge/ZnSe(100) polar interface has been studied by synchrotron radiation photoemission spectroscopy.Surface sensitive core level spectra indicate that Ge atoms in the overlayer can react with Se atoms at the interface.The valence band offset of this heterojunction has been obtained using core level techniques,and found to be 1.76±0.1eV.The effect of polar surface ZnSe(100) on the valence band offset has been discussed in light of the interface bond polarity model.The experimental results agree well with the theory.
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