搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

掺杂对称性对(110)晶向生长GaAs/AlGaAs量子阱中电子自旋弛豫动力学的影响}

滕利华 牟丽君

引用本文:
Citation:

掺杂对称性对(110)晶向生长GaAs/AlGaAs量子阱中电子自旋弛豫动力学的影响}

滕利华, 牟丽君

Effect of doping symmetry on electron spin relaxation dynamics in (110) GaAs/AlGaAs quantum wells

Teng Li-Hua, Mu Li-Jun
PDF
导出引用
  • 采用时间分辨圆偏振光抽运-探测光谱,测量了(110)晶向生长的近似对称和完全非对称掺杂GaAs/AlGaAs量子阱中的电子自旋弛豫,发现两种量子阱材料中的电子自旋弛豫时间随载流子浓度的增大均呈现出先增大后减小的趋势,且近似对称掺杂GaAs量子阱中的电子自旋弛豫时间明显大于完全非对称掺杂量子阱.分析表明,在(110)晶向生长的GaAs量子阱中并非只有通常认为的Bir-Aronov-Pikus(BAP)机理起作用,在低载流子浓度区域,两种量子阱中Dyakonov-Perel(DP)机理起主导作用,高载流子浓度区域BAP机理和DP机理都起作用,完全非对称掺杂的量子阱中DP机理强于近似对称掺杂量子阱.
    Considerable interest has been aroused in the study of the spin dynamics in semiconductors due to its potential applications in spintronics and quantum computation. In this paper, time-resolved circularly polarized pump-probe spectroscopy is used to study the carrier density dependences on the electron spin relaxation in approximately symmetrical and completely asymmetrical doping (110) GaAs/AlGaAs quantum wells. With the increase of the carrier density, the spin relaxation time first increases and then decrease obviously in both of the quantum wells, and the measured spin relaxation time of the approximately symmetrical doping quantum wells is always longer than that of the asymmetrical doping one. By analysis, we find that the spin relaxation is not dominated only by the Bir-Aronov-Pikus (BAP) mechanism in (110) GaAs quantum wells, that though the Dresselhaus spin-orbit coupling does not lead to any spin relaxation, the asymmetry of the doping position contributes to the asymmetry of potential energy structure, thus the built-in electric field which can induce the Rashba spin-orbit coupling to appear, and that the effective magnetic field induced by the Rashba spin-orbit coupling normal to the growth direction can lead to spin relaxation along the growth direction. Therefore, the Dyakonov-Perel (DP) mechanism plays an important role in asymmetrical doping (110) GaAs/AlGaAs quantum wells. In the approximately symmetrical and completely asymmetrical doping (110) GaAs/AlGaAs quantum wells, the DP mechanism dominates the spin relaxation at low carrier density, thus the spin relaxation time increases with carrier density increasing due to the strengthening of the electron-electron scattering and the decreasing of the momentum relaxation time. However, at high carrier density, BAP mechanism plays an important role, thus the spin relaxation time decreases obviously with carrier density increrasing, but the decay rates in both of the quantum wells are slower than that in the casethat only BAP mechanism dominates, because both the DP and BAP mechanism play an important role. The strength of the Rashba spin-orbit coupling depends on the symmetry of the quantum well. The DP mechanism in a completely asymmetrical doping quantum well is stronger than that in an approximately symmetrical doping quantum wells, thus the decay rate in a completely asymmetrical doping quantum wells is always slower than that in an approximately symmetrical doping quantum wells, and the spin relaxation time in a completely asymmetrical doping quantum wells is shorter than that in an approximately symmetrical doping quantum wells.
      通信作者: 滕利华, tenglihua80@163.com
    • 基金项目: 国家自然科学基金(批准号:11504194,11274189)和青岛市应用基础研究计划项目青年专项(批准号:14-2-4-101-jch)资助的课题.
      Corresponding author: Teng Li-Hua, tenglihua80@163.com
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos.11504194,11274189) and the Scientific Development Project of Qingdao,China (Grant No.14-2-4-101-jch).
    [1]

    Zutic I, Fabian J, Das Sarma S 2004Rev. Mod. Phys. 76 323

    [2]

    Loss D, DiVincenzo D P 1998Phys. Rev. A 57 120

    [3]

    Zhang T T, Barate P, Nguyen C T, Balocchi A, Amand T, Renucci P, Carrere H, Urbaszek B, Marie X 2013Phys. Rev. B 87 041201

    [4]

    Krishnamurthy S, van Schilfgaarde M, Newman N 2003Appl. Phys. Lett. 83 1761

    [5]

    Teng L H, Zhang P, Lai T S, Wu M W 2008Europhys. Lett. 84 27006

    [6]

    Lai T S, Teng L H, Jiao Z X, Xu H H, Lei L, Wen J H, Lin W Z 2007Appl. Phys. Lett. 91 062110

    [7]

    Lai T S, Liu X D, Xu H H, Jiao Z X, Wen J H, Lin W Z 2006Appl. Phys. Lett. 88 192106

    [8]

    Chen X X, Teng L H, Liu X D, Huang Q W, Wen J H, Lin W Z, Lai T S 2008Acta Phys. Sin. 57 3853(in Chinese)[陈小雪, 滕利华, 刘晓东, 黄绮雯, 文锦辉, 林位株, 赖天树2008物理学报57 3853]

    [9]

    Wu Y, Jiao Z X, Lei L, Wen J H, Lai T S, Lin W Z 2006Acta Phys. Sin. 55 2961(in Chinese)[吴羽, 焦中兴, 雷亮, 文锦辉, 赖天树, 林位株2006物理学报55 2961]

    [10]

    Wu M W, Jiang J H, Weng M Q 2010Phys. Reports 493 61

    [11]

    Xia J B, Ge W K, Chang K 2008Semiconductor Spintronics (Beijing:Science Press) p216(in Chinese)[夏建白, 葛惟昆, 常凯2008半导体自旋电子学(北京:科学出版社)第216页]

    [12]

    Ohno Y, Terauchi R, Adachi T, Matsukura F, Ohno H 1999Phys. Rev. Lett. 83 4196

    [13]

    Eldridge P S, Lagoudakis P G, Henini M, Harley R T 2010Phys. Rev. B 81 033302

    [14]

    Vlkl R, Griesbeck M, Tarasenko S A, Schuh D, Wegscheider W, Schller C, Korn T 2011Phys. Rev. B 83 241306

    [15]

    Han L F, Zhu Y G, Zhang X H, Tian P H, Ni H Q, Niu Z C 2011Nanoscale Res. Lett. 6 84

    [16]

    Xu H H, Jiao Z X, Liu X D, Lei L, Wen J H, Wang H, Lin W Z, Lai T S 2006Acta Phys. Sin. 55 2618(in Chinese)[徐海红, 焦中兴, 刘晓东, 雷亮, 文锦辉, 王惠, 林位株, 赖天树2006物理学报55 2618]

    [17]

    Teng L H, Mu L J, Wang X 2014Physica B 436 177

    [18]

    Lai T S, Liu L N, Shou Q, Lei L, Lin W Z 2004Appl. Phys. Lett. 85 4040

    [19]

    Teng L H, Chen K, Wen J H, Lin W Z, Lai T S 2009J. Phys. D:Appl. Phys. 42 135111

    [20]

    Vlkl R, Schwemmer M, Griesbeck M, Tarasenko S A, Schuh D, Wegscheider W, Schller C, Korn T 2014Phys. Rev. B 89 075424

  • [1]

    Zutic I, Fabian J, Das Sarma S 2004Rev. Mod. Phys. 76 323

    [2]

    Loss D, DiVincenzo D P 1998Phys. Rev. A 57 120

    [3]

    Zhang T T, Barate P, Nguyen C T, Balocchi A, Amand T, Renucci P, Carrere H, Urbaszek B, Marie X 2013Phys. Rev. B 87 041201

    [4]

    Krishnamurthy S, van Schilfgaarde M, Newman N 2003Appl. Phys. Lett. 83 1761

    [5]

    Teng L H, Zhang P, Lai T S, Wu M W 2008Europhys. Lett. 84 27006

    [6]

    Lai T S, Teng L H, Jiao Z X, Xu H H, Lei L, Wen J H, Lin W Z 2007Appl. Phys. Lett. 91 062110

    [7]

    Lai T S, Liu X D, Xu H H, Jiao Z X, Wen J H, Lin W Z 2006Appl. Phys. Lett. 88 192106

    [8]

    Chen X X, Teng L H, Liu X D, Huang Q W, Wen J H, Lin W Z, Lai T S 2008Acta Phys. Sin. 57 3853(in Chinese)[陈小雪, 滕利华, 刘晓东, 黄绮雯, 文锦辉, 林位株, 赖天树2008物理学报57 3853]

    [9]

    Wu Y, Jiao Z X, Lei L, Wen J H, Lai T S, Lin W Z 2006Acta Phys. Sin. 55 2961(in Chinese)[吴羽, 焦中兴, 雷亮, 文锦辉, 赖天树, 林位株2006物理学报55 2961]

    [10]

    Wu M W, Jiang J H, Weng M Q 2010Phys. Reports 493 61

    [11]

    Xia J B, Ge W K, Chang K 2008Semiconductor Spintronics (Beijing:Science Press) p216(in Chinese)[夏建白, 葛惟昆, 常凯2008半导体自旋电子学(北京:科学出版社)第216页]

    [12]

    Ohno Y, Terauchi R, Adachi T, Matsukura F, Ohno H 1999Phys. Rev. Lett. 83 4196

    [13]

    Eldridge P S, Lagoudakis P G, Henini M, Harley R T 2010Phys. Rev. B 81 033302

    [14]

    Vlkl R, Griesbeck M, Tarasenko S A, Schuh D, Wegscheider W, Schller C, Korn T 2011Phys. Rev. B 83 241306

    [15]

    Han L F, Zhu Y G, Zhang X H, Tian P H, Ni H Q, Niu Z C 2011Nanoscale Res. Lett. 6 84

    [16]

    Xu H H, Jiao Z X, Liu X D, Lei L, Wen J H, Wang H, Lin W Z, Lai T S 2006Acta Phys. Sin. 55 2618(in Chinese)[徐海红, 焦中兴, 刘晓东, 雷亮, 文锦辉, 王惠, 林位株, 赖天树2006物理学报55 2618]

    [17]

    Teng L H, Mu L J, Wang X 2014Physica B 436 177

    [18]

    Lai T S, Liu L N, Shou Q, Lei L, Lin W Z 2004Appl. Phys. Lett. 85 4040

    [19]

    Teng L H, Chen K, Wen J H, Lin W Z, Lai T S 2009J. Phys. D:Appl. Phys. 42 135111

    [20]

    Vlkl R, Schwemmer M, Griesbeck M, Tarasenko S A, Schuh D, Wegscheider W, Schller C, Korn T 2014Phys. Rev. B 89 075424

  • [1] 赵瑞通, 梁瑞生, 王发强. 电子自旋辅助实现光子偏振态的量子纠缠浓缩. 物理学报, 2017, 66(24): 240301. doi: 10.7498/aps.66.240301
    [2] 方少寅, 陆海铭, 赖天树. 自旋极化度对GaAs量子阱中吸收饱和效应与载流子复合动力学的影响研究. 物理学报, 2015, 64(15): 157201. doi: 10.7498/aps.64.157201
    [3] 杨双波. 温度与外磁场对Si均匀掺杂的GaAs量子阱电子态结构的影响. 物理学报, 2014, 63(5): 057301. doi: 10.7498/aps.63.057301
    [4] 李春雷, 徐燕, 张燕翔, 叶宝生. 双量子阱中光子辅助电子自旋隧穿. 物理学报, 2013, 62(10): 107301. doi: 10.7498/aps.62.107301
    [5] 杨双波. 掺杂浓度及掺杂层厚度对Si均匀掺杂的GaAs量子阱中电子态结构的影响. 物理学报, 2013, 62(15): 157301. doi: 10.7498/aps.62.157301
    [6] 蒋洪良, 张荣军, 周宏明, 姚端正, 熊贵光. InAs量子点中自旋-轨道相互作用下电子自旋弛豫的参量特征. 物理学报, 2011, 60(1): 017204. doi: 10.7498/aps.60.017204
    [7] 余华梁, 张秀敏, 滕利华, 文锦辉, 林位株, 赖天树. 本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究. 物理学报, 2009, 58(5): 3543-3547. doi: 10.7498/aps.58.3543
    [8] 陈小雪, 滕利华, 刘晓东, 黄绮雯, 文锦辉, 林位株, 赖天树. InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究. 物理学报, 2008, 57(6): 3853-3856. doi: 10.7498/aps.57.3853
    [9] 刘晓东, 王玮竹, 高瑞鑫, 赵建华, 文锦辉, 林位株, 赖天树. 室温下(Ga,Mn)As中载流子的自旋弛豫特性. 物理学报, 2008, 57(6): 3857-3861. doi: 10.7498/aps.57.3857
    [10] 吴 羽, 焦中兴, 雷 亮, 文锦辉, 赖天树, 林位株. 半导体量子阱中电子自旋弛豫和动量弛豫. 物理学报, 2006, 55(6): 2961-2965. doi: 10.7498/aps.55.2961
    [11] 赖天树, 刘鲁宁, 雷 亮, 寿 倩, 李熙莹, 王嘉辉, 林位株. 电子自旋偏振度及其弛豫过程的飞秒激光吸收光谱研究. 物理学报, 2005, 54(2): 967-971. doi: 10.7498/aps.54.967
    [12] 孙丰伟, 邓 莉, 寿 倩, 刘鲁宁, 文锦辉, 赖天树, 林位株. 量子阱中电子自旋注入及弛豫的飞秒光谱研究. 物理学报, 2004, 53(9): 3196-3199. doi: 10.7498/aps.53.3196
    [13] 李志锋, 陆 卫, 刘兴权, 沈学础, Y.FU, M.WILLANDER, H.H.TAN, C.JAGADISH. V形GaAs/AlGaAs量子线结构的微区光致发光谱研究. 物理学报, 2000, 49(9): 1809-1813. doi: 10.7498/aps.49.1809
    [14] 朱文章, 沈顗华. GaAs/AlGaAs多量子阱光生电压谱研究. 物理学报, 1996, 45(2): 258-264. doi: 10.7498/aps.45.258
    [15] 沈文忠, 唐文国, 沈学础, A.Dimoulas. δ掺杂的赝形高电子迁移率晶体管AlGaAs/InGaAs/GaAs结构的光谱研究. 物理学报, 1995, 44(5): 779-787. doi: 10.7498/aps.44.779
    [16] 程文芹, 蔡丽红, 陈弘, 周均铭, 谢小刚, 梅笑冰, 黄绮, 赵铁男, 朱恪. GaAs/AlGaAs量子线的制备和光致荧光谱. 物理学报, 1995, 44(1): 142-144. doi: 10.7498/aps.44.142
    [17] 池坚刚, 赵文琴, 李爱珍. MBE GaAs1-xSbx/GaAs应变层量子阱的光调制反射光谱. 物理学报, 1989, 38(10): 1710-1716. doi: 10.7498/aps.38.1710
    [18] 徐仲英, 李玉璋, 徐俊英, 许继宗, 郑宝真, 庄蔚华, 葛惟锟. GaAs-GaAlAs多量子阱结构中热载流子弛豫过程. 物理学报, 1987, 36(10): 1336-1343. doi: 10.7498/aps.36.1336
    [19] 潘少华, 厚美英. 自旋交换碰撞占主导时光泵硷金属原子的电子自旋弛豫. 物理学报, 1984, 33(8): 1177-1181. doi: 10.7498/aps.33.1177
    [20] 王国文. 晶体的单电子能级对称性与声子对称性的决定方法. 物理学报, 1966, 22(2): 197-204. doi: 10.7498/aps.22.197
计量
  • 文章访问数:  4782
  • PDF下载量:  106
  • 被引次数: 0
出版历程
  • 收稿日期:  2016-01-01
  • 修回日期:  2016-10-10
  • 刊出日期:  2017-02-05

/

返回文章
返回